Kutheni iinqanawa ze-SiC Ceramic Wafer zibalulekile kwi-Semiconductor Diffusion kunye ne-Oxidation Furnaces

Njengoko iinkqubo zokuvelisa ii-semiconductor ziqhubeka zitshintsha ziye kwii-wafer ezinkulu, uhlahlo-lwabiwo mali oluqinileyo lobushushu, kunye nokunyamezelana okuncinci kweziphene, izixhobo ezisetyenziswa ngaphakathi kwezixhobo zenkqubo yobushushu obuphezulu ziye zabaluleka kakhulu. Phakathi kwezi zinto zisetyenziswayo kunye nezinto zokwakha, iinqanawa ze-wafer ze-silicon carbide (SiC) ceramic ziye zavela njengenye yezona teknoloji zibalulekileyo ezivumelayo kwiinkqubo zanamhlanje zokusasazwa kunye ne-oxidation.

Kwiindawo eziphambili zokuvelisa ii-semiconductor, zichaphazela ngokuthe ngqo ukufana kobushushu, ukuveliswa kweesuntswana, ukusasazwa koxinzelelo lwe-wafer, uzinzo lwenkqubo, kwaye ekugqibeleni, imveliso yesixhobo.

Ingakumbi kwimveliso ye-wafer ye-300mm, imveliso ye-power semiconductor, kunye nemveliso ye-semiconductor yesizukulwana sesithathu, iinqanawa ze-wafer ze-silicon carbide ceramic zitshintsha ngokukhawuleza iinkqubo zemveli zokuthwala ezisekwe kwi-quartz ngenxa yeempawu zazo eziphezulu zobushushu nezoomatshini.

Yintoni isikhephe se-silicon carbide ceramic wafer?

Inqanawa ye-silicon carbide ceramic wafer sisakhiwo esithwala i-wafer esishushu kakhulu esenziwe ngee-ceramics eziphucukileyo ezisekelwe kwi-silicon carbide. Injongo yaso ephambili kukuxhasa nokuthutha ngokukhuselekileyo ii-wafers ezininzi ze-semiconductor ngokusebenzisa iinkqubo ze-oven ezithe nkqo okanye ezithe tye ngexesha lemisebenzi yonyango lobushushu.

Isikhephe esiqhelekileyo se-wafer sineendawo ezininzi ze-wafer ezenziwe ngokuchanekileyo ezenzelwe ukugcina isithuba se-wafer esilawulwa kakhulu ngexesha lokucubungula. Ngokuxhomekeke kwisicelo, isakhiwo sinokubandakanya imiqadi yokuxhasa, iingalo ze-cantilever, iijometri eziphuculweyo zokuhamba komoya, kunye namacandelo okuqinisa alula enzelwe ukunciphisa ubunzima bobushushu.

Kwiinkqubo ze-semiconductor furnace, ii-wafer boats zisebenza ngokufanelekileyo njengendawo yokudibanisa ii-wafers kunye nendawo yokucubungula ubushushu. Njengoko ubukhulu besixhobo buqhubeka buncipha ukuya kwiindawo zobuchwepheshe obuphambili, kwanokungazinzi okuncinci ngaphakathi kwesakhiwo senkxaso ye-wafer kunokuchaphazela ukuphindaphinda kwenkqubo kunye nokusebenza kweziphene.

Esi sesinye sezizathu zokuba abavelisi bee-furnace eziphambili basebenzise ngakumbi izinto ze-ceramic ze-silicon carbide ezicocekileyo kakhulu endaweni yeenkqubo ze-quartz ezixutyiweyo zemveli.

IndimaskwiiNkqubo zeSithando soMbane sokuSasazwa kunye nokuOxidation

Ukusasazwa kunye ne-oxidation zihlala ziphakathi kweenkqubo zobushushu ezisisiseko kwimveliso ye-semiconductor. Ezi nkqubo zisetyenziswa kakhulu ekusebenzeni kwe-dopant, ukukhula kwe-thermal oxide, ukufakelwa kwe-annealing, ukusasazwa kwe-drive-in, kunye nokwakheka kwe-dielectric.

Amaqondo obushushu aqhelekileyo okusebenza aqala malunga ne-900°C ukuya kwi-1200°C kuxhomekeke kwikhemistri yenkqubo kunye neemfuno zesixhobo. Kwezinye izixhobo ze-semiconductor zamandla eziphambili okanye izixhobo zeSiC, imijikelo yobushushu ingadlula i-1300°C.

Phantsi kwezi meko, isikhephe se-wafer kufuneka sigcine uzinzo olulinganayo kwimijikelo yobushushu obude ngelixa sinciphisa ungcoliseko kwaye sigcina isithuba se-wafer esifanayo.

