Cov txheej epitaxial pab cov khoom siv semiconductor li cas?

Keeb kwm ntawm lub npe epitaxial wafer

Ua ntej, cia peb ua kom nrov npe rau ib lub tswv yim me me: kev npaj wafer suav nrog ob qhov txuas tseem ceeb: kev npaj substrate thiab cov txheej txheem epitaxial. Lub substrate yog wafer ua los ntawm cov khoom siv semiconductor ib leeg siv lead ua ke. Lub substrate tuaj yeem nkag mus rau hauv cov txheej txheem tsim wafer ncaj qha los tsim cov khoom siv semiconductor, lossis nws tuaj yeem ua tiav los ntawm cov txheej txheem epitaxial los tsim cov wafers epitaxial. Epitaxy hais txog cov txheej txheem ntawm kev loj hlob ib txheej tshiab ntawm cov siv lead ua ke ntawm ib leeg siv lead ua ke uas tau ua tib zoo ua tiav los ntawm kev txiav, sib tsoo, polishing, thiab lwm yam. Lub siv lead ua ke tshiab tuaj yeem yog cov khoom siv tib yam li lub substrate, lossis nws tuaj yeem yog cov khoom siv sib txawv (homogeneous) epitaxy lossis heteroepitaxy). Vim tias cov txheej txheem siv lead ua tshiab txuas ntxiv thiab loj hlob raws li theem siv lead ua ntawm lub substrate, nws hu ua txheej epitaxial (qhov tuab feem ntau yog ob peb microns, coj silicon ua piv txwv: lub ntsiab lus ntawm kev loj hlob ntawm silicon epitaxial yog nyob rau ntawm silicon ib lub substrate siv lead ua nrog qee qhov kev taw qhia siv lead ua. Ib txheej ntawm siv lead ua nrog cov qauv lattice zoo thiab sib txawv resistivity thiab thickness nrog tib qho kev taw qhia siv lead ua raws li lub substrate loj hlob), thiab lub substrate nrog cov txheej epitaxial hu ua epitaxial wafer (epitaxial wafer = epitaxial txheej + substrate). Thaum lub cuab yeej ua rau ntawm txheej epitaxial, nws hu ua zoo epitaxy. Yog tias lub cuab yeej ua rau ntawm lub substrate, nws hu ua rov qab epitaxy. Lub sijhawm no, txheej epitaxial tsuas yog ua lub luag haujlwm txhawb nqa.

Cov wafer ci ntsa iab

Cov txheej txheem loj hlob Epitaxial

Molecular beam epitaxy (MBE): Nws yog ib qho semiconductor epitaxial growth technology ua nyob rau hauv ultra-high vacuum conditions. Hauv cov txheej txheem no, cov khoom siv tau evaporated nyob rau hauv daim ntawv ntawm ib tug beam ntawm atoms los yog molecules thiab ces tso rau ntawm ib tug crystalline substrate. MBE yog ib tug semiconductor thin film growth technology uas meej heev thiab tswj tau uas tuaj yeem tswj tau qhov tuab ntawm cov khoom tso rau ntawm lub atomic level.
Cov Hlau Organic CVD (MOCVD): Hauv cov txheej txheem MOCVD, cov hlau organic thiab hydride roj N2 uas muaj cov ntsiab lus xav tau raug xa mus rau lub substrate ntawm qhov kub thiab txias, dhau los ua tshuaj lom neeg los tsim cov khoom siv semiconductor xav tau, thiab raug tso rau ntawm lub substrate, thaum cov tshuaj sib xyaw thiab cov khoom tshuaj tiv thaiv seem raug tso tawm.
Vapor phase epitaxy (VPE): Vapor phase epitaxy yog ib qho thev naus laus zis tseem ceeb uas siv rau hauv kev tsim cov khoom siv semiconductor. Lub hauv paus ntsiab lus yog thauj cov pa ntawm cov khoom siv lossis cov tshuaj sib xyaw hauv cov roj nqa, thiab tso cov siv lead ua rau ntawm lub substrate los ntawm cov tshuaj lom neeg.

Cov teeb meem dab tsi uas cov txheej txheem epitaxy daws tau?

Tsuas yog cov khoom siv siv lead ua ib leeg xwb thiaj li tsis tuaj yeem ua tau raws li qhov xav tau ntawm kev tsim ntau yam khoom siv semiconductor. Yog li ntawd, kev loj hlob epitaxial, ib txheej nyias nyias ntawm cov khoom siv siv lead ua ib leeg, tau tsim tawm thaum kawg ntawm xyoo 1959. Yog li ntawd, epitaxy technology muaj kev pab tshwj xeeb dab tsi rau kev nce qib ntawm cov ntaub ntawv?

