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Pamene njira zopangira ma semiconductor zikupitilira kupita patsogolo, mawu otchuka otchedwa "Moore's Law" akhala akufalikira mumakampaniwa. Adaperekedwa ndi Gordon Moore, m'modzi mwa omwe adayambitsa Intel, mu 1965. Zomwe zili mkati mwake ndi izi: chiwerengero cha ma transistors omwe angagwiritsidwe ntchito pa circuit yolumikizidwa chidzawirikiza kawiri pafupifupi miyezi 18 mpaka 24 iliyonse. Lamuloli silikungofufuza ndi kulosera za chitukuko cha makampaniwa, komanso mphamvu yoyendetsera chitukuko cha njira zopangira ma semiconductor - chilichonse ndi kupanga ma transistors okhala ndi kukula kochepa komanso magwiridwe antchito okhazikika. Kuyambira m'ma 1950 mpaka pano, pafupifupi zaka 70, ukadaulo wonse wa BJT, MOSFET, CMOS, DMOS, ndi hybrid BiCMOS ndi BCD process wapangidwa.
1. BJT
Transistor ya Bipolar junction (BJT), yomwe imadziwika kuti triode. Kuyenda kwa mphamvu mu transistor kumachitika makamaka chifukwa cha kufalikira ndi kuyenda kwa zonyamulira pa PN junction. Popeza imakhudza kuyenda kwa ma elekitironi ndi mabowo, imatchedwa chipangizo cha bipolar.
Poganizira mbiri ya kubadwa kwake. Chifukwa cha lingaliro losintha ma vacuum triode ndi ma amplifiers olimba, Shockley adaganiza zochita kafukufuku woyambira pa ma semiconductors m'chilimwe cha 1945. Mu theka lachiwiri la 1945, Bell Labs idakhazikitsa gulu lofufuza za fizikisi yolimba lomwe limatsogozedwa ndi Shockley. Mu gululi, sikuti akatswiri a fizikisi okha, komanso mainjiniya a circuit ndi akatswiri a mankhwala, kuphatikiza Bardeen, katswiri wa fizikisi ya theoretical, ndi Brattain, katswiri wa fizikisi yoyesera. Mu Disembala 1947, chochitika chomwe chinkaonedwa ngati chochitika chachikulu ndi mibadwo yotsatira chinachitika bwino kwambiri - Bardeen ndi Brattain adapanga bwino transistor yoyamba padziko lonse lapansi ya germanium point-contact transistor yokhala ndi current amplification.
Transistor yoyamba ya Bardeen ndi Brattain yolumikizana ndi mfundo
Patapita nthawi yochepa, Shockley anayambitsa transistor ya bipolar junction mu 1948. Ananena kuti transistor ikhoza kupangidwa ndi ma pn junctions awiri, imodzi yolunjika kutsogolo ndi ina yopingasa, ndipo adapeza patent mu June 1948. Mu 1949, adasindikiza chiphunzitso chatsatanetsatane cha momwe transistor ya junction imagwirira ntchito. Patatha zaka zoposa ziwiri, asayansi ndi mainjiniya ku Bell Labs adapanga njira yopezera ma transistors ambiri (mwambo wofunika kwambiri mu 1951), ndikutsegula nthawi yatsopano yaukadaulo wamagetsi. Pozindikira zopereka zawo pakupanga ma transistors, Shockley, Bardeen ndi Brattain adapambana limodzi Mphoto ya Nobel mu Fizikisi mu 1956.
Chithunzi chosavuta cha kapangidwe ka transistor ya NPN bipolar junction
Ponena za kapangidwe ka ma transistors a bipolar junction, ma BJT wamba ndi NPN ndi PNP. Kapangidwe ka mkati kameneka kakuwonetsedwa pachithunzi chili pansipa. Dera la semiconductor yodetsedwa yofanana ndi emitter ndi dera la emitter, lomwe lili ndi kuchuluka kwa doping; dera la semiconductor yodetsedwa yofanana ndi maziko ndi dera loyambira, lomwe lili ndi m'lifupi woonda kwambiri komanso kuchuluka kwa doping kochepa kwambiri; dera la semiconductor yodetsedwa yofanana ndi wosonkhanitsa ndi dera la osonkhanitsa, lomwe lili ndi malo akuluakulu komanso kuchuluka kwa doping kochepa kwambiri.
Ubwino wa ukadaulo wa BJT ndi liwiro loyankha kwambiri, transconductance yayikulu (kusintha kwa magetsi olowera kumayenderana ndi kusintha kwakukulu kwa mphamvu yotulutsa), phokoso lochepa, kulondola kwakukulu kwa analog, komanso kuthekera koyendetsa mphamvu yamphamvu; zovuta zake ndi kuphatikiza kochepa (kuya koyima sikungachepe ndi kukula kwa mbali) komanso kugwiritsa ntchito mphamvu zambiri.
