Kayan silicon carbide da siffofinsa

Na'urar Semiconductor ita ce ginshiƙin kayan aikin injinan masana'antu na zamani, waɗanda ake amfani da su sosai a kwamfutoci, na'urorin lantarki na masu amfani, sadarwa ta hanyar sadarwa, na'urorin lantarki na mota, da sauran sassan tsakiya. Masana'antar semiconductor galibi ta ƙunshi sassa huɗu na asali: da'irori masu haɗawa, na'urorin optoelectronic, na'urar da ba ta da bambanci, firikwensin, wanda ke da alhakin fiye da kashi 80% na da'irori masu haɗawa, sau da yawa kuma daidai da semiconductor da da'irar da aka haɗa.

Da'irar da aka haɗa, bisa ga nau'in samfurin, galibi an raba ta zuwa rukuni huɗu: microprocessor, ƙwaƙwalwa, na'urorin dabaru, sassan na'urar kwaikwayo. Duk da haka, tare da ci gaba da faɗaɗa filin aikace-aikacen na'urorin semiconductor, lokatai na musamman da yawa suna buƙatar semiconductors su iya bin amfani da yanayin zafi mai yawa, radiation mai ƙarfi, babban iko da sauran muhalli, ba sa lalacewa, ƙarni na farko da na biyu na kayan semiconductor ba su da ƙarfi, don haka ƙarni na uku na kayan semiconductor sun fara wanzuwa.

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A halin yanzu, kayan semiconductor gap mai faɗi da aka wakilta ta hanyarsilicon carbide(SiC), gallium nitride (GaN), zinc oxide (ZnO), lu'u-lu'u, aluminum nitride (AlN) sun mamaye kasuwa mafi girma tare da fa'idodi mafi girma, waɗanda aka haɗa su da kayan semiconductor na ƙarni na uku. Tsarin ƙarni na uku na kayan semiconductor tare da faɗin tazara mai faɗi, mafi girman filin lantarki mai lalacewa, watsawar zafi, ƙimar cikakken lantarki da kuma babban ikon tsayayya da radiation, mafi dacewa don yin babban zafin jiki, mita mai yawa, juriya ga radiation da na'urori masu ƙarfi, waɗanda aka fi sani da kayan semiconductor mai faɗi (faɗin band da aka haramta ya fi 2.2 eV), wanda kuma ake kira babban zafin jiki kayan semiconductor. Daga binciken da ake yi a yanzu kan kayan semiconductor na ƙarni na uku da na'urori, kayan semiconductor na silicon carbide da gallium nitride sun fi girma, kumafasahar silicon carbideshine mafi girma, yayin da binciken da aka yi kan zinc oxide, lu'u-lu'u, aluminum nitride da sauran kayayyaki har yanzu yana matakin farko.

Kayan Aiki da Kadarorinsu:

Silicon carbideAna amfani da kayan sosai a cikin bearings na ƙwallon yumbu, bawuloli, kayan semiconductor, gyros, kayan aunawa, sararin samaniya da sauran fannoni, ya zama kayan da ba za a iya maye gurbinsu ba a fannoni da yawa na masana'antu.

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SiC wani nau'in superlattice ne na halitta kuma nau'in polytype iri ɗaya ne. Akwai iyalai sama da 200 (wanda aka sani a yanzu) na homonypic polytypic saboda bambancin jerin marufi tsakanin layukan Si da C diatomic, wanda ke haifar da tsarin lu'ulu'u daban-daban. Saboda haka, SiC ya dace sosai da sabon ƙarni na kayan abu mai haske mai fitar da haske (LED), kayan lantarki masu ƙarfi.

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kadarorin zahiri

Babban tauri (3000kg/mm), ana iya yanke ruby
Juriyar lalacewa mai yawa, ta biyu kawai da lu'u-lu'u
Lantarkin zafin jiki ya fi na Si sau 3 kuma ya fi na GaA sau 8 ~ 10.
Kwanciyar yanayin zafi na SiC yana da girma kuma ba zai yiwu a narke a matsin lamba na yanayi ba
Kyakkyawan aikin watsa zafi yana da matuƙar muhimmanci ga na'urori masu ƙarfi
 

 

kadarorin sinadarai

Ƙarfin juriyar tsatsa, mai juriya ga kusan duk wani abu da aka sani na tsatsa a zafin ɗaki
Sufurin SiC yana da sauƙin oxidize don samar da SiO2, siririn Layer, yana iya hana ƙarin oxidation, a cikin Sama da digiri 1700, fim ɗin oxide yana narkewa kuma yana yin oxidizes da sauri
Ramin ramin 4H-SIC da 6H-SIC ya ninka na Si sau 3 sau kuma na GaA sau 2 sau: Ƙarfin filin lantarki na rushewa tsari ne na girma fiye da Si, kuma saurin juyawar electron yana cike da cikakken iko. Sau biyu da rabi a Si. Bandgap na 4H-SIC ya fi na 6H-SIC faɗi.

Lokacin Saƙo: Agusta-01-2022
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