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Mu gihe ibikorwa byo gukora ibikoresho bya semiconductor bikomeje gutera imbere, itangazo rizwi cyane ryitwa "Moore's Law" ryagiye rikwirakwira mu nganda. Ryatanzwe na Gordon Moore, umwe mu bashinze Intel, mu 1965. Ibikubiye muri ryo ni: umubare wa transistors zishobora gushyirwa ku murongo uhuriweho uzikuba kabiri buri mezi 18 kugeza kuri 24. Iri tegeko si isesengura n'ubuhanuzi bw'iterambere ry'inganda gusa, ahubwo ni n'imbaraga zitera iterambere ry'ibikorwa byo gukora semiconductor - byose ni ugukora transistors zifite ingano nto kandi zikora neza. Kuva mu myaka ya 1950 kugeza ubu, mu myaka igera kuri 70, hakozwe ikoranabuhanga rya BJT, MOSFET, CMOS, DMOS, na hybrid BiCMOS na BCD.
1. BJT
Transistor y’amakuru anyura mu buryo bwa Bipolar (BJT), izwi cyane nka triode. Uburyo umuriro unyuramo muri transistor buterwa ahanini n’uburyo abatwara ibintu bakwirakwira mu mahuriro ya PN. Kubera ko ijyana n’urujya n’uruza rwa electron n’imyobo, yitwa igikoresho cya bipolar.
Dusubije amaso inyuma ku mateka y'ivuka ryayo. Kubera igitekerezo cyo gusimbuza imashini zikora utuntu duto (vacuum triodes) n'imashini zikora utuntu duto (solid amplifiers), Shockley yatanze igitekerezo cyo gukora ubushakashatsi bw'ibanze ku bikoresho bya semiconductors mu mpeshyi yo mu 1945. Mu gice cya kabiri cya 1945, Bell Labs yashinze itsinda ry'ubushakashatsi ku fiziki rya leta riyobowe na Shockley. Muri iri tsinda, ntabwo harimo abahanga mu bya fiziki gusa, ahubwo harimo n'abahanga mu by'imiti, barimo Bardeen, umuhanga mu bya fiziki, na Brattain, umuhanga mu bya fiziki mu bushakashatsi. Mu Kuboza 1947, igikorwa cyafatwaga nk'intambwe ikomeye mu bisekuru byakurikiyeho cyabaye neza cyane - Bardeen na Brattain bavumbuye neza transistor ya mbere ku isi ya germanium point-contact transistor ifite ubushobozi bwo kongera imbaraga.
Transistor ya mbere ya Bardeen na Brattain yo mu bwoko bwa point-contact
Nyuma gato, Shockley yavumbuye transistor y’amakuru ahindagurika mu 1948. Yatanze igitekerezo cy’uko transistor ishobora kuba igizwe n’amakuru abiri ya pn, rimwe rigashingira imbere n’irindi rigashingira inyuma, maze abona patenti muri Kamena 1948. Mu 1949, yasohoye inyigisho irambuye y’imikorere ya transistor y’amakuru ahindagurika. Nyuma y’imyaka irenga ibiri, abahanga mu bya siyansi n’abahanga bo muri Bell Labs bateguye inzira yo kugera ku musaruro mwinshi wa transistor z’amakuru ahindagurika (intambwe ikomeye mu 1951), bifungura igihe gishya cy’ikoranabuhanga rya elegitoroniki. Mu rwego rwo gushimira uruhare rwabo mu guhanga transistor, Shockley, Bardeen na Brattain bafatanyije begukanye igihembo cya Nobel mu bugenge bwa fiziki mu 1956.
Ishusho yoroshye y'imiterere ya transistor ya NPN bipolar junction
Ku bijyanye n'imiterere ya transistors za bipolar junction, BJT zisanzwe ni NPN na PNP. Imiterere y'imbere irambuye igaragara ku ishusho iri hepfo. Agace ka semiconductor y'imyanda ijyanye n'imashini isohora umwuka ni agace ka emitter, gafite urugero rwinshi rwa doping; agace ka semiconductor y'imyanda ijyanye n'ishingiro ni agace k'ibanze, gafite ubugari buto cyane n'urugero ruto cyane rwa doping; agace ka semiconductor y'imyanda ijyanye n'imashini isohora umwuka ni agace ka emitter, gafite ubuso bunini n'urugero ruto cyane rwa doping.
