Ukuhlolwa koMgangatho we-China Industrial Polycrystalline Diamond Powder 3-6um yeSapphire Wafer

Inkcazo emfutshane:

Indawo Yokuqala:iTshayina

Ulwakhiwo lwekristale:Isigaba se-FCCβ

Uxinano:3.21 g/cm;

Ubunzima:IiVickers ezingama-2500;

Ubungakanani bengqolowa:2 ~ 10μm;

Ucoceko lweeKhemikhali:99.99995%;

Umthamo wobushushu:640J·kg-1·K-1;

Ubushushu bokunyibilikisa:2700℃;

Amandla e-Felexural:415 Mpa (RT 4-Point);

IModulus kaYoung:430 Gpa (ukugoba kwe-4pt, 1300℃);

Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1;

Ukuqhuba kwe-Thermal:300（W/MK）;

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

"Ukunyaniseka, Ubuchule, Ukuqina, kunye nokusebenza kakuhle" yingcamango eqhubekayo yenkampani yethu yexesha elide yokuphuhlisa kunye nabathengi ukuze kubekho ukuhambelana okufanayo kunye neenzuzo ezifanayo zoVavanyo loMgangatho kwi-China Industrial Polycrystalline.Umgubo weDayimaneI-3-6um yeSapphire Wafer, Siqinisekile ukuba singabonelela ngeemveliso ezikumgangatho ophezulu kunye nezisombululo ngexabiso elifanelekileyo, inkxaso ephezulu emva kokuthengisa kubathengi. Kwaye siza kwakha ixesha elide elinomdla.
"Ukunyaniseka, Ubuchule, Ukuqina, kunye nokusebenza kakuhle" yingcamango eqhubekayo yenkampani yethu yokuphuhlisa ixesha elide kunye nabathengi ukuze kubekho ukufana kunye nokuxhamla kunyeIdayimani yokwenziwa yaseTshayina, Umgubo weDayimane, Sisoloko sigxininisa kwimigaqo yolawulo ethi “Umgangatho uphambili, iTekhnoloji isisiseko, ukunyaniseka kunye nokuvelisa izinto ezintsha”. Siyakwazi ukuphuhlisa iimveliso ezintsha ngokuqhubekayo ukuya kwinqanaba eliphezulu ukwanelisa iimfuno ezahlukeneyo zabathengi.
Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabele kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko wokukhusela we-SIC.

Iimpawu eziphambili:

1. Ukumelana ne-oxidation yobushushu obuphezulu:

Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.

2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

Iinkcukacha eziphambili zeCVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lwekristale	Isigaba se-β se-FCC
Uxinano	g/cm³	3.21
Ukuqina	Ubulukhuni bukaVickers	2500
Ubungakanani bengqolowa	μm	2~10
Ucoceko lweeKhemikhali	%	99.99995
Umthamo wobushushu	J·kg-1 ·K-1	640
Ubushushu bokunyibilikisa	℃	2700
Amandla eFeleksiyuramu	I-MPa (RT-point 4)	415
IModulus yoLutsha	I-Gpa (i-4pt bend, 1300℃)	430
Ukwandiswa kobushushu (i-CTE)	10-6K-1	4.5
Ukuqhuba kobushushu	(W/mK)	300