Izinto ze-silicon carbide kanye nezici zayo

Idivayisi ye-semiconductor iyisisekelo semishini yesimanje yemishini yezimboni, esetshenziswa kabanzi kumakhompyutha, kuma-electronics abathengi, ezokuxhumana kwenethiwekhi, kuma-electronics ezimoto, nakwezinye izindawo zomgogodla, imboni ye-semiconductor yakhiwe kakhulu yizingxenye ezine eziyisisekelo: amasekethe ahlanganisiwe, amadivayisi e-optoelectronic, idivayisi ehlukile, inzwa, equkethe ngaphezu kwama-80% amasekethe ahlanganisiwe, ngakho-ke ngokuvamile kanye ne-semiconductor kanye nesekethe ehlanganisiwe elingana.

Isekethe ehlanganisiwe, ngokwesigaba somkhiqizo ihlukaniswe kakhulu ngezigaba ezine: i-microprocessor, inkumbulo, amadivayisi okucabanga, izingxenye ze-simulator. Kodwa-ke, ngokukhula okuqhubekayo kwensimu yokusetshenziswa kwamadivayisi e-semiconductor, izikhathi eziningi ezikhethekile zidinga ama-semiconductor ukuthi akwazi ukunamathela ekusetshenzisweni kwezinga lokushisa eliphezulu, imisebe enamandla, amandla aphezulu kanye nezinye izindawo, angalimazi, isizukulwane sokuqala nesesibili sezinto ze-semiconductor azinamandla, ngakho-ke isizukulwane sesithathu sezinto ze-semiconductor saqala ukuba khona.

Njengamanje, izinto ze-semiconductor ze-wide band gap ezimelelwa yii-silicon carbide(SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimane, i-aluminium nitride (AlN) zithatha imakethe evelele ngezinzuzo ezinkulu, ezibizwa ngokuthi izinto ze-semiconductor zesizukulwane sesithathu. Isizukulwane sesithathu sezinto ze-semiconductor ezinobubanzi begebe lebhendi ebanzi, kulapho insimu kagesi eqhekeka khona iphakama khona, ukuhanjiswa kokushisa, izinga eligcwele likagesi kanye nekhono eliphakeme lokumelana nemisebe, kufaneleka kakhulu ekwenzeni izinga lokushisa eliphezulu, imvamisa ephezulu, ukumelana nemisebe kanye namadivayisi wamandla aphezulu, ngokuvamile okwaziwa ngokuthi izinto ze-semiconductor ze-wide bandgap (ububanzi bebhendi obungavunyelwe bukhulu kune-2.2 eV), okubizwa nangokuthi izinga lokushisa eliphezulu izinto ze-semiconductor. Kusukela ocwaningweni lwamanje ngezinto namadivayisi e-semiconductor yesizukulwane sesithathu, izinto ze-silicon carbide kanye ne-gallium nitride semiconductor zivuthiwe kakhulu, futhiubuchwepheshe be-silicon carbideiyona evuthiwe kakhulu, kanti ucwaningo nge-zinc oxide, idayimane, i-aluminium nitride nezinye izinto lusesesigabeni sokuqala.

Izinto zokwakha kanye nezakhiwo zazo:

I-silicon carbideIzinto ezisetshenziswa kabanzi kuma-ceramic ball bearings, ama-valve, izinto ze-semiconductor, ama-gyros, izinsimbi zokulinganisa, izindiza kanye neminye imikhakha, seziyinto engenakuphikwa emikhakheni eminingi yezimboni.

I-SiC uhlobo lwe-superlattice yemvelo kanye ne-polytype ejwayelekile ehambisanayo. Kunemindeni engaphezu kuka-200 (eyaziwa njengamanje) ye-homotypic polytypic ngenxa yomehluko wokulandelana kokupakisha phakathi kwezingqimba ze-diatomic ze-Si ne-C, okuholela ezinhlakeni ezahlukene zekristalu. Ngakho-ke, i-SiC ifaneleka kakhulu esizukulwaneni esisha sezinto ezikhipha ukukhanya kwe-diode (LED) substrate, izinto ze-elekthronikhi ezinamandla aphezulu.