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I ka hoʻomau ʻana o nā kaʻina hana semiconductor i ka holomua, ua laha ka ʻōlelo kaulana i kapa ʻia ʻo "Moore's Law" i loko o ka ʻoihana. Ua hāpai ʻia e Gordon Moore, kekahi o nā mea hoʻokumu o Intel, i ka makahiki 1965. ʻO kāna ʻike nui: ʻo ka nui o nā transistors i hiki ke hoʻokipa ʻia ma kahi kaapuni i hoʻohui ʻia e pāpālua ma kahi o kēlā me kēia 18 a 24 mau mahina. ʻAʻole wale kēia kānāwai he loiloi a me ka wānana o ke ʻano hoʻomohala o ka ʻoihana, akā he ikaika hoʻi no ka hoʻomohala ʻana i nā kaʻina hana semiconductor - ʻo nā mea āpau e hana i nā transistors me ka liʻiliʻi o ka nui a me ka hana paʻa. Mai ka makahiki 1950 a hiki i kēia manawa, ma kahi o 70 mau makahiki, ua hoʻomohala ʻia ka huina o BJT, MOSFET, CMOS, DMOS, a me nā ʻenehana hana hybrid BiCMOS a me BCD.
1. BJT
ʻO ka transistor hui bipolar (BJT), i ʻike nui ʻia ʻo triode. ʻO ke kahe ʻana o ka uku i loko o ka transistor ma muli nui o ka neʻe ʻana o ka diffusion a me ka drift o nā mea lawe ma ka PN junction. No ka mea, pili ia i ke kahe ʻana o nā electrons a me nā lua, ua kapa ʻia ʻo ia he mea bipolar.
Ke nānā nei i hope i ka mōʻaukala o kona hānau ʻana. Ma muli o ka manaʻo o ka hoʻololi ʻana i nā triodes vacuum me nā amplifiers paʻa, ua manaʻo ʻo Shockley e hana i ka noiʻi kumu ma nā semiconductors i ke kauwela o 1945. I ka hapa lua o 1945, ua hoʻokumu ʻo Bell Labs i kahi hui noiʻi physics solid-state i alakaʻi ʻia e Shockley. Ma kēia hui, ʻaʻole wale nā physicists, akā ʻo nā ʻenekinia kaapuni a me nā chemists, me Bardeen, he physicist theoretical, a me Brattain, he physicist hoʻokolohua. I Dekemaba 1947, ua hana maikaʻi ʻia kahi hanana i manaʻo ʻia he milestone e nā hanauna ma hope - ua hoʻokumu maikaʻi ʻo Bardeen lāua ʻo Brattain i ka transistor point-contact germanium mua o ka honua me ka hoʻonui ʻana o ke au.
ʻO ka transistor hoʻokaʻaʻike kiko mua a Bardeen lāua ʻo Brattain
Ma hope koke iho, ua hana ʻo Shockley i ka transistor hui bipolar i ka makahiki 1948. Ua hāpai ʻo ia e hiki ke haku ʻia ka transistor me ʻelua mau hui pn, hoʻokahi i hoʻohālikelike ʻia i mua a ʻo kekahi i hoʻohālikelike ʻia i hope, a loaʻa iā ia kahi palapala Sila Nui i Iune 1948. I ka makahiki 1949, ua paʻi ʻo ia i ke kumumanaʻo kikoʻī o ka hana ʻana o ka transistor hui. Ma mua o ʻelua mau makahiki ma hope mai, ua hoʻomohala nā kānaka ʻepekema a me nā ʻenekinia ma Bell Labs i kahi kaʻina hana e hoʻokō ai i ka hana nui ʻana o nā transistors hui (milestone i ka makahiki 1951), e wehe ana i kahi au hou o ka ʻenehana uila. Ma ka ʻike ʻana i kā lākou hāʻawi ʻana i ka hana ʻana o nā transistors, ua lanakila pū ʻo Shockley, Bardeen lāua ʻo Brattain i ka makana Nobel ma Physics i ka makahiki 1956.
