Yiziphi izindlela zokusebenzisa ama-susceptor epitaxial epitaxial esezingeni eliphezulu e-SiC graphite ngo-2026?

Ama-susceptor epitaxial epitaxial e-SiC graphite asezingeni eliphezulu ngo-2026 anobumsulwa obuphezulu bezinto ezibonakalayo, ukuzinza okunembile kobukhulu, ubuqotho bokumboza obuthuthukisiwe, kanye nokusebenza kahle kokushisa. Lezi zindlela ezibalulekile ziqhuba imininingwane edingekayo ye-epitaxy yesizukulwane esilandelayo ye-SiC. Imboni ilindele ukukhula okukhulu, ngomthamo we-200mm we-fab wamandla kanye nama-semiconductor ezimoto, kufaka phakathi amadivayisi e-SiC, okwanda ngo-2026.34% phakathi kuka-2023 no-2026Lokhu kwanda kugcizelela isidingo esibalulekile sentuthukoumsusi we-graphiteubuchwepheshe bokusekela izidingo zokukhiqiza zesikhathi esizayo.

Izinto Ezibalulekile Okufanele Uzicabangele

• Ama-susceptor asezingeni eliphezulu adinga i-graphite emsulwa kakhulu kanye ne-SiC coating ephelele. Lokhu kuvimbela izinto ezimbi ukuthi zingangeni ezingqimbeni ze-SiC.
• IUkugqoka kwe-SiCkumele iqine futhi ilingane. Kudingeka inamathele kahle futhi ingagugi kalula. Lokhu kugcina inqubo ihlanzekile futhi ihambisana.
• Ama-susceptor kumele abe nosayizi nesimo esifanele. Kudingeka ahlale ethe tyaba ngisho noma kushisa kakhulu. Lokhu kusiza i-SiC ukuthi ikhule ngokulinganayo.
• Ama-susceptor kumele asakaze ukushisa kahle futhi agcine izinga lokushisa lizinzile. Lokhu kuqinisekisa ukuthi izendlalelo ze-SiC zikhula kahle futhi zisezingeni eliphezulu.
• Abakhiqizi basebenzisa ukuhlola okuqinile ukuqinisekisa ukuthi wonke umuntu osebenzisa i-injini ulungile. Bayawahlola ngokucophelela futhi balandelele konke. Lokhu kuqinisekisa ukuthi asebenza ngokwethembeka.

Ukuhlanzeka Kwezinto Nokwakheka Kwama-Susceptors Epitaxial ka-2026

Ikhwalithi ephezuluAma-susceptors e-SiC graphite epitaxialngo-2026 zidinga ubumsulwa bezinto ezibonakalayo obukhethekile kanye nokwakheka okunembile. Lezi zici zithinta ngqo ukusebenza kanye nokuthembeka kwezinqubo ze-SiC epitaxy. Abakhiqizi kumele bahlangabezane nezindinganiso eziqinile zokusekela ukukhiqizwa kwe-semiconductor okuthuthukisiwe.

Amazinga e-Ultra-High Purity Graphite Substrate

I-substrate ye-graphite yakha isisekelo se-epitaxial susceptors. Ukuhlanzeka kwayo kuthinta ngqo ikhwalithi yezingqimba ze-SiC ezikhulile. Ngo-2026, amazinga adinga i-graphite enokuqukethwe komlotha okuphansi kakhulu, ngokuvamile ngaphansi kwe-5 ppm. Abakhiqizi baqinisekisa futhi ubuningi obuhambisanayo kanye nesakhiwo sezinhlamvu ezincane. Lezi zakhiwo zivimbela ukuphuma kwegesi ngesikhathi sokucubungula izinga lokushisa eliphezulu. Ziphinde zigcine ubuqotho bomshini we-susceptor. Ukufeza ukuhlanzeka okunjalo okuphezulu kuhilela amasu okuhlanza athuthukile.

