Manje sinabasebenzi abaningi abahle kakhulu abasebenzisa ukumaketha kwe-inthanethi, i-QC, futhi sisebenza ngezinkinga ezinzima endleleni yokukhiqiza yoMhlinzeki Othembekile waseShayina Ongamelana Nokushisa Okuphezulu I-Silicon Carbide Graphite Crucible, Ngiyethemba ngobuqotho ukuthi sikhula namakhasimende ethu emhlabeni wonke.
Manje sinabasebenzi abaningi abahle kakhulu abasebenzisa ukumaketha kwe-inthanethi, i-QC, futhi abasebenza ngezinkinga ezinzima endleleni yokukhiqiza.Isitsha Sokucwilisa saseShayina, Isitsha Sokubumba Se-GraphiteNamuhla, sinamakhasimende avela kuwo wonke umhlaba, okuhlanganisa i-USA, iRussia, iSpain, i-Italy, iSingapore, iMalaysia, iThailand, iPoland, i-Iran kanye ne-Iraq. Umsebenzi wenkampani yethu ukuhlinzeka ngezimpahla ezisezingeni eliphezulu ngentengo engcono kakhulu. Besilokhu silangazelela ukwenza ibhizinisi nawe.
Izinhlanganisela zekhabhoni/khabhoni(okuzobizwa ngokuthi “lapha"C/C noma i-CFC") uhlobo lwezinto ezihlanganisiwe ezisekelwe ku-carbon futhi ziqiniswa yi-carbon fiber kanye nemikhiqizo yazo (i-carbon fiber preform). Inamandla okuqina kwe-carbon kanye namandla aphezulu e-carbon fiber. Inezici ezinhle zomshini, ukumelana nokushisa, ukumelana nokugqwala, ukucindezelwa kokungqubuzana kanye nezici zokuqhuba ukushisa kanye nogesi.
I-CVD-SiCUkumboza kunezici zesakhiwo esifanayo, izinto ezihlanganisiwe, ukumelana nokushisa okuphezulu, ukumelana nokushiswa kwe-oxidation, ubumsulwa obuphezulu, ukumelana ne-asidi ne-alkali kanye ne-reagent ephilayo, enezakhiwo zomzimba nezimakhemikhali ezizinzile.
Uma kuqhathaniswa nezinto ze-graphite ezihlanzekile kakhulu, i-graphite iqala uku-oxidation ku-400C, okuzobangela ukulahlekelwa yimpuphu ngenxa yoku-oxidation, okuzoholela ekungcolisweni kwemvelo kumadivayisi angaphandle kanye namakamelo okuhlanza, futhi kwandise ukungcola kwendawo ehlanzekile kakhulu.
Kodwa-ke, ukugqoka kwe-SiC kungagcina ukuzinza ngokomzimba nangokwekhemikhali kuma-degrees angu-1600, Kusetshenziswa kabanzi embonini yanamuhla, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC. I-SIC eyakhiwe iboshwe ngokuqinile esisekelweni se-graphite, inikeza isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite bube buncane, bungabi ne-Porosity, bumelana nokushisa okuphezulu, bumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.
2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
Imininingwane Eyinhloko Yezimbozo ze-CVD-SIC:
| I-SiC-CVD | ||
| Ubuningi | (g/cc)
| 3.21 |
| Amandla okugobeka | (i-Mpa)
| 470 |
| Ukwanda kokushisa | (10-6/K) | 4
|
| Ukuqhuba kwe-thermal | (W/mK) | 300
|