Kiʻikuhi hoʻonohonoho maʻalahi o ka transistor hui bipolar NPN
E pili ana i ke ʻano o nā transistors hui bipolar, ʻo nā BJT maʻamau ʻo NPN a me PNP. Hōʻike ʻia ke ʻano kikoʻī o loko ma ke kiʻi ma lalo nei. ʻO ka ʻāpana semiconductor haumia e pili ana i ka emitter ʻo ia ka ʻāpana emitter, nona ka nui o ka doping; ʻo ka ʻāpana semiconductor haumia e pili ana i ke kumu ʻo ia ka ʻāpana kumu, nona ka laulā lahilahi loa a me ka haʻahaʻa loa o ka doping; ʻo ka ʻāpana semiconductor haumia e pili ana i ka mea hōʻiliʻili ʻo ia ka ʻāpana hōʻiliʻili, nona ka ʻāpana nui a me ka haʻahaʻa loa o ka doping.
ʻO nā pono o ka ʻenehana BJT ka wikiwiki pane kiʻekiʻe, ka transconductance kiʻekiʻe (nā loli voltage hoʻokomo e pili ana i nā loli nui o ke au puka), ka walaʻau haʻahaʻa, ka pololei analog kiʻekiʻe, a me ka hiki ke hoʻokele au ikaika; ʻo nā hemahema ka hoʻohui haʻahaʻa (ʻaʻole hiki ke hoʻemi ʻia ka hohonu kū me ka nui o ka ʻaoʻao) a me ka hoʻohana ʻana i ka mana kiʻekiʻe.
2. MOS
ʻO ka Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), ʻo ia hoʻi, kahi transistor hopena kahua e kāohi ana i ke kuapo o ke kahawai alakaʻi semiconductor (S) ma o ka hoʻopili ʻana i ka uila i ka puka o ka papa metala (M-metal alumini) a me ke kumu ma o ka papa oxide (O-insulating layer SiO2) e hana i ka hopena o ke kahua uila. ʻOiai ua hoʻokaʻawale ʻia ka puka a me ke kumu, a me ka puka a me ka ʻauwai e ka papa insulating SiO2, ua kapa ʻia ʻo MOSFET he transistor hopena kahua puka insulated. I ka makahiki 1962, ua hoʻolaha kūhelu ʻo Bell Labs i ka holomua o ka hoʻomohala ʻana, i lilo i hoʻokahi o nā milestones koʻikoʻi i ka mōʻaukala o ka hoʻomohala semiconductor a kau pololei i ke kahua loea no ka hiki ʻana mai o ka hoʻomanaʻo semiconductor.
Hiki ke hoʻokaʻawale ʻia ʻo MOSFET i ke kahawai P a me ke kahawai N e like me ke ʻano o ke kahawai alakaʻi. Wahi a ka amplitude voltage gate, hiki ke hoʻokaʻawale ʻia i: ʻano depletion-i ka wā ʻole o ka voltage gate, aia kahi kahawai alakaʻi ma waena o ka hoʻokahe a me ke kumu; ʻano hoʻonui-no nā mea hana kahawai N (P), aia kahi kahawai alakaʻi wale nō i ka wā ʻoi aku ka nui o ka voltage gate ma mua o (emi ma mua o) zero, a ʻo ka mana MOSFET ka ʻano hoʻonui kahawai N.
ʻO nā ʻokoʻa nui ma waena o MOS a me triode e komo pū me kēia mau mea akā ʻaʻole i kaupalena ʻia i kēia mau mea:
-He mau mea bipolar nā Triodes no ka mea ʻo nā mea lawe hapa nui a me nā mea lawe liʻiliʻi e komo i ka hoʻoili ʻana i ka manawa like; ʻoiai ʻo MOS wale nō ke alakaʻi i ka uila ma o nā mea lawe hapa nui i nā semiconductors, a ua kapa ʻia hoʻi he transistor unipolar.
-ʻO nā Triodes he mau mea hana i kāohi ʻia e ke au me ka hoʻohana ʻana i ka mana kiʻekiʻe; ʻoiai ʻo nā MOSFET he mau mea hana i kāohi ʻia e ke au me ka hoʻohana ʻana i ka mana haʻahaʻa.
