Hordhac ku saabsan semiconductor-ka jiilka saddexaad ee GaN iyo tikniyoolajiyadda epitaxial ee la xiriirta

1. Semiconductor-yada jiilka saddexaad

Tiknoolajiyadda semiconductor-ka ee jiilka koowaad waxaa lagu sameeyay iyadoo lagu saleynayo agabka semiconductor-ka sida Si iyo Ge. Waa saldhigga agabka ee horumarinta transistor-yada iyo tignoolajiyada wareegga isku dhafan. Agabka semiconductor-ka ee jiilka koowaad ayaa aasaaska u dhigay warshadaha elektaroonigga ah qarnigii 20-aad waana agabka aasaasiga ah ee tignoolajiyada wareegga isku dhafan.

Qalabka semiconductor-ka ee jiilka labaad waxaa inta badan ka mid ah gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, aluminium arsenide iyo isku-dhisyadooda hoose. Qalabka semiconductor-ka ee jiilka labaad waa aasaaska warshadaha macluumaadka optoelectronic. Sidaas awgeed, waxaa la sameeyay warshado la xiriira sida nalalka, bandhigga, laysarka, iyo photovoltaics. Waxaa si weyn loogu isticmaalaa warshadaha casriga ah ee tignoolajiyada macluumaadka iyo bandhigga optoelectronic.

Agabka matalaya ee agabka semiconductor-ka jiilka saddexaad waxaa ka mid ah gallium nitride iyo silicon carbide. Sababtoo ah farqiga ballaaran ee band-ka, xawaaraha qulqulka sare ee electron-ka, kulaylka sare ee kulaylka, iyo xoogga goobta burburka sare, waa agab ku habboon diyaarinta cufnaanta awoodda sare, soo noqnoqoshada sare, iyo aaladaha elektarooniga ah ee khasaaraha hooseeya. Kuwaas waxaa ka mid ah, aaladaha korontada ee silicon carbide waxay leeyihiin faa'iidooyinka cufnaanta tamarta sare, isticmaalka tamarta hooseeya, iyo cabbirka yar, waxayna leeyihiin rajo ballaaran oo codsi ah oo ku saabsan gawaarida tamarta cusub, photovoltaics, gaadiidka tareenka, xogta weyn, iyo meelaha kale. Aaladaha RF ee Gallium nitride waxay leeyihiin faa'iidooyinka soo noqnoqoshada sare, awoodda sare, baaxadda ballaaran, isticmaalka awoodda hoose iyo cabbirka yar, waxayna leeyihiin rajo ballaaran oo codsi ah oo ku saabsan isgaarsiinta 5G, Internetka Waxyaabaha, radar-ka militariga iyo meelaha kale. Intaa waxaa dheer, aaladaha korontada ee ku salaysan gallium nitride ayaa si weyn loogu isticmaalay goobta danab-yar. Intaa waxaa dheer, sannadihii ugu dambeeyay, agabka gallium oxide ee soo baxaya ayaa la filayaa inay sameeyaan is-waafajin farsamo oo leh teknoolojiyada SiC iyo GaN ee jira, waxayna leeyihiin rajo suurtagal ah oo codsi ah oo ku saabsan goobaha soo noqnoqda hoose iyo danab-yar.

Marka la barbardhigo agabka semiconductor-ka jiilka labaad, agabka semiconductor-ka jiilka saddexaad wuxuu leeyahay ballaca bandgap ballaaran (ballaca bandgap ee Si, oo ah walax caadi ah oo ka mid ah walaxda semiconductor-ka jiilka koowaad, waa qiyaastii 1.1eV, ballaca bandgap ee GaAs, oo ah walax caadi ah oo ka mid ah walaxda semiconductor-ka jiilka labaad, waa qiyaastii 1.42eV, ballaca bandgap ee GaN, oo ah walax caadi ah oo ka mid ah walaxda semiconductor-ka jiilka saddexaad, wuxuu ka sarreeyaa 2.3eV), iska caabin xooggan oo shucaac ah, iska caabin xooggan oo ka dhan ah burburka goobta korontada, iyo iska caabin heer sare ah. Agabka semiconductor-ka jiilka saddexaad oo leh ballaca bandgap ballaaran ayaa si gaar ah ugu habboon soo saarista aaladaha elektarooniga ah ee u adkaysta shucaaca, soo noqnoqoshada sare, awoodda sare iyo isku-dhafka sare. Adeegsigooda aaladaha soo noqnoqda raadiyaha microwave-ka, LED-yada, laysarka, aaladaha korontada iyo meelaha kale ayaa soo jiitay dareen badan, waxayna muujiyeen rajooyin horumarineed oo ballaaran oo ku saabsan isgaarsiinta moobaylka, shabakadaha caqliga badan, gaadiidka tareenka, gawaarida tamarta cusub, elektaroonigga macaamiisha, iyo aaladaha iftiinka ultraviolet iyo buluug-cagaaran [1].