SiC single crystal is a Group IV-IV compound semiconductor material composed of two elements, Si and C, in a stoichiometric ratio of 1:1. Its hardness is second only to diamond.
The carbon reducti...
Currently, the SiC industry is transforming from 150 mm (6 inches) to 200 mm (8 inches). In order to meet the urgent demand for large-size, high-quality SiC homoepitaxial wafers in the industry, 15...
The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...
The EU’s newly published enabling law, which defines green hydrogen, has been welcomed by the hydrogen industry as bringing certainty to the investment decisions and business models of EU co...
In aerospace and automotive equipment, electronics often operate at high temperatures, such as aircraft engines, car engines, spacecraft on missions near the sun, and high-temperature equipment in ...
Fan out wafer level packaging (FOWLP) is a cost-effective method in the semiconductor industry. But the typical side effects of this process are warping and chip offset. Despite the continuous impr...