Isingeniso ku-GaN yesizukulwane sesithathu se-semiconductor kanye nobuchwepheshe obuhlobene be-epitaxial

1. Ama-semiconductor esizukulwane sesithathu

Ubuchwepheshe be-semiconductor besizukulwane sokuqala bathuthukiswa ngokusekelwe ezintweni ze-semiconductor ezifana ne-Si ne-Ge. Buyisisekelo sezinto ezibonakalayo sokuthuthukiswa kwama-transistors kanye nobuchwepheshe besekethe ehlanganisiwe. Izinto ze-semiconductor zesizukulwane sokuqala zabeka isisekelo semboni ye-elekthronikhi ngekhulu lama-20 futhi ziyizinto eziyisisekelo zobuchwepheshe besekethe ehlanganisiwe.

Izinto ze-semiconductor zesizukulwane sesibili zifaka phakathi i-gallium arsenide, i-indium phosphide, i-gallium phosphide, i-indium arsenide, i-aluminium arsenide kanye nama-compounds azo e-ternary. Izinto ze-semiconductor zesizukulwane sesibili ziyisisekelo semboni yolwazi lwe-optoelectronic. Ngalesi sisekelo, izimboni ezihlobene ezifana nokukhanyisa, ukubonisa, i-laser, kanye ne-photovoltaics ziye zathuthukiswa. Zisetshenziswa kabanzi kwezobuchwepheshe bolwazi besimanje kanye nezimboni zokubonisa ze-optoelectronic.

Izinto ezimele izinto ze-semiconductor zesizukulwane sesithathu zifaka i-gallium nitride kanye ne-silicon carbide. Ngenxa yegebe lazo elibanzi lebhendi, ijubane eliphezulu lokukhukhuleka kwe-electron saturation, ukuqhuba okuphezulu kokushisa, kanye namandla ensimu okuqhekeka okuphezulu, ziyizinto ezifanele zokulungiselela amadivayisi kagesi anamandla aphezulu, amaza aphezulu, kanye nokulahlekelwa okuphansi. Phakathi kwazo, amadivayisi kagesi e-silicon carbide anezinzuzo zobuningi bamandla aphezulu, ukusetshenziswa kwamandla aphansi, kanye nosayizi omncane, futhi anamathemba okusetshenziswa abanzi ezimotweni zamandla amasha, ama-photovoltaics, ezokuthutha ngesitimela, i-big data, kanye neminye imikhakha. Amadivayisi e-Gallium nitride RF anezinzuzo zobuningi bamandla aphezulu, amandla aphezulu, i-bandwidth ebanzi, ukusetshenziswa kwamandla aphansi kanye nosayizi omncane, futhi anamathemba okusetshenziswa abanzi ekuxhumaneni kwe-5G, i-Internet of Things, i-radar yezempi kanye neminye imikhakha. Ngaphezu kwalokho, amadivayisi kagesi asekelwe ku-gallium nitride asetshenziswe kabanzi ensimini yamandla aphansi. Ngaphezu kwalokho, eminyakeni yamuva nje, izinto ezintsha ze-gallium oxide kulindeleke ukuthi zakhe ukuhambisana kobuchwepheshe nobuchwepheshe obukhona be-SiC kanye ne-GaN, futhi zinamathemba okusetshenziswa angase abe khona emasimini anamandla aphansi kanye namandla aphezulu.

Uma kuqhathaniswa nezinto ze-semiconductor zesizukulwane sesibili, izinto ze-semiconductor zesizukulwane sesithathu zinobubanzi be-bandgap ebanzi (ububanzi be-bandgap ye-Si, into ejwayelekile yezinto ze-semiconductor zesizukulwane sokuqala, cishe yi-1.1eV, ububanzi be-bandgap ye-GaAs, into ejwayelekile yezinto ze-semiconductor zesizukulwane sesibili, cishe yi-1.42eV, kanti ububanzi be-bandgap ye-GaN, into ejwayelekile yezinto ze-semiconductor zesizukulwane sesithathu, bungaphezu kwe-2.3eV), ukumelana nemisebe okunamandla, ukumelana okunamandla kokuqhekeka kwensimu kagesi, kanye nokumelana nokushisa okuphezulu. Izinto ze-semiconductor zesizukulwane sesithathu ezinobubanzi be-bandgap ebanzi zifaneleka kakhulu ekukhiqizweni kwamadivayisi kagesi amelana nemisebe, ama-frequency aphezulu, amandla aphezulu kanye nokuhlanganiswa okuphezulu. Ukusetshenziswa kwazo kumadivayisi e-microwave radio frequency, ama-LED, ama-laser, amadivayisi kagesi nakwamanye amasimu kudonsele ukunaka okukhulu, futhi zibonise amathuba amaningi entuthuko kwezokuxhumana eziphathwayo, ama-smart grid, ezokuthutha ngesitimela, izimoto zamandla amasha, ama-electronics abathengi, kanye namadivayisi okukhanya kwe-ultraviolet nokuluhlaza okwesibhakabhaka [1].