With the gradual mass production of conductive SiC substrates, higher requirements are put forward for the stability and repeatability of the process. In particular, the control of defects, the sma...
West Lafayette, Indiana – SK hynix Inc. announced plans to invest nearly $4 billion to build an advanced packaging manufacturing and R&D facility for artificial intelligence products at P...
Atmospheric pressure sintered silicon carbide is a non-metallic carbide with silicon and carbon covalent bond, and its hardness is second only to diamond and boron carbide. The chemical formula is ...
Isostatic pressed graphite is a new product developed in the world in the past 50 years, which is closely related to today’s high-tech. It is not only a great success in civilian use, but als...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...