I-SiC Coating Stoichiometry kanye nekhwalithi yekristalu

Isembozo se-silicon carbide (SiC) sivikela i-graphite substrate futhi sihlinzeka ngomphezulu wokukhula. Ukusebenza kahle kudinga ukucacaUkugqoka kwe-SiCi-stoichiometry. Lokhu kusho ukuthi isilinganiso se-silicon-to-carbon kumele sibe yi-1:1 ngqo. Noma yikuphi ukuphambuka kungaletha amaphutha kungqimba lwe-SiC epitaxial. Ngaphezu kwalokho, ikhwalithi yekristalu yengubo ye-SiC ibalulekile. Kumelwe ibonise isakhiwo sekristalu kakhulu esinamaphutha amancane, njengamaphutha okuhlanganisa noma ukuhlukana. Ingubo yekhwalithi ephezulu iqinisekisa ukukhula okufanayo kwe-SiC futhi ivimbela ukungcola.

Imikhawulo Yokungcoliswa Kwezinto Ezilandelelanayo

Ukungcola kwe-trace element kubeka usongo olukhulu ekusebenzeni kwedivayisi ye-SiC. Ngisho nenani elincane lokungcola lingasebenza njengezinto ezifaka izinto noma lidale amaphutha angafuneki kwifilimu ye-SiC. Ngo-2026, abakhiqizi babeka imikhawulo ephansi kakhulu yezakhi zokulandelela zensimbi nezingezona ezensimbi. Isibonelo, amazinga ensimbi, i-nickel, ne-chromium kumele ahlale ebangeni lezingxenye ngezigidigidi (ppb). Le mikhawulo eqinile ivimbela ukuwohloka kokusebenza kukagesi kumadivayisi okugcina e-SiC. Izindlela zokuhlaziya ezithuthukisiwe ziqinisekisa la mazinga okungcola aphansi kakhulu.

Ubuqotho Bokumboza Okuthuthukisiwe Nokuqina Kwezimbozo Ze-Epitaxial

Ubuqotho nokuqina kweUkugqoka kwe-SiC kuma-susceptors e-graphite epitaxialzibaluleke kakhulu e-SiC epitaxy eqhubekayo nesezingeni eliphezulu. Abakhiqizi bagxila ekumbozweni okuqinile okumelana nezimo zokucubungula ezinzima futhi balondoloze izakhiwo zabo emijikelezweni eminingi.

Ukujiya Kokumboza Ukufana

Ubukhulu bengubo obufanayo bubalulekile ekufinyeleleni amaphrofayili okushisa ahambisanayo kanye namazinga okukhula kuyo yonke i-wafer. Ama-susceptor e-epitaxial asezingeni eliphezulu anokwehluka kobukhulu bengubo.ngaphansi kuka-±2%kulo lonke ubuso be-wafer. Lokhu kunemba kuqinisekisa ukuthi ingxenye ngayinye ye-wafer ihlangabezana nezimo zokukhula ezifanayo. Ngaphezu kwalokho, abakhiqizi balwela ukuthola amaphutha amancane. Ubuningi bamaphutha akufanele budlule amaphutha angu-0.1/cm² ezinhlayiyeni ezinkulu kuno-0.3μm. Lokhu kulawula okuqinile kuvimbela amaphutha ukuthi angadluleli ezingqimbeni ze-SiC ezikhulayo.

Ukumelana Nokunamathela Nokuqhekeka

Ukunamathelana okuqinile phakathi kwe-SiC coating kanye ne-graphite substrate kubalulekile ekusebenzeni kwesikhathi eside. Ukunamathelana okungekuhle kungaholela ekuhlukaniseni, okungcolisa inqubo futhi kulimaze i-wafer. Abakhiqizi basebenzisa izindlela ezahlukene ukuhlola ukunamathela. Balinganisa ukunamathela ngeukudala izindawo zokuqhekeka kusuka kumapuleti okuhlolaLe ndlela ebhubhisayo yembula ukuntuleka kokunamathela ngokuqhekeka kwengubo endaweni yokuqhekeka. Ngaphezu kwalokho, bahlola ukunamathela ngeukusebenzisa ukucindezeleka komshini endaweni eboshiweukuhlola ukuxebuka noma ukuhlukanisa. Ukuhlolwa kokuqina kulingisa izimo zangempela. Lokhu kuhlolwa kuhlola ukumelana nokuguguleka, ukucindezeleka kokushisa, kanye nokuchayeka kumakhemikhali. Ukuhlolwa kokuqina kokushisa kudinga ukumbozwa ukuze kugcinwe ubuqotho besakhiwo ngokujikeleza kokushisa kusuka ku--65°C kuya ku-600°C ngaphandle kokuhlukanisa noma ukuqhekeka.

