Igishyushya cya grafiti Silicon carbide (SiC) Igipfunyika cya SiC gipfundikiye SiC

Igishyushya cya grafiti Silicon carbide (SiC) Igipfunyika cya SiC gitwikiriwe na SiC Ishusho yagaragaye

Ibisobanuro bigufi:

Urutonde rwacu rurimo ibishyushya, ibikoresho byo gutwika, ibikingira ubushyuhe n'ibikoresho bikingira ubushyuhe mu bikorwa byinshi byo guhinga kristu imwe.

Dutanga kandi ibikoresho byo gusukura silicon epitaxy na MOCVD reactors. Tuzwiho gukora neza kandi ku giti cyacu, dutanga ibikoresho byihariye binyuze mu gusukura, gutunganya no gusiga irangi.

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Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Ibisobanuro bya tekiniki	VET-M3
Ubucucike bw'umubyimba (g/cm3)	≥1.85
Ibikubiye mu ivu (PPM)	≤500
Ubukomere bw'Inkombe	≥45
Ubudahangarwa bwihariye (μ.Ω.m)	≤12
Imbaraga zo Kongera Uburemere (Mpa)	≥40
Imbaraga zo Gukanda (Mpa)	≥70
Ingano ya Garama (μm)	≤43
Ingano y'ubushyuhe Mm/°C	≤4.4*10-6

Ibikoresho bishya bigezweho Igishyushya cya Graphite Ibyiza ni ukuzigama ingufu, agaciro kanini n'igiciro gito cyo kubungabunga.

Ibikoresho bishya bigezweho Igishyushya cya Graphite Ibyiza ni ukuzigama ingufu, agaciro kanini n'igiciro gito cyo kubungabunga.

Ibikoresho bishya bigezweho Igishyushya cya Graphite Ibyiza ni ukuzigama ingufu, agaciro kanini n'igiciro gito cyo kubungabunga.

Ibisobanuro birambuye ku gupakira:

Ibikoresho bishya bigezweho Igishyushya cya Graphite Ibyiza ni ukuzigama ingufu, agaciro kanini n'igiciro gito cyo kubungabunga.

Ibanjirije iyi: Igishyushya cya Graphite cyihariye cya Semiconductor Silicon Wafer, SiC coating

Ibikurikira: Igiti cy'ingenzi cya Mould Die Guide Bush, Graphite idafite amavuta, idafite umuringa.

IBICURUZWA BIFITANYE ISANO

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