Iileya ze-epitaxial zinceda njani izixhobo ze-semiconductor?

Imvelaphi yegama elithi epitaxial wafer

Okokuqala, masiyidumise ingcamango encinci: ukulungiswa kwe-wafer kuquka amakhonkco amabini amakhulu: ukulungiswa kwe-substrate kunye nenkqubo ye-epitaxial. I-substrate yi-wafer eyenziwe ngezinto ze-semiconductor single crystal. I-substrate ingangena ngqo kwinkqubo yokwenziwa kwe-wafer ukuvelisa izixhobo ze-semiconductor, okanye ingacutshungulwa ziinkqubo ze-epitaxial ukuvelisa ii-wafer ze-epitaxial. I-Epitaxy ibhekisa kwinkqubo yokukhulisa umaleko omtsha we-crystal enye kwi-substrate enye yekristale ecutshungulwe ngononophelo ngokusika, ukugaya, ukupolisha, njl. I-crystal entsha enye inokuba yinto efanayo ne-substrate, okanye ingaba yinto eyahlukileyo (efanayo) epitaxy okanye i-heteroepitaxy). Ngenxa yokuba umaleko omtsha wekristale uyanda kwaye ukhula ngokwesigaba sekristale se-substrate, ubizwa ngokuba ngumaleko we-epitaxial (ubukhulu budla ngokuba zii-microns ezimbalwa, xa kuthathwa i-silicon njengomzekelo: intsingiselo yokukhula kwe-silicon epitaxial ikwi-substrate yekristale enye yesilicon ene-orientation ethile yekristale. Umaleko wekristale onobume obuhle be-lattice kunye ne-resistivity eyahlukileyo kunye nobukhulu obune-orientation efanayo yekristale njenge-substrate ekhuliswe), kwaye i-substrate ene-epitaxial layer ibizwa ngokuba yi-epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Xa isixhobo senziwe kwi-epitaxial layer, sibizwa ngokuba yi-positive epitaxy. Ukuba isixhobo senziwe kwi-substrate, sibizwa ngokuba yi-reverse epitaxy. Ngeli xesha, umaleko we-epitaxial udlala indima exhasayo kuphela.

I-wafer ekhazimlisiweyo

Iindlela zokukhula kwe-Epitaxial

I-molecular beam epitaxy (MBE): Yiteknoloji yokukhula kwe-semiconductor epitaxial eyenziwa phantsi kweemeko eziphezulu kakhulu ze-vacuum. Kule ndlela, izinto ezisisiseko ziyakhutshwa zibe ngumphunga ngendlela ye-beam yee-athomu okanye ii-molecules zize zibekwe kwi-crystalline substrate. I-MBE yiteknoloji yokukhula kwefilimu encinci ye-semiconductor echanekileyo kakhulu nelawulekayo enokulawula ngokuchanekileyo ubukhulu bezinto ezibekwe kwinqanaba le-athomu.
I-Metal organic CVD (MOCVD): Kwinkqubo ye-MOCVD, i-organic metal kunye ne-hydride gas igesi i-N equlethe izinto ezifunekayo inikezelwa kwi-substrate kubushushu obufanelekileyo, idlule kwi-chemical reaction ukuze ivelise izinto ezifunekayo ze-semiconductor, kwaye ifakwa kwi-substrate, ngelixa iikhompawundi eziseleyo kunye neemveliso ze-reaction zikhutshwa.
I-vapor phase epitaxy (VPE): I-vapor phase epitaxy yitekhnoloji ebalulekileyo esetyenziswa kakhulu ekuveliseni izixhobo ze-semiconductor. Umgaqo osisiseko kukuthutha umphunga wezinto ezisisiseko okanye iikhompawundi kwigesi ethwala, kunye nokufaka iikristale kwi-substrate ngokusebenzisa ii-chemical reactions.

Zeziphi iingxaki ezisombululwa yinkqubo ye-epitaxy?

Zizinto zekristale ezizininzi kuphela ezingenakukwazi ukuhlangabezana neemfuno ezikhulayo zokwenza izixhobo ezahlukeneyo ze-semiconductor. Ke ngoko, ukukhula kwe-epitaxial, iteknoloji yokukhula kwezinto zekristale ezizincinci, yaphuhliswa ekupheleni kowe-1959. Ngoko ke, yintoni igalelo elithile elinalo iteknoloji ye-epitaxy ekuphuculeni izinto?

