Ziziphi iikhrayitheriya ze-SiC graphite epitaxial susceptors ezikumgangatho ophezulu ngo-2026?

Ii-susceptors ze-SiC graphite epitaxial ezikumgangatho ophezulu ngo-2026 zinobunyulu obuphezulu bezinto ezibonakalayo, uzinzo oluchanekileyo, ukuthembeka okuphezulu kokugquma, kunye nokusebenza kakuhle kobushushu. Ezi khrayitheriya zibalulekileyo ziqhuba iinkcukacha ezifunekayo ze-SiC epitaxy yesizukulwana esilandelayo. Eli shishini lilindele ukukhula okubonakalayo, kunye nomthamo we-200mm we-fab we-semiconductors yamandla kunye neemoto, kubandakanya nezixhobo zeSiC, onyuka nge34% phakathi kowama-2023 nowama-2026Olu lwando lubonisa imfuneko ebalulekileyo yokuqhubela phambiliumxhasi wegrafayithiubuchwepheshe bokuxhasa iimfuno zemveliso zexesha elizayo.

Izinto ezibalulekileyo ekufuneka ziqwalaselwe

• Ii-susceptors ezikumgangatho ophezulu zifuna i-graphite ecocekileyo kakhulu kunye ne-SiC coating egqibeleleyo. Oku kuthintela izinto ezimbi ukuba zingangeni kwiileya zeSiC.
• IUkwaleka kweSiCkufuneka iqine kwaye ilingane. Kufuneka inamathele kakuhle kwaye ingagugi lula. Oku kugcina inkqubo icocekile kwaye ihambelana.
• Ii-susceptors kufuneka zibe nobukhulu obuchanekileyo kunye nemo efanelekileyo. Kufuneka zihlale zithe tyaba nokuba zishushu kakhulu. Oku kunceda i-SiC ikhule ngokulinganayo.
• Ii-Susceptors kufuneka zisasaze ubushushu kakuhle kwaye zigcine ubushushu obuzinzileyo. Oku kuqinisekisa ukuba iileya zeSiC zikhula ngokuchanekileyo kwaye zisemgangathweni ophezulu.
• Abavelisi basebenzisa uhlolo olungqongqo ukuqinisekisa ukuba wonke umntu osebenzisa izixhobo ulungile. Bayavavanya ngononophelo kwaye balandelela yonke into. Oku kuqinisekisa ukuba basebenza ngokuthembekileyo.

Ukucoceka kwezinto kunye noBume be-2026 Epitaxial Susceptors

Umgangatho ophezuluIi-susceptors ze-SiC graphite epitaxialNgowama-2026 zifuna ubunyulu obugqwesileyo bezinto kunye nokwakheka okuchanekileyo. Ezi zinto zichaphazela ngokuthe ngqo ukusebenza kunye nokuthembeka kweenkqubo ze-SiC epitaxy. Abavelisi kufuneka bahlangabezane nemigangatho engqongqo yokuxhasa imveliso ye-semiconductor ephucukileyo.

Imigangatho yeGraphite Substrate ecocekileyo kakhulu

I-graphite substrate yakha isiseko se-epitaxial susceptors. Ubunyulu bayo buchaphazela ngokuthe ngqo umgangatho wee-SiC layers ezikhulileyo. Ngo-2026, imigangatho ifuna i-graphite enomxholo womlotha ophantsi kakhulu, oqhele ukuba ngaphantsi kwe-5 ppm. Abavelisi bakwaqinisekisa ukuba ubuninzi obudibeneyo kunye nolwakhiwo lwengqolowa entle buhlala bufana. Ezi mpawu zithintela ukuphuma kwegesi ngexesha lokucubungula ubushushu obuphezulu. Zikwagcina ukuthembeka koomatshini be-susceptor. Ukufezekisa ubunyulu obuphezulu obunjalo kubandakanya iindlela eziphambili zokucoca.

