I-BJT, i-CMOS, i-DMOS kunye nezinye iindlela zobuchwepheshe zeenkqubo ze-semiconductor

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Njengoko iinkqubo zokuvelisa ii-semiconductor ziqhubeka nokwenza iinguqu, ingxelo edumileyo ebizwa ngokuba yi-"Moore's Law" ibisoloko isasazeka kushishino. Yacetywa nguGordon Moore, omnye wabasunguli be-Intel, ngo-1965. Umxholo wayo oyintloko ngulo: inani lee-transistors ezinokufakwa kwisekethe edibeneyo liya kuphinda kabini malunga neenyanga ezili-18 ukuya kwezingama-24. Lo mthetho awungohlalutyo kunye nokuqikelela nje indlela yophuhliso lweshishini, kodwa ukwangumthombo wamandla okuqhubela phambili uphuhliso lweenkqubo zokuvelisa ii-semiconductor - yonke into yenzelwe ukwenza ii-transistors ezinobukhulu obuncinci kunye nokusebenza okuzinzileyo. Ukususela kwiminyaka yoo-1950 ukuza kuthi ga ngoku, malunga neminyaka engama-70, kuye kwaphuhliswa iitekhnoloji zenkqubo ze-BJT, MOSFET, CMOS, DMOS, kunye ne-hybrid BiCMOS kunye ne-BCD.

 

1. I-BJT

I-transistor ye-bipolar junction (BJT), eyaziwa ngokuba yi-triode. Ukuhamba kwetshaja kwi-transistor kungenxa yokusasazeka kunye nokuhamba kwentshukumo yabathwali kwindawo yokudibana kwe-PN. Ekubeni ibandakanya ukuhamba kwee-electron kunye neengxunya, ibizwa ngokuba sisixhobo se-bipolar.

Ukujonga emva kwimbali yokuzalwa kwayo. Ngenxa yengcinga yokutshintsha ii-triode ze-vacuum ngee-amplifiers eziqinileyo, uShockley wacebisa ukwenza uphando olusisiseko kwii-semiconductors ehlotyeni lowama-1945. Kwisiqingatha sesibini sowama-1945, iBell Labs yaseka iqela lophando lwefiziksi eliphantsi kolawulo lukaShockley. Kweli qela, akukho kuphela iingcali zefiziksi, kodwa kukho neenjineli zesekethe kunye neengcali zekhemistri, kuquka uBardeen, ingcali yefiziksi yethiyori, kunye noBrattain, ingcali yefiziksi yovavanyo. NgoDisemba 1947, isiganeko esasithathwa njengesiganeko esibalulekileyo kwizizukulwana ezilandelayo senzeka kakuhle - uBardeen noBrattain baphumelela ekuyileni i-transistor yokuqala ye-germanium point-contact transistor yehlabathi ene-current amplification.

I-transistor yokuqala kaBardeen noBrattain yokudibanisa indawo

Kungekudala emva koko, uShockley wasungula i-transistor ye-bipolar junction ngo-1948. Wacebisa ukuba i-transistor yenziwe zii-pn junctions ezimbini, enye i-forward biased kanti enye i-reverse biased, waza wafumana ilungelo lobunikazi ngoJuni 1948. Ngo-1949, wapapasha ithiyori eneenkcukacha zokusebenza kwe-transistor ye-junction. Kwiminyaka engaphezu kwemibini kamva, izazinzulu kunye neenjineli kwiBell Labs zaphuhlisa inkqubo yokufezekisa ukuveliswa ngobuninzi kwee-transistor ze-junction (into ebalulekileyo ngo-1951), evula ixesha elitsha lobuchwepheshe be-elektroniki. Beqaphela igalelo labo ekuvelisweni kwee-transistor, uShockley, uBardeen kunye noBrattain baphumelele kunye iMbasa yeNobel kwiFiziksi ngo-1956.

Umzobo olula wesakhiwo se-NPN bipolar junction transistor

Ngokuphathelele ulwakhiwo lwee-transistors ze-bipolar junction, ii-BJT eziqhelekileyo yi-NPN kunye ne-PNP. Ulwakhiwo lwangaphakathi oluneenkcukacha luboniswe kumfanekiso ongezantsi. Ummandla we-semiconductor yokungcola ohambelana ne-emitter ngummandla we-emitter, onoxinzelelo oluphezulu lwe-doping; ummandla we-semiconductor yokungcola ohambelana nesiseko ngummandla osisiseko, onobubanzi obuncinci kakhulu kunye noxinzelelo oluphantsi kakhulu lwe-doping; ummandla we-semiconductor yokungcola ohambelana nomqokeleli ngummandla we-collector, onommandla omkhulu kunye noxinzelelo oluphantsi kakhulu lwe-doping.

Iingenelo zobuchwepheshe be-BJT zisantya esiphezulu sokuphendula, i-transconductance ephezulu (utshintsho lwe-voltage yokufaka luhambelana notshintsho olukhulu lwangoku oluphumayo), ingxolo ephantsi, ukuchaneka okuphezulu kwe-analog, kunye nokukwazi ukuqhuba ngamandla ombane; iingxaki kukudibanisa okuphantsi (ubunzulu obuthe nkqo abunakuncipha ngobukhulu obusecaleni) kunye nokusetyenziswa kwamandla aphezulu.

