Ukubonelela nge-OEM yaseTshayina eGqwesileyo yeSilicon eluhlaza yeSilicon Carbide yeBonded Coated

Ukubonelela nge-OEM yaseTshayina Egqwesileyo yeSilicon eluhlaza yeSilicon yeCarbide yeBonded Coated Featured Image

Inkcazelo emfutshane:

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing. I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inombolo yoMfanekiso:

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukuhlangabezana nolwaneliseko olulindelwe ngabathengi, sineqela lethu elomeleleyo lokubonelela ngeyona nkxaso ingaphezulu kwayo yonke into ebandakanya ukuthengisa, ingeniso, ukuza, imveliso, ulawulo olugqwesileyo, ukupakisha, indawo yokugcina impahla kunye nokuhanjiswa kwe-OEM yaseTshayina Egqwesileyo yeSic Green Silicon Carbide ye-Bonded Coated Abrasives, umgangatho ophezulu, ngaphandle kwenkonzo egqwesileyo yentsimi, yonke into ekumgangatho ophezulu ngaphandle kwenkonzo egqwesileyo yelizwe kunye ne-Ag. ukhuphiswano olumandla.

Izinto eziluncedo ezikhethekileyo ze-SiC-coated graphite susceptors ziquka ukucoceka okuphezulu kakhulu, ukugquma okulinganayo kunye nobomi benkonzo obugqwesileyo. Kananjalo banokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.

I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing Atmosphere

Isicelo:

Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGraphite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ikhabhoni ibonelela ngezinto zokurhafisa kunye namalungu egraphite kuzo zonke iireactors zangoku ze-epitaxy. Ipotfoliyo yethu ibandakanya i-barrel susceptors kwi-application kunye neeyunithi ze-LPE, i-pancake susceptors ye-LPE, i-CSD, kunye neeyunithi ze-Gemini, kunye ne-single-wafer susceptors kwi-application kunye neeyunithi ze-ASM.Ngokudibanisa intsebenziswano eqinile kunye nee-OEM ezikhokelayo, ubuchule bezinto eziphathekayo kunye nolwazi lokuvelisa, i-VET inikezela ngoyilo olufanelekileyo lwesicelo sakho.