Kungani Izikebhe Ze-SiC Ceramic Wafer Zibalulekile Ekusabalalisweni Kwe-Semiconductor kanye Nezitofu Zokuxova

Njengoba izinqubo zokukhiqiza ze-semiconductor ziqhubeka nokuguqukela kosayizi abakhulu be-wafer, isabelomali esiqinile sokushisa, kanye nokubekezelelana okuphansi kwamaphutha, izinto ezisetshenziswa ngaphakathi kwemishini yenqubo yokushisa okuphezulu ziye zaba zibaluleke kakhulu. Phakathi kwalezi zinto ezibalulekile ezisetshenziswayo kanye nezingxenye zesakhiwo, izikebhe ze-wafer ze-silicon carbide (SiC) ceramic ziye zavela njengenye yezobuchwepheshe obubaluleke kakhulu obuvumelayo ezinhlelweni zesimanje ze-diffusion kanye ne-oxidation furnace.

Ezindaweni zokukhiqiza ze-semiconductor ezithuthukisiwe, zithinta ngqo ukufana kokushisa, ukukhiqizwa kwezinhlayiya, ukusatshalaliswa kokucindezeleka kwe-wafer, ukuzinza kwenqubo, futhi ekugcineni, ukukhiqizwa kwedivayisi.

Ikakhulukazi ekukhiqizweni kwe-wafer engu-300mm, ekukhiqizweni kwe-power semiconductor, kanye nasekukhiqizweni kwe-semiconductor yesizukulwane sesithathu, izikebhe ze-wafer ze-silicon carbide ceramic zithatha indawo ngokushesha yezinhlelo zendabuko zokuthwala ezisekelwe ku-quartz ngenxa yezakhiwo zazo ezisezingeni eliphezulu lokushisa kanye nelomshini.

Iyini isikebhe se-silicon carbide ceramic wafer?

Isikebhe se-silicon carbide ceramic wafer siyisakhiwo esithwala i-wafer esishisa kakhulu esenziwe nge-ceramics esezingeni eliphezulu esekelwe kwi-silicon carbide. Inhloso yaso eyinhloko ukusekela nokuthutha ngokuphephile ama-wafer amaningi e-semiconductor ngezinhlelo zesithando esiqondile noma esivundlile ngesikhathi sokusebenza kokwelashwa kokushisa.

Isikebhe esivamile se-wafer siqukethe izikhala eziningi ze-wafer eziklanywe ngokunemba ezenzelwe ukugcina isikhala se-wafer esilawulwa kakhulu ngesikhathi sokucubungula. Kuye ngesicelo, isakhiwo singase sihlanganise nemishayo yokusekela, izingalo ze-cantilever, ama-geometri alungiselelwe ukuhamba komoya, kanye nezingxenye zokuqinisa ezilula ezenzelwe ukunciphisa isisindo sokushisa.

Ezinhlelweni zesithando se-semiconductor, izikebhe ze-wafer zisebenza kahle njengesixhumanisi phakathi kwama-wafer nendawo yokucubungula ukushisa. Njengoba ubukhulu bedivayisi buqhubeka nokuncipha bubheke kuma-node obuchwepheshe obuthuthukisiwe, ngisho nokukhubazeka okuncane ngaphakathi kwesakhiwo sokusekela i-wafer kungathinta ukuphindaphindwa kwenqubo kanye nokusebenza kwephutha.

Lesi ngesinye sezizathu ezenza abakhiqizi bezitofu ezithuthukisiwe basebenzise kakhulu izingxenye ze-silicon carbide ceramic ezihlanzekile kakhulu esikhundleni sezinhlelo ze-quartz ezihlanganisiwe zendabuko.

IndimasEzinhlelweni Zesithando Somlilo Sokusabalalisa Nokuxova

Ukusabalala kanye nokubola kusalokhu kuphakathi kwezinqubo eziyisisekelo zokushisa ekukhiqizweni kwe-semiconductor. Lezi zinqubo zisetshenziswa kabanzi ekusebenzeni kwe-dopant, ukukhula kwe-thermal oxide, ukufakelwa, ukusabalala kwe-drive-in, kanye nokwakheka kwe-dielectric.

Amazinga okushisa ajwayelekile okusebenza asukela cishe ku-900°C kuya ku-1200°C kuye ngokuthi inqubo iyasebenza yini kanye nezidingo zedivayisi. Kwezinye izinhlelo zokusebenza ze-semiconductor yamandla athuthukisiwe noma zedivayisi ye-SiC, imijikelezo yokushisa ingadlula ku-1300°C.

Ngaphansi kwalezi zimo, isikebhe se-wafer kumele silondoloze ukuzinza kobukhulu besikhathi sokushisa okude ngenkathi sinciphisa ukungcola futhi silondoloze izikhala ezifanayo ze-wafer.