Iinqanawa ze-quartz wafer zemveli bezisetyenziswa ixesha elide kwizitofu zokusasaza ngenxa yokuba zicocekile kakhulu kwaye zibiza kancinci. Nangona kunjalo, izixhobo ze-quartz zibonisa ubushushu obuphantsi kakhulu — ngesiqhelo malunga ne-1.4 W/m·K kubushushu begumbi.

Xa kuthelekiswa, iiseramikhi ze-silicon carbide zihlala zibonisa amaxabiso okuqhuba ubushushu aqala malunga ne-120 ~ 200 W/m·K kuxhomekeke kudidi kunye nesakhiwo se-microstructure.

Lo mahluko mkhulu uphucula kakhulu ukufana kobushushu kulo lonke umthwalo wesithando somlilo.

Ukuqhuba okuphezulu kobushushu kwenza:

● Ukufudumeza okufana kakhulu kwe-wafer

● Ukuncipha kwe-thermal gradients

● Ulungelelwano oluphuculweyo phakathi kwewafer newafer

● Ukuqokelelana koxinzelelo oluphantsi lobushushu

● Imiphumo enciphileyo yomphetho ngexesha lokuxinana okanye ukusasazwa

Kwimveliso ye-semiconductor ephucukileyo, apho iifestile zenkqubo ziqhubeka zincipha, olu phuculo luchaphazela ngokuthe ngqo ukufana kwefilimu kunye nokusebenza kombane.

Izikebhe ze-SiC wafer zikwabonelela ngokuqina okuphezulu kakhulu koomatshini xa kuthelekiswa nezakhiwo ze-quartz. Oku kubaluleka ngakumbi kwiinkqubo ze-oven ezithe nkqo ezicubungula iibhetshi ezinkulu ze-wafers ezingama-300 mm, apho ubude besikebhe kunye nomthwalo woomatshini unokuba mkhulu.

Ukuguquguquka okuncitshisiweyo kunceda ukugcina isithuba esichanekileyo se-wafer kunye nokuziphatha okuzinzileyo kokuhamba kwegesi kulo lonke umjikelo wobushushu.

Iimpawu eziphambili zeSilicon Carbide Ceramic Wafer Boats

Ukuthandwa okukhulayo kweenqanawa ze-silicon carbide wafer kungenxa yokudibanisa okukhethekileyo kweempawu zobushushu, zoomatshini, kunye neekhemikhali ze-silicon carbide ceramics.

Iimpawu eziphambili zomzimba

Ezi mpawu zivumela izakhiwo ze-silicon carbide ceramic ukuba zigcine uzinzo olulinganayo phantsi komjikelo wobushushu ohlala ixesha elide, ngelixa izinto ze-quartz zemveli zisenokuqala ukuthamba okanye ukuguquguquka.

Ukuqina okuphezulu kwe-silicon carbide kunciphisa ukungcangcazela kunye nokungazinzi koomatshini ngexesha lokulayisha kunye nokukhupha ii-wafers kwi-oven.

Iintlobo Eziphambili Zezinto Ezisetyenziswayo Kwiinqanawa ZeSilicon Carbide Wafer

Iinqanawa zanamhlanje ze-silicon carbide wafer zenziwe kusetyenziswa iindlela ezahlukeneyo zobuchwepheshe, nganye ilungiselelwe iimeko ezithile zenkqubo kunye neemfuno zokonga imali.

I-recrystalized silicon carbide (RSiC) isetyenziswa kakhulu kwizicelo ze-oven ezishushu kakhulu ngenxa yobunyulu bayo obuhle kunye nokuzinza kobushushu. Inkqubo yokuvelisa i-RSiC ayifuni ukongezwa kwezinto ezininzi ezincedisa ukuthulula, nto leyo enceda ekunciphiseni umngcipheko wongcoliseko kwiindawo ze-semiconductor.

I-reaction-sintered silicon carbide (RBSC okanye RBSiC) inika amandla aphezulu oomatshini kunye neendleko zokuvelisa eziphantsi. Nangona kunjalo, i-residual free silicon kwisakhiwo inokunciphisa ukumelana kwayo nokugqwala kwiindawo ezithile zenkqubo yokugqwala.

Kwizicelo ze-semiconductor eziphambili, iinkqubo ze-graphite ezigqunywe yi-CVD silicon carbide ziya zixhaphaka ngakumbi. Kwezi zakhiwo, i-substrate ye-graphite inika inkxaso elula yoomatshini, ngelixa i-high-purity chemical vapor deposition (CVD) silicon carbide coating yenza i-process interface.

