Izinto ze-silicon carbide kunye neempawu zayo

Isixhobo se-semiconductor sisisiseko sezixhobo zoomatshini zoshishino zanamhlanje, ezisetyenziswa kakhulu kwiikhompyutha, kwii-elektroniki zabathengi, kunxibelelwano lwenethiwekhi, kwii-elektroniki zeemoto, nakwezinye iindawo zesiseko, ishishini le-semiconductor lenziwe ikakhulu zizinto ezine ezisisiseko: iisekethe ezidibeneyo, izixhobo ze-optoelectronic, isixhobo esizimeleyo, i-sensor, ebangela ngaphezulu kwe-80% yeesekethe ezidibeneyo, ngoko ke rhoqo kunye nesekethe edibeneyo ye-semiconductor kunye ne-equivalent circuit.

Isekethe edibeneyo, ngokwecandelo lemveliso yahlulwe kakhulu kwiindidi ezine: i-microprocessor, imemori, izixhobo ze-logic, iindawo ze-simulator. Nangona kunjalo, ngokwandiswa okuqhubekayo kwendawo yokusetyenziswa kwezixhobo ze-semiconductor, amaxesha amaninzi akhethekileyo afuna ii-semiconductors ukuba zikwazi ukunamathela ekusebenziseni ubushushu obuphezulu, imitha enamandla, amandla aphezulu kunye nezinye iindawo, zingonakalisi, isizukulwana sokuqala nesesibini sezixhobo ze-semiconductor azinamandla, ngoko ke isizukulwana sesithathu sezixhobo ze-semiconductor savela.

Okwangoku, izixhobo ze-semiconductor ze-wide band gap ezimelwe yii-silicon carbide(SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimani, i-aluminium nitride (AlN) zithatha indawo kwimarike ebalaseleyo ngeenzuzo ezinkulu, ezibizwa ngokuba zizixhobo ze-semiconductor zesizukulwana sesithathu. Isizukulwana sesithathu sezixhobo ze-semiconductor ezinobubanzi be-band gap ebanzi, kokukhona intsimi yombane eqhekekayo iphezulu, ukuhanjiswa kobushushu, izinga eligcweleyo le-elektroniki kunye nokukwazi okuphezulu ukumelana nemitha, zifanelekile ngakumbi ukwenza ubushushu obuphezulu, i-frequency ephezulu, ukumelana nemitha kunye nezixhobo zamandla aphezulu, ezihlala zibizwa ngokuba zizixhobo ze-semiconductor ze-wide bandgap (ububanzi be-band obungavumelekanga bukhulu kune-2.2 eV), ezikwabizwa ngokuba zizixhobo ze-semiconductor ezishushu kakhulu. Ukusuka kuphando lwangoku kwizixhobo ze-semiconductor zesizukulwana sesithathu kunye nezixhobo, izixhobo ze-silicon carbide kunye ne-gallium nitride semiconductor zivuthiwe ngakumbi, kwayeitekhnoloji ye-silicon carbideyeyona ivuthiweyo, ngelixa uphando malunga ne-zinc oxide, idayimani, i-aluminium nitride kunye nezinye izinto lusekwinqanaba lokuqala.

Izixhobo kunye neempawu zazo:

I-silicon carbideEzi zinto zisetyenziswa kakhulu kwiibheringi zebhola zeseramikhi, iivalvu, izixhobo ze-semiconductor, ii-gyros, izixhobo zokulinganisa, i-aerospace kunye nezinye iindawo, ziye zaba zizinto ezingenakutshintshwa kwiindawo ezininzi zoshishino.

I-SiC luhlobo lwe-superlattice yendalo kunye ne-polytype eqhelekileyo eyomeleleyo. Kukho iintsapho ezingaphezu kwama-200 (ezaziwa ngoku) ze-homotypic polytypic ngenxa yomahluko kulandelelwano lokupakisha phakathi kwe-Si kunye ne-C diatomic layers, nto leyo ekhokelela kwizakhiwo ezahlukeneyo zekristale. Ke ngoko, i-SiC ifanelekile kakhulu kwisizukulwana esitsha sezinto ze-substrate ezikhupha ukukhanya (i-LED), izixhobo ze-elektroniki ezinamandla aphezulu.