Inenge y'impandeshatu
Ubusembwa butatu ni bwo busembwa bwica cyane mu duce twa SiC epitaxial. Raporo nyinshi z’inyandiko zagaragaje ko ikorwa ry’ubusembwa butatu rifitanye isano n’imiterere ya kristale ya 3C. Ariko, bitewe n’uburyo butandukanye bwo gukura, imiterere y’ubusembwa bwinshi butatu ku buso bw’agace ka epitaxial iratandukanye cyane. Ishobora kugabanywamo ubwoko bukurikira:
(1) Hari inenge y'impandeshatu ifite uduce duto hejuru
Ubu bwoko bw'inenge y'impandeshatu bufite agace kanini k'uruziga hejuru, gashobora guterwa n'ibintu bigwa mu gihe cyo gukura. Agace gato k'impandeshatu gafite ubuso bugoye gashobora kugaragara hepfo uhereye kuri iyi vertex. Ibi biterwa nuko mu gihe cyo gukora epitaxial, ibice bibiri bitandukanye bya 3C-SiC bibaho bikurikirana mu gace k'impandeshatu, aho urwego rwa mbere rushyirwa mu gice cy'impandeshatu kandi rukura binyuze mu nzira ya 4H-SiC. Uko ubunini bw'urwego rwa epitaxial bwiyongera, urwego rwa kabiri rwa 3C polytype nucleates rukura mu mwobo muto w'impandeshatu, ariko intambwe yo gukura ya 4H ntitwikira neza agace ka 3C polytype, bigatuma agace k'umuyoboro ka 3C-SiC gasa n'aka V kakigaragara neza.
(2) Hari utuntu duto hejuru n'uturemangingo tw'impandeshatu dufite ubuso butoshye
Uduce turi ku mpande z'ubu bwoko bw'inenge y'impandeshatu ni duto cyane, nk'uko bigaragara ku Ishusho ya 4.2. Kandi igice kinini cy'impandeshatu gitwikiriwe n'intambwe z'amazi ya 4H-SiC, ni ukuvuga ko urwego rwose rwa 3C-SiC rushyizwe munsi y'urwego rwa 4H-SiC. Intambwe zo gukura za 4H-SiC ni zo zonyine zishobora kugaragara ku buso bw'inenge y'impandeshatu, ariko izi ntambwe ni nini cyane kuruta intambwe zisanzwe zo gukura za 4H crystal.
(3) Ubusembwa butatu bufite ubuso butoshye
Ubu bwoko bw'inenge y'impandeshatu bufite imiterere y'ubuso bworoshye, nk'uko bigaragara ku Ishusho ya 4.3. Kuri bene ubwo busembwa bw'impandeshatu, urwego rwa 3C-SiC rutwikiriwe n'inzira y'intambwe ya 4H-SiC, kandi ishusho ya kristale ya 4H ku buso irushaho kuba nziza kandi yoroshye.
Ubusembwa bw'umwobo wa Epitaxial
Imyobo ya Epitaxial (Imyobo) ni imwe mu myitwarire ikunze kugaragara ku buso, kandi imiterere yayo isanzwe y’ubuso n’imiterere y’imiterere bigaragazwa ku Ishusho ya 4.4. Aho imyobo ya corruption ya TD iherereye nyuma yo gushushanya KOH inyuma y’igikoresho ifite isano igaragara n’aho imyobo ya epitaxial iherereye mbere yo gutegura igikoresho, bigaragaza ko ikorwa ry’imyobo ya epitaxial rifitanye isano no kwimuka kw’imyobo.
inenge za karoti
Ubusembwa bwa karoti ni ubusembwa busanzwe mu bice bya epitaxial bya 4H-SiC, kandi imiterere yabyo isanzwe igaragara ku Ishusho ya 4.5. Ubusembwa bwa karoti buvugwa ko bukorwa n'aho amakosa yo gukusanya Franconian na prismatic ahurira ku gice cy'ibanze gihujwe n'ihindagurika rimeze nk'intambwe. Byavuzwe kandi ko iremwa ry'ubusembwa bwa karoti rifitanye isano na TSD muri substrate. Tsuchida H. n'abandi basanze ubucucike bw'ubusembwa bwa karoti muri epitaxial layer bungana n'ubucucike bwa TSD muri substrate. Kandi mu kugereranya amashusho y'imiterere y'ubuso mbere na nyuma yo gukura kwa epitaxial, ubusembwa bwose bwa karoti bwagaragaye bushobora gusangwa buhuye na TSD muri substrate. Wu H. n'abandi bakoresheje uburyo bwo gupima Raman kugira ngo bamenye ko ubusembwa bwa karoti butari burimo ishusho ya 3C crystal, ahubwo bwari burimo polytype ya 4H-SiC gusa.