I-SiC Coating Stoichiometry kunye noMgangatho weCrystal

I-silicon carbide (SiC) coating ikhusela i-graphite substrate kwaye ibonelela ngomphezulu wokukhula. Ukusebenza kakuhle kufuna ukuchanekaUkwaleka kweSiCstoichiometry. Oku kuthetha ukuba umlinganiselo we-silicon-to-carbon kufuneka ube yi-1:1 ngqo. Nakuphi na ukuphambuka kunokungenisa iziphene kumaleko we-SiC epitaxial. Ngaphezu koko, umgangatho wekristale wengubo ye-SiC ubalulekile. Kufuneka ibonise isakhiwo sekristale esinamaphutha amancinci, njengokufaka iziphene okanye ukusasazeka. Ingubo esemgangathweni ophezulu iqinisekisa ukukhula okufanayo kwe-SiC kwaye ithintela ungcoliseko.

Imida yokuNgcola kwezinto ezilandelelanayo

Ungcoliseko lwezinto ezilandelelanayo lubeka umngcipheko omkhulu ekusebenzeni kwesixhobo seSiC. Nokuba zincinci kangakanani izinto ezingafunekiyo zingasebenza njengezinto ezibangela ukungcola okanye zenze iziphene ezingafunekiyo kwifilimu yeSiC. Ngowama-2026, abavelisi babeka imida ephantsi kakhulu yezinto ezilandelelanayo zesinyithi nezingezizo zesinyithi. Umzekelo, amanqanaba esinyithi, i-nickel, kunye ne-chromium kufuneka ahlale kuluhlu lweenxalenye ngebhiliyoni (ppb). Le mida ingqongqo ithintela ukuwohloka kokusebenza kombane kwizixhobo zokugqibela zeSiC. Iindlela zohlalutyo eziphambili ziqinisekisa la manqanaba ongcoliseko aphantsi kakhulu.

Ukunyaniseka Okuphambili Kokugquma Nokuqina Kwee-Epitaxial Susceptors

Ukuthembeka nokuqina kweIngubo ye-SiC kwi-graphite epitaxial susceptorszibaluleke kakhulu kwi-SiC epitaxy ehambelanayo nesemgangathweni ophezulu. Abavelisi bagxila kwiingubo eziqinileyo ezimelana neemeko ezinzima zokucubungula kwaye zigcina iimpawu zazo kwimijikelo emininzi.

Ubukhulu bokwaleka

Ubukhulu obufanayo bokugquma bubalulekile ekufezekiseni iiprofayili zobushushu ezihambelanayo kunye namazinga okukhula kuyo yonke i-wafer. Ii-epitaxial susceptors ezikumgangatho ophezulu zinobukhulu obahlukeneyo bokugquma.ngaphantsi kwe ±2%kuyo yonke indawo ye-wafer. Oku kuchanekileyo kuqinisekisa ukuba inxalenye nganye ye-wafer ifumana iimeko ezifanayo zokukhula. Ngaphezu koko, abavelisi balwela ukuba kubekho iziphene ezincinci. Ubuninzi beziphene akufuneki budlule kwi-0.1 yeziphene/cm² kumasuntswana amakhulu kune-0.3μm. Olu lawulo luqinileyo luthintela ukungapheleli kwiileya ze-SiC ezikhulayo.