Izikebhe ze-quartz zendabuko sezilokhu zisetshenziswa ezithandweni zokusabalalisa ngenxa yobumsulwa bazo obukhulu kanye nezindleko eziphansi. Kodwa-ke, izinto ze-quartz zibonisa ukuhanjiswa kokushisa okuphansi kakhulu — ngokuvamile cishe ku-1.4 W/m·K ekushiseni kwegumbi.

Uma kuqhathaniswa, i-silicon carbide ceramics ngokuvamile ibonisa amanani okushisa asukela cishe ku-120 ~ 200 W/m·K kuye ngebanga kanye nesakhiwo esincane.

Lo mehluko omkhulu uthuthukisa kakhulu ukufana kwezinga lokushisa kulo lonke umthwalo wesithando.

Ukushisa okuphezulu kwenza:

● Ukushisa okufana kakhulu kwe-wafer

● Ukwehla kwe-gradient yokushisa

● Ukuvumelana okuthuthukisiwe phakathi kwe-wafer ne-wafer

● Ukuqongelela kokucindezeleka okuphansi kokushisa

● Imiphumela encishisiwe yomphetho ngesikhathi sokushiswa noma ukusabalala

Ekukhiqizweni kwe-semiconductor okuthuthukisiwe, lapho amafasitela enqubo eqhubeka nokuncipha, lokhu kuthuthukiswa kuthinta ngqo ukufana kwefilimu kanye nokusebenza kahle kukagesi.

Izikebhe ze-SiC wafer nazo zinikeza ukuqina okuphezulu kakhulu kwemishini uma kuqhathaniswa nezakhiwo ze-quartz. Lokhu kuba kubaluleke kakhulu ezinhlelweni zesithando esiqondile ezicubungula amaqoqo amakhulu ama-wafer angu-300 mm, lapho ubude besikebhe kanye nomthwalo wemishini kungaba yinto ebalulekile.

Ukuguquguquka okuncishisiwe kusiza ukugcina isikhala esiqondile se-wafer kanye nokuziphatha okuzinzile kokugeleza kwegesi kulo lonke umjikelezo wokushisa.

Izakhiwo Ezibalulekile Zomzimba Zezikebhe Ze-Silicon Carbide Ceramic Wafer

Ukuthandwa okwandayo kwezikebhe ze-silicon carbide wafer kungenxa yenhlanganisela eyingqayizivele yezakhiwo zokushisa, zemishini, nezamakhemikhali ze-silicon carbide ceramics.

Izici Ezibalulekile Zomzimba

Lezi zakhiwo zivumela izakhiwo ze-silicon carbide ceramic ukuthi zilondoloze ukuzinza kobukhulu ngaphansi kokujikeleza kokushisa okude, kanti izingxenye ze-quartz zendabuko zingase ziqale ukuthamba noma ukuwohloka.

Ukuqina okuphezulu kwe-silicon carbide kunciphisa nokudlidliza kanye nokungazinzi komshini ngesikhathi sokulayisha nokuthulula ama-wafer esithandweni.

Izinhlobo Ezinkulu Zezinto Ezisetshenziswayo Zezikebhe Ze-Silicon Carbide Wafer

Izikebhe zesimanje ze-silicon carbide wafer zikhiqizwa kusetshenziswa ubuchwepheshe obuhlukahlukene bezinto zokwakha, ngasinye silungiselelwe izindawo ezithile zenqubo kanye nezidingo zokusebenzisa kahle izindleko.

I-silicon carbide (RSiC) ephinde yasetshenziswa isetshenziswa kabanzi ekusetshenzisweni kwesithando sokushisa okuphezulu ngenxa yobumsulwa bayo obuhle kakhulu kanye nokuqina kokushisa. Inqubo yokukhiqiza ye-RSiC ayidingi ukwengezwa kwezinsiza eziningi zokushisa, okusiza ukunciphisa ingozi yokungcola ezindaweni ze-semiconductor.

I-silicon carbide e-Reaction-sintered (RBSC noma i-RBSiC) inikeza amandla aphezulu okusebenza kanye nezindleko zokukhiqiza eziphansi. Kodwa-ke, i-silicon engenayo esele esakhiweni inganciphisa ukumelana kwayo nokugqwala kwezinye izindawo zenqubo yokugqwala.

Ngezinhlelo zokusebenza ze-semiconductor ezithuthukisiwe, izinhlelo ze-graphite ezimbozwe nge-CVD silicon carbide ziya ngokuya zivamile. Kulezi zakhiwo, i-substrate ye-graphite inikeza ukwesekwa okulula kwemishini, kuyilapho i-silicon carbide coating ye-high-purity chemical vapor deposition (CVD) yakha i-interface yenqubo.