-He nui ke kū'ē'ē o nā Triodes, aʻo nā paipu MOS he liʻiliʻi ke kū'ē'ē o lākou, he mau haneli milliohms wale nō. I nā mea uila o kēia wā, hoʻohana pinepine ʻia nā paipu MOS ma ke ʻano he kuapo, ʻoiai ke kiʻekiʻe o ka pono o MOS i hoʻohālikelike ʻia me nā triodes.
-He kūpono ke kumukūʻai o nā Triodes, a he pipiʻi ke kumukūʻai o nā paipu MOS.
-I kēia mau lā, hoʻohana ʻia nā paipu MOS e pani i nā triodes i ka hapa nui o nā hiʻohiʻona. I kekahi mau hiʻohiʻona mana haʻahaʻa a i ʻole nā hiʻohiʻona mana ʻole, e hoʻohana mākou i nā triodes e noʻonoʻo ana i ka pono o ke kumukūʻai.
3. CMOS
ʻO ka Semiconductor Metal Oxide Hoʻohui: Hoʻohana ka ʻenehana CMOS i nā transistors semiconductor metal oxide p-type a me n-type (MOSFET) hoʻohui e kūkulu i nā mea uila a me nā kaapuni logic. Hōʻike ke kiʻi ma lalo nei i kahi inverter CMOS maʻamau, i hoʻohana ʻia no ka hoʻololi "1→0" a i ʻole "0→1".
ʻO ke kiʻi ma lalo nei he ʻāpana CMOS maʻamau. ʻO ka ʻaoʻao hema ʻo NMS, a ʻo ka ʻaoʻao ʻākau ʻo PMOS. Hoʻopili ʻia nā pou G o nā MOS ʻelua ma ke ʻano he komo puka maʻamau, a hoʻopili ʻia nā pou D ma ke ʻano he puka hoʻopuka kahe maʻamau. Hoʻopili ʻia ʻo VDD i ke kumu o PMOS, a hoʻopili ʻia ʻo VSS i ke kumu o NMOS.
I ka makahiki 1963, ua hana ʻo Wanlass lāua ʻo Sah o Fairchild Semiconductor i ke kaapuni CMOS. I ka makahiki 1968, ua hoʻomohala ka American Radio Corporation (RCA) i ka huahana kaapuni hoʻohui CMOS mua, a mai ia manawa, ua hoʻokō ka kaapuni CMOS i ka hoʻomohala nui. ʻO kona mau pono he haʻahaʻa ka hoʻohana ʻana i ka mana a me ka hoʻohui kiʻekiʻe (hiki i ke kaʻina hana STI/LOCOS ke hoʻomaikaʻi hou aku i ka hoʻohui ʻana); ʻo kona hemahema ka loaʻa ʻana o kahi hopena laka (hoʻohana ʻia ka PN junction reverse bias ma ke ʻano he hoʻokaʻawale ma waena o nā paipu MOS, a hiki i ka hoʻopilikia ke hana maʻalahi i kahi loop i hoʻonui ʻia a puhi i ke kaapuni).
4. DMOS
ʻO ka Semiconductor Metal Oxide Diffused Pālua: E like me ke ʻano o nā mea MOSFET maʻamau, loaʻa iā ia ke kumu, ka ʻauwai, ka puka a me nā electrodes ʻē aʻe, akā kiʻekiʻe ke volta breakdown o ka hopena drain. Hoʻohana ʻia ke kaʻina hana diffusion pālua.
Hōʻike ke kiʻi ma lalo nei i ka ʻāpana kea o kahi DMOS N-channel maʻamau. Hoʻohana pinepine ʻia kēia ʻano mea hana DMOS i nā noi hoʻololi ʻaoʻao haʻahaʻa, kahi i hoʻopili ʻia ai ke kumu o ka MOSFET i ka honua. Eia kekahi, aia kahi DMOS P-channel. Hoʻohana pinepine ʻia kēia ʻano mea hana DMOS i nā noi hoʻololi ʻaoʻao kiʻekiʻe, kahi i hoʻopili ʻia ai ke kumu o ka MOSFET i kahi voltage maikaʻi. E like me CMOS, hoʻohana nā mea hana DMOS hoʻopihapiha i nā MOSFET N-channel a me P-channel ma ka chip like e hāʻawi i nā hana hoʻololi hoʻopihapiha.
