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Sezvo maitiro ekugadzira ma semiconductor achiramba achiwedzera kubudirira, chirevo chakakurumbira chinonzi "Moore's Law" chave chichipararira muindasitiri iyi. Chakapihwa naGordon Moore, mumwe wevakatanga Intel, muna 1965. Zviri mukati mayo ndeizvi: huwandu hwema transistors anogona kuiswa pa integrated circuit huchapetwa kaviri mwedzi wega wega we18 kusvika 24. Mutemo uyu hausi kungoongorora nekufanotaura kwemafambiro ekukura kweindasitiri iyi, asiwo simba rekusimudzira maitiro ekugadzira ma semiconductor - zvese ndezvekugadzira ma transistors ane saizi diki uye mashandiro akagadzikana. Kubva kuma1950 kusvika pari zvino, makore angangoita makumi manomwe, matekinoroji ese eBJT, MOSFET, CMOS, DMOS, uye hybrid BiCMOS neBCD process akagadziriswa.
1. BJT
Bipolar junction transistor (BJT), inozivikanwa se triode. Kuyerera kwechaji mu transistor kunonyanya kukonzerwa nekupararira uye kufamba kwevatakuri paPN junction. Sezvo ichisanganisira kufamba kwemaerekitironi nemaburi, inonzi bipolar device.
Tichitarisa nhoroondo yekuzvarwa kwayo. Nekuda kwepfungwa yekutsiva vacuum triodes nema solid amplifiers, Shockley akaronga kuita tsvakiridzo yekutanga pama semiconductors muzhizha ra1945. Muhafu yechipiri ya1945, Bell Labs yakagadzira boka rekutsvagisa fizikisi re solid-state rinotungamirwa naShockley. Muboka iri, hamuna ma physicist chete, asiwo mainjiniya edunhu nemakemikari, kusanganisira Bardeen, nyanzvi yefizikisi yedzidziso, naBrattain, nyanzvi yefizikisi yekuedza. Muna Zvita 1947, chiitiko chakaonekwa sechiitiko chakakosha nezvizvarwa zvakazotevera chakaitika zvakanaka - Bardeen naBrattain vakabudirira kugadzira transistor yekutanga yepasi rose yegermanium point-contact ine current amplification.
Transistor yekutanga yeBardeen naBrattain yekubata-bata
Nguva pfupi yadarika, Shockley akagadzira transistor inonzi bipolar junction muna 1948. Akakurudzira kuti transistor iyi ive ne pn junctions mbiri, imwe iri forward bindependent uye imwe iri reverse bindependent, uye akawana patent muna Chikumi 1948. Muna 1949, akaburitsa dzidziso yakadzama yekushanda kwe junction transistor. Makore anopfuura maviri gare gare, masayendisiti nemainjiniya vekuBell Labs vakagadzira nzira yekuwana kugadzirwa kwakawanda kwe junction transistors (chiitiko chikuru muna 1951), vachivhura nguva itsva ye electronic tekinoroji. Mukucherechedza mipiro yavo mukugadzirwa kwe transistors, Shockley, Bardeen naBrattain vakahwina pamwe chete Nobel Prize muna 1956 muFizikisi.
Dhayagiramu iri nyore yekuvaka yeNPN bipolar junction transistor
Nezvemaumbirwo ematransistors ebipolar junction, maBJT akajairika ndiNPN nePNP. Maumbirwo emukati akadzama anoratidzwa mumufananidzo uri pazasi. Nzvimbo yesemiconductor yekusvibiswa inoenderana ne emitter inzvimbo ye emitter, ine huwandu hwakawanda hwedoping; nzvimbo yesemiconductor yekusvibiswa inoenderana nebase inzvimbo yebase, ine upamhi hwakatetepa uye huwandu hwakaderera hwedoping; nzvimbo yesemiconductor yekusvibiswa inoenderana ne collector inzvimbo ye collector, ine nzvimbo yakakura uye huwandu hwakaderera hwedoping.
Zvakanakira tekinoroji yeBJT inokurumidza kupindura, transconductance yakakwira (kuchinja kwemagetsi ekupinda kunoenderana nekuchinja kukuru kwemagetsi anobuda), ruzha rwakaderera, kurongeka kwakanyanya kweanalog, uye kugona kutyaira kwakasimba kwemagetsi; zvikanganiso ikubatanidzwa kwakaderera (kudzika kwakatwasuka hakugone kuderedzwa nehukuru hwepadivi) uye kushandiswa kwesimba kwakawanda.
