Chikanganiso chetatu
Zvikanganiso zvematriangular ndizvo zvinouraya zvikuru muma layers epitaxial eSiC. Mishumo yakawanda yemabhuku yakaratidza kuti kuumbwa kwezvikanganiso zvematriangular kwakabatana nechimiro chekristaro che3C. Zvisinei, nekuda kwenzira dzakasiyana dzekukura, chimiro chezvikanganiso zvakawanda zvematriangular pamusoro pe layer ye epitaxial chakasiyana zvikuru. Chinogona kukamurwa kuita mhando dzinotevera:
(1) Kune zvikanganiso zvetatu-tatu zvine zvidimbu zvikuru pamusoro
Rudzi urwu rwechikanganiso chetriangle rune chidimbu chikuru chakatenderera pamusoro, chinogona kukonzerwa nezvinhu zvinodonha panguva yekukura. Nzvimbo diki yetriangle ine pamusoro wakakombama inogona kuonekwa ichidzika kubva pavertex iyi. Izvi zvinokonzerwa nekuti panguva yekushanda kwe epitaxial, zvidimbu zviviri zvakasiyana zve 3C-SiC zvinoumbwa zvakatevedzana munzvimbo yetriangle, iyo chidimbu chekutanga chinoiswa nucleated panzvimbo inopindirana uye chinokura kuburikidza nekuyerera kwenhanho ye 4H-SiC. Sezvo ukobvu hwe epitaxial layer huchiwedzera, chidimbu chechipiri che 3C polytype nucleates uye chinokura mumakomba madiki etriangle, asi nhanho yekukura ye 4H haifukidze zvakakwana nzvimbo ye 3C polytype, zvichiita kuti nzvimbo ye groove yakaita seV ye 3C-SiC ichiri kuoneka zvakajeka.
(2) Kune zvidimbu zvidiki pamusoro uye zvikanganiso zvetatu zvine pamusoro wakaomarara
Zvidimbu zviri pamucheto werudzi urwu rwechikanganiso chetriangle zvidiki zvikuru, sezvakaratidzwa paMufananidzo 4.2. Uye nzvimbo zhinji yetriangle yakafukidzwa nekuyerera kwematanho e4H-SiC, kureva kuti, 3C-SiC layer yese yakanyudzwa zvizere pasi pe4H-SiC layer. Matanho ekukura e4H-SiC chete ndiwo anogona kuonekwa pamusoro pechikanganiso chetriangle, asi matanho aya akakura kupfuura matanho ekukura e4H crystal enguva dzose.
(3) Zvikanganiso zvematatu zvine pamusoro wakatsetseka
Rudzi urwu rwekukanganisa kwetriangle rune chimiro chakatsetseka pamusoro, sezvakaratidzwa paMufananidzo 4.3. Pakukanganisa kwakadaro kwetriangle, 3C-SiC layer inofukidzwa nekuyerera kwematanho e4H-SiC, uye chimiro chekristaro che4H pamusoro chinokura chakapfava uye chakatsetseka.
Kukanganisika kwegomba reEpitaxial
Makomba eEpitaxial (Makomba) ndeimwe yezvikanganiso zvinowanzoonekwa pamusoro pemakomba, uye maitiro avo epamusoro uye chimiro chechimiro zvinoratidzwa muMufananidzo 4.4. Nzvimbo yemakomba ekuputika kwetambo (TD) anoonekwa mushure mekuchekwa kweKOH kumashure kwechishandiso ine hukama hwakajeka nenzvimbo yemakomba eepitaxial usati wagadzira mudziyo, zvichiratidza kuti kuumbwa kwemakomba eepitaxial kune chekuita nekubviswa kwemakomba.
zvikanganiso zvekaroti
Kukanganisika kwemakaroti idambudziko rinowanzoitika mu4H-SiC epitaxial layers, uye chimiro chayo chakajairika chinoratidzwa muMufananidzo 4.5. Kukanganisika kwemakaroti kunonzi kwakagadzirwa nekusangana kweFranconian neprismatic stacking faults dziri pa basal plane dzakabatana ne step-like dislocations. Zvakataurwawo kuti kuumbwa kwezvikaroti zvinokanganisa kwakabatana neTSD mu substrate. Tsuchida H. nevamwe vakaona kuti density yezvikaroti zvinokanganisa mu epitaxial layer inoenderana ne density yeTSD mu substrate. Uye nekuenzanisa mifananidzo ye surface morphology isati yasvika uye yapera epitaxial growth, zvese zvikaroti zvinoonekwa zvinogona kuwanikwa kuti zvinoenderana neTSD mu substrate. Wu H. nevamwe vakashandisa Raman scattering test characterization kuti vaone kuti zvikaroti zvinokanganisa hazvina chimiro che 3C crystal, asi 4H-SiC polytype chete.
