Nhanganyaya kune chizvarwa chechitatu che semiconductor GaN uye tekinoroji yakabatana ye epitaxial

1. Michina yesemiconductor yechizvarwa chechitatu

Tekinoroji ye semiconductor yechizvarwa chekutanga yakagadzirwa zvichibva pazvinhu zve semiconductor zvakaita seSi naGe. Ndiyo hwaro hwezvinhu zvekugadzirwa kwema transistors uye tekinoroji ye integrated circuit. Zvinhu zve semiconductor zvechizvarwa chekutanga zvakaisa hwaro hweindasitiri yemagetsi muzana remakore rechi20 uye ndizvo zvinhu zvekutanga zve tekinoroji ye integrated circuit.

Zvinhu zve semiconductor zvechizvarwa chechipiri zvinosanganisira gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, aluminium arsenide pamwe chete nemakemikari azvo eternary. Zvinhu zve semiconductor zvechizvarwa chechipiri ndizvo hwaro hweindasitiri yeruzivo rwe optoelectronic. Pachikonzero ichi, maindasitiri ane hukama akadai semwenje, display, laser, uye photovoltaics akagadzirwa. Anoshandiswa zvakanyanya muindasitiri yeruzivo yemazuva ano uye maindasitiri e optoelectronic display.

Zvinhu zvinomiririrwa nezvinhu zve semiconductor zvechizvarwa chechitatu zvinosanganisira gallium nitride nesilicon carbide. Nekuda kwehupamhi hwebhendi razvo, kumhanya kwakanyanya kweelectron saturation drift, high thermal conductivity, uye high breakdown field strength, zvinhu zvakanaka zvekugadzirira michina yemagetsi ine simba rakawanda, high-frequency, uye low-loss. Pakati pazvo, michina yemagetsi yesilicon carbide ine zvakanakira zve high-energy density, low energy consumption, uye small size, uye ine mikana yakawanda yekushandisa mumotokari itsva dzesimba, photovoltaics, rail transportation, big data, nedzimwe nzvimbo. Midziyo yeGallium nitride RF ine zvakanakira zve high frequency, high energy, wide bandwidth, low energy consumption uye small size, uye ine mikana yakawanda yekushandisa mu 5G communications, Internet of Things, military radar nedzimwe nzvimbo. Pamusoro pezvo, michina yemagetsi yakavakirwa pa gallium nitride yakashandiswa zvakanyanya mumunda une voltage shoma. Pamusoro pezvo, mumakore achangopfuura, zvinhu zvitsva zve gallium oxide zvinotarisirwa kuumba technical complementation neSiC neGaN technologies dziripo, uye zvine mikana inogona kushandiswa muminda ine voltage shoma ne high-voltage.

Zvichienzaniswa nezvinhu zve semiconductor zvechizvarwa chechipiri, zvinhu zve semiconductor zvechizvarwa chechitatu zvine upamhi hwakakura hwe bandgap (upamhi hwe bandgap hweSi, chinhu chakajairika che semiconductor yechizvarwa chekutanga, inenge 1.1eV, upamhi hwe bandgap hweGaAs, chinhu chakajairika che semiconductor yechizvarwa chechipiri, inenge 1.42eV, uye upamhi hwe bandgap hweGaN, chinhu chakajairika che semiconductor yechizvarwa chechitatu, huri pamusoro pe 2.3eV), kuramba kwakasimba kwemwaranzi, kuramba kwakasimba kumagetsi emagetsi, uye kuramba kupisa kwakanyanya. Zvinhu zve semiconductor zvechizvarwa chechitatu zvine upamhi hwakakura hwe bandgap zvinonyanya kukodzera kugadzirwa kwemidziyo yemagetsi inodzivirira mwaranzi, high-frequency, high-power uye high-integration-density. Mashandisirwo azvo mumidziyo ye microwave radio frequency, LEDs, lasers, midziyo yemagetsi nedzimwe nzvimbo zvakakwezva kutariswa kukuru, uye zvakaratidza mikana yakakura yekuvandudza mukutaurirana kwemafoni, smart grids, transit yechitima, mota itsva dzesimba, consumer electronics, uye ultraviolet neblue-green light devices [1].