2. MOS
Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), kureva kuti, field effect transistor inodzora switch ye semiconductor (S) conductive channel nekuisa voltage pagedhi resimbi layer (M-metal aluminium) uye panobva oxide layer (O-insulating layer SiO2) kuti ibudise simba remagetsi. Sezvo gedhi nekwakabva, uye gedhi nedhireni zvakaparadzaniswa neSiO2 insulating layer, MOSFET inonziwo insulated gate field effect transistor. Muna 1962, Bell Labs yakazivisa zviri pamutemo budiriro iyi, iyo yakava imwe yenhanho dzakakosha munhoroondo yekuvandudzwa kwe semiconductor uye yakaisa zvakananga hwaro hwehunyanzvi hwekuuya kwe memory ye semiconductor.
MOSFET inogona kukamurwa kuita P channel neN channel zvichienderana nerudzi rwe conductive channel. Zvichienderana ne amplitude yegate voltage, inogona kukamurwa kuita: depletion type-kana gate voltage iri zero, pane conductive channel pakati pe drain ne source; enhancement type-ye N (P) channel devices, pane conductive channel chete kana gate voltage iri huru pane (pasi pe) zero, uye simba MOSFET rinonyanya kuve N channel enhancement type.
Kusiyana kukuru pakati peMOS ne triode kunosanganisira asi hakugumiri pane zvinotevera:
-MaTriode zvishandiso zvebipolar nekuti zvese zvinotakura magetsi zveruzhinji nezvevashoma zvinotora chikamu mukufambiswa kwemagetsi panguva imwe chete; nepo MOS ichingofambisa magetsi kuburikidza nezvinotakura magetsi zveruzhinji muma semiconductors, uye inonziwo unipolar transistor.
-MaTriode zvishandiso zvinodzorwa nemagetsi zvinoshandisa simba rakawanda; nepo maMOSFET ari zvishandiso zvinodzorwa nemagetsi zvinoshandisa simba rakaderera.
-Matatu ane simba guru rekudzivirira kupisa, nepo machubhu eMOS ane simba diki rekudzivirira kupisa, mamiriyoni mashoma chete. Muzvishandiso zvemagetsi zviripo, machubhu eMOS anowanzo shandiswa semaswichi, kunyanya nekuti kushanda zvakanaka kweMOS kwakanyanya kana tichienzanisa nematatu.
-Matatu ane mutengo wakanakira, uye machubhu eMOS anodhura zvakanyanya.
-Mazuva ano, machubhu eMOS anoshandiswa kutsiva matriode muzviitiko zvakawanda. Muzviitiko zvine simba shoma kana kuti zvisinganyanyi kubatwa nemagetsi, tichashandisa matriode tichifunga nezvemutengo wazvo.
3. Makambani eCMOS
Semiconductor yeComplementary Metal Oxide: Tekinoroji yeCMOS inoshandisa transistors dzemhando yep-type nen-type metal oxide semiconductor (MOSFETs) dzinobatanidza kugadzira zvishandiso zvemagetsi nema logic circuits. Mufananidzo unotevera unoratidza inverter yeCMOS yakajairika, inoshandiswa pakushandura "1→0" kana "0→1".
Mufananidzo unotevera iCMOS cross-section yakajairika. Rutivi rweruboshwe iNMS, uye divi rekurudyi iPMOS. Matanda eG eMOS maviri akabatana pamwe chete senzira yekupinda yegedhi, uye matanda eD akabatana pamwe chete senzira yekubudisa mvura. VDD yakabatana nekwakabva PMOS, uye VSS yakabatana nekwakabva NMOS.
Muna 1963, Wanlass naSah veFairchild Semiconductor vakagadzira circuit yeCMOS. Muna 1968, American Radio Corporation (RCA) yakagadzira chigadzirwa chekutanga cheCMOS integrated circuit, uye kubvira ipapo, circuit yeCMOS yakawana budiriro huru. Zvakanakira zvayo kushandisa simba shoma uye kubatanidzwa kwakanyanya (STI/LOCOS process inogona kuwedzera kuvandudza kubatanidzwa); kushaya kwayo kuvepo kwemhedzisiro yekukiya (PN junction reverse bias inoshandiswa sekuparadzanisa pakati pemachubhu eMOS, uye kupindira kunogona kuumba nyore nyore loop yakawedzerwa uye kupisa circuit).
