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Njengoba izinqubo zokukhiqiza ze-semiconductor ziqhubeka nokwenza intuthuko, isitatimende esidumile esibizwa ngokuthi "uMthetho kaMoore" besilokhu sisakazwa embonini. Saphakanyiswa nguGordon Moore, omunye wabasunguli be-Intel, ngo-1965. Okuqukethwe kwayo okuyinhloko yilokhu: inani lama-transistors angafakwa kusekethe ehlanganisiwe lizophindeka kabili cishe njalo ezinyangeni eziyi-18 kuya kwezingama-24. Lo mthetho awugcini nje ngokuhlaziya nokubikezela ukuthambekela kwentuthuko yemboni, kodwa futhi uyisisusa sokuthuthukiswa kwezinqubo zokukhiqiza ze-semiconductor - konke kungokwenziwe ukwenza ama-transistors anosayizi omncane nokusebenza okuzinzile. Kusukela ngawo-1950 kuze kube manje, cishe eminyakeni engama-70, kuye kwathuthukiswa ubuchwepheshe benqubo ye-BJT, MOSFET, CMOS, DMOS, kanye ne-hybrid BiCMOS kanye ne-BCD.
1. I-BJT
I-transistor ye-bipolar junction (BJT), eyaziwa kakhulu ngokuthi i-triode. Ukugeleza kweshaja ku-transistor kungenxa yokusabalala kanye nokunyakaza kokukhukhuleka kwabathwali endaweni yokuhlangana ye-PN. Njengoba ihilela ukugeleza kwama-electron kanye nezimbobo, ibizwa ngokuthi idivayisi ye-bipolar.
Uma sibheka emuva emlandweni wokuzalwa kwayo. Ngenxa yomqondo wokufaka esikhundleni se-vacuum triodes ngama-amplifiers aqinile, uSchockley wasikisela ukwenza ucwaningo oluyisisekelo kuma-semiconductors ehlobo lika-1945. Engxenyeni yesibili ka-1945, iBell Labs yasungula iqembu locwaningo lwefiziksi eliqinile eliholwa nguShockley. Kuleli qembu, akukhona nje kuphela ososayensi befiziksi, kodwa futhi nonjiniyela besifunda kanye namakhemikhali, okuhlanganisa noBardeen, isazi sefiziksi sethiyori, kanye noBrattain, isazi sefiziksi sokuhlola. NgoDisemba 1947, umcimbi owabhekwa njengengqophamlando yizizukulwane zakamuva wenzeka kahle kakhulu - uBardeen noBrattain basungula ngempumelelo i-transistor yokuqala ye-germanium point-contact emhlabeni ene-acmplization yamanje.
I-transistor yokuqala kaBardeen noBrattain yokuxhumana
Ngemva nje kwalokho, uSchockley wasungula i-transistor ye-bipolar junction ngo-1948. Waphakamisa ukuthi i-transistor ingakhiwa yizihlanganisi ezimbili ze-pn, enye ibheke phambili kanti enye ibheke emuva, futhi wathola ilungelo lobunikazi ngoJuni 1948. Ngo-1949, washicilela inkolelo-mbono eningiliziwe yokusebenza kwe-transistor ye-junction. Eminyakeni engaphezu kwemibili kamuva, ososayensi nonjiniyela eBell Labs basungula inqubo yokufeza ukukhiqizwa okukhulu kwama-transistor e-junction (ingqophamlando ngo-1951), evula inkathi entsha yobuchwepheshe be-elekthronikhi. Beqaphela iminikelo yabo ekusungulweni kwama-transistor, uSchockley, uBardeen noBrattain bawina ngokuhlanganyela umklomelo weNobel Prize kuFiziksi ka-1956.
Umdwebo olula wesakhiwo se-NPN bipolar junction transistor
Ngokuphathelene nesakhiwo sama-transistors e-bipolar junction, ama-BJT avamile yi-NPN kanye ne-PNP. Isakhiwo sangaphakathi esinemininingwane siboniswe esithombeni esingezansi. Isifunda se-semiconductor yokungcola esihambisana ne-emitter yisifunda se-emitter, esinezinga eliphezulu lokusebenzisa i-doping; isifunda se-semiconductor yokungcola esihambisana nesisekelo yisifunda sesisekelo, esinobubanzi obuncane kakhulu kanye nezinga eliphansi kakhulu lokusebenzisa i-doping; isifunda se-semiconductor yokungcola esihambisana ne-collector yisifunda se-collector, esinendawo enkulu kanye nezinga eliphansi kakhulu lokusebenzisa i-doping.
Izinzuzo zobuchwepheshe be-BJT yisivinini esikhulu sokuphendula, i-transconductance ephezulu (izinguquko ze-voltage yokufaka zihambisana nezinguquko ezinkulu zamanje zokukhipha), umsindo ophansi, ukunemba okuphezulu kwe-analog, kanye nekhono lokushayela lamanje eliqinile; izinkinga ukuhlanganiswa okuphansi (ukujula okuqondile akukwazi ukuncishiswa ngosayizi ohlangothini) kanye nokusetshenziswa kwamandla aphezulu.
