2 Natiijooyinka tijaabada ah iyo dood
2.1Lakabka epitaxialdhumuc iyo isku midnimo
Dhumucda lakabka epitaxial, fiirsashada daawada iyo isku midnimada ayaa ka mid ah tilmaamayaasha asaasiga ah ee lagu qiimeeyo tayada waferada epitaxial. Dhumucda si sax ah loo xakameyn karo, fiirsashada daawada iyo isku midnimada waferka ayaa ah furaha lagu hubinayo waxqabadka iyo isku dheelitirkaQalabka korontada ee SiC, iyo dhumucda lakabka epitaxial iyo isku-darka diiradda doping-ka ayaa sidoo kale ah saldhigyo muhiim ah oo lagu cabbiro awoodda habka ee qalabka epitaxial.
Jaantuska 3aad wuxuu muujinayaa isku mid ahaanshaha dhumucda iyo qalooca qaybinta ee 150 mm iyo 200 mmWaferada epitaxial-ka ee SiC. Waxaa laga arki karaa sawirka in qalooca qaybinta ee lakabka epitaxial uu si siman u yahay barta dhexe ee waferka. Waqtiga habka epitaxial waa 600s, celceliska dhumucda lakabka epitaxial ee waferka epitaxial ee 150mm waa 10.89 um, iyo isku-dhafka dhumucduna waa 1.05%. Xisaabinta, heerka koritaanka epitaxial waa 65.3 um/h, taas oo ah heer caadi ah oo habka epitaxial degdeg ah. Waqtiga habka epitaxial isla, dhumucda lakabka epitaxial ee waferka epitaxial ee 200 mm waa 10.10 um, isku-midnimada dhumucduna waa 1.36%, heerka koritaanka guudna waa 60.60 um/h, kaas oo wax yar ka hooseeya heerka koritaanka epitaxial ee 150 mm. Tani waxay sabab u tahay in ay jirto khasaare muuqda oo jidka ku jira marka isha silikoonka iyo isha kaarboonku ay ka soo qulqulaan qulqulka sare ee qolka falcelinta iyada oo loo marayo dusha sare ee wafer ilaa qaybta hoose ee qolka falcelinta, aagga waferka 200 mm-na uu ka weyn yahay 150 mm. Gaasku wuxuu dhex maraa dusha sare ee waferka 200 mm masaafo dheer, gaaska isha ee la isticmaalo inta lagu jiro jidka ayaa ka badan. Xaaladda ah in waferku uu sii socdo, dhumucda guud ee lakabka epitaxial waa mid khafiif ah, sidaas darteed heerka koritaanka ayaa gaabis ah. Guud ahaan, isku-dhafka dhumucda waferka epitaxial ee 150 mm iyo 200 mm waa mid aad u fiican, awoodda habka ee qalabkuna waxay dabooli kartaa shuruudaha aaladaha tayada sare leh.
2.2 Xoogga daawada lakabka epitaxial iyo isku mid ahaanshaha
Jaantuska 4aad wuxuu muujinayaa isku-midnimada diiradda daawada iyo qaybinta qalooca ee 150 mm iyo 200 mm.Waferada epitaxial-ka ee SiCSida laga arki karo sawirka, qalooca qaybinta fiirsashada ee ku yaal waferka epitaxial wuxuu leeyahay isku dheelitirnaan cad marka loo eego bartamaha waferka. Isku mid ahaanshaha fiirsashada doping ee lakabka epitaxial ee 150 mm iyo 200 mm waa 2.80% iyo 2.66% siday u kala horreeyaan, kaas oo lagu xakameyn karo 3% gudahood, taas oo ah heer aad u fiican qalabka caalamiga ah ee la midka ah. Qalooca fiirsashada doping ee lakabka epitaxial waxaa loo qaybiyaa qaab "W" oo ku teedsan jihada dhexroorka, kaas oo inta badan lagu go'aamiyo goobta socodka ee foornada epitaxial ee derbiga kulul ee toosan, sababtoo ah jihada socodka hawada ee foornada koritaanka epitaxial ee hawada toosan waxay ka timaadaa dhammaadka hawada (kor) waxayna ka soo baxdaa dhammaadka hoose si laminar ah iyada oo loo marayo dusha sare ee waferka; sababtoo ah heerka "dhimista jidka" ee isha kaarboonka (C2H4) ayaa ka sarreeya kan isha silikoonka (TCS), marka waferku wareego, C/Si dhabta ah ee dusha sare ee waferku si tartiib tartiib ah ayuu hoos ugu dhacaa geeska ilaa bartamaha (isha kaarboonka ee ku jirta bartamaha waa ka yar tahay), sida laga soo xigtay "aragtida booska tartanka" ee C iyo N, fiirsashada doping-ka ee bartamaha waferku si tartiib tartiib ah ayuu hoos ugu dhacaa geeska, si loo helo isku mid ahaanshaha fiirsashada oo aad u fiican, geeska N2 waxaa lagu daraa magdhow ahaan inta lagu jiro habka epitaxial si loo yareeyo hoos u dhaca fiirsashada doping-ka ee bartamaha ilaa geeska, si qalooca fiirsashada doping-ka ee ugu dambeeya uu u soo bandhigo qaab "W".
