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Yayin da hanyoyin kera na'urorin semiconductor ke ci gaba da samun ci gaba, wata sanarwa mai suna "Dokar Moore" ta yaɗu a masana'antar. Gordon Moore, ɗaya daga cikin waɗanda suka kafa Intel, ne ya gabatar da ita a shekarar 1965. Babban abin da ke cikinta shine: adadin transistors da za a iya ɗauka a kan da'irar da aka haɗa zai ninka kusan kowane watanni 18 zuwa 24. Wannan doka ba wai kawai nazari ne da hasashe game da yanayin ci gaban masana'antar ba, har ma da ƙarfin da ke motsa haɓaka hanyoyin kera semiconductor - komai yana nufin yin transistors masu ƙaramin girma da aiki mai karko. Daga shekarun 1950 zuwa yanzu, kimanin shekaru 70, an haɓaka jimillar fasahar BJT, MOSFET, CMOS, DMOS, da fasahar aiwatar da BiCMOS da BCD masu haɗaka.
1. BJT
Transistor na junction na bipolar (BJT), wanda aka fi sani da triode. Gudun caji a cikin transistor ya samo asali ne daga yaɗuwa da motsi na masu ɗaukar kaya a mahadar PN. Tunda yana ɗauke da kwararar electrons da ramuka, ana kiransa na'urar bipolar.
Idan aka waiwayi tarihin haihuwarsa. Saboda ra'ayin maye gurbin triodes na injinan iska da amplifiers masu ƙarfi, Shockley ya ba da shawarar gudanar da bincike na asali kan na'urorin semiconductor a lokacin bazara na 1945. A rabin na biyu na 1945, Bell Labs ta kafa ƙungiyar bincike ta kimiyyar lissafi mai ƙarfi wacce Shockley ke jagoranta. A cikin wannan rukunin, ba wai kawai masana kimiyyar lissafi ba ne, har ma da injiniyoyin da'ira da masana kimiyyar sinadarai, ciki har da Bardeen, masanin kimiyyar lissafi na ka'ida, da Brattain, masanin kimiyyar lissafi na gwaji. A watan Disamba na 1947, wani lamari da aka ɗauka a matsayin wani muhimmin ci gaba a cikin tsararraki masu zuwa ya faru cikin nasara - Bardeen da Brattain sun yi nasarar ƙirƙirar transistor na germanium na farko a duniya tare da haɓaka ƙarfin lantarki na yanzu.
Transistor na farko na Bardeen da Brattain
Ba da daɗewa ba bayan haka, Shockley ya ƙirƙiro transistor na bipolar junction a shekarar 1948. Ya gabatar da cewa transistor ɗin zai iya ƙunsar mahadar pn guda biyu, ɗaya mai son gaba ɗaya ɗayan kuma mai son baya, kuma ya sami takardar izinin mallaka a watan Yunin 1948. A shekarar 1949, ya buga cikakken ka'idar aikin transistor na junction. Fiye da shekaru biyu bayan haka, masana kimiyya da injiniyoyi a Bell Labs sun ƙirƙiro wani tsari don cimma yawan samar da transistor na junction (maki a 1951), wanda ya buɗe sabon zamani na fasahar lantarki. Don girmama gudummawar da suka bayar ga ƙirƙirar transistor, Shockley, Bardeen da Brattain sun lashe kyautar Nobel ta 1956 a fannin kimiyyar lissafi.
Tsarin tsari mai sauƙi na transistor na NPN bipolar junction transistor
Dangane da tsarin transistor na bipolar, BJTs na gama gari sune NPN da PNP. Tsarin ciki dalla-dalla an nuna shi a cikin hoton da ke ƙasa. Yankin semiconductor mara tsarki wanda ya dace da emitter shine yankin emitter, wanda ke da yawan doping; yankin semiconductor mara tsarki wanda ya dace da tushe shine yankin tushe, wanda ke da faɗi mai siriri da ƙarancin yawan doping; yankin semiconductor mara tsarki wanda ya dace da mai tattarawa shine yankin mai tattarawa, wanda ke da babban yanki da ƙarancin yawan doping.
Fa'idodin fasahar BJT sune babban saurin amsawa, babban transconductance (canje-canjen ƙarfin lantarki na shigarwa sun yi daidai da manyan canje-canjen wutar lantarki na fitarwa), ƙarancin hayaniya, babban daidaiton analog, da ƙarfin tuƙi mai ƙarfi na wutar lantarki; rashin amfanin su ne ƙarancin haɗin kai (zurfin tsaye ba za a iya rage shi da girman gefe ba) da kuma yawan amfani da wutar lantarki.