 

2. I-MOS

I-Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), oko kukuthi, i-field effect transistor elawula iswitshi yetshaneli yokuqhuba ye-semiconductor (S) ngokusebenzisa i-voltage kwisango lomaleko wesinyithi (i-M-metal aluminium) kunye nomthombo odlula kumaleko we-oxide (i-O-insulating layer SiO2) ukuvelisa isiphumo sentsimi yombane. Ekubeni isango kunye nomthombo, kunye nesango kunye nomsele wokukhupha amanzi zahlulwe ngumaleko wokufaka i-SiO2, i-MOSFET ikwabizwa ngokuba yi-insulated gate field effect transistor. Ngo-1962, i-Bell Labs yabhengeza ngokusesikweni uphuhliso oluphumeleleyo, olwaba lelinye lawona manqaku abalulekileyo kwimbali yophuhliso lwe-semiconductor kwaye yabeka ngokuthe ngqo isiseko sobugcisa sokufika kwememori ye-semiconductor.

I-MOSFET inokwahlulwahlulwa ibe yitshaneli ye-P kunye netshaneli ye-N ngokwehlobo lwetshaneli yokuqhuba. Ngokwe-amplitude ye-gate voltage, inokwahlulwahlulwa ibe: uhlobo lokuphelelwa ngamandla-xa i-gate voltage ingu-zero, kukho itshaneli yokuqhuba phakathi kwe-drain kunye nomthombo; uhlobo lokuphucula-lwezixhobo zetshaneli ye-N (P), kukho itshaneli yokuqhuba kuphela xa i-gate voltage inkulu kune-zero (ngaphantsi kwe-zero), kwaye amandla e-MOSFET ikakhulu luhlobo lokuphucula itshaneli ye-N.

Umahluko omkhulu phakathi kwe-MOS kunye ne-triode uquka kodwa awukhawulelwanga kula manqaku alandelayo:

-Ii-triode zizixhobo ze-bipolar kuba zombini ii-most kunye nee-minority carriers zithatha inxaxheba ekuqhubeni umbane ngaxeshanye; ngelixa i-MOS iqhuba umbane kuphela ngee-most carriers kwii-semiconductors, kwaye ikwabizwa ngokuba yi-unipolar transistor.
Ii-triode zizixhobo ezilawulwa ngoku ezisebenzisa amandla aphezulu; ngelixa ii-MOSFET zizixhobo ezilawulwa yi-voltage ezisebenzisa amandla aphantsi.
-Iitriode zinamandla amakhulu okumelana ne-in-resistance, ngelixa iityhubhu zeMOS zinamandla amancinci okumelana ne-in-resistance, zizigidi ezimbalwa zeemiliyon. Kwizixhobo zombane zangoku, iityhubhu zeMOS zihlala zisetyenziswa njengeeswitshi, ikakhulu ngenxa yokuba ukusebenza kakuhle kwe-MOS kuphezulu xa kuthelekiswa neetriode.
Iitriode zinexabiso eliphantsi, kwaye iityhubhu zeMOS zibiza kakhulu.
-Kule mihla, iityhubhu zeMOS zisetyenziselwa ukuthatha indawo yeetriode kwiimeko ezininzi. Kuphela kwiimeko ezithile ezisebenzisa amandla aphantsi okanye ezingasebenzisi mandla, siza kusebenzisa iitriode xa sicinga ngenzuzo yexabiso.

3. I-CMOS

I-Complementary Metal Oxide Semiconductor: Itekhnoloji ye-CMOS isebenzisa ii-transistors ze-p-type kunye ne-n-type metal oxide semiconductor (MOSFETs) ezakha izixhobo ze-elektroniki kunye neesekethe ze-logic. Lo mfanekiso ulandelayo ubonisa i-inverter eqhelekileyo ye-CMOS, esetyenziselwa ukuguqulwa kwe-"1→0" okanye "0→1".

Lo mfanekiso ulandelayo licandelo eliqhelekileyo le-CMOS. Icala lasekhohlo yi-NMS, kwaye icala lasekunene yi-PMOS. Iipali ze-G ze-MOS ezimbini ziqhagamshelwe kunye njenge-common gate input, kwaye iipali ze-D ziqhagamshelwe kunye njenge-common drain output. I-VDD iqhagamshelwe kumthombo we-PMOS, kwaye i-VSS iqhagamshelwe kumthombo we-NMOS.

Ngo-1963, uWanlass kunye noSah beFairchild Semiconductor basungula isekethe yeCMOS. Ngo-1968, i-American Radio Corporation (RCA) yaphuhlisa imveliso yokuqala yesekethe edibeneyo yeCMOS, kwaye ukususela ngoko, isekethe yeCMOS ifikelele kuphuhliso olukhulu. Iingenelo zayo kukusetyenziswa kwamandla aphantsi kunye nokuhlanganiswa okuphezulu (inkqubo ye-STI/LOCOS inokuphucula ngakumbi ukuhlanganiswa); ingxaki yayo kukubakho kwesiphumo sokutshixa (i-PN junction reverse bias isetyenziswa njengendawo yokuzahlula phakathi kweetyhubhu zeMOS, kwaye ukuphazamiseka kunokwenza lula iluphu ephuculweyo kwaye kutshise isekethe).