Ubulukhuni Bomphezulu kanye Nokwakheka Kwawo

Ubulukhuni bomphezulu kanye nesimo se-SiC coating kuthinta ngqo ikhwalithi yesendlalelo se-epitaxial. Indawo ebushelelezi, engenamaphutha ikhuthaza i-nucleation efanayo kanye nokukhula kwamafilimu e-SiC. Abakhiqizi bahlose ukuba nobulukhuni bomphezulu obuphansi kakhulu, ngokuvamile ebangeni le-nanometer. Baqinisekisa nokuthi ingubo ibonisa isimo se-crystalline esifanayo. Lokhu kuvimbela ukwakheka kwe-crystal orientation engafuneki noma amaphutha ezintweni ze-SiC ezikhulile. Indawo elawulwa kahle inciphisa ukukhiqizwa kwezinhlayiya futhi ithuthukise isivuno senqubo ye-epitaxy.

Ukuguguleka Nokumelana Nokugqwala

Izembozo ze-SiC ezisezingeni eliphezulu kumele zibonise ukumelana okungavamile nokuguguleka nokugqwala. Leli khono liqinisekisa ukuthi i-susceptor ihlala isikhathi eside futhi ligcina ukuhlanzeka kwenqubo. Izindawo zamakhemikhali ezinzima kanye namazinga okushisa aphezulu e-SiC epitaxy zidinga ukuvikelwa okuqinile.

Izifundo ziqinisekisa ukumelana okuphezulu kokugqwala kwezimbozo ze-CVD SiC. Lezi zimbozo zivikela ngempumelelo ama-graphite susceptors kuma-ejenti agqwalisayo afanai-ammonia (NH3) kanye ne-chlorine (Cl2) emazingeni okushisa aphezuluLokhu kuvikelwa kuvumela i-susceptor ukuthi igcine ubuqotho bayo kuyo yonke inqubo yokukhula kwe-epitaxial. Ukuqina okunjalo kuvimbela ukuwohloka kwezinto kanye nokungcola kwezingqimba ze-SiC ezikhulayo.

Abakhiqizi bahlola ngokuqinile ukuqina kwesembozo. Bahlola amazinga okulahlekelwa yisisindo kanye nezinguquko ekuqineni kobuso ngemva kokuchayeka ezimweni ezinolaka. Isibonelo, amanye amasampula esembozo se-SiC abonisaamazinga okulahlekelwa isisindo aphansi njengo-0.72% kanye nokushintsha kobulukhuni bomphezulu cishe ngo-11.3%. Ezinye izinguquko zokumboza zingase zibonise amazinga aphezulu okulahlekelwa isisindo, afinyelele ku-1.2%, noma izinguquko ezinkulu zokungaguquguquki kobuso, ezidlula u-50%. Lezi zilinganiso zisiza onjiniyela ukuthi bathuthukise ukwakheka kokumboza ukuze bamelane kakhulu.

Izembozo ze-SiC ziyaziwa ngokumelana kwazo nokugqwala okumangalisayoezindaweni ezigqwala kakhulu, okuhlanganisa ama-asidi aqinile nama-alkali. Zivikela ngempumelelo i-substrate ekugugulekeni kwamakhemikhali futhi zigcina ukusebenza okuzinzile ngisho nangaphansi kwezimo ezinzima, zinegalelo ekusebenzeni kahle kwezingxenye kanye nokuphila isikhathi eside kwenkonzo.