Ukunamathela kunye nokumelana nokususwa kwe-delamination

Ukunamathelana okuqinileyo phakathi kwe-SiC coating kunye ne-graphite substrate kubalulekile ekusebenzeni ixesha elide. Ukunamathelana okungalunganga kunokukhokelela ekuqhekekeni, okungcolisa inkqubo kwaye konakalise i-wafer. Abavelisi basebenzisa iindlela ezahlukeneyo zokuvavanya ukunamathela. Balinganisa ukunamathela ngeukudala iindawo eziqhekekileyo kwiipleyiti zovavanyoLe ndlela itshabalalisayo ibonisa ukungabikho kokunamathelana ngokuqhekeka kwengubo kwindawo eqhekekileyo. Ukongeza, bavavanya ukunamathelana ngoukusebenzisa uxinzelelo loomatshini kumphezulu ogqunyiweyoukujonga ukuba akukho ukuxobuka okanye ukuqhekeka. Uvavanyo lokuqina lulinganisa iimeko zehlabathi lokwenyani. Olu vavanyo luvavanya ukumelana nokuguguleka, uxinzelelo lobushushu, kunye nokuvezwa ngamakhemikhali. Uvavanyo lozinzo lobushushu lufuna ukuba iinkuni zigcine ukuqina kwesakhiwo ngokujikeleza kobushushu ukusuka kwi--65°C ukuya kwi-600°C ngaphandle kokuqhekeka okanye ukuqhekeka.

Uburhabaxa bomphezulu kunye neMofology

Uburhabaxa bomphezulu kunye nokwakheka komphezulu we-SiC coating buchaphazela ngokuthe ngqo umgangatho womaleko we-epitaxial. Umphezulu ogudileyo, ongenaziphene ukhuthaza i-nucleation efanayo kunye nokukhula kweefilimu ze-SiC. Abavelisi bajolise ekubeni uburhabaxa bomphezulu bube sezantsi kakhulu, ngokuqhelekileyo kuluhlu lwe-nanometer. Baqinisekisa nokuba ukugquma kubonisa ukuma okufana kwe-crystalline. Oku kuthintela ukwakheka kwe-crystal orientation engafunekiyo okanye iziphene kwizinto ze-SiC ezikhulileyo. Umphezulu olawulwa kakuhle unciphisa ukuveliswa kwamasuntswana kwaye wonyusa isivuno senkqubo ye-epitaxy.

Ukumelana nokuKhukuliseka kunye nokuGqwala

Iingubo zeSiC ezisemgangathweni ophezulu kufuneka zibonakalise ukumelana okugqwesileyo nokukhukuliseka kunye nokugqwala. Olu buchule luqinisekisa ukuba i-susceptor ihlala ixesha elide kwaye igcina inkqubo icocekile. Iindawo ezinobungozi zeekhemikhali kunye namaqondo obushushu aphezulu e-SiC epitaxy zifuna ukhuseleko oluqinileyo.

Izifundo ziqinisekisa ukumelana okuphezulu kokugqwala kweengubo ze-CVD SiC. Ezi ngubo zikhusela ngempumelelo ii-susceptors ze-graphite kwiiarhente ezigqwalisayo ezifanai-ammonia (NH3) kunye ne-chlorine (Cl2) kumaqondo obushushu aphezuluOlu khuselo luvumela i-susceptor ukuba igcine ukuthembeka kwayo kuyo yonke inkqubo yokukhula kwe-epitaxial. Ukuqina okunjalo kuthintela ukuwohloka kwezinto kunye nongcoliseko lwee-SiC layers ezikhulayo.

Abavelisi bavavanya ngokungqongqo ukuqina kwengubo. Bavavanya amazinga okulahleka kobunzima kunye notshintsho kuburhabaxa bomphezulu emva kokuchatshazelwa ziimeko ezirhabaxa. Umzekelo, ezinye iisampulu zengubo zeSiC zibonisaamazinga okulahleka kobunzima aphantsi njenge-0.72% kwaye uburhabaxa bomphezulu butshintsha malunga ne-11.3%Ezinye iinguqulelo zokugquma zinokubonisa amazinga aphezulu okulahleka kobunzima, afikelela kwi-1.2%, okanye utshintsho olukhulu ngakumbi loburhabaxa bomphezulu, oludlula i-50%. Ezi metriki zinceda iinjineli ukuba ziphucule iindlela zokugquma ukuze zikwazi ukumelana nobunzima obukhulu.

Iingubo zeSiC ziyaziwa ngokumelana kwazo nokugqwala okugqwesileyokwiindawo ezinobungozi kakhulu, kuquka ii-asidi ezinamandla kunye nee-alkali. Zikhusela ngempumelelo i-substrate ekukhukulisekeni kweekhemikhali kwaye zigcina ukusebenza okuzinzileyo naphantsi kweemeko ezinzima, zinegalelo ekusebenzeni ngcono kwecandelo kunye nobomi benkonzo ende.