Iingubo ze-CVD silicon carbide zinezinga eliphantsi kakhulu lokuvelisa amasuntswana kunye nobunyulu obugqwesileyo, nto leyo eyenza ukuba zibe nomtsalane kakhulu kwi-logic ephucukileyo kunye ne-power semiconductor manufacturing. Nangona kunjalo, ukuthembeka kwengubo kunye nee-coefficients ezingahambelaniyo zokwandiswa kobushushu kufuneka zilawulwe ngononophelo ukuthintela ukuqhekeka okanye ukwahlukana ngexesha lokujikeleza kobushushu okuphindaphindiweyo.

Imingeni yeNkqubo eqhelekileyo

Nangona iingenelo zokusebenza kwezikhephe ze-silicon carbide ceramic wafer, zisajongene nemingeni emininzi yobunjineli kwiindawo zokwenziwa kwe-semiconductor.

Ungcoliseko lwamasuntswana luhlala lungomnye wemiba ebalulekileyo. Njengoko ubungakanani bezixhobo buncipha, ilahleko yesivuno ebangelwa ngamasuntswana iya isiba mandundu ngakumbi. Kwanenkunkuma engange-submicron ebangelwa kukuqhekeka kwamasuntswana, ukususwa kwe-coating, okanye ukuwohloka komphezulu kunokubangela iziphene ezibulalayo kwii-wafers eziphambili.

Ukuqhekeka koxinzelelo lobushushu ngomnye umceli mngeni osele ukho ixesha elide. Nangona i-silicon carbide inozinzo oluhle kakhulu lobushushu, ihlala iyinto yeseramikhi ebuthathaka. Ukufudumeza ngokukhawuleza okanye ukungalingani kobushushu bendawo kunokukhokelela kwiintanda kwiikona zesakhiwo, kwii-wafer grooves, okanye kwiindlela zokuhlangana kwemitha.

Ukujikeleza kobushushu ixesha elide kunokukhokelela ekuguqukeni kancinci kancinci okanye ekuqhekekeni, ngakumbi kwiinqanawa ezinkulu ze-wafer ezisetyenziswa kwiinkqubo ze-oven ezithe nkqo. Nokuba utshintsho oluncinci lwejometri lunokutshintsha isithuba se-wafer kunye nokufana kokuhamba kwegesi, ngaloo ndlela kuchaphazela ulawulo lobukhulu be-oxide kunye nokuhambelana kokusasazwa kwe-dopant.

Ukwahlukana kwe-CVD coating yenye ingxaki ebalulekileyo yokuthembeka kwiinkqubo ze-SiC ezigqunyiweyo. Ngenxa yokuba i-graphite substrate kunye ne-SiC coating zibonisa iindlela ezahlukeneyo zokwandisa ubushushu, ukujikeleza okuphindaphindiweyo kobushushu obuphezulu ekugqibeleni kukhokelela ekuqokeleleni koxinzelelo kwindawo ehambelanayo.

Isiphelo

Kwiinkqubo ze-semiconductor diffusion kunye ne-oxidation furnace, ii-silicon carbide ceramic wafer boats zidlala indima ebalulekileyo ekugcineni uzinzo lobushushu, ukulawula ungcoliseko, kunye nokuqinisekisa ukufana kwenkqubo phantsi kweemeko zokusebenza ezinzima kakhulu. Ukuqhuba kwazo ubushushu okuphezulu, ukuqina koomatshini okugqwesileyo, ukumelana nobushushu obuphezulu, kunye nozinzo lweekhemikhali kuzenza zibe yeyona nto ibalulekileyo kwimveliso ye-semiconductor ephucukileyo.

Njengoko iteknoloji yeenkqubo ze-semiconductor iqhubeka nokutshintsha, isiya intsonkotha ngakumbi, kwaye iimfuno zolawulo lweziphene zikhula ngakumbi, ukubaluleka kweenkqubo zokuthwala ii-wafer ze-ceramic eziphambili kuya kuqhubeka kusanda. Kwizinto zanamhlanje, imingeni emininzi enxulumene nolawulo lwee-particle, ukufana kobushushu, kunye nokuthembeka ekugqibeleni kunokulandelwa emva kokudibana phakathi kokuziphatha kwe-thermal cycling, ukuzinza kwezinto, kunye noyilo lwenkqubo yokuthwala ii-wafer.

Ngenxa yoko, iinqanawa ze-silicon carbide ceramic wafer boats zitshintsha ngokukhawuleza ukusuka kwizixhobo ze-ovenative furnace zibe zizinto ezibalulekileyo kwimveliso yesizukulwana esilandelayo se-semiconductor.