Ukuveliswa kwamandla e-solar photovoltaic kuye kwaba lishishini elitsha lamandla elithembisayo kwihlabathi. Xa kuthelekiswa neeseli zelanga ze-polysilicon kunye ne-silicon e-amorphous, i-monocrystalline silicon, njengesixhobo sokuvelisa amandla e-photovoltaic, inamandla okuguqula i-photoelectric aphezulu kunye neenzuzo ezibalaseleyo zorhwebo, kwaye iye yaba yeyona nto iphambili ekuveliseni amandla e-solar photovoltaic. I-Czochralski (CZ) yenye yeendlela eziphambili zokulungiselela i-monocrystalline silicon. Ukwakhiwa kwe-Czochralski monocrystalline furnace kubandakanya inkqubo ye-furnace, inkqubo ye-vacuum, inkqubo yegesi, inkqubo ye-thermal field kunye nenkqubo yolawulo lombane. Inkqubo ye-thermal field yenye yezona meko zibalulekileyo zokukhula kwe-monocrystalline silicon, kwaye umgangatho we-monocrystalline silicon uchaphazeleka ngokuthe ngqo kukusasazwa kwe-gradient yobushushu yentsimi ye-thermal.
Izinto ezikwintsimi yobushushu zenziwe ikakhulu zizinto zekhabhoni (izinto zegrafiti kunye nezinto ezidityanisiweyo zekhabhoni/khabhoni), ezahlulwe zibe ziindawo ezixhasayo, iindawo ezisebenzayo, izinto zokufudumeza, iindawo ezikhuselayo, izinto zokugquma ubushushu, njl.njl., ngokwemisebenzi yazo, njengoko kubonisiwe kuMfanekiso 1. Njengoko ubungakanani be-silicon ye-monocrystalline buqhubeka busanda, iimfuno zobungakanani bezinto ezikwintsimi yobushushu nazo ziyanda. Izinto ezidityanisiweyo zekhabhoni/khabhoni ziba lolona khetho lokuqala lwezinto ezikwintsimi yobushushu ze-silicon ye-monocrystalline ngenxa yokuzinza kwayo okulinganayo kunye neempawu zayo ezintle zoomatshini.
Kwinkqubo ye-czochralcian monocrystalline silicon, ukunyibilika kwezinto ze-silicon kuya kuvelisa umphunga we-silicon kunye ne-silicon splash enyibilikisiweyo, okubangela ukubola kwezinto ze-carbon/carbon thermal field, kwaye iimpawu zoomatshini kunye nobomi benkonzo yezinto ze-carbon/carbon thermal field zichaphazeleka kakhulu. Ke ngoko, indlela yokunciphisa ukubola kwezinto ze-carbon/carbon thermal field kunye nokuphucula ubomi bazo benkonzo iye yaba yenye yezinto ezixhaphakileyo kubavelisi be-silicon ye-monocrystalline kunye nabavelisi bezinto ze-carbon/carbon thermal field.Ugqubuthelo lwe-silicon carbideiye yaba lolona khetho luphambili lokukhusela ubushushu be-carbon/carbon ngenxa yokumelana kwayo nobushushu kunye nokuguguleka kwayo.
Kule phepha, ukususela kwizixhobo zentsimi yobushushu bekhabhoni/khabhoni ezisetyenziswa kwimveliso ye-silicon e-monocrystalline, iindlela eziphambili zokulungiselela, iingenelo kunye nokungalungi kokufakwa kwe-silicon carbide ziyaziswa. Ngesi siseko, ukusetyenziswa kunye nenkqubela yophando yokufakwa kwe-silicon carbide kwizixhobo zentsimi yobushushu bekhabhoni/khabhoni kuphononongwa ngokweempawu zezinto zentsimi yobushushu bekhabhoni/khabhoni, kwaye iingcebiso kunye nemiyalelo yophuhliso yokukhuselwa kokufakwa komphezulu kwezixhobo zentsimi yobushushu bekhabhoni/khabhoni ziyabekwa phambili.
1 Itekhnoloji yokulungiselelai-silicon carbide coating
1.1 Indlela yokushumeka
Indlela yokufaka idla ngokusetyenziswa ukulungiselela uqweqwe lwangaphakathi lwe-silicon carbide kwinkqubo yezinto ezidityanisiweyo ze-C/C-sic. Le ndlela kuqala isebenzisa umgubo oxutyiweyo ukusonga izinto ezidityanisiweyo ze-carbon/carbon, ize emva koko ithathe unyango lobushushu kubushushu obuthile. Uthotho lweempendulo ezintsonkothileyo ze-physico-chemical lwenzeka phakathi komgubo oxutyiweyo kunye nomphezulu wesampuli ukwenza uqweqwe. Inzuzo yayo kukuba le nkqubo ilula, yinkqubo enye kuphela enokulungiselela izinto ezidityanisiweyo ze-matrix ezingenaziqhekeko; Utshintsho oluncinci lobungakanani ukusuka kwi-preform ukuya kwimveliso yokugqibela; Ifanelekile nakweyiphi na isakhiwo esiqinisiweyo sefayibha; I-gradient ethile yokwakheka inokwenziwa phakathi koqweqwe kunye ne-substrate, edityaniswe kakuhle ne-substrate. Nangona kunjalo, kukwakho neengxaki, ezifana nokusabela kweekhemikhali kubushushu obuphezulu, okunokonakalisa ifayibha, kunye neempawu zoomatshini ze-carbon/carbon matrix eziyanciphayo. Ukufana koqweqwe kunzima ukulawula, ngenxa yezinto ezifana nomxhuzulane, okwenza uqweqwe lungalingani.