Mhedzisiro yezvikanganiso zvetatu pahunhu hweMOSFET mudziyo
Mufananidzo 4.7 ihistogram yehuwandu hwezvinhu zvishanu zvemudziyo une zvikanganiso zvetatu. Mutsetse webhuruu une zvidimbu ndiwo mutsetse unoparadzanisa kuora kwechimiro chemudziyo, uye mutsetse mutsvuku une zvidimbu ndiwo mutsetse unoparadzanisa kukanganisa kwemudziyo. Kana mudziyo ukakundikana, zvikanganiso zvetatu zvine mhedzisiro yakakura, uye mwero wekukundikana wakakura kupfuura 93%. Izvi zvinonyanya kukonzerwa nekukanganisa kwezvikamu zvitatu pahunhu hwekubuda kwemvura kubva mumidziyo. Kusvika 93% yemidziyo ine zvikanganiso zvetatu yakawedzera zvakanyanya kubuda kwemvura kubva mumidziyo. Pamusoro pezvo, zvikanganiso zvetatu zvine mhedzisiro yakakura pahunhu hwekubuda kwemvura kubva mugedhi, nehuwandu hwekuora hwe60%. Sezvakaratidzwa muTafura 4.2, pakuora kwemagetsi emuganho uye kuora kwemuviri, kukanganisa kwezvikamu zvitatu kudiki, uye huwandu hwekuora kwemvura i26% ne33% zvichiteerana. Panyaya yekukonzera kuwedzera kwekusagadzikana, kukanganisa kwezvikanganiso zvetatu hakuna kusimba, uye chiyero chekuora kwemvura inenge 33%.
Mhedzisiro yekukanganisika kwegomba re epitaxial pahunhu hweMOSFET mudziyo
Mufananidzo 4.8 ihistogram yehuwandu hwezvinhu zvishanu zvemudziyo une epitaxial pit defects. Mutsetse webhuruu une madotsi ndiwo mutsetse wekuparadzanisa wekudzikira kwechimiro chemudziyo, uye mutsetse mutsvuku une madotsi ndiwo mutsetse wekuparadzanisa wekutadza kwemudziyo. Zvinogona kuonekwa kubva pane izvi kuti huwandu hwemidziyo ine epitaxial pit defects muSiC MOSFET sample hwakaenzana nehuwandu hwemidziyo ine madotsi matatu. Kukanganisa kwe epitaxial pit defects pachimiro chemudziyo kwakasiyana nekwemadotsi matatu. Panyaya yekukundikana kwemudziyo, mwero wekukundikana kwemidziyo ine epitaxial pit defects i47% chete. Kana tichienzanisa nemadotsi matatu, kukanganisa kwe epitaxial pit defects pachimiro chekubuda kwemvura kumashure uye maitiro ekubuda kwegedhi emudziyo kwakaderera zvakanyanya, nechiyero chekuora kwe53% ne38% zvichiteerana, sezvakaratidzwa muTafura 4.3. Kune rumwe rutivi, kukanganisa kwe epitaxial pit defects pachimiro chemagetsi emuganho, maitiro ekufambisa diode yemuviri uye on-resistance kwakakura kupfuura kwemadotsi matatu, nechiyero chekuora chichisvika 38%.
Kazhinji, zvikanganiso zviviri zvechimiro, zvinoti matriangles nemapits epitaxial, zvine simba guru pakukundikana uye kuora kwezvishandiso zveSiC MOSFET. Kuvapo kwezvikanganiso zvetriangles ndiko kunouraya zvakanyanya, nechiyero chekukundikana chakakwira kusvika 93%, chinonyanya kuoneka sekuwedzera kukuru kwekubuda kwemvura kubva mumudziyo. Zvishandiso zvine zvikanganiso zvepit epitaxial zvaive nechiyero chekukundikana chakaderera che47%. Zvisinei, zvikanganiso zvepit epitaxial zvine simba guru pamagetsi emudziyo, hunhu hwe diode conduction yemuviri uye kusakwanisa kupindira pane zvikanganiso zvetriangular.
Nguva yekutumira: Kubvumbi-16-2024