Rau silicon, thaum silicon epitaxial kev loj hlob thev naus laus zis pib, nws yog lub sijhawm nyuaj rau kev tsim cov silicon high-frequency thiab high-power transistors. Los ntawm qhov kev xav ntawm transistor cov ntsiab cai, kom tau txais high frequency thiab high power, qhov tawg voltage ntawm thaj chaw collector yuav tsum siab thiab qhov tsis kam series yuav tsum me me, uas yog, qhov poob voltage saturation yuav tsum me me. Tus thawj yuav tsum tau tias qhov resistivity ntawm cov khoom siv hauv thaj chaw sau yuav tsum siab, thaum qhov kawg yuav tsum tau tias qhov resistivity ntawm cov khoom siv hauv thaj chaw sau yuav tsum qis. Ob lub xeev yog contradictory rau ib leeg. Yog tias qhov tuab ntawm cov khoom siv hauv thaj chaw collector raug txo kom txo qhov tsis kam series, lub silicon wafer yuav nyias thiab tsis muaj zog kom ua tiav. Yog tias qhov resistivity ntawm cov khoom siv raug txo, nws yuav tsis sib haum xeeb rau thawj qhov yuav tsum tau ua. Txawm li cas los xij, kev txhim kho ntawm epitaxial technology tau ua tiav. daws qhov teeb meem no.

Kev daws teeb meem: Cog ib txheej epitaxial uas muaj zog tiv taus siab rau ntawm ib qho substrate uas tsis tshua muaj zog tiv taus, thiab ua rau lub cuab yeej nyob rau ntawm txheej epitaxial. Cov txheej epitaxial uas muaj zog tiv taus siab no ua kom lub raj muaj qhov hluav taws xob tawg siab, thaum cov substrate uas tsis muaj zog tiv taus qis kuj txo qhov tsis kam ntawm cov substrate, yog li txo qhov hluav taws xob poob qis, yog li daws qhov kev tsis sib haum xeeb ntawm ob qho.

Ntxiv rau, cov thev naus laus zis epitaxy xws li vapor phase epitaxy thiab kua theem epitaxy ntawm GaAs thiab lwm yam III-V, II-VI thiab lwm yam khoom siv molecular compound semiconductor kuj tau tsim kho zoo heev thiab tau dhau los ua lub hauv paus rau feem ntau cov khoom siv microwave, optoelectronic devices, fais fab Nws yog ib qho txheej txheem thev naus laus zis tseem ceeb rau kev tsim cov khoom siv, tshwj xeeb tshaj yog kev siv cov txheej txheem molecular beam thiab hlau organic vapor phase epitaxy hauv cov txheej nyias nyias, superlattices, quantum wells, strained superlattices, thiab atomic-level thin-layer epitaxy, uas yog ib kauj ruam tshiab hauv kev tshawb fawb semiconductor. Kev txhim kho ntawm "energy belt engineering" hauv daim teb tau tso lub hauv paus ruaj khov.

Hauv kev siv ua haujlwm, cov khoom siv semiconductor dav dav feem ntau yog ua rau ntawm txheej epitaxial, thiab cov silicon carbide wafer nws tus kheej tsuas yog ua lub substrate xwb. Yog li ntawd, kev tswj hwm ntawm txheej epitaxial yog ib feem tseem ceeb ntawm kev lag luam semiconductor dav dav.

7 lub peev xwm tseem ceeb hauv kev siv tshuab epitaxy

1. Cov txheej txheem epitaxial uas tsis kam siab (qis) tuaj yeem loj hlob epitaxially ntawm cov substrates uas tsis kam siab (siab).
2. Cov txheej txheem epitaxial N (P) hom tuaj yeem loj hlob epitaxially ntawm P (N) hom substrate los tsim ib qho PN junction ncaj qha. Tsis muaj teeb meem them nyiaj thaum siv txoj kev diffusion los ua ib qho PN junction ntawm ib qho crystal substrate.
3. Ua ke nrog cov thev naus laus zis npog ntsej muag, kev loj hlob epitaxial xaiv tau ua tiav hauv thaj chaw tshwj xeeb, tsim cov xwm txheej rau kev tsim cov voj voog sib xyaw thiab cov khoom siv nrog cov qauv tshwj xeeb.
4. Hom thiab qhov concentration ntawm doping tuaj yeem hloov pauv raws li qhov xav tau thaum lub sijhawm epitaxial loj hlob. Qhov kev hloov pauv ntawm qhov concentration tuaj yeem yog qhov hloov pauv tam sim ntawd lossis hloov pauv qeeb.
5. Nws tuaj yeem loj hlob heterogeneous, ntau txheej, ntau yam khoom sib xyaw thiab cov txheej nyias nyias nrog cov khoom sib txawv.
6. Kev loj hlob ntawm Epitaxial tuaj yeem ua tiav ntawm qhov kub qis dua qhov melting point ntawm cov khoom, qhov kev loj hlob ntawm tus nqi yog tswj tau, thiab kev loj hlob ntawm epitaxial ntawm atomic-level thickness tuaj yeem ua tiav.
7. Nws tuaj yeem cog cov khoom siv siv lead ua ib leeg uas tsis tuaj yeem rub tawm, xws li GaN, cov txheej siv lead ua ib leeg ntawm cov sib xyaw tertiary thiab quaternary, thiab lwm yam.