Lokhu kungasebenzi kahle kwamakhemikhali kwe-SiC kuqinisekisa ukuthi i-susceptor ihlala izinzile. Kuvimbela ukusabela kwamakhemikhali okungaletha ukungcola noma kushintshe ubuso be-susceptor. Ekugcineni, ukuguguleka okuphezulu kanye nokumelana nokugqwala kunikela ngqo kwikhwalithi ye-wafer eqhubekayo kanye nokuphila isikhathi eside kokusebenza kwe-susceptor.

Ukunemba Okulinganiselwe kanye Nokuzinza Kwemishini Kwe-Epitaxial Susceptors

Ikhwalithi ephezuluAma-susceptors e-SiC graphite epitaxialngo-2026 zidinga ukunemba okumangalisayo kobukhulu kanye nokuqina okuqinile kwemishini. Lezi zimfanelo zithinta ngqo ukufana kanye nokuthembeka kwenqubo ye-SiC epitaxy. Abakhiqizi bagxila kulezi zindawo ukuze bahlangabezane nezidingo eziqinile zokwenziwa kwe-semiconductor okuthuthukisiwe.

Ukubekezelelana Okuqinile Kobukhulu

Ubukhulu obuqondile buyisisekelo sokusebenza kahle kwe-susceptor. Abakhiqizi baqinisekisa ukubekezelelana okuqinile kakhulu kwamapharamitha afana nobubanzi, ukujiya, kanye nokuba yisicaba. Isibonelo, ukuba yisicaba ebusweni be-susceptor kumele kuhlale ngaphakathi kwama-micrometer ambalwa. Lokhu kulawula okuqinile kuqinisekisa ukushisa okufanayo kanye nokugeleza kwegesi okuhambisanayo kulo lonke i-wafer. Noma yikuphi ukuphambuka kobukhulu kungaholela ekusatshalalisweni kokushisa okungafani. Lokhu kuphumela ekukhuleni kwesendlalelo se-SiC okungaguquki kanye nokwehla kwesivuno sedivayisi. Amasu okusebenza okuthuthukisiwe kanye nokulinganisa afinyelela la mazinga aqinile.

Ukuqhathaniswa Kokunwetshwa Kokushisa

I-coefficient yokwandisa ukushisa kwe-SiC coating kumele ifane kakhulu neye-graphite substrate. Lokhu kulungiswa okubalulekile kuvimbela ukwakheka kokucindezeleka ngesikhathi sokushisa okusheshayo kanye nemijikelezo yokupholisa. Uma ama-coefficients ehluka kakhulu, ukucindezeleka kokushisa kungabangela ukuthi i-SiC coating iqhekeke noma ihlukane ne-graphite. Amaphutha anjalo aphazamisa ubuqotho be-susceptor futhi angcolise inqubo ye-epitaxial. Onjiniyela bakhetha ngokucophelela izinto zokwakha futhi bathuthukise izinqubo zokugqoka ukuze bafeze lokhu kuhambisana okubalulekile kokukhulisa ukushisa. Lokhu kuqinisekisa ukuqina kwesikhathi eside kwama-susceptors epitaxial.

Ukumelana Nokulwa Nokuguquka Kwesimo

Ama-susceptor e-Epitaxial kumele agcine isimo sawo esinembile ngisho nangaphansi kwamazinga okushisa aphezulu okusebenza, avame ukwedlula u-1600°C. Ngakho-ke ukumelana ne-warpage kanye nokuguqulwa kubalulekile. I-Warpage ingaholela ekufudumaleni kwe-wafer okungalingani, ukushelela kwe-wafer, kanye nokufana okungekuhle kwefilimu. Abakhiqizi basebenzisa amazinga aphezulu e-graphite, ama-isotropic graphite kanye namasu okumboza e-SiC athuthukisiwe ukuze kuthuthukiswe ukuqina kwesakhiwo. Lezi zinto nezinqubo zinciphisa ukucindezeleka kwangaphakathi futhi zivimbele izinguquko zesimo ngesikhathi sokuvezwa isikhathi eside kokushisa okuphezulu. Lokhu kuqinisekisa izimo zenqubo ezihambisanayo kanye nezendlalelo ze-SiC epitaxial ezisezingeni eliphezulu.