 

4. I-DMOS

I-Double-Diffused Metal Oxide Semiconductor: Njengesakhiwo sezixhobo zeMOSFET eziqhelekileyo, ikwanayo ne-source, i-drain, i-gate kunye nezinye ii-electrodes, kodwa i-breakdown voltage yesiphelo se-drain iphezulu. Inkqubo yokusasazwa kabini iyasetyenziswa.

Umfanekiso ongezantsi ubonisa icandelo elinqamlezileyo le-DMOS ye-N-channel eqhelekileyo. Olu hlobo lwesixhobo se-DMOS ludla ngokusetyenziswa kwizicelo zokutshintsha ezisezantsi, apho umthombo we-MOSFET uqhagamshelwe emhlabeni. Ukongeza, kukho i-DMOS ye-P-channel. Olu hlobo lwesixhobo se-DMOS ludla ngokusetyenziswa kwizicelo zokutshintsha ezikwicala eliphezulu, apho umthombo we-MOSFET uqhagamshelwe kwi-voltage elungileyo. Ngokufanayo ne-CMOS, izixhobo ze-DMOS ezongezelelweyo zisebenzisa ii-N-channel kunye nee-P-channel MOSFET kwi-chip efanayo ukubonelela ngemisebenzi yokutshintsha encedisayo.

Ngokuxhomekeke kwicala letshaneli, i-DMOS inokwahlulwa ibe ziintlobo ezimbini, ezizezi: i-vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) kunye ne-lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET).

Izixhobo zeVDMOS zenziwe ngetshaneli ethe nkqo. Xa kuthelekiswa nezixhobo zeDMOS ezisecaleni, zine-voltage ephezulu yokuqhekeka kunye nokukwazi ukuphatha umbane, kodwa ukumelana nombane kusekukhulu.

Izixhobo ze-LDMOS ziyilwe ngetshaneli esecaleni kwaye zizixhobo ze-MOSFET ezinamandla angalinganiyo. Xa kuthelekiswa nezixhobo ze-DMOS ezithe nkqo, zivumela ukuxhathisa okuphantsi kunye nesantya sokutshintsha esikhawulezayo.

Xa kuthelekiswa neeMOSFET zemveli, iDMOS inomthamo ophezulu wokusebenza kunye nokumelana okuphantsi, ngoko ke isetyenziswa kakhulu kwizixhobo ze-elektroniki ezinamandla aphezulu ezifana nokutshintsha kwamandla, izixhobo zamandla kunye needrive zezithuthi zombane.

 

5. I-BiCMOS

I-Bipolar CMOS yiteknoloji edibanisa i-CMOS kunye nezixhobo ze-bipolar kwi-chip enye ngaxeshanye. Ingcamango yayo esisiseko kukusebenzisa izixhobo ze-CMOS njengesekethe ephambili yeyunithi, kwaye yongeze izixhobo ze-bipolar okanye iisekethe apho kufuneka kuqhutywe khona imithwalo emikhulu ye-capacitive. Ke ngoko, iisekethe ze-BiCMOS zineengenelo zokudibanisa okuphezulu kunye nokusetyenziswa kwamandla aphantsi kweesekethe ze-CMOS, kunye neengenelo zokuqhuba ngesantya esiphezulu kunye namandla aqinileyo eesekethe ze-BJT.

Itekhnoloji ye-STMicroelectronics' BiCMOS SiGe (silicon germanium) idibanisa i-RF, iinxalenye ze-analog kunye nezedijithali kwi-chip enye, nto leyo enokunciphisa kakhulu inani leenxalenye zangaphandle kwaye iphucule ukusetyenziswa kwamandla.

 

6. I-BCD

Le teknoloji, ebizwa ngokuba yi-Bipolar-CMOS-DMOS, inokwenza izixhobo ze-bipolar, CMOS kunye ne-DMOS kwi-chip enye, ebizwa ngokuba yinkqubo ye-BCD, eyaphuhliswa ngempumelelo okokuqala yi-STMicroelectronics (ST) ngo-1986.

I-Bipolar ifanelekile kwiisekethe ze-analog, i-CMOS ifanelekile kwiisekethe zedijithali neze-logic, kwaye i-DMOS ifanelekile kwizixhobo zamandla kunye ne-high-voltage. I-BCD idibanisa iingenelo zezi zintathu. Emva kokuphuculwa okuqhubekayo, i-BCD isetyenziswa kakhulu kwiimveliso kwicandelo lolawulo lwamandla, ukufunyanwa kwedatha ye-analog kunye nee-actuators zamandla. Ngokwewebhusayithi esemthethweni ye-ST, inkqubo evuthiweyo ye-BCD isemalunga ne-100nm, i-90nm isekuyilo lweprototype, kwaye itekhnoloji ye-40nmBCD yeyemveliso yayo yesizukulwana esilandelayo esaphuhliswayo.