When silicon carbide crystal grows, the “environment” of the growth interface between the axial center of the crystal and the edge is different, so that the crystal stress on the edge i...
The first generation of semiconductor materials is represented by traditional silicon (Si) and germanium (Ge), which are the basis for integrated circuit manufacturing. They are widely used in low-...
This innate research report representing the global hydrogen fuel cell bipolar plate market is an informative knowledge center, which will subtly hover in the past and current market conditions in ...
In the silicon carbide single crystal growth process, physical vapor transport is the current mainstream industrialization method. For the PVT growth method, silicon carbide powder has a great infl...
The second authorization bill defines a method for calculating life-cycle greenhouse gas emissions from renewable fuels from non-biological sources. The approach takes into account greenhouse gas ...
Fan out wafer level packaging (FOWLP) is a cost-effective method in the semiconductor industry. But the typical side effects of this process are warping and chip offset. Despite the continuous impr...