Ingaruka z'ubusembwa bwa mpandeshatu ku miterere y'ibikoresho bya MOSFET
Ishusho ya 4.7 ni ishusho igaragaza uko ibintu bitanu bikora igikoresho gifite inenge ya mpandeshatu bikwirakwira. Umurongo w'ubururu ufite utudomo ni umurongo ugabanya imiterere y'igikoresho, naho umurongo utukura ufite utudomo ni umurongo ugabanya imiterere y'igikoresho. Ku kibazo cy'igikoresho, inenge ya mpandeshatu igira ingaruka zikomeye, kandi igipimo cyo gutsindwa kirenze 93%. Ibi ahanini biterwa n'ingaruka z'inenge ya mpandeshatu ku miterere y'inyuma y'ibikoresho. Kugeza kuri 93% by'ibikoresho bifite inenge ya mpandeshatu byongereye cyane gusohoka inyuma. Byongeye kandi, inenge ya mpandeshatu nayo igira ingaruka zikomeye ku miterere y'inyuma y'irembo, aho igipimo cyo kwangirika cya 60%. Nk'uko bigaragara mu mbonerahamwe ya 4.2, ku kwangirika kwa threshold voltage no kwangirika kwa diode y'umubiri, ingaruka z'inenge ya mpandeshatu ni nto, kandi igipimo cyo kwangirika ni 26% na 33%. Ku bijyanye no guteza kwiyongera kwa on-resistance, ingaruka z'inenge ya mpandeshatu ni nke, kandi igipimo cyo kwangirika ni hafi 33%.
Ingaruka z'ubusembwa bw'aho hantu hakorera MOSFET ku miterere y'ibikoresho bya MOSFET
Ishusho ya 4.8 ni ishusho igaragaza uko ibikoresho bitanu bikora igikoresho gifite inenge za epitaxial pit defects bikwirakwira. Umurongo w'ubururu ufite utudomo ni umurongo ugabanya imiterere y'igikoresho, naho umurongo utukura ufite utudomo ni umurongo ugabanya imiterere y'igikoresho. Ibi bigaragarira muri ibi ko umubare w'ibikoresho bifite inenge za epitaxial pit mu gipimo cya SiC MOSFET ungana n'umubare w'ibikoresho bifite inenge za mpandeshatu. Ingaruka z'ingaruka za epitaxial pit defects ku miterere y'igikoresho zitandukanye n'iz'impandeshatu. Ku bijyanye n'intege nke z'igikoresho, igipimo cyangiritse cy'ibikoresho bifite inenge za epitaxial pit defects ni 47% gusa. Ugereranyije n'intege nke z'impandeshatu, ingaruka za epitaxial pit defects ku miterere y'inyuma y'amazi n'imiterere y'irembo ry'igikoresho ziragabanuka cyane, aho igipimo cyangiritse ari 53% na 38%, nk'uko bigaragara mu mbonerahamwe ya 4.3. Ku rundi ruhande, ingaruka za epitaxial pit defects ku miterere ya voltage y'umupaka, imiterere ya diode y'umubiri n'ubudahangarwa bwayo ni nini kuruta iz'impandeshatu, aho igipimo cyangiritse kigera kuri 38%.
Muri rusange, inenge ebyiri z’imiterere y’ibikoresho, ari byo mpandeshatu n’ibice bya epitaxial, bigira ingaruka zikomeye ku gutsindwa no kwangirika kw’ibikoresho bya SiC MOSFET. Kuba hari inenge z’impandeshatu ari byo byica cyane, aho igipimo cyo gutsindwa kigera kuri 93%, ahanini kigaragara nk’ubwiyongere bukabije bw’amazi asohoka inyuma y’igikoresho. Ibikoresho birimo inenge z’ibice bya epitaxial byari bifite igipimo cyo gutsindwa gito cya 47%. Ariko, inenge z’ibice bya epitaxial bigira ingaruka zikomeye ku muvuduko w’amashanyarazi w’igikoresho, imiterere y’imikorere y’umubiri w’ibikoresho ndetse no kudashobora guhagarara kurusha inenge z’impandeshatu.
Igihe cyo kohereza ubutumwa: 16 Mata 2024