Amakhonkco okugxila e-CVD coatingZidlala indima ebalulekileyo ekugrumbeni kwe-semiconductor yanamhlanje ngokuzinzisa imida ye-plasma kunye nokuqinisekisa ukusasazwa kwee-ion ezifanayo kwi-wafer. Eli nqaku lichaza isizathu sokuba zibalulekile kwii-nodes eziphambili, ligxininisa impembelelo yazo kwi-etch efanayo, ulawulo lwe-CD, ukunciphisa ungcoliseko, kunye nemveliso yenkqubo iyonke.
Ⅰ. Ukusuka kwiPlasma Etching ukuya kwiFocused Ring Engineering
Ukugrumba ngeplasma yenye yezona teknoloji zibalulekileyo zokulinganisa kwimveliso ye-semiconductor yanamhlanje, okuvumela ukudalwa kweempawu ze-nanoscale ezifunekayo kwizixhobo ze-logic kunye nememori eziphambili. Njengoko ii-node zobuchwepheshe ziqhubeka nokuncipha ngaphantsi kwe-10 nanometers kwaye uyilo lwezixhobo luguqukela kwizakhiwo zeFinFET kunye neGate-All-Around (GAA), ukunyamezelana kokuguquguquka kwenkqubo kuye kwancipha kakhulu. Namhlanje, iiparameter ezifana nokufana kwe-etch, ulawulo lobukhulu obubalulekileyo (CD), kunye noxinano lwe-defect kufuneka zilawulwe ngokuchanekileyo okuphantse kube yi-atomic.
Nangona ukwenziwa ngcono kwenkqubo kudla ngokugxila kwi-plasma chemistry, amandla erediyo (RF), kunye noyilo lwegumbi, into ebaluleke ngokulinganayo—kodwa edla ngokungabalulekanga kangako—ixhomekeke kulawulo lweemeko zomda kwimiphetho ye-wafer. Kulapho kanye i-focus ring idlala indima ebalulekileyo. Ifumaneka ejikeleze i-wafer kwi-electrostatic chuck (ESC), i-focus ring isebenza njengotshintsho lomda, ibumba ngokutsha intsimi yombane yendawo, izinzisa i-plasma sheath, kwaye iqinisekisa ukusasazwa kwee-ion ezifanayo kuwo wonke umphezulu we-wafer.
Kwiindawo eziphambili zokugrumba, iiringi zokugxila ezigqunywe nge-chemical vapor deposition (CVD) ziye zaba ngumgangatho weshishini ngenxa yeempawu zazo eziphezulu zezinto. Ezi nxalenye azizo nje izinto ezisetyenziswayo; ziindawo ezicwangciswe ngokuchanekileyo ezichaphazela ngokuthe ngqo indlela esebenza ngayo iplasma, uzinzo lwenkqubo, kwaye ekugqibeleni zigqibe ekubeni isixhobo siphume njani.
Ⅱ. Kutheni iiRings zokugxila zibalulekile ekukroleni ngokuchanekileyo
Kwiinkqubo zokugrumba ngeplasma, imiphetho yewafer ibonisa ukungaguquguquki kwiimeko zejometri kunye nemida yombane. Ngaphandle kwamanyathelo afanelekileyo okuhlawula, oku kungaguquguquki kukhokelela ekuphazamisekeni okubalulekileyo kwintsimi yombane kunye ne-plasma sheath, okubangela oko kubizwa ngokuba yi "edge effect." Esi siphumo sibonakala njengee-angles ze-ion ezingalinganiyo kunye nokuguquguquka kobuninzi be-ion flux, okubangela ukuphambuka kwizinga le-etch kunye neeprofayili ze-etch kufutshane nomphetho we-wafer.
Izifundo zovavanyo nezethiyori zibonisa ukuba, xa kungekho zakhiwo zokuhlawula umda, ummandla ofikelela kwiimilimitha ezininzi ngaphakathi ukusuka kumphetho we-wafer uba yindawo yomphetho engasetyenziswayo¹. Kwii-nodes zobuchwepheshe obuphambili, apho ubungakanani beetship bukhulu kwaye imida yenkqubo ixinene kakhulu, ukulahleka kwendawo enjalo akwamkelekanga ngokwezoqoqosho.
Ukungeniswa kweringi yokugxila ngokufanelekileyo kwandisa umda weplasma ngaphandle komda we-wafer, ngaloo ndlela kudala isakhiwo se-sheath esifanayo. Ngokubonelela ngendawo yombane neyomzimba elawulwayo, iringi yokugxila iqinisekisa ukuba iindlela zee-ion zihlala zihambelana kakhulu kuyo yonke indawo ye-wafer. Oku kubalulekile ekufezekiseni amanqanaba afanayo afunekayo kwimveliso yobuninzi yanamhlanje; kwiindawo ezinjalo zokuvelisa, injongo yokufana kwe-etch ngaphakathi kwe-wafer ihlala ibekwe ngaphakathi koluhlu lwe-±2%.