Ukusebenza Okuthuthukisiwe Kokushisa Kwe-Epitaxial Susceptors

Ikhwalithi ephezuluAma-susceptors e-SiC graphite epitaxialngo-2026 kumele kubonise ukusebenza kahle kokushisa. Lokhu kuqinisekisa i-SiC epitaxy eqhubekayo nephumelelayo. Abakhiqizi babeka phambili izakhiwo ezisiza ukulawula izinga lokushisa okunembile kanye nokuqina ngesikhathi senqubo yokukhula.

Ukushisa Okushisayo Nokulingana

Ukuqhuba kahle kokushisa kubalulekile ekudluliseni ukushisa okuphumelelayo ngaphakathi kwe-susceptor. Lesi sici sivumela imijikelezo yokushisa okusheshayo nokupholisa. Siphinde sisize ukugcina izinga lokushisa elizinzile kulo lonke i-wafer. I-CVD 3C–SiC, into evamile yama-susceptor e-wafer ekukhuleni kwe-semiconductor, ikhombisa ukuqhuba okuphezulu kokushisa. Izifundo ku-<111>-oriented CVD 3C–SiC zibonisa ukuthi ukuqhuba kwayo kokushisa okungaphandle kungancipha kusukela146.4 W/m·K kuya ku-122.3 W/m·Knjengoba usayizi wezinhlamvu usondela ku-11.04 μm. Esinye isembozo se-β-SiC, esikhiqizwe nge-CVD, sibonisa ukuhanjiswa kokushisa kwe-3.2 W/m·K. Le nto igcina ukuqina okungu-±0.2mm ngisho naku-1600 °C, okubonisa ukuqina kwayo emazingeni okushisa aphezulu enqubo ye-epitaxy. Ukushisa okuphezulu kuvimbela izindawo ezishisayo kanye nezindawo ezibandayo, okungaholela ekukhuleni kwefilimu engalingani.

Ukufana Kwezinga Lokushisa Kuyo Yonke I-Susceptor

Ukufinyelela nokugcina izinga lokushisa elifanayo kulo lonke indawo ye-susceptor kubaluleke kakhulu. Amazinga okushisa angalingani abangela ukwehluka kwamazinga okukhula kanye nezakhiwo zezinto ezibonakalayo kulo lonke i-SiC wafer. Abakhiqizi baklama ama-susceptor ane-geometries ethile kanye nokusatshalaliswa kwezinto ukuze bakhuthaze ukusatshalaliswa kokushisa okulinganayo. Amathuluzi okulingisa ukushisa athuthukisiwe kanye nokulingisa asiza ukuthuthukisa le miklamo. Lokhu kuqinisekisa ukuthi yonke ingxenye ye-wafer ihlangabezana nendawo efanayo yokushisa. Ukufana kwezinga lokushisa okuhlala njalo kuhumusha ngqo ekuvuneni okuphezulu kwe-wafer kanye nokusebenza kwedivayisi okuthuthukisiwe.

Ukuzinza Kokukhishwa Kwezinto Ezingcolile

Ukukhishwa kwempahla, ikhono lomphezulu lokukhipha amandla okushisa, lidlala indima ebalulekile ekulawuleni izinga lokushisa. Ukukhishwa okuzinzile kuqinisekisa ukulinganiswa okunembile kwezinga lokushisa ngama-pyrometer. Kuphinde kusize ekudlulisweni kokushisa okuqhubekayo ngaphakathi kwe-reactor. Izembozo ze-SiC zivame ukubonisa ukukhishwa okuphezulu.