Kwi-silicon, xa kwaqala iteknoloji yokukhula kwe-silicon epitaxial, yayilixesha elinzima ngokwenene kwimveliso yee-transistors ze-silicon eziphezulu kunye nee-transistors ezinamandla aphezulu. Ngokwembono yemigaqo ye-transistor, ukuze kufunyanwe i-frequency ephezulu kunye namandla aphezulu, i-voltage yokuqhekeka kwendawo yomqokeleli kufuneka ibe phezulu kwaye ukumelana nochungechunge kufuneka kube kuncinci, oko kukuthi, ukuhla kwe-voltage yokugcwala kufuneka kube kuncinci. Eyokuqala ifuna ukuba ukumelana kwezinto kwindawo yokuqokelela kufanele kube phezulu, ngelixa eyesibini ifuna ukuba ukumelana kwezinto kwindawo yokuqokelela kufanele kube kuphantsi. La maphondo mabini ayaphikisana. Ukuba ubukhulu bezinto kwindawo yomqokeleli buncitshisiwe ukuze kuncitshiswe ukumelana nochungechunge, i-silicon wafer iya kuba ncinci kakhulu kwaye ibe buthathaka ukuba ingacutshungulwa. Ukuba ukumelana kwezinto kuncitshisiwe, kuya kuphikisana nemfuneko yokuqala. Nangona kunjalo, uphuhliso lwetekhnoloji ye-epitaxial luye lwaphumelela.

Isisombululo: Khulisa umaleko we-epitaxial oqinileyo kakhulu kwi-substrate exineneyo kakhulu, uze wenze isixhobo kwi-epitaxial umaleko. Lo maleko we-epitaxial oqinileyo kakhulu uqinisekisa ukuba ityhubhu ine-voltage ephezulu yokuqhekeka, ngelixa i-substrate exineneyo kakhulu ikwanciphisa ukumelana kwe-substrate, ngaloo ndlela inciphisa ukuhla kwe-voltage yokugcwala, ngaloo ndlela isombulula impikiswano phakathi kwezi zimbini.

Ukongeza, iitekhnoloji ze-epitaxy ezifana ne-vapor phase epitaxy kunye ne-liquid phase epitaxy ye-GaAs kunye nezinye izinto ze-III-V, II-VI kunye nezinye izixhobo ze-molecular compound semiconductor nazo ziye zaphuhliswa kakhulu kwaye ziye zaba sisiseko sezixhobo ezininzi ze-microwave, izixhobo ze-optoelectronic, amandla. Yiteknoloji yenkqubo eyimfuneko ekuvelisweni kwezixhobo, ingakumbi ukusetyenziswa ngempumelelo kwe-molecular beam kunye ne-metal organic vapor phase epitaxy technology kwiileya ezincinci, ii-superlattices, ii-quantum wells, ii-strained superlattices, kunye ne-atomic-level thin-layer epitaxy, eli linyathelo elitsha kuphando lwe-semiconductor. Uphuhliso "lobunjineli bebhanti yamandla" kweli candelo lubeke isiseko esiqinileyo.

Kwiindlela ezisebenzayo, izixhobo ze-semiconductor ze-wide bandgap zihlala zenziwa kumaleko we-epitaxial, kwaye i-silicon carbide wafer ngokwayo isebenza kuphela njenge-substrate. Ke ngoko, ulawulo lomaleko we-epitaxial yinxalenye ebalulekileyo yeshishini le-wide bandgap semiconductor.

Izakhono ezisi-7 eziphambili kwitekhnoloji ye-epitaxy

1. Iileya ze-epitaxial ezinokumelana okuphezulu (okuphantsi) zinokukhuliswa ngokwe-epitaxial kwiindawo eziphantsi (eziphezulu) ezinokumelana okuphezulu.
2. Umaleko we-epitaxial wohlobo lwe-N (P) ungakhuliswa kwi-substrate yohlobo lwe-P (N) ukuze kwenziwe i-PN junction ngokuthe ngqo. Akukho ngxaki yokuhlawula xa usebenzisa indlela yokusasaza ukwenza i-PN junction kwi-substrate enye yekristale.
3. Idibene netekhnoloji yemaski, ukukhula kwe-epitaxial okukhethayo kwenziwa kwiindawo ezikhethiweyo, okudala iimeko zokuveliswa kweesekethe ezidibeneyo kunye nezixhobo ezinezakhiwo ezikhethekileyo.
4. Uhlobo kunye noxinzelelo lwe-doping lunokutshintshwa ngokweemfuno ngexesha lenkqubo yokukhula kwe-epitaxial. Utshintsho kuxinzelelo lunokuba lutshintsho olukhawulezileyo okanye utshintsho olucothayo.
5. Ingakhula iikhompawundi ezahlukeneyo, ezineeleya ezininzi, ezineenxalenye ezininzi kunye neeleya ezincinci kakhulu ezineenxalenye eziguquguqukayo.
6. Ukukhula kwe-Epitaxial kunokwenziwa kubushushu obuphantsi kuneqondo lokunyibilika kwezinto, izinga lokukhula liyalawuleka, kwaye ukukhula kwe-epitaxial kobukhulu be-atomic-level kunokufezekiswa.
7. Ingakhulisa izinto zekristale enye ezingenakutsalwa, ezifana neGaN, iileya zekristale enye zeekhompawundi zetertiary kunye nequaternary, njl.njl.