Ni gute urwego rwa epitaxial rufasha ibikoresho bya semiconductor?

Inkomoko y'izina rya epitaxial wafer

Ubwa mbere, reka twamamaze igitekerezo gito: gutegura wafer birimo isano ebyiri zikomeye: gutegura substrate na epitaxial. Substrate ni wafer ikozwe mu bikoresho bya semiconductor single crystal. Substrate ishobora kwinjira mu buryo butaziguye mu gukora wafer kugira ngo ikore ibikoresho bya semiconductor, cyangwa ishobora gutunganywa na epitaxial processes kugira ngo ikore wafer za epitaxial. Epitaxy yerekeza ku gikorwa cyo gukura urwego rushya rwa crystal imwe ku substrate imwe ya crystal yatunganyijwe neza no gukata, gusya, gusya, nibindi. Crystal imwe nshya ishobora kuba ibikoresho bimwe na substrate, cyangwa ishobora kuba ibikoresho bitandukanye (bihuye) epitaxy cyangwa heteroepitaxy). Kubera ko urwego rushya rwa kristu rukura kandi rugakura hakurikijwe urwego rwa kristu rw'ubutaka, rwitwa urwego rwa epitaxial (ubunini busanzwe ni mikoroni nke, dufashe urugero rwa silicon: icyo silicon epitaxial isobanura ni urwego rwa kristu rumwe rwa kristu rufite icyerekezo runaka cya kristu. Urwego rwa kristu rufite imiterere myiza ya lattice hamwe n'ubugari butandukanye hamwe n'icyerekezo kimwe cya kristu nk'icyo kristu ikura), naho urwego rufite urwego rwa epitaxial rwitwa uruziga rwa epitaxial (epitaxial wafer = urwego rwa epitaxial + icyerekezo). Iyo igikoresho gikozwe ku rundi ruhande rwa epitaxial, cyitwa positive epitaxial. Iyo igikoresho gikozwe ku rundi ruhande, cyitwa reverse epitaxial. Muri iki gihe, urwego rwa epitaxial rugira uruhare runini gusa.

Agafu k'inyama gasukuye

Uburyo bwo gukura mu gice cya Epitaxial

Ikoranabuhanga rya Molecular Beam Epitaxie (MBE): Ni ikoranabuhanga rya semiconductor epitaxial growth rikorwa mu bihe by’umwuka mwinshi cyane. Muri ubu buryo, ibikoresho bivamo umwuka mu buryo bw’umuyoboro wa atome cyangwa molekile hanyuma bigashyirwa ku gice cy’ubutare. MBE ni ikoranabuhanga rya semiconductor rigezweho kandi rigenzurwa rishobora kugenzura neza ubunini bw’ibikoresho byashyizwe ku rwego rwa atome.
CVD y’umwimerere y’icyuma (MOCVD): Mu buryo bwa MOCVD, icyuma na hydride gaze N irimo ibintu bikenewe bigezwa kuri substrate ku bushyuhe bukwiye, bigakorwaho chemical reaction kugira ngo bikore ibikoresho bya semiconductor bikenewe, hanyuma bigashyirwa kuri substrate, mu gihe ibindi bintu n’ibikomoka kuri reaction bisohoka.
Imashini ikoresha umwuka ushyushye (VPE): Imashini ikoresha umwuka ushyushye ni ikoranabuhanga ry'ingenzi rikoreshwa cyane mu gukora ibikoresho bya semiconductor. Ihame ry'ibanze ni ugutwara umwuka ushyushye w'ibintu cyangwa imvange mu mwuka utwara ibintu, no gushyira kristu ku butaka binyuze mu mikorere ya shimi.

Ni ibihe bibazo inzira ya epitaxy ikemura?

Ibikoresho bya kristu imwe gusa ni byo bidashobora guhaza ibyifuzo bikomeje kwiyongera byo gukora ibikoresho bitandukanye bya semiconductor. Kubwibyo, iterambere rya epitaxial, ikoranabuhanga ryo gukuraho ibikoresho bya kristu imwe, ryakozwe mu mpera za 1959. None se ni uruhe ruhare rwihariye ikoranabuhanga rya epitaxy rigira mu guteza imbere ibikoresho?

