No ke aha he mea nui nā waʻa wafer seramika SiC no ka Semiconductor Diffusion a me nā umu oxidation

I ka hoʻomau ʻana o nā kaʻina hana semiconductor e ulu aʻe i nā nui wafer nui aʻe, nā waihona hoʻolālā wela paʻa, a me nā ʻae ʻana i nā hemahema haʻahaʻa, ua lilo nā mea i hoʻohana ʻia i loko o nā lako hana wela kiʻekiʻe i mea koʻikoʻi. Ma waena o kēia mau mea hoʻopau koʻikoʻi a me nā ʻāpana kūkulu, ua puka mai nā waʻa wafer keramika silicon carbide (SiC) ma ke ʻano he hoʻokahi o nā ʻenehana hiki ke hoʻokō nui i nā ʻōnaehana diffusion a me ka umu oxidation hou.

I nā wahi hana semiconductor holomua, hoʻopili pololei lākou i ka like ʻana o ka thermal, ka hana ʻāpana, ka hoʻolaha ʻana o ka wafer stress, ke kūpaʻa o ke kaʻina hana, a ma ka hopena, ka hua o ka hāmeʻa.

ʻOi aku hoʻi i ka hana ʻana o ka wafer 300mm, ka hana ʻana o ka semiconductor mana, a me ka hana ʻana o ka semiconductor hanauna ʻekolu, ke pani koke nei nā waʻa wafer ceramic silicon carbide i nā ʻōnaehana lawe kuʻuna i hoʻokumu ʻia i ka quartz ma muli o ko lākou mau waiwai thermal a me mechanical kiʻekiʻe.

He aha ka waʻa wafer keramika silicon carbide?

ʻO ka waʻa wafer keramika silicon carbide kahi ʻano halihali wafer wela kiʻekiʻe i hana ʻia me nā keramika silicon carbide holomua. ʻO kāna kumu nui ka kākoʻo palekana a me ka lawe ʻana i nā wafers semiconductor he nui ma o nā ʻōnaehana umu kū a pae paha i ka wā o nā hana mālama wela.

Aia i loko o kahi waʻa wafer maʻamau nā lua wafer i hana ʻia me ka pololei i hoʻolālā ʻia e mālama i ka mamao wafer i kāohi nui ʻia i ka wā o ka hana ʻana. Ma muli o ka noi, hiki i ke ʻano ke komo pū me nā kaola kākoʻo, nā lima cantilever, nā geometries i hoʻomaikaʻi ʻia i ka ea, a me nā ʻāpana hoʻoikaika māmā i hoʻolālā ʻia e hōʻemi i ka nui o ka wela.

I loko o nā ʻōnaehana umu semiconductor, lawelawe pono nā waʻa wafer ma ke ʻano he pilina ma waena o nā wafers a me ke kaiapuni hana wela. Ke hoʻomau nei ka emi ʻana o nā ana o ka hāmeʻa i nā kikowaena ʻenehana holomua, hiki i nā microscopic instability i loko o ke ʻano kākoʻo wafer ke hoʻopilikia i ka hana hou ʻana a me ka hana hemahema.

ʻO kēia kekahi o nā kumu e hoʻohana nui nei nā mea hana umu kapuahi holomua i nā ʻāpana seramika silicon carbide maʻemaʻe kiʻekiʻe ma kahi o nā ʻōnaehana quartz fused kuʻuna.

Ke Kūlanasma nā ʻōnaehana hoʻolaha a me ka oxidation furnace

ʻO ka hoʻolaha ʻana a me ka oxidation kekahi o nā kaʻina hana thermal koʻikoʻi loa i ka hana semiconductor. Hoʻohana nui ʻia kēia mau kaʻina hana no ka hoʻoulu ʻana o ka dopant, ka ulu ʻana o ka oxide thermal, ka annealing, ka hoʻolaha ʻana o ka drive-in, a me ka hoʻokumu ʻana o dielectric.

ʻO nā mahana hana maʻamau mai kahi o 900°C a i 1200°C ma muli o ke kemika hana a me nā koi o ka hāmeʻa. I kekahi mau noi semiconductor mana holomua a i ʻole nā ​​​​​​polokalamu SiC, hiki i nā pōʻaiapuni thermal ke ʻoi aku ma mua o 1300°C.

Ma lalo o kēia mau kūlana, pono ka waʻa wafer e mālama i ke kūpaʻa o ka dimensional ma luna o nā pōʻaiapuni wela hoʻolōʻihi ʻia me ka hoʻēmi ʻana i ka haumia a me ka mālama ʻana i ka mamao wafer like.