Ibyiza by'ikoranabuhanga rya BJT ni umuvuduko mwinshi w'ingufu, transconductance nyinshi (impinduka z'amashanyarazi yinjira zijyanye n'impinduka nini z'amashanyarazi asohoka), urusaku ruto, ubuhanga buhanitse bwa analog, n'ubushobozi bukomeye bwo gutwara umuriro; ingaruka mbi ni ukwihuza guke (ubujyakuzimu buhagaze ntibushobora kugabanuka iyo ingano y'inyuma) n'ikoreshwa ry'ingufu nyinshi.
2. MOS
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MOSFET ishobora kugabanywamo umuyoboro wa P na N hakurikijwe ubwoko bw'umuyoboro uyobora. Dukurikije ubwinshi bw'amashanyarazi y'irembo, ishobora kugabanywamo: ubwoko bwo kugabanuka - iyo voltage y'irembo ari zeru, hari umuyoboro uyobora hagati y'umuyoboro n'isoko; ubwoko bwo kongera ingufu - ku bikoresho bya N (P), hari umuyoboro uyobora ingufu gusa iyo voltage y'irembo iri hejuru ya zeru (munsi ya zeru), kandi imbaraga za MOSFET ahanini ni ubwoko bwo kongera ingufu z'irembo bwa N.
Itandukaniro rikomeye riri hagati ya MOS na triode ririmo ariko ntirigarukira gusa ku ngingo zikurikira:
-Triode ni ibikoresho bya bipolar kuko abatwara amashanyarazi benshi n'abatwara amashanyarazi make bagira uruhare mu gutwara amashanyarazi icyarimwe; mu gihe MOS itwara amashanyarazi gusa binyuze mu batwara amashanyarazi benshi muri semiconductors, kandi yitwa transistor imwe.
-Triode ni ibikoresho bigenzurwa n'amashanyarazi bikoresha ingufu nyinshi; mu gihe MOSFET ari ibikoresho bigenzurwa n'amashanyarazi bikoresha ingufu nke.
-Izinyabutatu zifite ubushobozi bwo guhangana n'amashanyarazi bwinshi, mu gihe izinyabutatu za MOS zifite ubushobozi bwo guhangana n'amashanyarazi buke, ni ukuvuga miliyoni nke gusa. Mu bikoresho by'amashanyarazi bigezweho, izinyabutatu za MOS muri rusange zikoreshwa nk'imashini zihindura amashanyarazi, ahanini bitewe nuko ubushobozi bwa MOS buri hejuru ugereranije n'izinyabutatu.
-Izinyabutabire zifite ikiguzi cyiza cyane, kandi imiyoboro ya MOS irahenze cyane.
-Muri iki gihe, imiyoboro ya MOS ikoreshwa mu gusimbuza imiyoboro itatu mu bihe byinshi. Gusa mu bihe bimwe na bimwe by'ingufu nke cyangwa bidakoresha ingufu, tuzakoresha imiyoboro itatu ukurikije inyungu ku giciro.
3. CMOS
Semiconductor y’icyuma cy’inyongera: Ikoranabuhanga rya CMOS rikoresha transistors z’icyuma z’inyongera za p-type na n-type metal oxide semiconductor (MOSFET) mu gukora ibikoresho by’ikoranabuhanga n’imiyoboro ya logique. Ishusho ikurikira igaragaza inverter isanzwe ya CMOS, ikoreshwa mu guhindura "1→0" cyangwa "0→1".
Ishusho ikurikira ni igice gisanzwe cya CMOS. Uruhande rw'ibumoso ni NMS, naho uruhande rw'iburyo ni PMOS. Inkingi za G za MOS ebyiri zihujwe hamwe nk'injira rusange ry'irembo, naho inkingi za D zihujwe hamwe nk'isohoka rusange ry'amazi. VDD ihujwe n'isoko ya PMOS, naho VSS ihujwe n'isoko ya NMOS.
Mu 1963, Wanlass na Sah bo muri Fairchild Semiconductor bavumbuye uruziga rwa CMOS. Mu 1968, Ikigo cy’Abanyamerika gishinzwe Radiyo (RCA) cyakoze ibicuruzwa bya mbere bya CMOS, kandi kuva icyo gihe, uruziga rwa CMOS rwageze ku iterambere rikomeye. Ibyiza byarwo ni ugukoresha ingufu nke no guhuza cyane (inzira ya STI/LOCOS ishobora kunoza guhuza); ikibi cyarwo ni ukubaho kw'ingaruka zo gufunga (PN junction reverse bias ikoreshwa nk'itandukaniro hagati y'imiyoboro ya MOS, kandi kubangamirana bishobora gukora umuyoboro mwinshi kandi bigatwika uruziga).
