Mmalite nke aha epitaxial wafer
Nke mbụ, ka anyị mee ka obere echiche pụta ìhè: nkwadebe wafer gụnyere njikọ abụọ dị mkpa: nkwadebe substrate na usoro epitaxial. Substrate ahụ bụ wafer nke e ji ihe semiconductor otu kristal mee. Substrate ahụ nwere ike ịbanye ozugbo na usoro mmepụta wafer iji mepụta ngwaọrụ semiconductor, ma ọ bụ enwere ike ịhazi ya site na usoro epitaxial iji mepụta wafer epitaxial. Epitaxy na-ezo aka na usoro nke ịkọ oyi akwa ọhụrụ nke otu kristal na otu ihe mkpuchi kristal nke ejiri nlezianya hazie site na ịkpụ, ịcha, ịchacha, wdg. Crystal otu ọhụrụ nwere ike ịbụ otu ihe ahụ dị ka ihe mkpuchi ahụ, ma ọ bụ ọ nwere ike ịbụ ihe dị iche (homoneous) epitaxy ma ọ bụ heteroepitaxy). Ebe ọ bụ na otu kristal ọhụrụ ahụ na-agbatị ma na-eto dịka usoro kristal nke substrate si dị, a na-akpọ ya oyi akwa epitaxial (ọkpụrụkpụ ya na-abụkarị microns ole na ole, na-ewere silicon dị ka ihe atụ: ihe uto silicon epitaxial pụtara bụ na silicon otu kristal substrate nwere nhazi kristal ụfọdụ. A na-etolite oyi akwa kristal nwere ezigbo nhazi lattice na iguzogide na ọkpụrụkpụ dị iche iche nwere otu nhazi kristal ahụ), a na-akpọkwa substrate nwere oyi akwa epitaxial wafer epitaxial (epitaxial wafer = oyi akwa epitaxial + substrate). Mgbe e mepụtara ngwaọrụ ahụ na oyi akwa epitaxial, a na-akpọ ya epitaxial dị mma. Ọ bụrụ na e mepụtara ngwaọrụ ahụ na substrate, a na-akpọ ya reverse epitaxy. N'oge a, oyi akwa epitaxial na-arụ naanị ọrụ nkwado.
Wafer a kpụchara akpụcha
Ụzọ uto epitaxial
Mkpụrụ ndụ ihe nketa epitaxy (MBE): Ọ bụ teknụzụ uto epitaxial semiconductor nke a na-arụ n'okpuru ọnọdụ ikuku dị elu. N'ime usoro a, a na-ekupụ ihe sitere na ya n'ụdị ogwe nke atọm ma ọ bụ molekul wee tinye ya na ihe mkpuchi kristal. MBE bụ teknụzụ uto ihe nkiri semiconductor dị nkenke ma dịkwa mfe ịchịkwa nke nwere ike ijikwa ọkpụrụkpụ nke ihe echekwara na ọkwa atọm.
CVD organic metal (MOCVD): N'usoro MOCVD, a na-enye gas organic metal na hydride gas N nke nwere ihe ndị achọrọ na substrate ahụ na okpomọkụ kwesịrị ekwesị, na-eme mmeghachi omume kemịkalụ iji mepụta ihe semiconductor achọrọ, a na-etinyekwa ya na substrate ahụ, ebe a na-ewepụ ihe ndị fọdụrụ na ngwaahịa mmeghachi omume.
Epitaxy nke Vapor (VPE): Epitaxy nke Vapor nke Vapor bụ teknụzụ dị mkpa a na-ejikarị eme ihe n'imepụta ngwaọrụ semiconductor. Isi ihe dị mkpa bụ ibuga uzuoku nke ihe ndị dị n'ime ihe ma ọ bụ ihe ndị mejupụtara ya n'ime gas ebu, ma tinye kristal n'elu ihe ndị ahụ site na mmeghachi omume kemịkalụ.
Kedu nsogbu ndị usoro epitaxy na-edozi?
Naanị ihe kristal buru ibu nke otu nwere ike igbo mkpa na-eto eto nke imepụta ngwaọrụ semiconductor dị iche iche. Ya mere, e mepụtara uto epitaxial, teknụzụ uto kristal dị gịrịgịrị, na njedebe nke afọ 1959. Yabụ kedu onyinye kpọmkwem teknụzụ epitaxy nwere na mmepe nke ihe?
