Intshayelelo kwisizukulwana sesithathu se-semiconductor GaN kunye netekhnoloji ye-epitaxial enxulumene nayo

1. Ii-semiconductors zesizukulwana sesithathu

Itekhnoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizixhobo ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto zophuhliso lwee-transistors kunye netekhnoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zabeka isiseko soshishino lwe-elektroniki kwinkulungwane yama-20 kwaye zizixhobo ezisisiseko zobuchwepheshe besekethe edibeneyo.

Izixhobo ze-semiconductor zesizukulwana sesibini ziquka i-gallium arsenide, i-indium phosphide, i-gallium phosphide, i-indium arsenide, i-aluminium arsenide kunye neekhompawundi zazo ze-ternary. Izixhobo ze-semiconductor zesizukulwana sesibini zisisiseko soshishino lolwazi lwe-optoelectronic. Ngenxa yesi sizathu, amashishini anxulumeneyo afana nokukhanyisa, ukubonisa, i-laser, kunye ne-photovoltaics aye aphuhliswa. Zisetyenziswa kakhulu kumashishini olwazi lwanamhlanje kunye nokubonisa i-optoelectronic.

Izinto ezimele izixhobo ze-semiconductor zesizukulwana sesithathu ziquka i-gallium nitride kunye ne-silicon carbide. Ngenxa yesithuba sazo esikhulu sebhendi, isantya esiphezulu sokutyibilika kwe-electron saturation, ukuqhuba okuphezulu kobushushu, kunye namandla entsimi yokuqhekeka okuphezulu, zizixhobo ezifanelekileyo zokulungiselela izixhobo ze-elektroniki ezinobunzima obuphezulu, eziphindaphindayo, kunye nezilahleko eziphantsi. Phakathi kwazo, izixhobo zamandla ze-silicon carbide zineengenelo zobuninzi bamandla, ukusetyenziswa kwamandla aphantsi, kunye nobukhulu obuncinci, kwaye zineengenelo zokusetyenziswa ngokubanzi kwizithuthi zamandla amatsha, ii-photovoltaics, ukuthuthwa koololiwe, i-big data, kunye nezinye iindawo. Izixhobo ze-Gallium nitride RF zineengenelo zobuninzi obuphezulu, amandla aphezulu, i-bandwidth ebanzi, ukusetyenziswa kwamandla aphantsi kunye nobukhulu obuncinci, kwaye zineengenelo zokusetyenziswa ngokubanzi kunxibelelwano lwe-5G, kwi-Intanethi yezinto, kwi-radar yomkhosi nakwezinye iindawo. Ukongeza, izixhobo zamandla ezisekelwe kwi-gallium nitride zisetyenziswe kakhulu kwintsimi enombane ophantsi. Ukongeza, kwiminyaka yakutshanje, izinto ezisandula kuvela ze-gallium oxide kulindeleke ukuba zenze ukuhambelana kobuchwepheshe kunye nobuchwepheshe be-SiC kunye ne-GaN obukhoyo, kwaye zineengenelo zokusetyenziswa ezinokubakho kwiindawo ezinombane ophantsi kunye nombane ophakamileyo.

Xa kuthelekiswa nezixhobo ze-semiconductor zesizukulwana sesibini, izixhobo ze-semiconductor zesizukulwana sesithathu zinobubanzi be-bandgap ebanzi (ububanzi be-bandgap ye-Si, into eqhelekileyo yezinto ze-semiconductor zesizukulwana sokuqala, malunga ne-1.1eV, ububanzi be-bandgap ye-GaAs, into eqhelekileyo yezinto ze-semiconductor zesizukulwana sesibini, malunga ne-1.42eV, kwaye ububanzi be-bandgap ye-GaN, into eqhelekileyo yezinto ze-semiconductor zesizukulwana sesithathu, ingaphezulu kwe-2.3eV), ukumelana nemitha enamandla, ukumelana namandla okuqhekeka kwentsimi yombane, kunye nokumelana nobushushu obuphezulu. Izixhobo ze-semiconductor zesizukulwana sesithathu ezinobubanzi be-bandgap ebanzi zifanelekile ngokukodwa kwimveliso yezixhobo ze-elektroniki ezimelana nemitha, ezisebenzisa i-frequency ephezulu, ezinamandla aphezulu kunye noxinano oluphezulu. Ukusetyenziswa kwazo kwizixhobo ze-microwave radio frequency, ii-LED, ii-laser, izixhobo zamandla kunye nezinye iindawo zitsale ingqalelo enkulu, kwaye zibonise amathuba ophuhliso olubanzi kunxibelelwano oluphathwayo, iigridi ezikrelekrele, uthutho lwesitimela, izithuthi zamandla amatsha, ii-elektroniki zabathengi, kunye nezixhobo zokukhanya ze-ultraviolet kunye neblue-green [1].