2. I-MOS
I-Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), okungukuthi, i-transistor yomphumela wensimu elawula ukushintsha kwesiteshi sokuhambisa i-semiconductor (S) ngokusebenzisa i-voltage esangweni lesendlalelo sensimbi (i-M-metal aluminium) kanye nomthombo odlula ku-oxide layer (i-O-insulating layer SiO2) ukuze kukhiqizwe umphumela wensimu kagesi. Njengoba isango nomthombo, kanye nesango kanye ne-drain kuhlukaniswe yisendlalelo sokufaka i-SiO2, i-MOSFET ibizwa nangokuthi i-insulated gate field effect transistor. Ngo-1962, i-Bell Labs yamemezela ngokusemthethweni intuthuko ephumelelayo, eyaba ngesinye sezigaba ezibaluleke kakhulu emlandweni wentuthuko ye-semiconductor futhi yabeka ngqo isisekelo sobuchwepheshe sokufika kwenkumbulo ye-semiconductor.
I-MOSFET ingahlukaniswa ibe yisiteshi se-P kanye nesiteshi se-N ngokuya ngohlobo lwesiteshi esiqhubayo. Ngokusho kwe-amplitude ye-voltage yesango, ingahlukaniswa kanje: uhlobo lokuphelelwa yisikhathi - lapho i-voltage yesango ingu-zero, kukhona isiteshi esiqhubayo phakathi kwe-drain nomthombo; uhlobo lokuthuthukisa - lwamadivayisi esiteshi se-N (P), kukhona isiteshi esiqhubayo kuphela uma i-voltage yesango inkulu kuno-zero (ngaphansi kuka-zero), futhi amandla e-MOSFET ikakhulukazi uhlobo lokuthuthukisa isiteshi se-N.
Umehluko omkhulu phakathi kwe-MOS ne-triode uhlanganisa kodwa awukhawulelwe kumaphuzu alandelayo:
-Ama-triode ayizisetshenziswa ze-bipolar ngoba zombili izithwali ze-majority kanye ne-minority zihlanganyela ekuqhubeni ugesi ngesikhathi esisodwa; kuyilapho i-MOS iqhuba ugesi kuphela ngezithwali ze-majority kuma-semiconductors, futhi ibizwa nangokuthi i-unipolar transistor.
Ama-triode amadivayisi alawulwa yimanje asebenzisa amandla amaningi; kanti ama-MOSFET amadivayisi alawulwa yi-voltage asebenzisa amandla amancane.
-Ama-triode anokumelana okukhulu, kuyilapho amashubhu e-MOS enokumelana okuncane, ama-milliohm ambalwa kuphela. Kumadivayisi kagesi amanje, amashubhu e-MOS ngokuvamile asetshenziswa njengezishintshi, ikakhulukazi ngoba ukusebenza kahle kwe-MOS kuphezulu uma kuqhathaniswa nama-triode.
-Ama-triode anezindleko ezinenzuzo, kanti amashubhu e-MOS abiza kakhulu.
-Kulezi zinsuku, amashubhu e-MOS asetshenziselwa ukufaka esikhundleni sama-triode ezimweni eziningi. Kuphela kwezinye izimo ezinamandla aphansi noma ezingazweli amandla, sizosebenzisa ama-triode uma sibheka inzuzo yentengo.
3. I-CMOS
I-Complementary Metal Oxide Semiconductor: Ubuchwepheshe be-CMOS busebenzisa ama-transistors e-semiconductor e-p-type kanye ne-n-type metal oxide semiconductor (MOSFET) ahambisanayo ukwakha amadivayisi kagesi kanye nama-logic circuits. Isithombe esilandelayo sibonisa i-inverter evamile ye-CMOS, esetshenziselwa ukuguqulwa kwe-"1→0" noma "0→1".
Isithombe esilandelayo siyisigaba esivamile se-CMOS. Uhlangothi lwesobunxele yi-NMS, kanti uhlangothi lwesokudla yi-PMOS. Izinsika ze-G ze-MOS ezimbili zixhunywe ndawonye njengokufakwa kwesango elivamile, kanti izinsika ze-D zixhunywe ndawonye njengokukhipha amanzi okuvamile. I-VDD ixhunywe emthonjeni we-PMOS, kanti i-VSS ixhunywe emthonjeni we-NMOS.
Ngo-1963, uWanlass noSah beFairchild Semiconductor basungula isekethe ye-CMOS. Ngo-1968, i-American Radio Corporation (RCA) yathuthukisa umkhiqizo wokuqala wesekethe ehlanganisiwe ye-CMOS, futhi kusukela ngaleso sikhathi, isekethe ye-CMOS ithole intuthuko enkulu. Izinzuzo zayo ukusetshenziswa kwamandla aphansi kanye nokuhlanganiswa okuphezulu (inqubo ye-STI/LOCOS ingathuthukisa ukuhlanganiswa); ububi bayo ukuba khona komphumela wokukhiya (i-PN junction reverse bias isetshenziswa njengokuhlukaniswa phakathi kwamashubhu e-MOS, futhi ukuphazamiseka kungakha kalula iluphu ethuthukisiwe futhi kushise isekethe).