4. DMOS
Semiconductor y'icyuma ikwirakwizwa inshuro ebyiri: Kimwe n'imiterere y'ibikoresho bisanzwe bya MOSFET, ifite kandi source, drain, gate n'izindi electrodes, ariko voltage yo kwangirika kw'inkombe y'umuyoboro w'amazi iba iri hejuru. Uburyo bwo kwangirika inshuro ebyiri bukoreshwa.
Ishusho iri hepfo igaragaza igice cya DMOS isanzwe ya N-channel. Ubu bwoko bw'igikoresho cya DMOS bukunze gukoreshwa mu buryo bwo guhinduranya ku ruhande rwo hasi, aho isoko ya MOSFET ihujwe n'ubutaka. Byongeye kandi, hari DMOS ya P-channel. Ubu bwoko bw'igikoresho cya DMOS bukunze gukoreshwa mu buryo bwo guhinduranya ku ruhande rwo hejuru, aho isoko ya MOSFET ihujwe na voltage nziza. Kimwe na CMOS, ibikoresho bya DMOS byuzuzanya bikoresha MOSFET za N-channel na P-channel kuri chip imwe kugira ngo bitange imirimo yuzuzanya yo guhinduranya.
Bitewe n'icyerekezo cy'umuyoboro, DMOS ishobora kugabanywamo ubwoko bubiri, ari bwo transistor ifite imiterere ibiri ihindagurika mu buryo bubiri (vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) na transistor ifite imiterere ibiri ihindagurika mu buryo bubiri (lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET).
Ibikoresho bya VDMOS byakozwe bifite umuyoboro uhagaze. Ugereranyije n'ibikoresho bya DMOS biri ku ruhande, bifite imbaraga zo kwangirika cyane n'ubushobozi bwo gufata umuriro, ariko ubushobozi bwo kubikora buracyari bunini.
Ibikoresho bya LDMOS byakozwe bifite umuyoboro wo ku ruhande kandi ni ibikoresho bya MOSFET bifite imbaraga zidasanzwe. Ugereranyije n'ibikoresho bya DMOS bihagaze, byemerera ubushobozi bwo kudakoresha ingufu nyinshi no kwihuta mu guhinduranya ibikoresho.
Ugereranyije na MOSFET zisanzwe, DMOS ifite ubushobozi bwo gukoresha ingufu nyinshi kandi ifite ubushobozi bwo kudakora neza, bityo ikoreshwa cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi nka switch z'amashanyarazi, ibikoresho by'amashanyarazi n'ibinyabiziga bikoresha amashanyarazi.
5. BiCMOS
Bipolar CMOS ni ikoranabuhanga rihuza CMOS n'ibikoresho bya bipolar kuri chip imwe icyarimwe. Igitekerezo cyayo cy'ibanze ni ugukoresha ibikoresho bya CMOS nk'urusobe rw'ingenzi, no kongeramo ibikoresho bya bipolar cyangwa circuits aho imizigo minini isabwa gutwara. Kubwibyo, circuits za BiCMOS zifite ibyiza byo guhuza cyane no gukoresha ingufu nke za circuits za CMOS, hamwe n'inyungu zo gutwara umuvuduko mwinshi n'imbaraga zikomeye za circuits za BJT.
Ikoranabuhanga rya STMicroelectronics rya BiCMOS SiGe (silicon germanium) rihuza ibice bya RF, analog na digitale kuri chip imwe, ibyo bikaba bishobora kugabanya cyane umubare w'ibice byo hanze no kunoza ikoreshwa ry'ingufu.
6. BCD
Iyi koranabuhanga ya Bipolar-CMOS-DMOS, ishobora gukora ibikoresho bya bipolar, CMOS na DMOS kuri chip imwe, yitwa BCD process, yakozwe bwa mbere neza na STMicroelectronics (ST) mu 1986.
Bipolar ikwiriye imiyoboro ya analog, CMOS ikwiriye imiyoboro ya digitale na logique, naho DMOS ikwiriye imiyoboro y'amashanyarazi n'ibikoresho bifite voltage nyinshi. BCD ihuza ibyiza byabyo bitatu. Nyuma yo kunoza ibikorwa, BCD ikoreshwa cyane mu bicuruzwa mu bijyanye no gucunga ingufu, kubona amakuru ya analog no gukoresha ingufu. Nk'uko urubuga rwa ST rubivuga, inzira igeze kuri BCD iracyari hafi 100nm, 90nm iracyari mu gishushanyo mbonera, kandi ikoranabuhanga rya 40nmBCD ni iry'ibicuruzwa byayo byo mu gisekuru gitaha biri gukorwa.
Igihe cyo kohereza: 10 Nzeri 2024