2. MOS
Transistor na Tasirin Filin Karfe na Oxide (FET na Semiconductor na Metal Oxide), wato, transistor na tasirin fili wanda ke sarrafa canjin tashar mai sarrafawa ta semiconductor (S) ta hanyar amfani da ƙarfin lantarki zuwa ƙofar layin ƙarfe (M-metal aluminum) da kuma tushen ta hanyar layin oxide (O-insulating Layer SiO2) don samar da tasirin filin lantarki. Tunda an ware ƙofar da tushen, da ƙofar da magudanar ruwa ta hanyar layin mai hana SiO2, ana kuma kiran MOSFET transistor na tasirin filin ƙofar da aka rufe. A shekarar 1962, Bell Labs ta sanar da nasarar ci gaba a hukumance, wanda ya zama ɗaya daga cikin muhimman abubuwan da suka faru a tarihin ci gaban semiconductor kuma ya kafa harsashin fasaha kai tsaye don zuwan ƙwaƙwalwar semiconductor.
Ana iya raba MOSFET zuwa tashar P da tashar N bisa ga nau'in tashar mai sarrafawa. Dangane da girman ƙarfin wutar lantarki na ƙofar, ana iya raba shi zuwa: nau'in raguwa - lokacin da ƙarfin wutar lantarki na ƙofar sifili ne, akwai tashar mai sarrafawa tsakanin magudanar ruwa da tushen; nau'in haɓakawa - don na'urorin tashar N (P), akwai tashar mai sarrafawa kawai lokacin da ƙarfin wutar lantarki na ƙofar ya fi (ƙasa da) sifili, kuma wutar lantarki MOSFET galibi nau'in haɓaka tashar N ne.
Babban bambance-bambance tsakanin MOS da triode sun haɗa da amma ba'a iyakance ga waɗannan ba:
-Triodes na'urori ne na bipolar saboda masu ɗaukar wutar lantarki na mafi rinjaye da marasa rinjaye suna shiga cikin watsa wutar lantarki a lokaci guda; yayin da MOS ke gudanar da wutar lantarki ta hanyar masu ɗaukar wutar lantarki na mafi rinjaye a cikin semiconductors kawai, kuma ana kiransa transistor unipolar.
-Triodes na'urori ne da ake sarrafa su ta hanyar amfani da wutar lantarki mai yawa; yayin da MOSFETs na'urori ne da ake sarrafa su ta hanyar amfani da wutar lantarki mai ƙarancin amfani da wutar lantarki.
-Triodes suna da babban juriya a kan-kan-kan, yayin da bututun MOS suna da ƙananan juriya a kan-kan-kan, 'yan ɗaruruwan milliohms kawai. A cikin na'urorin lantarki na yanzu, galibi ana amfani da bututun MOS azaman maɓalli, galibi saboda ingancin MOS yana da girma idan aka kwatanta da triodes.
-Triodes suna da farashi mai kyau, kuma bututun MOS suna da tsada sosai.
- A zamanin yau, ana amfani da bututun MOS don maye gurbin triodes a mafi yawan yanayi. Sai kawai a wasu yanayi masu ƙarancin ƙarfi ko marasa ƙarfi, za mu yi amfani da triodes idan aka yi la'akari da fa'idar farashi.
3. CMOS
Semiconductor na Karfe Mai Kari: Fasahar CMOS tana amfani da transistors na semiconductor na ƙarfe mai nau'in p da n-type (MOSFETs) don gina na'urorin lantarki da da'irorin dabaru. Hoto mai zuwa yana nuna inverter na CMOS gama gari, wanda ake amfani da shi don canza "1→0" ko "0→1".
Wannan adadi mai zuwa sashe ne na CMOS na yau da kullun. Gefen hagu shine NMS, gefen dama kuma shine PMOS. An haɗa sandunan G na MOS guda biyu a matsayin shigarwar ƙofa ta gama gari, kuma an haɗa sandunan D tare a matsayin fitarwa ta magudanar ruwa ta gama gari. An haɗa VDD da tushen PMOS, kuma an haɗa VSS da tushen NMOS.
A shekarar 1963, Wanlass da Sah na Fairchild Semiconductor sun ƙirƙiro da'irar CMOS. A shekarar 1968, Kamfanin Rediyon Amurka (RCA) ya ƙirƙiro samfurin da'irar CMOS na farko, kuma tun daga lokacin, da'irar CMOS ta sami babban ci gaba. Fa'idodinta sune ƙarancin amfani da wutar lantarki da haɗin kai mai yawa (tsarin STI/LOCOS na iya ƙara inganta haɗin kai); rashin amfanin sa shine kasancewar tasirin kullewa (ana amfani da PN junction reverse bias a matsayin keɓewa tsakanin bututun MOS, kuma tsangwama na iya samar da ingantaccen madauki kuma ya ƙone da'irar cikin sauƙi).