Ua hoʻohana lōʻihi ʻia nā waʻa wafer quartz kuʻuna i nā umu hoʻolaha ma muli o ko lākou maʻemaʻe kiʻekiʻe a me ke kumukūʻai haʻahaʻa. Eia nō naʻe, hōʻike nā mea quartz i ka conductivity thermal haʻahaʻa - ma kahi o 1.4 W/m·K ma ka mahana o ka lumi.

I ka hoʻohālikelike ʻana, hōʻike pinepine nā keramika silicon carbide i nā waiwai conductivity thermal mai kahi o 120 ~ 200 W/m·K ma muli o ka papa a me ka microstructure.

Hoʻomaikaʻi nui kēia ʻokoʻa nui i ka like ʻana o ka mahana ma loko o ka ukana o ka umu.

ʻO ke alakaʻi wela kiʻekiʻe e hiki ai:

● Hoʻomehana wafer like hou aku

● Hoʻemi ʻia nā gradients wela

● Hoʻomaikaʻi ʻia ke kūlike o ka wafer-a-wafer

● Hōʻiliʻili haʻahaʻa o ke koʻikoʻi wela

● Hoʻemi ʻia nā hopena lihi i ka wā o ka oxidation a i ʻole ka diffusion

I ka hana ʻana o ka semiconductor holomua, kahi e hoʻomau ai ka hāiki ʻana o nā puka makani hana, hoʻopili pololei kēia mau hoʻomaikaʻi i ka like ʻana o ka kiʻiʻoniʻoni a me ke kūlike o ka hana uila.

Hāʻawi pū nā waʻa wafer SiC i ka paʻakikī mechanical kiʻekiʻe loa i hoʻohālikelike ʻia me nā hale quartz. Ke lilo nei kēia i mea nui i nā ʻōnaehana umu kū pololei e hana ana i nā pūʻulu nui o nā wafers 300 mm, kahi e hiki ai i ka lōʻihi o ka waʻa a me ka ukana mechanical ke lilo i mea nui.

ʻO ka hoʻemi ʻia ʻana o ka deformation e kōkua i ka mālama ʻana i ka mamao wafer pololei a me ke ʻano kahe kinoea paʻa ma o ke kaʻina hana thermal.

Nā Waiwai Kino Koʻikoʻi o nā Waʻa Wafer Ceramic Silicon Carbide

ʻO ka ulu ʻana o ka kaulana o nā waʻa wafer silicon carbide ma muli nui o ka hui pū ʻana o nā waiwai thermal, mechanical, a me nā kemika o nā keramika silicon carbide.

Nā ʻano kino koʻikoʻi

Hiki i kēia mau waiwai ke mālama i nā ʻano keramika silicon carbide e mālama i ke kūpaʻa dimensional ma lalo o ka hoʻolōʻihi ʻana o ka thermal cycle, ʻoiai e hoʻomaka paha nā ʻāpana quartz kuʻuna e palupalu a hoʻololi paha.

ʻO ke kiʻekiʻe o ka ʻoʻoleʻa o ka silicon carbide e hōʻemi ana i ka haʻalulu a me ka paʻa ʻole o ka mechanical i ka wā e hoʻouka ai a hoʻokuʻu ana i nā wafers i loko o ka umu.

Nā ʻAno Mea Nui no nā Waʻa Wafer Silicon Carbide

Hana ʻia nā waʻa wafer silicon carbide hou me ka hoʻohana ʻana i nā ʻano ʻenehana mea like ʻole, i hoʻonohonoho pono ʻia kēlā me kēia no nā ʻano hana kikoʻī a me nā koi kumukūʻai kūpono.

Hoʻohana nui ʻia ka silicon carbide i hoʻopili hou ʻia (RSiC) i nā noi umu wela kiʻekiʻe ma muli o kona maʻemaʻe maikaʻi loa a me ke kūpaʻa wela. ʻAʻole koi ke kaʻina hana no RSiC i ka hoʻohui ʻana o nā nui o nā mea kōkua sintering, kahi e kōkua ai i ka hoʻēmi ʻana i ka pilikia o ka haumia i nā wahi semiconductor.

Hāʻawi ka silicon carbide sintered-reaction (RBSC a i ʻole RBSiC) i ka ikaika mechanical kiʻekiʻe a me nā kumukūʻai hana haʻahaʻa. Eia nō naʻe, hiki i ke silicon manuahi koena i loko o ke ʻano ke hōʻemi i kona kūpaʻa i ka corrosion i kekahi mau kaʻina hana corrosive.

No nā noi semiconductor holomua, ke lilo nei nā ʻōnaehana graphite i uhi ʻia me ka silicon carbide CVD i mea maʻamau. I loko o kēia mau hale, hāʻawi ka substrate graphite i ke kākoʻo mechanical māmā, ʻoiai ʻo ka uhi silicon carbide deposition vapor deposition (CVD) kiʻekiʻe-maʻemaʻe e hana i ka interface kaʻina hana.