Oku kungangeni kakuhle kweekhemikhali zeSiC kuqinisekisa ukuba i-susceptor ihlala izinzile. Ithintela iimpembelelo zeekhemikhali ezinokuzisa ukungcola okanye zitshintshe umphezulu we-susceptor. Ekugqibeleni, ukukhukuliseka okuphezulu kunye nokumelana nokugqwala kunegalelo ngokuthe ngqo kumgangatho we-wafer ohambelanayo kunye nobomi obude bokusebenza kwe-susceptor.

Ukuchaneka koBume kunye nokuzinza koomatshini kwee-Epitaxial Susceptors

Umgangatho ophezuluIi-susceptors ze-SiC graphite epitaxialNgowama-2026 zifuna ukuchaneka okumangalisayo kunye nokuzinza okuqinileyo koomatshini. Ezi mpawu zichaphazela ngokuthe ngqo ukufana kunye nokuthembeka kwenkqubo ye-SiC epitaxy. Abavelisi bagxila kwezi ndawo ukuze bahlangabezane neemfuno ezingqongqo zokwenza i-semiconductor ephucukileyo.

Ukunyamezelana Okuqinileyo

Ubukhulu obuchanekileyo bubalulekile ekusebenzeni kakuhle kwe-susceptor. Abavelisi baqinisekisa ukunyamezelana okuqinileyo kakhulu kwiiparameter ezifana nobubanzi, ubukhulu, kunye nokuthamba. Umzekelo, ukuthamba kumphezulu we-susceptor kufuneka kuhlale ngaphakathi kwee-micrometer ezimbalwa. Olu lawulo luqinileyo luqinisekisa ukufudumeza okufanayo kunye nokuhamba kwegesi rhoqo kwi-wafer yonke. Nakuphi na ukuphambuka kwimilinganiselo kunokukhokelela ekusasazweni kobushushu obungalinganiyo. Oku kuphumela ekukhuleni komgangatho we-SiC okungaguqukiyo kunye nokuncipha kwemveliso yesixhobo. Iindlela eziphambili zoomatshini kunye nokulinganisa zifezekisa le migangatho inzima.

Ukuthelekiswa kokwandiswa kobushushu

I-coefficient yokwandisa ubushushu ye-SiC coating kufuneka ifane kakhulu ne-graphite substrate. Olu lungelelwaniso lubalulekileyo luthintela ukwakheka koxinzelelo ngexesha lomjikelo wokufudumeza nokupholisa ngokukhawuleza. Ukuba ii-coefficients zahlukile kakhulu, uxinzelelo lobushushu lunokubangela ukuba i-SiC coating iqhekeke okanye ihlukane ne-graphite. Ezi ziphene zibeka emngciphekweni ukuthembeka kwe-susceptor kwaye zingcolise inkqubo ye-epitaxial. Iinjineli zikhetha ngononophelo izixhobo kwaye ziphucule iinkqubo zokugquma ukuze zifezekise olu kuhambelana nokwanda kobushushu okubalulekileyo. Oku kuqinisekisa ukuqina kwexesha elide kwe-epitaxial susceptors.

Ukumelana ne-Warpage kunye ne-Deformation

Ii-Epitaxial susceptors kufuneka zigcine imo yazo echanekileyo nokuba ziphantsi kobushushu obuphezulu bokusebenza, obuhlala budlula i-1600°C. Ngoko ke, ukumelana ne-warpage kunye nokuguqulwa kwayo kubalulekile. I-Warpage inokukhokelela ekufudumaleni kwe-wafer okungalinganiyo, ukutyibilika kwe-wafer, kunye nokufana kwefilimu okungekho semgangathweni. Abavelisi basebenzisa amanqanaba aphezulu e-graphite, i-isotropic graphite kunye neendlela eziphambili zokugquma ze-SiC ukuphucula ukuqina kwesakhiwo. Ezi zinto kunye neenkqubo zinciphisa uxinzelelo lwangaphakathi kwaye zithintele utshintsho lwesimo ngexesha lokuvezwa kobushushu obuphezulu ixesha elide. Oku kuqinisekisa iimeko zenkqubo ezihambelanayo kunye neengqimba ze-SiC epitaxial ezikumgangatho ophezulu.

