Ngoku sinabasebenzi abaninzi ababalaseleyo abasebenzisa kakuhle kwi-intanethi, kwi-QC, kwaye sisebenza ngeengxaki ezinzima kwindlela yokuvelisa i-Reliable Supplier China High Temperature Resistant Waist Silicon Carbide Graphite Crucible, Sinethemba lokuba siyakhula kunye nabathengi bethu kwihlabathi liphela.
Ngoku sinabasebenzi abaninzi ababalaseleyo abasebenzisa kakuhle kwi-intanethi, kwi-QC, kwaye sisebenza ngeengxaki ezinzima kwindlela yokuvelisa.I-China Crucible, Isiqhoboshi seGrafayithiNamhlanje, sinabathengi abavela kwihlabathi liphela, kuquka i-USA, iRashiya, iSpain, i-Itali, iSingapore, iMalaysia, iThailand, iPoland, i-Iran kunye ne-Iraq. Injongo yenkampani yethu kukubonelela ngempahla esemgangathweni ophezulu ngexabiso elifanelekileyo. Besilangazelela ukwenza ushishino nawe.
Ii-carbon / ii-carbon composite(emva koku kuthiwa “C / C okanye CFC”) luhlobo lwezinto ezidityanisiweyo ezisekelwe kwikhabhoni kwaye ziqiniswe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inamandla ekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukumelana nokugqwala, ukuxinana kunye neempawu zokuqhuba ubushushu kunye nombane.
I-CVD-SiCUkwaleka kuneempawu zesakhiwo esifanayo, izinto ezincinci, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, ukumelana ne-asidi kunye ne-alkali kunye ne-reagent yendalo, eneempawu zomzimba nezizinzileyo.
Xa kuthelekiswa nezinto zegrafiti ezicocekileyo kakhulu, igrafiti iqala ukunyibilika kwi-400C, nto leyo eya kubangela ukulahleka komgubo ngenxa yokunyibilika, nto leyo eya kubangela ungcoliseko lokusingqongileyo kwizixhobo ezingaphandle kunye namagumbi okufunxa, kwaye yonyusa ukungcola kwendawo ecocekileyo kakhulu.
Nangona kunjalo, i-SiC coating inokugcina uzinzo lomzimba kunye neekhemikhali kwi-1600 degrees, Isetyenziswa kakhulu kushishino lwanamhlanje, ngakumbi kushishino lwe-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.
Iimpawu eziphambili:
1. Ukumelana ne-oxidation yobushushu obuphezulu:
Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.
2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.
3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
Iinkcukacha eziphambili zeengubo zeCVD-SIC:
| I-SiC-CVD | ||
| Uxinano | (g/cc)
| 3.21 |
| Amandla okugobeka | (iMpa)
| 470 |
| Ukwandiswa kobushushu | (10-6/K) | 4
|
| Ukuqhuba kobushushu | (W/mK) | 300
|