2.3 Cilladaha lakabka epitaxial
Marka laga soo tago dhumucda iyo xoojinta daawada, heerka xakamaynta cilladaha lakabka epitaxial sidoo kale waa halbeeg asaasi ah oo lagu cabbiro tayada waferada epitaxial iyo tilmaame muhiim ah oo ku saabsan awoodda habka ee qalabka epitaxial. Inkasta oo SBD iyo MOSFET ay leeyihiin shuruudo kala duwan oo ku saabsan cilladaha, cilladaha qaab-dhismeedka dusha sare ee muuqda sida cilladaha hoos u dhaca, cilladaha saddexagalka, cilladaha karooto, cilladaha comet, iwm. waxaa lagu qeexaa cilladaha dilaaga ah ee aaladaha SBD iyo MOSFET. Suurtagalnimada fashilka jajabyada ka kooban cilladahaan waa mid sare, sidaa darteed xakamaynta tirada cilladaha dilaaga ah aad ayey muhiim u tahay hagaajinta wax soo saarka jajabka iyo yaraynta kharashyada. Jaantuska 5 wuxuu muujinayaa qaybinta cilladaha dilaaga ah ee waferada epitaxial ee 150 mm iyo 200 mm SiC. Iyada oo shuruuddu tahay inaysan jirin dheelitir la'aan cad oo ku jirta saamiga C/Si, cilladaha karootada iyo cilladaha comet ayaa asal ahaan la tirtiri karaa, halka cilladaha hoos u dhaca iyo cilladaha saddexagalka ay la xiriiraan xakamaynta nadaafadda inta lagu jiro hawlgalka qalabka epitaxial, heerka wasakhda qaybaha garaafka ee qolka falcelinta, iyo tayada substrate-ka. Shaxda 2, waxaa laga arki karaa in cufnaanta cilladaha dilaaga ah ee 150 mm iyo 200 mm ee wafer-ka epitaxial lagu xakameyn karo 0.3 walxood/cm2, taas oo ah heer aad u fiican oo loogu talagalay isla nooca qalabka. Heerka xakamaynta cufnaanta cilladaha dilaaga ah ee wafer-ka epitaxial 150 mm ayaa ka wanaagsan kan wafer-ka epitaxial 200 mm. Tani waa sababta oo ah habka diyaarinta substrate-ka ee 150 mm ayaa ka bisil badan kan 200 mm, tayada substrate-ka ayaa ka fiican, heerka xakamaynta wasakhda ee qolka falcelinta graphite 150 mm ayaa ka fiican.
2.4 Qalafsanaanta dusha sare ee wafer-ka epitaxial
Jaantuska 6aad wuxuu muujinayaa sawirada AFM ee dusha sare ee 150 mm iyo 200 mm SiC epitaxial wafers. Waxaa laga arki karaa sawirka in xididka dusha sare uu yahay celcelis ahaan qallafsanaanta laba jibbaaran ee Ra oo ah 150 mm iyo 200 mm epitaxial wafers waa 0.129 nm iyo 0.113 nm siday u kala horreeyaan, dusha sare ee lakabka epitaxial-na waa siman yahay iyada oo aan lahayn ifafaale isku-darka tallaabo-makro ah oo muuqda. Ifafaaladdan waxay muujinaysaa in koritaanka lakabka epitaxial uu had iyo jeer ilaaliyo qaabka koritaanka socodka tallaabada inta lagu jiro habka epitaxial-ka oo dhan, mana jiraan isku-darka tallaabo oo dhacaya. Waxaa la arki karaa iyadoo la adeegsanayo habka koritaanka epitaxial ee la hagaajiyay, lakabka epitaxial ee siman waxaa laga heli karaa substrate-yada xagasha hoose ee 150 mm iyo 200 mm.
3 Gunaanad
Waferada epitaxial ee isku-dhafan ee 150 mm iyo 200 mm 4H-SiC ayaa si guul leh loogu diyaariyey substrate-yada gudaha iyadoo la adeegsanayo qalabka koritaanka epitaxial ee 200 mm SiC ee iskiis u horumarsan, waxaana la sameeyay habka epitaxial ee isku-dhafan ee ku habboon 150 mm iyo 200 mm. Heerka koritaanka epitaxial wuxuu ka badnaan karaa 60 μm/h. Iyadoo la buuxinayo shuruudaha epitaxial ee xawaaraha sare leh, tayada waferka epitaxial waa mid aad u fiican. Isku-dhafka dhumucda waferada epitaxial ee 150 mm iyo 200 mm SiC waxaa lagu xakameyn karaa 1.5% gudahood, isku-darka isku-darka waa ka yar 3%, cufnaanta cilladaha dilaaga ah waa ka yar tahay 0.3 walxood/cm2, iyo celceliska xididka qallafsanaanta dusha sare ee epitaxial Ra waa ka yar tahay 0.15 nm. Tilmaamayaasha habka asaasiga ah ee waferada epitaxial waxay ku jiraan heerka horumarsan ee warshadaha.
Isha: Qalabka Gaarka ah ee Warshadaha Elektarooniga ah
Qore: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(Machadka Cilmi-baarista 48-aad ee Shirkadda Kooxda Tiknoolajiyada Elektarooniga ah ee Shiinaha, Changsha, Hunan 410111)
Waqtiga boostada: Sebteembar-04-2024