Ukusebenza kakuhle kwe-Thermal ye-Epitaxial Susceptors

Umgangatho ophezuluIi-susceptors ze-SiC graphite epitaxialNgowama-2026 kufuneka ibonise ukusebenza kakuhle kobushushu. Oku kuqinisekisa i-SiC epitaxy ehambelanayo nesebenzayo. Abavelisi babeka phambili iipropati eziququzelela ulawulo oluchanekileyo lobushushu kunye nozinzo ngexesha lenkqubo yokukhula.

Ukuqhuba Ubushushu kunye Nokulingana

Ukuqhuba kakuhle kobushushu kubalulekile ekudluliseleni ubushushu ngokufanelekileyo ngaphakathi kwe-susceptor. Le propati ivumela imijikelo yokufudumeza nokupholisa ngokukhawuleza. Ikwanceda ukugcina ubushushu obuzinzileyo kwi-wafer. I-CVD 3C–SiC, into eqhelekileyo kwi-wafer susceptors ekukhuleni kwe-semiconductor, ibonisa ukuqhuba okuphezulu kobushushu. Izifundo kwi-CVD 3C–SiC esekwe kwi-<111> zibonisa ukuba ukuqhuba kwayo kobushushu ngaphandle kweplane kunokuncipha ukusuka kwi146.4 W/m·K ukuya kwi-122.3 W/m·Knjengoko ubungakanani bengqolowa busondela kwi-11.04 μm. Enye i-β-SiC coating, eyenziwe nge-CVD, ibonisa ukuhanjiswa kobushushu3.2 W/m·KLe nto igcina ubume bayo buthe tyaba obuyi-±0.2mm nokuba ikwi-1600 °C, nto leyo ebonisa uzinzo lwayo kumaqondo obushushu aphezulu e-epitaxy. Ubushushu obuphezulu buthintela iindawo ezishushu kunye neendawo ezibandayo, nto leyo enokubangela ukukhula kwefilimu engalinganiyo.

Ubushushu obufanayo kwi-Susceptor

Ukufikelela nokugcina ubushushu obufanayo kuwo wonke umphezulu we-susceptor kubaluleke kakhulu. Ubushushu obungalinganiyo bubangela umahluko kumazinga okukhula kunye neempawu zezinto ezibonakalayo kwi-SiC wafer. Abavelisi bayila ii-susceptors ezinejometri ezithile kunye nokusasazwa kwezinto ukuze kukhuthazwe ukusasazwa kobushushu ngokulinganayo. Izixhobo zokulinganisa ubushushu eziphambili kunye nezixhobo zokulinganisa zinceda ukuphucula olu yilo. Oku kuqinisekisa ukuba yonke inxalenye ye-wafer ifumana imeko-bume efanayo yobushushu. Ukufana kobushushu obuhambelanayo kuthetha ngokuthe ngqo kwimveliso ephezulu ye-wafer kunye nokusebenza okuphuculweyo kwesixhobo.

Uzinzo lokukhupha umoya

Ukukhupha umoya, amandla omphezulu okukhupha amandla obushushu, adlala indima ebalulekileyo kulawulo lobushushu. Ukuqina kobushushu okuzinzileyo kuqinisekisa ukulinganiswa kobushushu ngokuchanekileyo ngee-pyrometers. Kukwanceda ekudluliseleni kobushushu rhoqo ngaphakathi kwi-reactor. Iingubo ze-SiC zihlala zibonisa ukuqina okuphezulu.