4. DMOS
Semiconductor na ƙarfe mai rarrabawa sau biyu: Kamar tsarin na'urorin MOSFET na yau da kullun, yana kuma da tushen wuta, magudanar ruwa, ƙofa da sauran lantarki, amma ƙarfin wutar lantarki na ƙarshen magudanar ruwa yana da yawa. Ana amfani da tsarin yaɗawa sau biyu.
Hoton da ke ƙasa yana nuna ɓangaren giciye na daidaitaccen DMOS na tashar N. Wannan nau'in na'urar DMOS yawanci ana amfani da shi a aikace-aikacen sauyawa na ƙasa, inda tushen MOSFET ya haɗu da ƙasa. Bugu da ƙari, akwai DMOS na tashar P. Wannan nau'in na'urar DMOS yawanci ana amfani da shi a aikace-aikacen sauyawa na gefe mai tsayi, inda tushen MOSFET ya haɗu da ƙarfin lantarki mai kyau. Kamar CMOS, na'urorin DMOS masu jituwa suna amfani da N-channel da P-channel MOSFETs akan guntu ɗaya don samar da ayyukan sauyawa masu dacewa.
Dangane da alkiblar tashar, ana iya raba DMOS zuwa nau'i biyu, wato transistor mai nuna tasirin filin ƙarfe mai haske biyu VDMOS (Vertical Double-Diffused MOSFET) da kuma transistor mai nuna tasirin filin ƙarfe mai haske biyu LDMOS (Lateral Double-Diffused MOSFET).
An tsara na'urorin VDMOS da tashar tsaye. Idan aka kwatanta da na'urorin DMOS na gefe, suna da ƙarfin wutar lantarki mafi girma da ƙarfin sarrafa wutar lantarki, amma juriyar kan-kan-kan har yanzu tana da girma.
An tsara na'urorin LDMOS da tashar gefe kuma na'urorin MOSFET ne marasa daidaituwa. Idan aka kwatanta da na'urorin DMOS na tsaye, suna ba da damar ƙarancin juriya akan-kan-kan da kuma saurin sauyawa cikin sauri.
Idan aka kwatanta da MOSFETs na gargajiya, DMOS yana da ƙarfin kunnawa mafi girma da ƙarancin juriya, don haka ana amfani da shi sosai a cikin na'urorin lantarki masu ƙarfi kamar maɓallan wutar lantarki, kayan aikin wutar lantarki da tuƙi na ababen hawa na lantarki.
5. BiCMOS
CMOS mai bipolar fasaha ce da ke haɗa na'urorin CMOS da bipolar a kan guntu ɗaya a lokaci guda. Manufarta ta asali ita ce amfani da na'urorin CMOS a matsayin babban da'irar naúrar, da kuma ƙara na'urori masu bipolar ko da'irori inda ake buƙatar manyan lodin capacitive don tuƙawa. Saboda haka, da'irori na BiCMOS suna da fa'idodin haɗakarwa mai yawa da ƙarancin amfani da wutar lantarki na da'irori na CMOS, da kuma fa'idodin ƙarfin tuƙi mai girma da ƙarfi na da'irori na BJT.
Fasahar BiCMOS SiGe (silicon germanium) ta STMicroelectronics ta haɗa sassan RF, analog da dijital a kan guntu ɗaya, wanda zai iya rage yawan abubuwan da ke waje sosai da kuma inganta amfani da wutar lantarki.
6. BCD
Wannan fasaha ta Bipolar-CMOS-DMOS, tana iya samar da na'urorin bipolar, CMOS da DMOS a kan guntu ɗaya, wanda ake kira BCD process, wanda STMicroelectronics (ST) ta fara haɓaka cikin nasara a shekarar 1986.
Bipolar ya dace da da'irori na analog, CMOS ya dace da da'irori na dijital da dabaru, kuma DMOS ya dace da na'urorin wutar lantarki da ƙarfin lantarki mai yawa. BCD ya haɗa fa'idodin ukun. Bayan ci gaba da haɓakawa, ana amfani da BCD sosai a cikin samfura a fannoni na sarrafa wutar lantarki, tattara bayanai na analog da masu kunna wutar lantarki. A cewar gidan yanar gizon hukuma na ST, tsarin girma na BCD har yanzu yana kusa da 100nm, 90nm har yanzu yana cikin ƙirar samfuri, kuma fasahar 40nmBCD ta kasance ta samfuran ƙarni na gaba da ake haɓakawa.
Lokacin Saƙo: Satumba-10-2024