Gabatarwa ga semiconductor na ƙarni na uku GaN da fasahar epitaxial masu alaƙa

1. Semiconductor na ƙarni na uku

An ƙirƙiro fasahar semiconductor ta ƙarni na farko bisa ga kayan semiconductor kamar Si da Ge. Ita ce tushen kayan haɓaka transistor da fasahar da'ira mai haɗaka. Kayan semiconductor na ƙarni na farko sun kafa harsashin masana'antar lantarki a ƙarni na 20 kuma su ne kayan aikin da ake amfani da su wajen haɗa fasahar da'ira.

Kayan semiconductor na ƙarni na biyu galibi sun haɗa da gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, aluminum arsenide da mahaɗan su na ternary. Kayan semiconductor na ƙarni na biyu sune ginshiƙin masana'antar bayanai ta optoelectronic. A kan wannan tushen, an haɓaka masana'antu masu alaƙa kamar haske, nuni, laser, da photovoltaics. Ana amfani da su sosai a cikin fasahar bayanai ta zamani da masana'antar nuni ta optoelectronic.

Wakilan kayan aikin semiconductor na ƙarni na uku sun haɗa da gallium nitride da silicon carbide. Saboda faɗin rata, saurin juyewar electron mai yawa, ƙarfin zafi mai yawa, da ƙarfin filin fashewa mai yawa, su ne kayan da suka dace don shirya na'urorin lantarki masu ƙarfi, mita mai yawa, da ƙarancin asara. Daga cikinsu, na'urorin wutar lantarki na silicon carbide suna da fa'idodin yawan kuzari mai yawa, ƙarancin amfani da makamashi, da ƙaramin girma, kuma suna da fa'idodin aikace-aikace masu faɗi a cikin sabbin motocin makamashi, photovoltaics, sufuri na jirgin ƙasa, manyan bayanai, da sauran fannoni. Na'urorin RF na Gallium nitride suna da fa'idodin yawan mita, babban iko, babban bandwidth, ƙarancin amfani da wutar lantarki da ƙaramin girma, kuma suna da fa'idodin aikace-aikace masu faɗi a cikin sadarwa ta 5G, Intanet na Abubuwa, radar soja da sauran fannoni. Bugu da ƙari, an yi amfani da na'urorin wutar lantarki masu tushen gallium nitride sosai a cikin filin ƙarancin wutar lantarki. Bugu da ƙari, a cikin 'yan shekarun nan, ana sa ran kayan gallium oxide masu tasowa za su samar da haɗin gwiwa na fasaha tare da fasahar SiC da GaN da ake da su, kuma suna da yuwuwar amfani da fasahar a cikin ƙananan mita da manyan filayen wutar lantarki.

Idan aka kwatanta da kayan semiconductor na ƙarni na biyu, kayan semiconductor na ƙarni na uku suna da faɗin bandgap mai faɗi (faɗin bandgap na Si, wani abu na yau da kullun na kayan semiconductor na ƙarni na farko, yana da kusan 1.1eV, faɗin bandgap na GaAs, wani abu na yau da kullun na kayan semiconductor na ƙarni na biyu, yana da kusan 1.42eV, kuma faɗin bandgap na GaN, wani abu na yau da kullun na kayan semiconductor na ƙarni na uku, yana sama da 2.3eV), juriya mai ƙarfi ga radiation, juriya mai ƙarfi ga rushewar filin lantarki, da juriya mai zafi mafi girma. Kayan semiconductor na ƙarni na uku tare da faɗin bandgap mai faɗi sun dace musamman don samar da na'urorin lantarki masu jure radiation, mita mai yawa, ƙarfi mai yawa da haɗin kai mai yawa. Aikace-aikacen su a cikin na'urorin mitar rediyo na microwave, LEDs, lasers, na'urorin wutar lantarki da sauran fannoni sun jawo hankali sosai, kuma sun nuna fa'idodi masu faɗi na ci gaba a cikin sadarwa ta hannu, grid mai wayo, jigilar jirgin ƙasa, sabbin motocin makamashi, kayan lantarki na mabukaci, da na'urorin haske na ultraviolet da shuɗi-kore [1].