Ngaphezu koko, ngokuzinzisa iimeko zomda wegumbi kwiiwafer ezahlukeneyo, iringi yokugxila inceda ukuphucula ukuphindaphinda kwenkqubo. Kwiindawo zokuvelisa ezisebenzisa amandla aphezulu, nokuguquguquka okuncinci kwiimeko zomphetho kunokukhokelela ekuguqukeni kwenkqubo eqokelelweyo; ke ngoko, ukuzinza kokusebenza kweringi yokugxila kubaluleke kakhulu.
Ⅲ. Ixabiso eliPhambili leeCoatings zeCVD
Njengoko iinkqubo zokugrumba ngeplasma zisiba nzima ngakumbi—ingakumbi ngokwamkelwa ngokubanzi kweenkqubo zeekhemikhali ezisekelwe kwi-fluorine kunye ne-chlorine—iimfuno zezinto ezisetyenziswa kwizangqa zokugxila nazo ziye zaba nzima ngakumbi. Izinto zemveli ezifana ne-quartz okanye i-bulk ceramics zihlala zinengxaki yamazinga aphezulu e-etch, ukuthambekela kokuvelisa amasuntswana, kunye nozinzo olubi phantsi kokuvezwa kweplasma ixesha elide. Iingubo ze-CVD—ingakumbi i-CVD SiC (i-silicon carbide) kunye neengubo ze-CVD carbon—ziyoyisa ngempumelelo le mida ngenxa yesakhiwo sazo esikhethekileyo kunye neempawu zeekhemikhali.
Uphawu oluphambili lweengubo zeCVD kukuxinana kwazo okuphezulu kakhulu, okusondele kakhulu kuxinano lwethiyori, kunye nokuxinana kwazo okuphantsi kakhulu, okwandisa kakhulu ukumelana kwazo nokugrumba okubangelwa yiplasma. Izifundo zibonise② ukuba kwindawo yeplasma esekelwe kwifluorine, izinga lokugrumba leCVD SiC lincinci kakhulu kunele quartz, okwenza ukuba ibe yinto efanelekileyo kwiinkqubo zokugrumba ezinamandla aphezulu, ixesha elide. Oku kuqina okwandisiweyo kuthetha ngokuthe ngqo ukuba izinto ziphila ixesha elide kunye nokuncipha kokugcinwa kwazo.
Okubaluleke ngokufanayo ngumba wolawulo longcoliseko. Amasuntswana aveliswa ziinxalenye zegumbi ahlala enye yezona zinto ziphambili zokulahleka kwesivuno kwiinkqubo zokwenziwa kwee-semiconductor eziphambili. Ngokwemigangatho ye-SEMI kunye nezifundo zolawulo longcoliseko ezifanelekileyo, namasuntswana angaphantsi kwe-micron anokubangela iziphene ezibalulekileyo, ngakumbi kwiindawo eziphambili zenkqubo ezingaphantsi kwe-10 nanometers. Iingubo ze-CVD, ezineempawu zazo ezixineneyo nezizinzileyo zomphezulu, zinciphisa kakhulu umngcipheko wokusasazeka kwe-micro-spalling kunye nokukhululwa kokungcola kumphezulu, ngaloo ndlela zinceda ekudaleni imeko-bume yenkqubo ecocekileyo kunye nokuphucula isivuno.
I-CVD SiC Film Crystal kunye ne-Micro Structure
Enye into ebalulekileyo kukulawula ukukhutshwa kwe-electron yesibini (SEE). Ukusebenzisana phakathi kwe-plasma kunye nomphezulu wegumbi kuchaphazeleka kakhulu ziimpawu ze-SEE, ezichaphazela uxinano lwe-plasma kunye nokuzinza. Xa kuthelekiswa nezixhobo zemveli, iindawo ezigqunywe yi-CVD zibonisa iimpawu ze-SEE ezihambelanayo neziqikelelweyo, nto leyo evumela ulawulo oluchanekileyo lweemeko ze-plasma kunye nokuphucula ukuphindaphinda kwenkqubo.
Ukuzinza kobushushu yenye inzuzo ephambili yeengubo zeCVD. Iinkqubo zeplasma ezinoxinano oluphezulu zihlala zivelisa imithwalo ebalulekileyo yobushushu, ngakumbi kwiindawo ezisemaphethelweni e-wafer. Izinto ezifana neCVD SiC zinolawulo oluhle kakhulu lobushushu kunye neempawu zokwandiswa kobushushu ezilawulekayo, zinciphisa ngempumelelo umngcipheko wokuqhekeka, ukugoba, okanye ukwahlukana phantsi koxinzelelo lobushushu olujikelezayo. Olu lwakhiwo lubalulekile ekuqinisekiseni ukusebenza rhoqo kuyo yonke imijikelo yenkqubo eyandisiweyo.