Kuri silicon, ubwo ikoranabuhanga ryo gukura kwa silicon epitaxial ryatangiraga, byari ibihe bigoye cyane mu gukora transistors za silicon zifite frequency nyinshi n'imbaraga nyinshi. Ukurikije amahame ya transistors, kugira ngo ubone frequency nyinshi n'imbaraga nyinshi, voltage yo kwangirika k'agace gakusanya igomba kuba hejuru kandi resistance y'uruhererekane igomba kuba nto, ni ukuvuga ko igabanuka ry'voltage y'amazi rigomba kuba rito. Iya mbere isaba ko resistivity y'ibikoresho biri mu gace gakusanya igomba kuba hejuru, mu gihe iya nyuma isaba ko resistivity y'ibikoresho biri mu gace gakusanya igomba kuba hasi. Intara zombi ziravuguruzanya. Niba ubunini bw'ibikoresho biri mu gace gakusanya bugabanutse kugira ngo bigabanye resistivity y'uruhererekane, silicon wafer izaba nto cyane kandi yoroshye gutunganywa. Niba resistivity y'ibikoresho yagabanutse, izavuguruza ibisabwa bya mbere. Ariko, iterambere ry'ikoranabuhanga rya epitaxial ryagenze neza. ryakemuye iki kibazo.

Umuti: Tegura urwego rwa epitaxial rufite ubushobozi bwo guhangana n’umuyaga mwinshi ku gice cyo hasi cyane, hanyuma ukore igikoresho ku gice cyo hasi cyane. Uru rwego rwa epitaxial rufite ubushobozi bwo guhangana n’umuyaga mwinshi rutuma umuyoboro ugira ingufu nyinshi zo gucikamo umwuka, mu gihe igice cyo hasi cyane kigabanya imbaraga zo guhangana n’umuyaga, bityo bikagabanya igabanuka ry’imbaraga zo gukamura umwuka, bityo bigakemura ikibazo kiri hagati yabyo byombi.

Byongeye kandi, ikoranabuhanga rya epitaxy nka epitaxy y’icyiciro cy’umwuka n’iy’amazi ya GaAs n’izindi mashini za III-V, II-VI n’izindi mashini za semiconductor zigizwe na molekile nabyo byaratejwe imbere cyane kandi byabaye ishingiro ry’ibikoresho byinshi bya mikoroonde, ibikoresho bya optoelectronic, ingufu. Ni ikoranabuhanga ry’ingenzi mu gukora ibikoresho, cyane cyane ikoreshwa neza ry’ikoranabuhanga rya epitaxy y’icyiciro cy’umwuka n’icyuma mu bice bito, superlattices, quantum wells, superlattices zikozwe mu buryo bugoye, na epitaxy y’icyiciro gito, ikaba ari intambwe nshya mu bushakashatsi bwa semiconductor. Iterambere rya "energy belt engineering" muri urwo rwego ryashyizeho urufatiro rukomeye.

Mu bikorwa bifatika, ibikoresho bya semiconductor bikoresha bandgap hafi ya byose bikorwa ku gice cya epitaxial, kandi wafer ya silicon carbide ubwayo ikora nk'ishingiro gusa. Kubwibyo, kugenzura igice cya epitaxial ni igice cyingenzi cy'inganda za semiconductor bikoresha bandgap.

Ubuhanga 7 bw'ingenzi mu ikoranabuhanga rya epitaxy

1. Uduce twa epitaxial duhangana cyane (duke) dushobora guhingwa mu buryo bwa epitaxial ku duce duke (duke) duhangana cyane.
2. Urukuta rwa epitaxial rwo mu bwoko bwa N (P) rushobora guhingwa ku gice cya P (N) kugira ngo rukore aho PN ihurira. Nta kibazo cyo kwishyura iyo ukoresheje uburyo bwo gukwirakwiza PN ku gice kimwe cya kristu.
3. Hamwe n'ikoranabuhanga rya mask, gukura kw'ikirahure mu bice byabugenewe bikorwa, bigashyiraho uburyo bwo gukora imiyoboro n'ibikoresho bifite imiterere yihariye.
4. Ubwoko n'ingano ya doping bishobora guhinduka bitewe n'ibikenewe mu gihe cyo gukura kwa epitaxial. Impinduka mu ngano ishobora kuba impinduka itunguranye cyangwa impinduka zigenda buhoro.
5. Ishobora gukura ibintu bitandukanye, bifite amashami menshi, bifite ibice byinshi n'ibice bito cyane bifite ibice bitandukanye.
6. Gukura kwa epitaxial bishobora gukorwa ku bushyuhe buri munsi y’aho ibintu bishongesha, umuvuduko wo gukura uragenzurwa, kandi gukura kwa epitaxial k’ubugari bwa atome bishobora kugerwaho.
7. Ishobora gukura ibikoresho bya kristu imwe idashobora gukururwa, nka GaN, urwego rumwe rwa kristu y’ibinyabutabire bya tertiary na quaternary, nibindi.