1. Third-generation semiconductors
The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of tr...
Progress and economic analysis of hydrogen production by electrolysis of solid oxides
Solid oxide electrolyzer (SOE) uses high-temperature water vapor (600 ~ 900°C) for electrolysis, which is more ...
Non-uniformity of ion bombardment
Dry etching is usually a process that combines physical and chemical effects, in which ion bombardment is an important physical etching method. During the etchin...
According to a statement from the European Commission, the first enabling Act defines the necessary conditions for hydrogen, hydrogen-based fuels or other energy carriers to be classified as renewa...
Silicon Carbide Materials are used in a wide variety of industries and applications such as sealing components, blasting nozzles, sliding bearings, and flow reactors. Silicon carbide is an effectiv...
Introduction of Silicon Carbide
Silicon carbide (SIC) has a density of 3.2g/cm3. Natural silicon carbide is very rare and is mainly synthesized by artificial method. According to the different clas...