Ama-susceptor asezingeni eliphezulu agcina amanani aqinile okukhipha ugesi phezu kwemijikelezo eminingi ye-epitaxy. Lokhu kuvimbela ukukhukhuleka kokufundwa kwezinga lokushisa futhi kuqinisekisa izimo zenqubo eziphindaphindwayo. Ukuwohloka kokwembozwa noma izinguquko zomphezulu kungashintsha ukukhishwa, okuholela ekungahambelani kwenqubo. Ngakho-ke, abakhiqizi bagxila ekumbozweni okuhlala isikhathi eside okugcina izakhiwo zabo zokukhanya kuyo yonke impilo yabo yokusebenza.

Ukulawulwa Kokukhiqiza kanye Nokuqinisekiswa Kwekhwalithi Kwama-Epitaxial Susceptors

Abakhiqizi basebenzisa izindlela zokulawula eziqinile kanye nezindlela zokuqinisekisa ikhwalithi ukuze kutholakale ikhwalithi ephezuluAma-susceptors e-SiC graphite epitaxial. Le mikhuba iqinisekisa ukuthembeka komkhiqizo kanye nokusebenza okuqhubekayo. Ihlangabezana nezidingo ezidingekayo zokwenziwa kwe-semiconductor okuthuthukisiwe.

Ukuphindaphindeka kanye Nokuhambisana Kweqembu Elilodwa

Ukuphinda kukhiqizwe kubalulekile ekukhiqizeni ama-susceptor asezingeni eliphezulu. Abakhiqizi basungula izilawuli zenqubo eziqinile. Lezi zilawuli ziqinisekisa izakhiwo zezinto ezibonakalayo kanye nokusebenza okuhambisanayo kuzo zonke izinhlobo zokukhiqiza. Basebenzisa ukulawulwa kwenqubo yezibalo (i-SPC) ukuqapha amapharamitha abalulekile. Lokhu kufaka phakathi ukwakheka kwezinto, ukujiya kokumboza, kanye nokubekezelelana kobukhulu. Ukuthola izinto ezingavuthiwe njalo nakho kudlala indima ebalulekile. Kunciphisa ukuhlukahluka komkhiqizo wokugcina. Le ndlela ecophelelayo iqinisekisa ukuthi wonke ama-susceptor enza ngendlela efanayo ephezulu.

Izinqubo Zokuhlola Ezingonakalisi

Izinqubo zokuhlola ezingabhubhisi (NDT) ziqinisekisa ikhwalithi ye-susceptor ngaphandle kokubangela umonakalo. Ukuhlolwa okubonakalayo kukhomba amaphutha noma ukungahambi kahle kobuso. Ukuhlolwa kwamanje kwe-Eddy kuthola amaphutha angaphansi komhlaba kanye nezinkinga zobuqotho bokumboza. Ukuhlolwa kwe-Ultrasonic kungaveza izikhala zangaphakathi noma ukuhlukaniswa. Ukuhlolwa kwe-X-ray kunikeza ukuhlaziywa okuningiliziwe kwesakhiwo sangaphakathi. Lokhu kuhlolwa kuqinisekisa ukuthi ama-susceptor ahlangabezana nemininingwane eqinile yekhwalithi. Kuvimbela imikhiqizo enephutha ukuthi ingene ochungechungeni lokuhlinzeka. Le ndlela yokuqapha igcina ukuthembeka okuphezulu komkhiqizo.

Isitifiketi kanye Nokulandelela

Isitifiketi kanye nokulandelela kunikeza isiqinisekiso sekhwalithi esibalulekile. Abakhiqizi balandela amazinga omhlaba wonke njenge-ISO 9001. Lokhu kubonisa ukuzibophezela ezinhlelweni zokuphatha ikhwalithi. Umthumeli ngamunye uthola isihlonzi esiyingqayizivele. Lokhu kuvumela ukulandelelwa okuphelele kusukela ezintweni zokusetshenziswa kuya kumkhiqizo wokugcina. Kuqopha imininingwane yezinqubo zokukhiqiza, imiphumela yokuhlola, kanye nemvelaphi yezinto ezibonakalayo. Lo mbhalo ophelele uqinisekisa ukuzibophezela. Kuphinde kube lula ukuxazulula izinkinga ngokushesha uma kuvela izinkinga. Isitifiketi kanye nokulandelela kwakha ukuzethemba ngekhwalithi kanye nokusebenza komkhiqizo.