2. MOS
Chida chosinthira magetsi cha Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), ndiko kuti, chosinthira magetsi chomwe chimalamulira kusintha kwa njira yoyendetsera magetsi ya semiconductor (S) poika magetsi pachipata cha chitsulo (M-metal aluminiyamu) ndi gwero kudzera mu oxide layer (O-insulating layer SiO2) kuti apange mphamvu ya magetsi. Popeza chipata ndi gwero, ndi chipata ndi drain zimalekanitsidwa ndi SiO2 insulating layer, MOSFET imatchedwanso insulated gate field effect transistor. Mu 1962, Bell Labs idalengeza mwalamulo chitukuko chopambana, chomwe chidakhala chimodzi mwa zinthu zofunika kwambiri m'mbiri ya chitukuko cha semiconductor ndipo idakhazikitsa mwachindunji maziko aukadaulo a kubwera kwa kukumbukira kwa semiconductor.
MOSFET ikhoza kugawidwa m'magawo a P channel ndi N channel malinga ndi mtundu wa conductive channel. Malinga ndi kuchuluka kwa gate voltage, ikhoza kugawidwa m'magulu awa: mtundu wa depletion - pamene gate voltage ili zero, pali conductive channel pakati pa drain ndi source; mtundu wa enhancement - wa N (P) channel devices, pali conductive channel pokhapokha ngati gate voltage ili yayikulu kuposa (yochepera) zero, ndipo mphamvu MOSFET makamaka ndi N channel enhancement type.
Kusiyana kwakukulu pakati pa MOS ndi triode kumaphatikizapo koma sikungokhala pa mfundo zotsatirazi:
-Ma triode ndi zida zosinthasintha chifukwa zonyamulira zamagetsi zambiri komanso zazing'ono zimatenga nawo mbali mu conduction nthawi imodzi; pomwe MOS imangoyendetsa magetsi kudzera mu zonyamulira zamagetsi zambiri mu semiconductors, ndipo imatchedwanso unipolar transistor.
-Ma triode ndi zida zoyendetsedwa ndi magetsi zomwe zimagwiritsa ntchito mphamvu zambiri; pomwe ma MOSFET ndi zida zoyendetsedwa ndi magetsi zomwe zimagwiritsa ntchito mphamvu zochepa.
-Ma triode ali ndi mphamvu yayikulu yolimbana ndi mafunde, pomwe machubu a MOS ali ndi mphamvu yaying'ono yolimbana ndi mafunde, ma milliohm mazana ochepa okha. Mu zida zamagetsi zomwe zilipo, machubu a MOS nthawi zambiri amagwiritsidwa ntchito ngati ma switch, makamaka chifukwa mphamvu ya MOS ndi yayikulu poyerekeza ndi ma triode.
-Ma triode ali ndi mtengo wabwino, ndipo machubu a MOS ndi okwera mtengo.
-Masiku ano, machubu a MOS amagwiritsidwa ntchito m'malo mwa ma triode m'zochitika zambiri. Pokhapokha ngati pali mphamvu zochepa kapena mphamvu zochepa, tidzagwiritsa ntchito ma triode poganizira ubwino wa mtengo.
3. CMOS
Chowonjezera cha Metal Oxide Semiconductor: Ukadaulo wa CMOS umagwiritsa ntchito ma transistors a p-type ndi n-type metal oxide semiconductor (MOSFETs) ophatikizana popanga zipangizo zamagetsi ndi ma logic circuits. Chithunzi chotsatirachi chikuwonetsa inverter yodziwika bwino ya CMOS, yomwe imagwiritsidwa ntchito potembenuza "1→0" kapena "0→1".
Chithunzi chotsatirachi ndi gawo la CMOS lodziwika bwino. Mbali yakumanzere ndi NMS, ndipo mbali yakumanja ndi PMOS. Mizati ya G ya MOS ziwirizi imalumikizidwa pamodzi ngati cholowera cha chipata chodziwika bwino, ndipo mizati ya D imalumikizidwa pamodzi ngati chotulutsira madzi chodziwika bwino. VDD imalumikizidwa ku gwero la PMOS, ndipo VSS imalumikizidwa ku gwero la NMOS.
Mu 1963, Wanlass ndi Sah a Fairchild Semiconductor adapanga dera la CMOS. Mu 1968, American Radio Corporation (RCA) idapanga chinthu choyamba cha CMOS integrated circuit, ndipo kuyambira pamenepo, dera la CMOS lakhala likukula kwambiri. Ubwino wake ndi kugwiritsa ntchito mphamvu zochepa komanso kuphatikiza kwakukulu (njira ya STI/LOCOS ikhoza kupititsa patsogolo kuphatikizana); vuto lake ndi kukhalapo kwa lock effect (PN junction reverse bias imagwiritsidwa ntchito ngati kudzipatula pakati pa machubu a MOS, ndipo kusokoneza kumatha kupanga loop yowonjezera ndikuwotcha dera).
