I-Silicon Carbide Coated Graphite Substrate ye-Semiconductor, i-MOCVD Susceptor

Incazelo emfushane:

I-VET Energy SiC Coated Susceptor iwumkhiqizo osebenza kahle kakhulu owenzelwe ukunikeza ukusebenza okulinganayo nokuthembekile isikhathi eside. Inokumelana okuhle kakhulu nokushisa kanye nokufana kokushisa, ubumsulwa obuphezulu, ukumelana nokuguguleka, okwenza kube yisisombululo esifanele sezinhlelo zokusebenza zokucubungula i-wafer.

Indawo Yokusuka:E-Zhejiang, China (Mainland)

Ukwakheka Kwamakhemikhali:I-graphite embozwe yi-SiC

Amandla okugobeka:470Mpa

Ukuqhuba kwe-thermal:300 W/mK

Ikhwalithi:Kuphelele

Umsebenzi:I-CVD-SiC

Isicelo:I-semiconductor/i-Photovoltaic

Ubuningi:3.21 g/cc

Ukwandiswa kokushisa:4 10-6/K

Umlotha: <5ppm

Isampula:Kuyatholakala

Ikhodi ye-HS:6903100000

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-VET Energy SiC Coated Susceptoriyisisombululo esisebenza kahle kakhulu esakhiwe ngokucophelela ukuze sinikeze ukusebenza okuthembekile nokungaguquguquki kuyo yonke impilo ende, sihlangabezana nezidingo eziqinile zokukhiqiza ama-semiconductor. Lo mkhiqizo ulungele abathwali be-wafer be-MOCVD kanye nezinye izinhlelo zokusebenza zokucubungula ama-wafer ezidinga ukuzinza nokunemba. Ukumelana kwawo nokuguguleka okuqinile kwenza kube ukukhetha okuhle kakhulu ezindaweni lapho ukuqina nokuqina kwamakhemikhali kubalulekile khona.

OkwethuI-SiC Coated Graphite SusceptorIyingxenye ebalulekile enqubweni yokukhiqiza ye-semiconductor, isebenzisa ubuchwepheshe obukhethekile obunelungelo lobunikazi be-VET Energy ukuze kufezwe ubumsulwa obuphezulu kakhulu, ukufana okuphezulu kokumboza, kanye nokuqina kokushisa okumangalisayo. Ukumboza kuthuthukisa i-substrate ye-graphite ngokumelana okuphezulu kwamakhemikhali kanye nokuphila kwesikhathi eside kakhulu kwenkonzo. Ukuzinikela kwe-VET Energy ekhwalithini kuholele ku-susceptor ene-SiC ehlangabezana nezidingo ezishintshayo zemakethe yokuthwala i-graphite wafer, ibeka izinga eliphezulu lama-susceptor ane-SiC ambozwe yi-graphite asetshenziswa kuIzinqubo ze-MOCVD.

Izici Eziyinhloko Zama-SiC Coated Susceptors:

1. Ukumelana ne-Oxidation Yokushisa Okuphezulu:Imelana namazinga okushisa afinyelela ku-1700℃, okwenza ifaneleke ezimweni zokucubungula ezimbi kakhulu.

2. Ukuhlanzeka Okuphezulu kanye Nokulingana Kokushisa:Iqinisekisa imiphumela ehambisanayo, ebalulekileAma-susceptors e-MOCVDkanye nezinye izinhlelo zokusebenza ezinembile.

3. Ukumelana Okuhle Kakhulu Kokugqwala:Iyakwazi ukumelana ne-asidi, i-alkali, usawoti, kanye nezinye izinto eziphilayo ezahlukahlukene.

4. Ukuqina Komphezulu Okuthuthukisiwe:Ubuso obuncane obunezinhlayiya ezincane ezinikeza ukuqina okuphezulu kanye nokuphila isikhathi eside.

5. Impilo Yesevisi Eyengeziwe:Yakhelwe ukusebenza okuqhubekayo, isebenza kangcono kunezinzwa ezijwayelekile ezimbozwe nge-silicon carbide ezindaweni zokucubungula ezinzima.

Njengomkhiqizi ohamba phambili, i-VET Energy igxile ku-graphite eyenziwe ngokwezifiso kanyeimikhiqizo ye-silicon carbidengezinketho ezahlukene zokumboza, okuhlanganisaUkugqoka kwe-SiC, Ukugqoka kwe-TaC, ukugqoka ikhabhoni okunjengengilazi, kanye ne-pyrolytic carbon coating. Sizinikela ngokuziqhenya ezimbonini ze-semiconductor kanye ne-photovoltaic, siletha ama-susceptor e-silicon carbide coated graphite ahlangabezana nezidingo ezithile zokusebenza.

Ithimba lethu lobuchwepheshe, elinolwazi oluvela ezikhungweni zocwaningo zasekhaya eziphezulu, lizinikele ekuthuthukiseni izixazululo zezinto ezibonakalayo zezidingo ezishintshayo zeIsivikelo se-graphite esimbozwe yi-SiCImakethe. Ngenqubo yethu enelungelo lobunikazi, i-VET Energy ithuthukise ubuchwepheshe obuhlukile obuthuthukisa kakhulu amandla okubopha phakathi kwe-silicon carbide coating kanye ne-substrate, kunciphisa ingozi yokuqhekeka futhi kuthuthukise ukuthembeka kwesikhathi eside.

Izicelo kanye Nezinzuzo Ekucubungulweni Kwe-Semiconductor

IIsembozo se-SiC se-MOCVDkwenzaumsusi we-graphiteizingxenye zokugcina ubuqotho ngaphansi kwezimo zokushisa okuphezulu kanye nokugqwala, okubalulekile ekukhiqizweni kwe-semiconductor okunembile. Lezi zingxenye ze-graphite ezimbozwe yi-SiC zibaluleke kakhulu ezinqubweni ezidinga ama-susceptor ambozwe yi-silicon carbide ukuzeabathwali be-graphite wafer, ezidinga ukuqina okuphezulu kokushisa, ubumsulwa, kanye nokumelana nokuguguleka kwamakhemikhali.

Ngezindlela zethu zokumboza i-silicon carbide ezithuthukisiwe, i-VET Energy iyaqhubeka nokusekela imakethe ye-graphite wafer carrier ngokuletha ukusebenza okwenziwe ngokwezifiso, okuphezulu.Ama-susceptor e-graphite ambozwe yi-SiCezibhekana nezinselele ezithile embonini, kusukela ezinqubweni ze-MOCVD kuya ekusetshenzisweni okuhlanzekile kakhulu emkhakheni we-semiconductor.