Isifudumezi se-Graphite I-Silicon carbide (SiC) Isembozo se-SiC I-SiC embozwe

Incazelo emfushane:

Iphothifoliyo yethu ifaka phakathi ama-heater, ama-crucible asekelayo, izivikelo zokushisa kanye nezingxenye zokuvikela izinqubo eziningi nezinto zokukhulisa ikristalu eyodwa.

Siphinde sinikeze ama-susceptor e-silicon epitaxy kanye nama-MOCVD reactors. Saziwa ngekhwalithi yethu ehlala iphezulu kanye nomkhiqizo ohlukile, sinikeza ukuqedwa okuqondene nesicelo ngokuhlanza, ukucubungula ngomshini noma ukumboza.


Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

 

Ukucaciswa Kobuchwepheshe

I-VET-M3

Ubuningi (g/cm3)

≥1.85

Okuqukethwe Komlotha (PPM)

≤500

Ukuqina Kogu

≥45

Ukumelana Okuqondile (μ.Ω.m)

≤12

Amandla Okugobeka (i-Mpa)

≥40

Amandla Okucindezela (i-Mpa)

≥70

Usayizi Ophezulu Wokusanhlamvu (μm)

≤43

I-Coefficient Yokwanda Kokushisa Mm/°C

≤4.4*10-6

 

 

Imikhiqizo emisha yakamuva I-Graphite heater Izinzuzo ziwukonga amandla, inani eliphezulu kanye nezindleko zokulungisa eziphansi.

Imikhiqizo emisha yakamuva I-Graphite heater Izinzuzo ziwukonga amandla, inani eliphezulu kanye nezindleko zokulungisa eziphansi.

Imikhiqizo emisha yakamuva I-Graphite heater Izinzuzo ziwukonga amandla, inani eliphezulu kanye nezindleko zokulungisa eziphansi.

Imininingwane yokupakisha:

Imikhiqizo emisha yakamuva I-Graphite heater Izinzuzo ziwukonga amandla, inani eliphezulu kanye nezindleko zokulungisa eziphansi.


  • Okwedlule:
  • Olandelayo:

  • Ingxoxo ye-WhatsApp eku-inthanethi!