I-China Factory Ithengisa I-China Polished Silicon Carbide Sisic Grinding Barrel Shape Sic Tube Yokugaya Umshini Wokugaya

Incazelo emfushane:


  • Indawo Yokuqala:IShayina
  • Isakhiwo sekristalu:Isigaba se-FCCβ
  • Ubuningi:3.21 g/cm;
  • Ubulukhuni:AmaVickers angu-2500;
  • Usayizi Wezinhlamvu:2 ~ 10μm;
  • Ukuhlanzeka Kwamakhemikhali:99.99995%;
  • Amandla Okushisa:640J·kg-1·K-1;
  • Izinga Lokushisa Lokuncibilikisa:2700℃;
  • Amandla e-Felexural:415 Mpa (RT 4-Point);
  • I-Modulus kaYoung:430 Gpa (ukugoba okungu-4pt, 1300℃);
  • Ukwanda Kokushisa (i-CTE):4.5 10-6K-1;
  • Ukuqhuba Ukushisa:300(W/MK);
  • Imininingwane Yomkhiqizo

    Amathegi Omkhiqizo

    Konke esikwenzayo kuhlale kuhlobene nemfundiso yethu. "Iklayenti kuqala, Yiba nokuzethemba kokuqala, uzinikele ekupakisheni ukudla kanye nokuvikelwa kwemvelo kwe-Factory Selling China Polished Silicon Carbide Sisic Grinding Barrel Shape Sic Tube for Grinding Mill, Samukela ngemfudumalo amakhasimende, izinhlangano zezinhlangano kanye nabangane abavela kuyo yonke indawo emhlabeni ukuthi baxhumane nathi futhi bacele ukubambisana ukuze bathole izinzuzo ezifanayo.
    Konke esikwenzayo kuhlale kuhlobene nemfundiso yethu. "Iklayenti kuqala, Yiba nokuzethemba kokuqala, uzinikele ekupakisheni ukudla kanye nokuvikelwa kwemvelo kwalokhu."I-China SAE1026 Honing Tube, Ishubhu Elihlotshisiwe le-S45c, Umkhiqizo wethu uthunyelwe emazweni nasezifundeni ezingaphezu kuka-30 njengomthombo otholakala ngqo ngentengo ephansi kakhulu. Siyawamukela ngobuqotho amakhasimende avela ekhaya nakwamanye amazwe ukuthi eze ukuzoxoxisana nathi ngebhizinisi.
    Incazelo Yomkhiqizo

    Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC.

    Izici eziyinhloko:

    1. Ukumelana nokushisa okuphezulu kwe-oxidation:

    ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.

    2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

    3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.

    Imininingwane Eyinhloko Yokumboza kwe-CVD-SIC

    Izakhiwo ze-SiC-CVD

    Isakhiwo sekristalu Isigaba se-β se-FCC
    Ubuningi g/cm³ 3.21
    Ubulukhuni Ubulukhuni bukaVickers 2500
    Usayizi Wezinhlamvu μm 2~10
    Ukuhlanzeka Kwamakhemikhali % 99.99995
    Amandla Okushisa J·kg-1 ·K-1 640
    Izinga Lokushisa Lokuthuthwa Kwezinto Ezincane 2700
    Amandla e-Felexural I-MPa (RT-amaphuzu angu-4) 415
    I-Young's Modulus I-Gpa (ukugoba okungu-4pt, 1300℃) 430
    Ukwanda Kokushisa (i-CTE) 10-6K-1 4.5
    Ukuqhuba kwe-thermal (W/mK) 300

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