ʻO ka mea Silicon carbide a me kona mau hiʻohiʻona

ʻO ka hāmeʻa semiconductor ke kumu o nā lako mīkini ʻoihana hou, i hoʻohana nui ʻia i nā kamepiula, nā mea uila mea kūʻai aku, nā kamaʻilio pūnaewele, nā mea uila kaʻa, a me nā wahi ʻē aʻe o ke kumu, ʻo ka ʻoihana semiconductor ka mea nui o nā ʻāpana kumu ʻehā: nā kaapuni hoʻohui, nā mea optoelectronic, nā mea discrete, a me nā sensor, ʻoi aku ma mua o 80% o nā kaapuni hoʻohui, a pinepine ka semiconductor a me ka kaapuni hoʻohui like.

E like me ke ʻano huahana, ua māhele nui ʻia ke kaapuni hoʻohui i ʻehā mau ʻāpana: microprocessor, hoʻomanaʻo, nā mea hana logic, nā ʻāpana simulator. Eia nō naʻe, me ka hoʻonui mau ʻana o ke kahua noi o nā mea semiconductor, he nui nā manawa kūikawā e pono ai nā semiconductors e pili i ka hoʻohana ʻana i ka mahana kiʻekiʻe, ka radiation ikaika, ka mana kiʻekiʻe a me nā wahi ʻē aʻe, mai hōʻino, ʻaʻohe mana o ka hanauna mua a me ka lua o nā mea semiconductor, no laila ua puka mai ka hanauna ʻekolu o nā mea semiconductor.

kiʻi1

I kēia manawa, ʻo nā mea semiconductor band gap ākea i hōʻike ʻia ekalaka silicon(SiC), gallium nitride (GaN), zinc oxide (ZnO), daimana, alumini nitride (AlN) e noho ana i ka mākeke nui me nā pono nui aʻe, i kapa ʻia ʻo nā mea semiconductor hanauna ʻekolu. ʻO ke kolu o ka hanauna o nā mea semiconductor me ka laulā ākea o ka band gap, ʻoi aku ke kiʻekiʻe o ke kahua uila breakdown, thermal conductivity, electronic saturated rate a me ke kiʻekiʻe o ka hiki ke kūʻē i ka radiation, ʻoi aku ka kūpono no ka hana ʻana i nā mea wela kiʻekiʻe, alapine kiʻekiʻe, kūʻē i ka radiation a me nā mea mana kiʻekiʻe, i ʻike pinepine ʻia he mau mea semiconductor bandgap ākea (ʻoi aku ka laulā o ka band i pāpā ʻia ma mua o 2.2 eV), i kapa ʻia hoʻi he mahana kiʻekiʻe nā mea semiconductor. Mai ka noiʻi o kēia manawa ma nā mea semiconductor hanauna ʻekolu a me nā mea hana, ʻoi aku ka oʻo o nā mea silicon carbide a me gallium nitride semiconductor, aʻenehana silicon carbideʻo ia ka mea i oʻo loa, ʻoiai ke noiʻi ʻana ma ka zinc oxide, daimana, alumini nitride a me nā mea ʻē aʻe aia nō i ke kahua mua.

Nā Mea Hana a me ko lākou mau Waiwai:

Karbida silikaHoʻohana nui ʻia ka mea i nā bearings ball ceramic, valves, semiconductor materials, gyros, mea ana, aerospace a me nā mahina ʻē aʻe, ua lilo i mea hiki ʻole ke hoʻololi ʻia ma nā kahua ʻoihana he nui.

kiʻi2

He ʻano superlattice kūlohelohe ʻo SiC a he polytype homogeneous maʻamau. Aia ma mua o 200 (i ʻike ʻia i kēia manawa) nā ʻohana polytypic homotypic ma muli o ka ʻokoʻa o ke kaʻina hoʻopili ma waena o nā papa diatomic Si a me C, kahi e alakaʻi ai i nā ʻano kristal like ʻole. No laila, kūpono loa ʻo SiC no ka hanauna hou o ka mea substrate diode emitting light (LED), nā mea uila mana kiʻekiʻe.

ʻano

waiwai kino

Paʻakikī kiʻekiʻe (3000kg/mm), hiki ke ʻoki i ka ruby
Ke kūpaʻa kiʻekiʻe o ka ʻaʻahu, ʻo ka lua wale nō i ka daimana
ʻO 3 manawa ke kiʻekiʻe o ka conductivity thermal ma mua o Si a me 8 ~ 10 manawa ke kiʻekiʻe ma mua o GaAs.
Kiʻekiʻe ke kūpaʻa wela o SiC a hiki ʻole ke hoʻoheheʻe ʻia ma ke kaomi lewa
He mea nui loa ka hana hoʻopuehu wela maikaʻi no nā mea hana mana kiʻekiʻe
 

 

waiwai kemika

Ke kūpaʻa ikaika loa i ka palaho, kūpaʻa i ka aneane o nā mea ʻāpala i ʻike ʻia ma ka mahana o ka lumi
Hoʻomake maʻalahi ka ʻili SiC e hana i ka SiO, papa lahilahi, hiki ke pale i kona hoʻokeʻokeʻo hou ʻana, i loko Ma luna o 1700 ℃, heheʻe ka ʻili oxide a hoʻomake koke
ʻO ka bandgap o 4H-SIC a me 6H-SIC ma kahi o 3 manawa o Si a me 2 manawa o GaAs: ʻOi aku ka nui o ke kahua uila haki ma mua o Si, a ua piha ka wikiwiki o ka electron drift ʻElua a me ka hapa manawa o ka Si. ʻOi aku ka laulā o ka bandgap o 4H-SIC ma mua o 6H-SIC

Ka manawa hoʻouna: ʻAukake-01-2022
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