4. I-DMOS
I-Double-Diffused Metal Oxide Semiconductor: Njengesakhiwo samadivayisi ajwayelekile e-MOSFET, iphinde ibe nomthombo, i-drain, isango kanye namanye ama-electrode, kodwa i-voltage yokuqhekeka kwe-drain end iphezulu. Kusetshenziswa inqubo yokusabalala kabili.
Isithombe esingezansi sibonisa ingxenye evundlile ye-DMOS ejwayelekile yesiteshi se-N. Lolu hlobo lwedivayisi ye-DMOS luvame ukusetshenziswa ezinhlelweni zokushintsha ezisezingeni eliphansi, lapho umthombo we-MOSFET uxhunywe phansi. Ngaphezu kwalokho, kukhona i-DMOS yesiteshi se-P. Lolu hlobo lwedivayisi ye-DMOS luvame ukusetshenziswa ezinhlelweni zokushintsha ezisezingeni eliphezulu, lapho umthombo we-MOSFET uxhunywe ku-voltage enhle. Ngokufanayo ne-CMOS, amadivayisi e-DMOS ahambisanayo asebenzisa ama-MOSFET esiteshi se-N kanye nesiteshi se-P ku-chip efanayo ukuhlinzeka ngemisebenzi yokushintsha ehambisanayo.
Kuye ngokuthi isiteshi siqondiswa kanjani, i-DMOS ingahlukaniswa ngezinhlobo ezimbili, okuyi-vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) kanye ne-lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET).
Amadivayisi e-VDMOS aklanywe ngesiteshi esiqondile. Uma kuqhathaniswa namadivayisi e-DMOS aseceleni, ane-voltage ephezulu yokuqhekeka kanye namakhono okuphatha amandla kagesi, kodwa ukumelana kwawo kusekukhulu kakhulu.
Amadivayisi e-LDMOS aklanywe ngesiteshi esiseceleni futhi angamadivayisi e-MOSFET anamandla angalingani. Uma kuqhathaniswa namadivayisi e-DMOS aqondile, avumela ukumelana okuphansi kanye nesivinini sokushintsha esisheshayo.
Uma kuqhathaniswa nama-MOSFET endabuko, i-DMOS inomthamo ophezulu kanye nokumelana okuphansi, ngakho-ke isetshenziswa kabanzi kumadivayisi kagesi anamandla amakhulu njengezishintshi zikagesi, amathuluzi kagesi kanye nokushayela kwezimoto zikagesi.
5. I-BiCMOS
I-Bipolar CMOS ubuchwepheshe obuhlanganisa i-CMOS namadivayisi e-bipolar ku-chip efanayo ngesikhathi esisodwa. Umqondo wayo oyisisekelo ukusebenzisa amadivayisi e-CMOS njengesekethe yeyunithi eyinhloko, bese wengeza amadivayisi e-bipolar noma amasekethe lapho kudingeka khona ukuqhutshwa kwemithwalo emikhulu ye-capacitive. Ngakho-ke, amasekethe e-BiCMOS anezinzuzo zokuhlanganiswa okuphezulu kanye nokusetshenziswa kwamandla aphansi kwamasekethe e-CMOS, kanye nezinzuzo zamakhono okushayela asheshayo aphezulu kanye namanje aqinile amasekethe e-BJT.
Ubuchwepheshe be-STMicroelectronics' BiCMOS SiGe (silicon germanium) buhlanganisa izingxenye ze-RF, i-analog kanye nezedijithali ku-chip eyodwa, okunganciphisa kakhulu inani lezingxenye zangaphandle futhi kuthuthukise ukusetshenziswa kwamandla.
6. I-BCD
Lobu buchwepheshe bungenza amadivayisi e-bipolar, CMOS kanye ne-DMOS ku-chip efanayo, ebizwa ngokuthi inqubo ye-BCD, eyasungulwa ngempumelelo yi-STMicroelectronics (ST) ngo-1986.
I-Bipolar ifanelekela amasekethe e-analog, i-CMOS ifanelekela amasekethe edijithali nawe-logic, kanti i-DMOS ifanelekela amadivayisi kagesi nawamandla aphezulu. I-BCD ihlanganisa izinzuzo zalezi zintathu. Ngemva kokuthuthuka okuqhubekayo, i-BCD isetshenziswa kabanzi emikhiqizweni emkhakheni wokuphathwa kwamandla, ukutholwa kwedatha ye-analog kanye nama-actuator kagesi. Ngokusho kwewebhusayithi esemthethweni ye-ST, inqubo evuthiwe ye-BCD isengaba ngu-100nm, i-90nm isaklanywa njengesibonelo, kanti ubuchwepheshe be-40nmBCD bungobemikhiqizo yesizukulwane esilandelayo esathuthukiswa.
Isikhathi sokuthunyelwe: Septhemba-10-2024