4. DMOS
Semiconductor yesimbi yakapararira kaviri: Kufanana nemaumbirwo emidziyo yakajairika yeMOSFET, inewo manyuko, drain, gedhi nemamwe maerekitirodhi, asi voltage yekupwanyika kwemugumo wedrain yakakwira. Maitiro ekupararira kaviri anoshandiswa.
Mufananidzo uri pazasi unoratidza chikamu cheN-channel DMOS yakajairika. Rudzi urwu rweDMOS mudziyo unowanzo shandiswa mumashandisirwo ekuchinja-chinja mativi mashoma, uko kwakabva MOSFET kwakabatana nepasi. Pamusoro pezvo, kune P-channel DMOS. Rudzi urwu rweDMOS mudziyo unowanzo shandiswa mumashandisirwo ekuchinja-chinja mativi makuru, uko kwakabva MOSFET kwakabatana nevoltage yakanaka. Kufanana neCMOS, zvishandiso zveDMOS zvinosanganisa zvinoshandisa N-channel neP-channel MOSFET pachip imwe chete kuti zvipe mabasa ekuchinja-chinja anoenderana.
Zvichienderana nekwakananga chiteshi, DMOS inogona kukamurwa kuita mhando mbiri, dzinoti vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) uye lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET).
Midziyo yeVDMOS yakagadzirwa nechiteshi chakamira. Kana tichienzanisa nemidziyo yeDMOS iri padivi, ine voltage yakakura yekupwanya magetsi uye kugona kubata magetsi, asi kudzivirira kupisa kuchiri kwakakura.
Midziyo yeLDMOS yakagadzirwa nechiteshi chemativi uye ine simba risingaenzaniswi reMOSFET. Kana ichienzaniswa nemidziyo yeDMOS yakamira, inobvumira kushanduka kwakaderera uye kumhanya kwekuchinja nekukurumidza.
Kana tichienzanisa neMOSFET dzechinyakare, DMOS ine simba rakawanda uye inodzivisa zvishoma, saka inoshandiswa zvakanyanya mumidziyo yemagetsi ine simba guru senge maswichi emagetsi, maturusi emagetsi uye madhiraivha emotokari emagetsi.
5. BiCMOS
Bipolar CMOS tekinoroji inobatanidza CMOS nemidziyo yebipolar pane chip imwe chete panguva imwe chete. Pfungwa yayo huru ndeyekushandisa michina yeCMOS sedunhu guru reyuniti, uye kuwedzera michina yebipolar kana circuits uko mitoro mikuru ye capacitive inodiwa kuti ifambiswe. Nokudaro, circuits dzeBiCMOS dzine zvakanakira zvekubatanidzwa kwakanyanya uye kushandiswa kwesimba shoma kwecircuits dzeCMOS, uye zvakanakira kugona kwekutyaira kweBJT circuits kumhanya kwakanyanya uye kwakasimba.
Tekinoroji yeSTMicroelectronics' BiCMOS SiGe (silicon germanium) inobatanidza zvikamu zveRF, analog uye digital pane chip imwe chete, izvo zvinogona kuderedza zvakanyanya huwandu hwezvikamu zvekunze uye kuwedzera kushandiswa kwesimba.
6. BCD
Bipolar-CMOS-DMOS, tekinoroji iyi inogona kugadzira zvishandiso zvebipolar, CMOS uye DMOS pane chip imwe chete, inonzi BCD process, iyo yakatanga kugadzirwa zvinobudirira neSTMicroelectronics (ST) muna 1986.
Bipolar yakakodzera macircuit eanalog, CMOS yakakodzera macircuit edhijitari nelogic, uye DMOS yakakodzera mapower and high-voltage devices. BCD inosanganisa zvakanakira zvitatu izvi. Mushure mekuvandudzwa kuri kuramba kuchiitwa, BCD inoshandiswa zvakanyanya muzvigadzirwa muminda yekutonga simba, analog data acquisition uye power actuators. Sekureva kwewebhusaiti yepamutemo yeST, maitiro ekukura eBCD achiri pa100nm, 90nm ichiri mukugadzirwa kwema prototype, uye tekinoroji ye40nmBCD ndeyezvigadzirwa zvayo zvechizvarwa chinotevera zviri kugadzirwa.
Nguva yekutumira: Gunyana-10-2024