Siyazi ukuba siyachuma kuphela ukuba sinokuqinisekisa ukhuphiswano lwethu lwamaxabiso adibeneyo kunye nomgangatho olungileyo ngaxeshanye kubaboneleli abaPhambili abaNgcono abaNgwevu abaMnyama beSilicon Carbide Sic Carborundum China High Purity, Siyamkela abathengi abatsha nabangaphambili abavela kuzo zonke iinkalo zobomi ukuba bathethe nathi ukuze bafumane ubudlelwane obubonakalayo bentlangano kwixesha elizayo kwaye bafumane impumelelo efanayo!
Siyazi ukuba siyachuma kuphela xa sinokuqinisekisa ukuba amaxabiso ethu adibeneyo aya kukhuphisana kwaye umgangatho wethu uya kuba luncedo ngaxeshanyeIzinto zokugquma zaseTshayina, I-Titanium Dioxide, Inkampani yethu ixhasa umoya "wokuvelisa izinto ezintsha, ukuvumelana, ukusebenzisana njengeqela nokwabelana, iindlela, inkqubela phambili esebenzayo". Sinike ithuba kwaye siza kubonisa ubuchule bethu. Ngoncedo lwakho lobubele, sikholelwa ukuba singadala ikamva eliqaqambileyo kunye nani.
Ii-carbon / ii-carbon composite(emva koku kuthiwa “C / C okanye CFC”) luhlobo lwezinto ezidityanisiweyo ezisekelwe kwikhabhoni kwaye ziqiniswe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inamandla ekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukumelana nokugqwala, ukuxinana kunye neempawu zokuqhuba ubushushu kunye nombane.
I-CVD-SiCUkwaleka kuneempawu zesakhiwo esifanayo, izinto ezincinci, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, ukumelana ne-asidi kunye ne-alkali kunye ne-reagent yendalo, eneempawu zomzimba nezizinzileyo.
Xa kuthelekiswa nezinto zegrafiti ezicocekileyo kakhulu, igrafiti iqala ukunyibilika kwi-400C, nto leyo eya kubangela ukulahleka komgubo ngenxa yokunyibilika, nto leyo eya kubangela ungcoliseko lokusingqongileyo kwizixhobo ezingaphandle kunye namagumbi okufunxa, kwaye yonyusa ukungcola kwendawo ecocekileyo kakhulu.
Nangona kunjalo, i-SiC coating inokugcina uzinzo lomzimba kunye neekhemikhali kwi-1600 degrees, Isetyenziswa kakhulu kushishino lwanamhlanje, ngakumbi kushishino lwe-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.
Iimpawu eziphambili:
1. Ukumelana ne-oxidation yobushushu obuphezulu:
Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.
2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.
3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
Iinkcukacha eziphambili zeengubo zeCVD-SIC:
| I-SiC-CVD | ||
| Uxinano | (g/cc)
| 3.21 |
| Amandla okugobeka | (iMpa)
| 470 |
| Ukwandiswa kobushushu | (10-6/K) | 4
|
| Ukuqhuba kobushushu | (W/mK) | 300
|