He haʻahaʻa loa nā helu hana ʻāpana o nā uhi silicon carbide CVD a me ka maʻemaʻe kūikawā, e hoʻolilo ana iā lākou i mea hoihoi loa no ka hana logic holomua a me ka semiconductor mana. Eia nō naʻe, pono e hoʻomalu pono ʻia ka kūpaʻa o ka uhi ʻana a me nā coefficients mismatched o ka hoʻonui thermal e pale aku i ka haki a i ʻole ka delamination i ka wā o ka hoʻopōʻaiapuni thermal hou.

Nā Pilikia Kaʻina Hana Maʻamau

ʻOiai nā pono hana o nā waʻa wafer keramika silicon carbide, ke kū nei lākou i nā pilikia he nui i nā wahi hana semiconductor maoli.

ʻO ka haumia ʻana o nā ʻāpana kekahi o nā pilikia koʻikoʻi loa. I ka emi ʻana o ka nui o nā hāmeʻa, ke lilo nei ka pohō hua i hoʻokumu ʻia e nā ʻāpana i mea koʻikoʻi. ʻOiai nā ʻōpala submicron i loaʻa mai nā microcracks, delamination coating, a i ʻole ka hōʻino ʻana o ka ʻili hiki ke hana i nā hemahema make ma nā wafers holomua.

ʻO ka haki ʻana o ke koʻikoʻi wela kekahi pilikia lōʻihi. ʻOiai he kūpaʻa wela maikaʻi loa ka silicon carbide, he mea seramika palupalu ia. ʻO ka hoʻomehana wikiwiki ʻana a i ʻole ka like ʻole o ka mahana kūloko hiki ke alakaʻi i nā māwae ma nā kihi kūkulu, nā ʻauwaha wafer, a i ʻole nā ​​​​​​huina beam.

Hiki i ka hoʻololi wela lōʻihi ke alakaʻi i ka hoʻololi mālie a i ʻole ke kolo ʻana, ʻoi aku hoʻi i nā waʻa wafer nui i hoʻohana ʻia i nā ʻōnaehana umu kū pololei. ʻOiai nā loli geometric liʻiliʻi hiki ke hoʻololi i ka wafer spacing a me ke ʻano like o ke kahe kinoea, a laila e hoʻopilikia ai i ka kaohi mānoanoa o ka oxide a me ke kūlike o ka hoʻolaha dopant.

ʻO ka delamination uhi CVD kekahi pilikia hilinaʻi koʻikoʻi i nā ʻōnaehana SiC i uhi ʻia. No ka mea, hōʻike ka substrate graphite a me ka uhi SiC i nā ʻano hoʻonui wela like ʻole, ʻo ka hoʻokele wela kiʻekiʻe e alakaʻi hope loa i ka hōʻiliʻili ʻana o ke kaumaha ma ka interface.

Hopena

I loko o nā ʻōnaehana hoʻolaha semiconductor a me ka umu oxidation, he kuleana koʻikoʻi ko nā waʻa wafer keramika silicon carbide i ka mālama ʻana i ke kūpaʻa wela, ka kaohi ʻana i ka haumia, a me ka hōʻoia ʻana i ke kūlike o ke kaʻina hana ma lalo o nā kūlana hana ʻino loa. ʻO ko lākou conductivity wela kiʻekiʻe, ka paʻakikī mechanical maikaʻi loa, ke kūpaʻa wela kiʻekiʻe, a me ke kūpaʻa kemika e hoʻolilo iā lākou i mea nui loa i ka hana semiconductor holomua.

I ka hoʻomau ʻana o ka ulu ʻana o nā ʻenehana hana semiconductor, e lilo ana i mea paʻakikī, a e ʻoi aku ka paʻakikī o nā koi kaohi kīnā, e hoʻomau wale ana ke koʻikoʻi o nā ʻōnaehana lawe wafer keramika holomua. I loko o nā hale hana hou, hiki ke hoʻihoʻi ʻia nā pilikia he nui e pili ana i ka kaohi ʻāpana, ka like ʻana o ka wela, a me ka hilinaʻi i ka pilina ma waena o ke ʻano kaʻapuni wela, ka paʻa o nā mea, a me ka hoʻolālā ʻana o ka ʻōnaehana lawe wafer.

No laila, ke loli koke nei nā waʻa wafer seramika silicon carbide mai nā lako umu kōkua i nā ʻāpana koʻikoʻi no ka hana ʻana o ka semiconductor hanauna e hiki mai ana.