1.2 Indlela yokugquma uludaka
Indlela yokugquma i-slurry kukuxuba izinto zokugquma kunye ne-binder zibe ngumxube, uxube ngokulinganayo phezu komphezulu we-matrix, emva kokomisa kwindawo engenanto, isampuli egqunyiweyo iyatshiswa kubushushu obuphezulu, kwaye ukugquma okufunekayo kunokufumaneka. Iingenelo zezokuba inkqubo ilula kwaye kulula ukuyisebenzisa, kwaye ubukhulu bokugquma kulula ukulawula; Ingxaki kukuba kukho amandla amabi okubopha phakathi kokugquma kunye ne-substrate, kwaye ukumelana nokutsha kobushushu kokugquma kuphantsi, kwaye ukufana kokugquma kuphantsi.
1.3 Indlela yokusabela ngomphunga weekhemikhali
Indlela ye-chemical vapor reaction (CVR) yindlela yenkqubo ekhupha izinto ze-silicon eziqinileyo zibe ngumphunga we-silicon kubushushu obuthile, uze emva koko umphunga we-silicon usasazeke ungene ngaphakathi nakumphezulu we-matrix, uze uphendule kwindawo ene-carbon kwi-matrix ukuze kuveliswe i-silicon carbide. Iingenelo zayo ziquka umoya ofanayo kwi-oven, izinga lokuphendula elihambelanayo kunye nobukhulu be-deposition yezinto ezigqunyiweyo kuyo yonke indawo; Le nkqubo ilula kwaye kulula ukuyisebenzisa, kwaye ubukhulu be-coating bunokulawulwa ngokutshintsha uxinzelelo lomphunga we-silicon, ixesha lokufaka kunye nezinye iiparameter. Ingxaki kukuba isampuli ichaphazeleka kakhulu yindawo kwi-oven, kwaye uxinzelelo lomphunga we-silicon kwi-oven alunakufikelela kwi-theory uniformity, nto leyo ebangela ukuba ubukhulu be-coating bungafani.
1.4 Indlela yokubeka umphunga weekhemikhali
Ukufakwa komphunga wekhemikhali (i-CVD) yinkqubo apho ii-hydrocarbons zisetyenziswa njengomthombo wegesi kunye nobunyulu obuphezulu be-N2/Ar njengegesi yokuthwala ukungenisa iigesi ezixutyiweyo kwi-reactor yomphunga wekhemikhali, kwaye ii-hydrocarbons ziyabola, zenziwe, zisasazwe, zifakwe kwaye zisonjululwe phantsi kobushushu obuthile kunye noxinzelelo ukuze zenze iifilimu eziqinileyo kumphezulu wezinto ezidityanisiweyo zekhabhoni/khabhoni. Inzuzo yayo kukuba uxinano kunye nobunyulu bokugquma kunokulawulwa; Ikwafanelekile kwisixhobo somsebenzi esinemilo eyinkimbinkimbi ngakumbi; Ulwakhiwo lwekristale kunye nemo yomphezulu wemveliso zinokulawulwa ngokulungelelanisa iiparameter zokubeka. Iingxaki kukuba izinga lokubeka liphantsi kakhulu, inkqubo iyinkimbinkimbi, iindleko zemveliso ziphezulu, kwaye kunokubakho iziphene zokufaka, ezifana nokuqhekeka, iziphene ze-mesh kunye neziphene zomphezulu.
Ngamafutshane, indlela yokufaka ilinganiselwe kwiimpawu zayo zobuchwepheshe, ezifanelekileyo ekuphuhlisweni nasekuvelisweni kwezinto zelebhu kunye nezinto ezincinci; Indlela yokugquma ayifanelekanga kwimveliso enkulu ngenxa yokungaguquguquki kwayo. Indlela ye-CVR inokuhlangabezana nemveliso enkulu yeemveliso ezinkulu, kodwa ineemfuno eziphezulu zezixhobo kunye netekhnoloji. Indlela ye-CVD yindlela efanelekileyo yokulungiselelaUkwaleka kwe-SIC, kodwa ixabiso layo liphezulu kunendlela ye-CVR ngenxa yobunzima bayo ekulawuleni inkqubo.
Ixesha lokuthumela: Februwari-22-2024