4. DMOS
Semiconductor ya Chitsulo Chogawanika Kawiri: Mofanana ndi kapangidwe ka zipangizo wamba za MOSFET, ilinso ndi ma source, drain, gate ndi ma electrode ena, koma mphamvu ya magetsi yophwanyika ya drain ndi yokwera. Njira yogawa kawiri imagwiritsidwa ntchito.
Chithunzi chomwe chili pansipa chikuwonetsa gawo lopingasa la DMOS yokhazikika ya N-channel. Mtundu uwu wa chipangizo cha DMOS nthawi zambiri umagwiritsidwa ntchito mu mapulogalamu osinthira otsika, komwe gwero la MOSFET limalumikizidwa pansi. Kuphatikiza apo, pali DMOS ya P-channel. Mtundu uwu wa chipangizo cha DMOS nthawi zambiri umagwiritsidwa ntchito mu mapulogalamu osinthira apamwamba, komwe gwero la MOSFET limalumikizidwa ndi voltage yabwino. Mofanana ndi CMOS, zida zowonjezera za DMOS zimagwiritsa ntchito ma N-channel ndi ma P-channel MOSFET pa chip chomwecho kuti apereke ntchito zowonjezera zosinthira.
Kutengera ndi komwe njirayo ikupita, DMOS ikhoza kugawidwa m'mitundu iwiri, yomwe ndi vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) ndi lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET).
Zipangizo za VDMOS zimapangidwa ndi njira yoyimirira. Poyerekeza ndi zipangizo za DMOS za m'mbali, zimakhala ndi mphamvu zambiri zowononga magetsi komanso mphamvu zogwirira ntchito yamagetsi, koma mphamvu yozimitsira magetsi ikadali yayikulu.
Zipangizo za LDMOS zimapangidwa ndi njira yolumikizira mbali ndipo ndi zipangizo za MOSFET zamphamvu zosafanana. Poyerekeza ndi zipangizo za DMOS zoyima, zimalola kuti magetsi azigwira ntchito molimbika komanso kuti azisinthasintha mofulumira.
Poyerekeza ndi ma MOSFET achikhalidwe, ma DMOS ali ndi mphamvu zambiri komanso kukana kochepa, kotero amagwiritsidwa ntchito kwambiri pazida zamagetsi zamagetsi monga ma switch amagetsi, zida zamagetsi ndi ma drive amagetsi.
5. BiCMOS
Bipolar CMOS ndi ukadaulo womwe umaphatikiza CMOS ndi zida zosinthasintha pa chip imodzi nthawi imodzi. Lingaliro lake lalikulu ndikugwiritsa ntchito zida za CMOS ngati gawo lalikulu la unit circuit, ndikuwonjezera zida zosinthasintha kapena ma circuit komwe katundu wamkulu wa capacitive amafunika kuyendetsedwa. Chifukwa chake, ma circuit a BiCMOS ali ndi ubwino wophatikizana kwambiri komanso kugwiritsa ntchito mphamvu zochepa kwa ma circuit a CMOS, komanso ubwino wa kuthamanga kwambiri komanso mphamvu yamphamvu yoyendetsera ma circuit a BJT.
Ukadaulo wa STMicroelectronics wa BiCMOS SiGe (silicon germanium) umaphatikiza RF, analog ndi zida za digito pa chip imodzi, zomwe zingachepetse kwambiri kuchuluka kwa zida zakunja ndikuwonjezera kugwiritsa ntchito mphamvu.
6. BCD
Ukadaulo uwu, womwe umagwiritsidwa ntchito ndi Bipolar-CMOS-DMOS, ukhoza kupanga zida za bipolar, CMOS ndi DMOS pa chip imodzi, yotchedwa BCD process, yomwe idapangidwa koyamba bwino ndi STMicroelectronics (ST) mu 1986.
Bipolar ndi yoyenera ma analog circuits, CMOS ndi yoyenera ma digital ndi logic circuits, ndipo DMOS ndi yoyenera zida zamagetsi ndi zamagetsi amphamvu. BCD imaphatikiza zabwino za zitatuzi. Pambuyo popitilizabe kusintha, BCD imagwiritsidwa ntchito kwambiri pazinthu zokhudzana ndi kasamalidwe ka mphamvu, kupeza deta ya analog ndi ma actuator amagetsi. Malinga ndi tsamba lovomerezeka la ST, njira yokhwima ya BCD ikadali pafupifupi 100nm, 90nm ikadali mu kapangidwe ka prototype, ndipo ukadaulo wa 40nmBCD ndi wazinthu zake zam'badwo wotsatira zomwe zikupangidwa.
Nthawi yotumizira: Sep-10-2024