Laini ọja VET Energy ko ni opin si GaN lori awọn wafers SiC. A tun pese ọpọlọpọ awọn ohun elo sobusitireti semikondokito, pẹlu Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, bbl Ni afikun, a tun n ṣiṣẹ lọwọ ni idagbasoke awọn ohun elo semikondokito jakejado bandgap tuntun, gẹgẹ bi Gallium Oxide Ga2O3 ati AlN Wafer, lati pade ibeere ile-iṣẹ eletiriki agbara iwaju fun awọn ẹrọ iṣẹ ṣiṣe ti o ga julọ.
Agbara VET n pese awọn iṣẹ isọdi ti o rọ, ati pe o le ṣe akanṣe awọn ipele GaN epitaxial ti awọn sisanra oriṣiriṣi, awọn oriṣiriṣi doping, ati awọn iwọn wafer oriṣiriṣi gẹgẹbi awọn iwulo pato ti awọn alabara. Ni afikun, a tun pese atilẹyin imọ-ẹrọ ọjọgbọn ati iṣẹ-tita lẹhin-tita lati ṣe iranlọwọ fun awọn alabara ni iyara lati dagbasoke awọn ẹrọ itanna agbara-giga.
WAFERING ni pato
*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating
| Nkan | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Ps | SI | SI | |
| TTV(GBIR) | ≤6um | ≤6um | |||
| Teriba(GF3YFCD) -Iye to peye | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
| Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
| LTV (SBIR) -10mmx10mm | <2μm | ||||
| Wafer eti | Beveling | ||||
Ipari dada
*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating
| Nkan | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Ps | SI | SI | |
| Dada Ipari | Polish Optical ẹgbẹ meji, Si- Face CMP | ||||
| SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
| Awọn eerun eti | Ko si Gbigbanilaaye (ipari ati iwọn≥0.5mm) | ||||
| Indents | Ko Si Iyọọda | ||||
| Awọn idọti (Si-Face) | Qty.≤5, Akopọ | Qty.≤5, Akopọ | Qty.≤5, Akopọ | ||
| Awọn dojuijako | Ko Si Iyọọda | ||||
| Iyasoto eti | 3mm | ||||







