Ukulethwa Okusha kwe-2” 3” 4” 6” Inch 6H Semi-insulating Silicon Carbide SiC Wafer Substrate

Ukulethwa Okusha kwe-2” 3” 4” 6” Intshi 6H I-Semi-insulating Silicon Carbide SiC Wafer Substrate Isithombe Esifakiwe

Incazelo emfushane:

Indawo Yomsuka:E-Zhejiang, China (Mainland)

Inombolo Yemodeli:Inombolo Yemodeli:

Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Ikhwalithi:Iphelele

Umsebenzi:I-CVD-SiC

Isicelo:I-Semiconductor / Photovoltaic

Ukuminyana:3.21 g/cc

Ukunwetshwa kwe-thermal:4 10-6/K

Umlotha: <5ppm

Isampula:Iyatholakala

Ikhodi ye-HS:6903100000

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Sinalesi siqubulo, manje sesikhule saba phakathi kwabakhiqizi okungenzeka ukuthi bathuthuke kakhulu kwezobuchwepheshe, ababiza izindleko, nabancintisana namanani entengo ye-New Delivery engu-2” 3” 4” 6” Inch 6H Semi-insulating Silicon Carbide SiC Wafer Substrate, Njengoba siyinkampani yethu esencane ethuthukayo, kungenzeka ukuthi asizuzisi kakhulu, kodwa kungenzeka ukuthi asizuzisi kakhulu.
Sinalesi siqubulo, manje sesikhule saba phakathi kwabakhiqizi abangaba namasu amasha kwezobuchwepheshe, angabizi kakhulu, futhi abancintisana namanani entengo ye-, Silwela ukwenza kahle, ukuthuthukiswa okuqhubekayo kanye nokuqamba okusha, sizibophezele ukusenza “ukwethenjwa kwekhasimende” kanye “nokukhethwa kokuqala komkhiqizo wezisekeli zemishini yobunjiniyela” abahlinzeki. Sikhethe, wabelane ngesimo sokuwina-win!

Ukufakwa kwe-SiC ye-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye enobumsulwa obuphakeme kanye nokumelana nomoya we-oxidizing. I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

I-SiC coating/coated MOCVD Susceptor

Izici: · Ukumelana Nokushisa Okumangalisayo Okuhle Kakhulu · Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba · Ukumelana Namakhemikhali Okuhle Kakhulu · Ukuhlanzeka Okuphakeme Kakhulu · Ukutholakala Ngokuma Okuyinkimbinkimbi · Kusetshenziswa ngaphansi kwe-Oxidizing Atmosphere

Izici Ezijwayelekile Ze-Base Graphite Material:

Ukuminyana Okubonakalayo:	1.85 g/cm3
Ukungazweli Kagesi:	11 μΩm
I-Flexural Strenth:	49 MPa (500kgf/cm2)
Ukuqina Kwasogwini:	58
Umlotha:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

I-SiC coating/coated MOCVD Susceptor

Imikhiqizo eminingi

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