Ii-susceptors ezikumgangatho ophezulu zigcina amaxabiso azinzileyo okuphuma kwegesi kwimijikelo emininzi ye-epitaxy. Oku kuthintela ukutyibilika kokufundwa kobushushu kwaye kuqinisekisa iimeko zenkqubo eziphindaphindwayo. Ukonakala kwengubo okanye utshintsho lomphezulu kunokutshintsha ukuphuma kwegesi, okukhokelela ekungahambelani kwenkqubo. Ke ngoko, abavelisi bagxila kwiingubo ezihlala ixesha elide ezigcina iimpawu zazo zokukhanya kulo lonke ixesha lokusebenza kwabo.

Ulawulo lweMveliso kunye noQinisekiso loMgangatho kwi-Epitaxial Susceptors

Abavelisi basebenzisa amanyathelo olawulo oluqinileyo kunye nokuqinisekisa umgangatho ukuze bafumane umgangatho ophezuluIi-susceptors ze-SiC graphite epitaxialEzi ndlela ziqinisekisa ukuthembeka kwemveliso kunye nokusebenza kwayo rhoqo. Ziyahlangabezana neemfuno ezifunekayo zokwenza izinto ze-semiconductor eziphambili.

Ukuphinda-phinda kunye nokungaguquguquki kweBatch-to-Batch

Ukuphinda-phinda kubalulekile ekwenzeni ii-susceptors ezikumgangatho ophezulu. Abavelisi bamisela ulawulo oluqinileyo lwenkqubo. Ezi lawulo ziqinisekisa iipropati zezinto ezihambelanayo kunye nokusebenza kuzo zonke iibhetshi zemveliso. Basebenzisa ulawulo lwenkqubo yezibalo (i-SPC) ukujonga iiparameter eziphambili. Oku kubandakanya ukwakheka kwezinto, ubukhulu bengubo, kunye nokunyamezelana kobukhulu. Ukufunyanwa kwezinto eziluhlaza rhoqo kukwadlala indima ebalulekileyo. Kunciphisa umahluko kwimveliso yokugqibela. Le ndlela ichanekileyo iqinisekisa ukuba zonke ii-susceptors zisebenza kumgangatho ofanayo ophezulu.

IiProtokholi zoVavanyo olungonakalisiyo

Iiprotokholi zovavanyo olungonakalisiyo (NDT) ziqinisekisa umgangatho we-susceptor ngaphandle kokubangela umonakalo. Ukuhlolwa okubonakalayo kuchonga iziphene okanye ukungalungi komphezulu. Uvavanyo lwangoku lwe-Eddy luchonga iziphene ezingaphantsi komhlaba kunye nemiba yokuthembeka kwengubo. Uvavanyo lwe-Ultrasonic lunokubonisa izithuba zangaphakathi okanye ukuqhekeka. Uhlolo lwe-X-ray lubonelela ngohlalutyo oluneenkcukacha lwesakhiwo sangaphakathi. Olu vavanyo luqinisekisa ukuba i-susceptors ihlangabezana neemfuno zomgangatho ezingqongqo. Zithintela iimveliso ezineziphene ukuba zingangeni kwikhonkco lokubonelela. Le ndlela yokubonelela igcina ukuthembeka okuphezulu kwemveliso.

Isiqinisekiso kunye nokulandelelwa

Isiqinisekiso kunye nokulandelelwa kubonelela ngoqinisekiso lomgangatho olubalulekileyo. Abavelisi balandela imigangatho yamazwe ngamazwe efana ne-ISO 9001. Oku kubonisa ukuzinikela kwiinkqubo zolawulo lomgangatho. Umxumi ngamnye ufumana isihlonzi esahlukileyo. Oku kuvumela ukulandelelwa okupheleleyo ukusuka kwizinto eziluhlaza ukuya kwimveliso yokugqibela. Irekhoda iinkcukacha zeenkqubo zokwenziwa, iziphumo zokuhlolwa, kunye nemvelaphi yezinto ezibonakalayo. Olu xwebhu lupheleleyo luqinisekisa uxanduva. Lukwanceda ekusombululeni iingxaki ngokukhawuleza ukuba kuvela iingxaki. Isiqinisekiso kunye nokulandelelwa kwakha ukuzithemba kumgangatho kunye nokusebenza kwemveliso.

