Ifektri Ethengisa iChina Polished Silicon Carbide Sisic Grinding Barrel Shape Sic Tube yokugaya iMill

I-China Polished Silicon Carbide Sisic Grinding Barrel Shape Sic Tube for Grinding Mill Umfanekiso Ovezweyo

Inkcazo emfutshane:

Indawo Yokuqala:iTshayina

Ulwakhiwo lwekristale:Isigaba se-FCCβ

Uxinano:3.21 g/cm;

Ubunzima:IiVickers ezingama-2500;

Ubungakanani bengqolowa:2 ~ 10μm;

Ucoceko lweeKhemikhali:99.99995%;

Umthamo wobushushu:640J·kg-1·K-1;

Ubushushu bokunyibilikisa:2700℃;

Amandla e-Felexural:415 Mpa (RT 4-Point);

IModulus kaYoung:430 Gpa (ukugoba kwe-4pt, 1300℃);

Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1;

Ukuqhuba kwe-Thermal:300（W/MK）;

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Konke esikwenzayo kusoloko kunxulumene nemfundiso yethu. "Umthengi kuqala, Yiba nokuzithemba kokuqala, uzinikele ekupakisheni ukutya kunye nokukhuselwa kwendalo kwiFektri ethengisa iSilicon Carbide Sisic Grinding Barrel Shape Sic Tube yokugaya iMill, Siyamkela ngokufudumeleyo abathengi, imibutho kunye nabahlobo abavela kuyo yonke indawo emhlabeni ukuba banxibelelane nathi kwaye bacele intsebenziswano ukuze kubekho iingenelo ezifanayo.
Konke esikwenzayo kusoloko kunxulumene nemfundiso yethu. "Umthengi kuqala, Yiba nokuzithemba kokuqala, uzinikele ekupakisheni ukutya kunye nokukhuselwa kwendaloItyhubhu yokuHonisa yaseTshayina iSAE1026, Ityhubhu ehonjisiweyo ye-S45c, Imveliso yethu ithunyelwe kumazwe angaphezu kwama-30 nakwiindawo ezikufutshane njengemveliso yokuqala ngexabiso eliphantsi. Siyabamkela ngokunyanisekileyo abathengi basekhaya nakwamanye amazwe ukuba beze kuthetha-thethana nathi ngeshishini.
Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabele kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko wokukhusela we-SIC.

Iimpawu eziphambili:

1. Ukumelana ne-oxidation yobushushu obuphezulu:

Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.

2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

Iinkcukacha eziphambili zeCVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lwekristale	Isigaba se-β se-FCC
Uxinano	g/cm³	3.21
Ukuqina	Ubulukhuni bukaVickers	2500
Ubungakanani bengqolowa	μm	2~10
Ucoceko lweeKhemikhali	%	99.99995
Umthamo wobushushu	J·kg-1 ·K-1	640
Ubushushu bokunyibilikisa	℃	2700
Amandla eFeleksiyuramu	I-MPa (RT-point 4)	415
IModulus yoLutsha	I-Gpa (i-4pt bend, 1300℃)	430
Ukwandiswa kobushushu (i-CTE)	10-6K-1	4.5
Ukuqhuba kobushushu	(W/mK)	300