Generally, the busbar between the output end of the DC graphitization furnace rectifier cabinet and the conductive electrode of the furnace head is called a short net, and the busbar used in the gr...
1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
Reaction-sintered silicon carbide properties and main uses? Silicon carbide can also be called carborundum or fireproof sand, is an inorganic compound, divided into green silicon carbide and black ...
Silicon carbide covalent bond is very strong, still has high strength bonding at high temperature, this structural characteristic gives silicon carbide ceramics excellent strength, high hardness, w...
Silicon carbide coating, commonly known as SiC coating, refers to the process of applying a layer of silicon carbide onto surfaces through methods such as Chemical Vapor Deposition (CVD), Physical ...