Maka silicon, mgbe teknụzụ uto nke silicon epitaxial malitere, ọ bụ oge siri ike maka mmepụta nke transistors silicon ugboro ugboro na ike dị elu. Site n'echiche nke ụkpụrụ transistor, iji nweta ugboro ugboro na ike dị elu, voltaji mmebi nke mpaghara nchịkọta ga-adị elu na iguzogide usoro ga-adị obere, ya bụ, mbelata voltaji saturation ga-adị obere. Nke mbụ chọrọ ka iguzogide ihe dị na mpaghara nchịkọta kwesịrị ịdị elu, ebe nke ikpeazụ chọrọ ka iguzogide ihe dị na mpaghara nchịkọta kwesịrị ịdị ala. Mpaghara abụọ ahụ na-emegiderịta onwe ha. Ọ bụrụ na ebelata ọkpụrụkpụ nke ihe dị na mpaghara nchịkọta iji belata iguzogide usoro, wafer silicon ga-adị oke mkpa ma dị nro iji hazie. Ọ bụrụ na ebelata iguzogide ihe dị na ya, ọ ga-emegide ihe mbụ achọrọ. Agbanyeghị, mmepe nke teknụzụ epitaxial agaala nke ọma. doziri nsogbu a.
Ngwọta: Kụọ akwa epitaxial dị elu nke na-eguzogide ike n'elu ihe na-eguzogide ike dị oke ala, ma mee ngwaọrụ ahụ na akwa epitaxial. Akwa epitaxial a nke na-eguzogide ike dị elu na-eme ka ọkpọkọ ahụ nwee voltaji dị elu nke na-agbaji, ebe ihe na-eguzogide ike dị ala Ọ na-ebelatakwa nguzogide nke ihe na-eguzogide ike, si otú a na-ebelata mbelata voltaji saturation, si otú a na-edozi esemokwu dị n'etiti ha abụọ.
Na mgbakwunye, teknụzụ epitaxy dị ka vapor phase epitaxy na liquid phase epitaxy nke GaAs na ihe ndị ọzọ dị na III-V, II-VI na ihe ndị ọzọ dị na molekul compound semiconductor emepụtala nke ọma ma bụrụ ntọala maka ọtụtụ ngwaọrụ microwave, ngwaọrụ optoelectronic, ike. Ọ bụ teknụzụ usoro dị oke mkpa maka mmepụta ngwaọrụ, ọkachasị ojiji nke ọma nke molekul beam na metal organic vapor phase epitaxy technology na obere oyi akwa, superlattices, quantum olulu mmiri, strained superlattices, na atomic-level thin-layer epitaxy, nke bụ nzọụkwụ ọhụrụ na nyocha semiconductor. Mmepe nke "energy belt engineering" n'ọhịa atọrọla ntọala siri ike.
N'ọrụ bara uru, a na-emepụta ngwaọrụ semiconductor sara mbara na oyi akwa epitaxial, wafer silicon carbide n'onwe ya na-arụkwa ọrụ naanị dị ka ihe ndabere. Ya mere, njikwa nke oyi akwa epitaxial bụ akụkụ dị mkpa nke ụlọ ọrụ semiconductor sara mbara.
Nkà 7 dị mkpa na teknụzụ epitaxy
1. Enwere ike ịkụ akwa epitaxial siri ike (dị ala) n'elu ihe ndị na-eguzogide ọgwụ dị ala (dị elu).
2. Enwere ike ịkụnye oyi akwa epitaxial nke ụdị N (P) na substrate ụdị P (N) iji mepụta njikọ PN ozugbo. Enweghị nsogbu nkwụghachi ụgwọ mgbe ejiri usoro mgbasa mee njikọ PN na otu ihe mkpuchi kristal.
3. Ejikọtara ya na teknụzụ ihe mkpuchi ihu, a na-eme uto epitaxial ahọpụtara n'ebe a họpụtara, na-emepụta ọnọdụ maka mmepụta nke sekit na ngwaọrụ ndị nwere usoro pụrụ iche.
4. Enwere ike ịgbanwe ụdị na ntinye nke doping dịka mkpa si dị n'oge usoro uto epitaxial. Mgbanwe na ntinye nwere ike ịbụ mgbanwe mberede ma ọ bụ mgbanwe nwayọ.
5. Ọ nwere ike itolite ọtụtụ ihe dị iche iche, nwere ọtụtụ oyi akwa, yana ọtụtụ oyi akwa dị gịrịgịrị nke nwere ihe dị iche iche.
6. Enwere ike ime uto epitaxial n'okpomọkụ dị ala karịa ebe agbaze nke ihe ahụ, a na-achịkwa ọnụego uto ahụ, a pụkwara inweta uto epitaxial nke ọkpụrụkpụ ọkwa atọm.
7. Ọ nwere ike ịkụ otu ihe kristal nke a na-apụghị ịdọpụta, dịka GaN, otu kristal nke ihe ndị dị na tertiary na quaternary, wdg.
Oge ozi: Mee-13-2024