Ama-susceptor epitaxial epitaxial esezingeni eliphezulu e-SiC graphite ngo-2026 azohlangabezana nezindinganiso eziqinile zokuhlanzeka kwezinto ezibonakalayo, ubuqotho bokumboza, ukunemba kobukhulu, kanye nokusebenza kokushisa. Lokhu kuthuthuka kwenza kube lula ukuqhubekela phambili kwe-electronics yamandla e-SiC kanye nezinye izinhlelo zokusebenza ezibalulekile.Amasu okumboza e-SiC athuthukisiwekuthuthukisa ukumelana namazinga okushisa aphezulu kanye nokusabela kwamakhemikhali ngesikhathi se-MOCVD, kuthuthukisa ukusebenza kahle komkhiqizo kanye nokuqina. Umklamo we-susceptor olungiselelwe kahle uqinisekisa ukusatshalaliswa kokushisa okufanayo, okuthuthukisa ngqo ikhwalithi yefilimu ye-semiconductor. Lokhu kuholela ekusebenzeni okungcono kanye nesivuno esiphezulu samadivayisi we-semiconductor.Amandla okusebenza okuthuthukisiwe kanye nokuqhuba ukushisafuthi kunegalelo ekusebenzeni isikhathi eside kanye nokunciphisa ukungcola.

Imibuzo Evame Ukubuzwa

Iyini i-SiC graphite epitaxial susceptor?

Kuyingxenye ebalulekile ku-SiC epitaxy. Ibamba i-wafer ngesikhathi sezinqubo zokukhula kwezinga lokushisa eliphezulu. Ine-substrate ye-graphite ene-SiC coating evikelayo. Lo mklamo uqinisekisa ukushisa okufanayo futhi uvimbela ukungcola.

Kungani ubumsulwa bezinto ezibonakalayo bubalulekile kulaba bantu ababambayo?

Ubumsulwa obukhulu bezinto ezibonakalayo buvimbela ukungcoliswa kwesendlalelo se-SiC epitaxial. Izinto ezilandelwayo zingasebenza njengezinto ezingafuneki. Zidala amaphutha ezintweni ze-semiconductor. I-graphite yobumsulwa obuphezulu kakhulu kanye ne-stoichiometry eqondile ye-SiC coating kubalulekile.

Ubuqotho bokumboza buthinta kanjani ukusebenza kwe-susceptor?

Ukuqina kokumboza kuqinisekisa ukuqina kanye nezimo zenqubo ezihambisanayo. Ubukhulu obufanayo, ukunamathela okuqinile, kanye nokuqina okuphansi kobuso kuvimbela amaphutha. Kuphinde kumelane nokuguguleka nokugqwala. Lokhu kugcina umsebenzi wokuvikela we-susceptor ngokuhamba kwesikhathi.

Iyiphi indima edlalwa ukusebenza kokushisa kwikhwalithi ye-susceptor?

Ukusebenza kahle kokushisa kuqinisekisa ukusatshalaliswa kokushisa okufanayo kuyo yonke i-wafer. Ukushisa okuphezulu kanye nokukhishwa okuzinzile kubalulekile. Lokhu kuholela emazingeni okukhula kwe-SiC aqhubekayo. Kuphinde kuthuthukise ikhwalithi yezingqimba ze-epitaxial.

Abakhiqizi baqinisekisa kanjani ikhwalithi yama-susceptor epitaxial?

Abakhiqizi basebenzisa izilawuli zenqubo eziqinile kanye nokuqinisekiswa kwekhwalithi. Basebenzisa izinqubo zokuhlola ezingonakalisi. Baphinde bagcine isitifiketi esigcwele kanye nokulandelelwa. Lezi zinyathelo ziqinisekisa ukuphindaphindeka kanye nokusebenza okuphezulu okuqhubekayo kuwo wonke umuntu othintekayo.