Nigute ibice bya epitaxial bifasha ibikoresho bya semiconductor?

Inkomoko yizina epitaxial wafer

Ubwa mbere, reka tumenyekanishe igitekerezo gito: gutegura wafer birimo amahuriro abiri yingenzi: gutegura substrate hamwe na epitaxial process. Substrate ni wafer ikozwe muri semiconductor imwe ya kristu. Substrate irashobora kwinjira muburyo butaziguye bwo gukora wafer kugirango ikore ibikoresho bya semiconductor, cyangwa irashobora gutunganywa na epitaxial inzira kugirango itange epitaxial wafers. Epitaxy bivuga inzira yo gukura urwego rushya rwa kirisiti imwe kuri sisitemu imwe ya kirisiti yatunganijwe neza mugukata, gusya, gusya, nibindi. Crystal imwe imwe irashobora kuba ibintu bimwe na substrate, cyangwa birashobora kuba ibintu bitandukanye (homogeneous) epitaxy cyangwa heteroepitaxy). Kuberako urwego rushya rwa Crytal ruragurira kandi rugakura ukurikije subse ya substrate, byitwa urwego rwa karita icyerekezo nkuko bigaragara ku nkukana), hamwe na substrate hamwe na eptaxial later yitwa an epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Iyo igikoresho gikozwe kuri epitaxial layer, byitwa epitaxy nziza. Niba igikoresho gikozwe kuri substrate, byitwa revers epitaxy. Muri iki gihe, epitaxial layer igira uruhare gusa.

Wafer

Uburyo bwo gukura Epitaxial

Molecular beam epitaxy (MBE): Ni tekinoroji yo gukura ya semiconductor epitaxial ikorwa mugihe cya ultra-high vacuum conditions. Muri ubu buhanga, ibikoresho byatanzwe biva mu kirere mu buryo bwa beam ya atome cyangwa molekile hanyuma bigashyirwa kuri substrate ya kristaline. MBE ni tekinoroji isobanutse kandi igenzurwa na semiconductor yoroheje ya tekinoroji yo gukura ya firime ishobora kugenzura neza ubunini bwibintu byabitswe kurwego rwa atome.
Ibyuma kama CVD (MOCVD): Mubikorwa bya MOCVD, icyuma kama na gaze ya hydride N gaze irimo ibintu bisabwa ihabwa substrate ku bushyuhe bukwiye, ikorerwa imiti kugirango itange ibikoresho bya semiconductor ikenewe, hanyuma igashyirwa kuri substrate kuri, mugihe ibintu bisigaye hamwe nibicuruzwa bisohoka.
Icyuka cya Vapor epitaxy (VPE): Epitaxy ya Vapor phase ni tekinoroji yingenzi ikoreshwa mugukora ibikoresho bya semiconductor. Ihame shingiro nugutwara imyuka yibintu byibanze cyangwa ibivanze muri gaze yikigo, no kubitsa kristu kuri substrate binyuze mumiti.

Ni ibihe bibazo inzira epitaxy ikemura?

Gusa igice kinini cyibikoresho bya kirisiti ntigishobora guhaza ibikenerwa byo gukora ibikoresho bitandukanye bya semiconductor. Noneho rero, gukura kwa epitaxial, tekinoroji yoroheje yo gukura yibikoresho bya kristu, byakozwe mumpera za 1959. None se ni uruhe ruhare rwihariye ikoranabuhanga rya epitaxy rifite mugutezimbere ibikoresho?

Kuri silicon, mugihe tekinoroji yo gukura ya silicon epitaxial yatangiriye, mubyukuri byari igihe kitoroshye cyo gukora silicon yumurongo mwinshi hamwe na tristoriste ikomeye. Duhereye ku mahame ya tristoriste, kugirango ubone inshuro nyinshi nimbaraga nyinshi, imbaraga zo gusenyuka zumwanya wikusanyirizo zigomba kuba ndende kandi urukurikirane rwikurikiranya rugomba kuba ruto, ni ukuvuga ko igitonyanga cyuzuye cyuzuye kigomba kuba gito. Iyambere isaba ko ibintu birwanya ibikoresho byakusanyirijwe bigomba kuba byinshi, mugihe ibyanyuma bisaba ko kurwanya ibikoresho byakusanyirijwe bigomba kuba bike. Intara zombi ziravuguruzanya. Niba umubyimba wibintu mukarere kegeranya wagabanutse kugirango ugabanye urukurikirane rwimikorere, wafer ya silicon izaba yoroheje cyane kandi yoroshye kuburyo itunganijwe. Niba kurwanya ibintu bigabanutse, bizavuguruza icyifuzo cya mbere. Ariko, iterambere ryikoranabuhanga rya epitaxial ryaragenze neza. byakemuye iki kibazo.

Igisubizo: Gukura epitaxial ep-epistial anti-resistance kurwego rwo hejuru cyane, hanyuma ukore igikoresho kumurongo wa epitaxial. Iyi epitaxial epistaxial irwanya cyane ko umuyoboro ufite imbaraga nyinshi zo gusenyuka, mugihe insimburangingo nkeya nayo igabanya ubukana bwa substrate, bityo bikagabanya umuvuduko wa voltage wuzuye, bityo bikemura amakimbirane hagati yombi.

Byongeye kandi, tekinoroji ya epitaxy nka epapxy epitaxy na fata epitaxy ya GaAs hamwe nibindi bikoresho bya III-V, II-VI hamwe nibindi bikoresho bya semiconductor ya semiconductor nayo yatejwe imbere cyane kandi ibaye ishingiro ryibikoresho byinshi bya microwave, ibikoresho bya optoelectronic, power Ni tekinoroji ya tekinoroji ya tekinike, ibikoresho bya tekinike ya vitamine, superlattices iremereye, hamwe na atomic-urwego ruto cyane-epitaxy, nintambwe nshya mubushakashatsi bwa semiconductor. Iterambere ry "ingufu zumukandara" murwego rwashizeho urufatiro rukomeye.

Mubikorwa bifatika, ibikoresho bigari bya semiconductor ibikoresho hafi ya byose bikozwe kumurongo wa epitaxial, kandi wafer ya silicon carbide wafer ubwayo ikora nka substrate gusa. Kubwibyo, kugenzura epitaxial layer ni igice cyingenzi cyinganda nini ya semiconductor inganda.

Ubuhanga 7 bwingenzi muri tekinoroji ya epitaxy

1.
2. Ubwoko bwa N (P) epitaxial layer irashobora guhingwa muburyo bwubwoko bwa P (N) kugirango habeho PN ihuza. Ntakibazo cyindishyi mugihe ukoresheje uburyo bwo gukwirakwiza gukora PN ihuza kumurongo umwe wa kristu.
3. Hamwe na tekinoroji ya mask, gukura kwa epitaxial guhitamo gukorerwa ahantu hagenwe, bigashyiraho uburyo bwo kubyara imiyoboro ihuriweho hamwe nibikoresho byihariye.
4. Ubwoko hamwe nibitekerezo bya doping birashobora guhinduka ukurikije ibikenewe mugihe cyo gukura kwa epitaxial. Impinduka yibitekerezo irashobora guhinduka gitunguranye cyangwa guhinduka gahoro.
5. Irashobora gukura itandukanye, ibice byinshi, ibice byinshi hamwe na ultra-thin ibice bifite ibice bihinduka.
6. Iterambere rya Epitaxial rirashobora gukorwa ku bushyuhe buri munsi yo gushonga kwibintu, umuvuduko wo gukura urashobora kugenzurwa, kandi gukura kwa epitaxial yububyimbye bwa atome birashobora kugerwaho.
7.