Izembozo ze-CVD silicon carbide zinezinga eliphansi kakhulu lokukhiqizwa kwezinhlayiya kanye nobumsulwa obumangalisayo, okwenza zikhange kakhulu ekukhiqizweni kwe-logic ethuthukisiwe kanye ne-power semiconductor. Kodwa-ke, ubuqotho bezembozo kanye nama-coefficients angalingani okwanda kokushisa kumele kulawulwe ngokucophelela ukuvimbela ukuqhekeka noma ukuhlukaniswa ngesikhathi sokujikeleza kokushisa okuphindaphindiwe.

Izinselele Ezivamile Zenqubo

Naphezu kwezinzuzo zokusebenza kwezikebhe ze-silicon carbide ceramic wafer, zisabhekene nezinselele eziningi zobunjiniyela ezindaweni zokukhiqiza ze-semiconductor zangempela.

Ukungcola kwezinhlayiya kusalokhu kungenye yezinkinga ezibaluleke kakhulu. Njengoba ubukhulu bedivayisi buncipha, ukulahlekelwa kwesivuno okubangelwa yizinhlayiya kuba kubi kakhulu. Ngisho nemfucumfucu encane kakhulu ebangelwa ukuqhekeka okuncane, ukususwa kwengubo, noma ukuwohloka kwendawo kungabangela ukukhubazeka okubulalayo kuma-wafer athuthukile.

Ukuqhekeka kokucindezeleka kokushisa kungenye inselele yesikhathi eside. Nakuba i-silicon carbide inokuqina okuhle kokushisa, isalokhu iyinto yobumba ebuthakathaka kakhulu. Ukushisa okusheshayo noma ukungalingani kwezinga lokushisa endaweni kungaholela ekuqhekekeni emakhoneni esakhiwo, emiseleni ye-wafer, noma ezimpambanweni zemisebe.

Ukujikeleza kokushisa kwesikhathi eside kungaholela ekuguqukeni kancane kancane noma ekuqhekekeni, ikakhulukazi ezikebheni ezinkulu ze-wafer ezisetshenziswa ezinhlelweni zesithando esiqondile. Ngisho nezinguquko ezincane zejometri zingashintsha isikhala se-wafer kanye nokufana kokugeleza kwegesi, ngaleyo ndlela kuthinte ukulawulwa kobukhulu be-oxide kanye nokuvumelana kokusatshalaliswa kwe-dopant.

Ukwehlukaniswa kwe-CVD coating kungenye inkinga ebalulekile yokuthembeka ezinhlelweni ze-SiC ezimboziwe. Ngenxa yokuthi i-graphite substrate kanye ne-SiC coating zibonisa izindlela ezahlukene zokunwetshwa kokushisa, ukujikeleza okuphindaphindiwe kokushisa okuphezulu ekugcineni kuholela ekuqongeleleni kokucindezeleka endaweni ehlanganisiwe.

Isiphetho

Ezinhlelweni ze-semiconductor diffusion kanye ne-oxidation furnace, izikebhe ze-silicon carbide ceramic wafer zidlala indima ebalulekile ekugcineni ukuzinza kokushisa, ukulawula ukungcola, kanye nokuqinisekisa ukufana kwenqubo ngaphansi kwezimo zokusebenza ezinzima kakhulu. Ukuqhuba kwazo ukushisa okuphezulu, ukuqina okuhle kakhulu kwemishini, ukumelana nokushisa okuphezulu, kanye nokuqina kwamakhemikhali kuzenza zibe yinto ebaluleke kakhulu ekukhiqizweni kwe-semiconductor okuthuthukisiwe.

Njengoba ubuchwepheshe bezinqubo ze-semiconductor buqhubeka nokukhula, buba nzima ngokwengeziwe, futhi izidingo zokulawula amaphutha zikhula ngamandla, ukubaluleka kwezinhlelo zokuthwala i-wafer ze-ceramic ezithuthukisiwe kuzoqhubeka nokukhula. Ezindaweni zanamuhla, izinselele eziningi ezihlobene nokulawula izinhlayiya, ukufana kokushisa, kanye nokuthembeka kungalandelwa ekugcineni ekusebenzisaneni phakathi kokuziphatha kokujikeleza kokushisa, ukuzinza kwezinto, kanye nokwakhiwa kohlelo lokuthwala i-wafer.

Ngenxa yalokho, izikebhe ze-silicon carbide ceramic wafer zishintsha ngokushesha kusuka ku-hardware ye-assistant furnace zibe yizingxenye ezibalulekile zokukhiqiza i-semiconductor yesizukulwane esilandelayo.