Ii-susceptors ze-SiC graphite epitaxial ezikumgangatho ophezulu ngo-2026 ziya kuhlangabezana nemigangatho engqongqo yokucoceka kwezinto, ukuthembeka kokugquma, ukuchaneka kobukhulu, kunye nokusebenza kobushushu. Olu phuculo lwenza ukuba i-SiC power electronics kunye nezinye izicelo ezibalulekileyo ziqhubekeke.Iindlela eziphambili zokugquma zeSiCyonyusa ukumelana namaqondo obushushu aphezulu kunye neempendulo zeekhemikhali ngexesha le-MOCVD, iphucula ukusebenza kakuhle kwemveliso kunye nokuqina kwayo. Uyilo lwe-susceptor olulungisiweyo luqinisekisa ukusasazwa kobushushu obufanayo, luphucula ngokuthe ngqo umgangatho wefilimu ye-semiconductor. Oku kukhokelela ekusebenzeni ngcono kunye nemveliso ephezulu yezixhobo ze-semiconductor.Ukuphuculwa kwamandla oomatshini kunye nokuqhuba kobushushuikwanegalelo ekusebenzeni ixesha elide kwaye inciphise ungcoliseko.

FAQ

Yintoni i-SiC graphite epitaxial susceptor?

Yinto ebalulekileyo kwi-SiC epitaxy. Ibamba i-wafer ngexesha leenkqubo zokukhula kobushushu obuphezulu. Ine-substrate ye-graphite ene-SiC coating ekhuselayo. Olu yilo luqinisekisa ukufudumeza okufanayo kwaye luthintela ungcoliseko.

Kutheni ubunyulu bezinto eziphathekayo bubalulekile kwaba baxhaphazi?

Ubumsulwa obuphezulu bezinto buthintela ungcoliseko lwe-SiC epitaxial layer. Izinto ezilandelelanayo zinokusebenza njengezinto ezingafunekiyo. Zidala iziphene kwizinto ze-semiconductor. I-graphite yobumsulwa obuphezulu kakhulu kunye ne-stoichiometry echanekileyo ye-SiC coating zibalulekile.

Ukuthembeka kwengubo kuyichaphazela njani ukusebenza kwe-susceptor?

Ukuqina kokugquma kuqinisekisa ukuqina kunye neemeko zenkqubo ezihambelanayo. Ubukhulu obufanayo, ukunamathelana okuqinileyo, kunye noburhabaxa bomphezulu obuphantsi kuthintela iziphene. Ikwamelana nokukhukuliseka kunye nokubola. Oku kugcina umsebenzi wokukhusela we-susceptor ngokuhamba kwexesha.

Idlala yiphi indima ukusebenza kobushushu kumgangatho we-susceptor?

Ukusebenza kakuhle kobushushu kuqinisekisa ukusasazwa kobushushu obufanayo kwi-wafer. Ukuqhuba okuphezulu kobushushu kunye nokukhupha okuzinzileyo kubalulekile. Oku kukhokelela kumazinga okukhula kwe-SiC ahambelanayo. Kukwaphucula umgangatho wee-epitaxial layers.

Abavelisi baqinisekisa njani umgangatho wee-susceptors ze-epitaxial?

Abavelisi basebenzisa ulawulo olungqongqo lweenkqubo kunye nokuqinisekiswa komgangatho. Basebenzisa iinkqubo zovavanyo ezingonakalisiyo. Bakwagcina isiqinisekiso esipheleleyo kunye nokulandeleka. La manyathelo aqinisekisa ukuphinda kuvele kunye nokusebenza okuphezulu rhoqo kumntu ngamnye othintelayo.