Ⅳ. Impembelelo kwiMilinganiselo yoKusebenza kweKey Etching
Isangqa sokuGxila kwiCoating yeCVD edibeneyo
Le ring yokugxila iya kuba nefuthe elithe ngqo nelinokulinganiswa kwiimitha ezininzi zokusebenza eziphambili kwiinkqubo zokugrumba ze-semiconductor. Enye yezona mitha zibalulekileyo kukufana kwe-etch. Ngokuzinzisa i-plasma sheath kunye nokuqinisekisa ukusasazwa kwe-ion flux efanayo, iiring zokugxila ezine-CVD zivumela ulawulo oluqinileyo kwi-wafer-wide uniformity, zihlala zifezekisa ukuchaneka kwe-±2% okufunekayo kwimveliso yezixhobo eziphambili. Eli nqanaba lolawulo libaluleke kakhulu kwiinkqubo zokugrumba ezinomlinganiselo ophezulu, apho nokuphambuka okuncinci kunokukhokelela ekuphazamisekeni okukhulu kweprofayili ye-etch.
Ulawulo lweCritical Dimension (CD)
Ukuguquguquka kwee-engile ze-ion kwimiphetho ye-wafer kunokubangela ukuphambuka kwe-CD, kwaye le ngxaki iba nzima ngakumbi njengoko ubukhulu beempawu buqhubeka buncipha. Ngokugcina iimeko zentsimi yombane ezihambelanayo, iringi yokugxila inceda ukuqinisekisa ukufana kwimikhondo ye-ion, ngaloo ndlela kunciphisa ukuguquguquka kwe-CD kuyo yonke i-wafer. Oku kubalulekile ekugcineni ukusebenza kwesixhobo kunye nokuhlangabezana neenkcukacha zoyilo kwiindawo eziphambili zenkqubo.
Ukuphucula Ukuphindaphinda Kwenkqubo Nokuzinza
Iingubo zeCVD zibonelela ngomphezulu ozinzileyo nohlala ixesha elide oneempawu ezihlala zifana ngokuhamba kwexesha, ngaloo ndlela zinciphisa ukushukuma kwesimo seplasma kwaye zivumela ukusebenza okuzinzileyo ngakumbi kwiiwafers. Kwiindawo zokuvelisa ezinomthamo omkhulu, oku kubalulekile ekuphunyezweni koLawulo lweNkqubo yeStatistical (SPC).
Ukusebenza okuphuculweyo koLawulo lweeNgcawu
Ukuguguleka okunciphileyo kunye nokuphuculwa kobume bomphezulu kunciphisa ukuveliswa kweesuntswana, nto leyo echaphazela ngokuthe ngqo isivuno kunye nokuthembeka kwesixhobo. Kwimveliso ye-semiconductor ephucukileyo, apho iinjongo zolawulo loxinano lweempazamo zingqongqo kakhulu, olu ncedo lodwa lwanele ukuthethelela ukwamkelwa kwezinto ezigqunywe yi-CVD.
Njengoko iimfuno zeshishini le-semiconductor zokuchaneka kolawulo lwenkqubo kunye nokusebenza kwezinto ziqhubeka nokunyuka, uphuhliso kunye nokunikezelwaIiringi zokugxila ezigqunywe nge-CVDziyanda ziqokelelene phakathi kwabavelisi abambalwa abakhethekileyo nabaqhutywa bubuchwepheshe. Iinkampani ezifanaI-Hexcarbon, I-Vetek SemiconductorkunyeI-SemiceraBamise isikhundla esiqinileyo kwimarike kweli candelo ngokusebenzisa ubuchwepheshe babo obuphambili bokugquma i-CVD, ubuchule bokucubungula izinto ezicocekileyo kakhulu, kunye nokudibanisa okunzulu neemfuno zezixhobo ze-semiconductor. Ngokukodwa, iinkampani ezifana neVetek kunye neSemicera zigxile ekuboneleleni ngezisombululo zobunjineli ezenzelwe wena, ukulungelelanisa uyilo lweeringi zokugxila kwiifomyula ezithile zekhemistri ye-etch kunye namaqonga ezixhobo; ngelixa iHexcarbon yakhe udumo oluqinileyo kwimarike ngokusekelwe kubuchule bayo kwi-graphite ecocekileyo kakhulu kunye nezinto ezigqunywe kwiizicelo ze-semiconductor. Olu dibaniso lobuchule besayensi yezinto kunye nolwazi lwetekhnoloji yenkqubo luvumela ezi nkampani ukuba zihlangabezane neemfuno ezingqongqo ngakumbi zokwenziwa kwe-semiconductor yesizukulwana esilandelayo.
Iireferensi:
"Imigaqo yokukhupha iPlasma kunye nokuCwangciswa kweZixhobo"
"Iphephancwadi leSayensi neTekhnoloji yeVacuum"
Ixesha lokuthumela: Matshi-20-2026