Ma muli o ke kuhikuhi o ke kahawai, hiki ke hoʻokaʻawale ʻia ʻo DMOS i ʻelua ʻano, ʻo ia hoʻi ka vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) a me ka lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET).
Ua hoʻolālā ʻia nā polokalamu VDMOS me kahi kahawai kū pololei. Ke hoʻohālikelike ʻia me nā polokalamu DMOS ʻaoʻao, ʻoi aku ka kiʻekiʻe o ko lākou volta breakdown a me nā hiki ke lawelawe i ke au, akā nui nō naʻe ke kū'ē ʻana.
Ua hoʻolālā ʻia nā mea hana LDMOS me kahi kahawai ʻaoʻao a he mau mea hana MOSFET mana asymmetric. Ke hoʻohālikelike ʻia me nā mea hana DMOS kū pololei, ʻae lākou i ka pale kū'ē haʻahaʻa a me nā wikiwiki hoʻololi wikiwiki.
Ke hoʻohālikelike ʻia me nā MOSFET kuʻuna, ʻoi aku ka kiʻekiʻe o ka on-capacitance o DMOS a me ka haʻahaʻa o ke kū'ē ʻana, no laila ua hoʻohana nui ʻia ia i nā mea uila kiʻekiʻe e like me nā kuapo mana, nā mea hana mana a me nā hoʻokele kaʻa uila.
5. BiCMOS
ʻO Bipolar CMOS kahi ʻenehana e hoʻohui i nā mea CMOS a me nā mea bipolar ma ka chip like i ka manawa like. ʻO kona manaʻo nui ka hoʻohana ʻana i nā mea CMOS ma ke ʻano he kaapuni ʻāpana nui, a hoʻohui i nā mea bipolar a i ʻole nā kaapuni kahi e pono ai ke hoʻokele ʻia nā ukana capacitive nui. No laila, loaʻa i nā kaapuni BiCMOS nā pono o ka hoʻohui kiʻekiʻe a me ka hoʻohana ʻana i ka mana haʻahaʻa o nā kaapuni CMOS, a me nā pono o ka wikiwiki kiʻekiʻe a me nā hiki ke hoʻokele ikaika o ke au o nā kaapuni BJT.
Hoʻohui ka ʻenehana BiCMOS SiGe (silicon germanium) a STMicroelectronics i nā ʻāpana RF, analog a me nā ʻāpana kikohoʻe ma kahi chip hoʻokahi, hiki ke hōʻemi nui i ka helu o nā ʻāpana o waho a hoʻonui i ka hoʻohana ʻana i ka mana.
6. BCD
ʻO Bipolar-CMOS-DMOS, hiki i kēia ʻenehana ke hana i nā mea bipolar, CMOS a me DMOS ma ka chip like, i kapa ʻia ʻo BCD process, kahi i hoʻomohala mua ʻia e STMicroelectronics (ST) i ka makahiki 1986.
He kūpono ʻo Bipolar no nā kaapuni analog, kūpono ʻo CMOS no nā kaapuni kikohoʻe a me nā kaapuni logic, a kūpono ʻo DMOS no nā mana a me nā mea uila kiʻekiʻe. Hoʻohui ʻo BCD i nā pono o nā mea ʻekolu. Ma hope o ka hoʻomaikaʻi mau ʻana, hoʻohana nui ʻia ʻo BCD i nā huahana ma nā kahua o ka hoʻokele mana, ka loaʻa ʻana o ka ʻikepili analog a me nā mea hoʻoikaika mana. Wahi a ka pūnaewele kūhelu o ST, ʻo ke kaʻina hana makua no BCD aia nō ma kahi o 100nm, aia nō ʻo 90nm i ka hoʻolālā prototype, a no kāna mau huahana hanauna e hiki mai ana ka ʻenehana 40nmBCD.
Ka manawa hoʻouna: Sep-10-2024