No ke aha he mea koʻikoʻi ka uhi ʻana o TaC no ka hana ʻana o nā hāmeʻa GaN a me SiC?

He mea koʻikoʻi ka uhi ʻana o TaC no ka hana ʻana o nā mea hana GaN a me SiC. Hāʻawi ia i ka palekana maikaʻi loa e kūʻē i nā kaiapuni hana ʻino, hoʻonui i ke kūpaʻa wela, a pale i ka haumia. He mea nui kēia mau mea no ka hoʻokō ʻana i ka hana kiʻekiʻe a me ka loaʻa ʻana o ka huahana. Ua wānana ka mākeke mana GaN o Asia-Pacific i kahi 19.33% Compound Annual Growth Rate ma waena o 2025 a me 2032. ʻO ka mākeke holoʻokoʻa no kēia mau mea hana, i waiwai ʻia ma USD 2.24 biliona i ka makahiki 2023, ke manaʻo nei e hiki i ka USD 18 biliona ma ka makahiki 2032, e ulu ana ma kahi CAGR 25%. Hōʻike kēia hoʻonui mākeke koʻikoʻi i ka pono no nā hoʻonā hana ikaika.

Nā Manaʻo Koʻikoʻi

• Mālama ka uhi ʻana o TaC i nā lako i hoʻohana ʻia e hana i nā mea hana GaN a me SiC. Hoʻōki ia i ka hōʻino ʻia mai nā kemika ʻino a me ka wela kiʻekiʻe.
• ʻOi aku ka maikaʻi o nā hāmeʻa GaN a me SiC ma mua o nā hāmeʻa silicon kahiko. Hana wikiwiki lākou a hoʻohana i ka mana liʻiliʻi, akā paʻakikī ke hana.
• Kōkua ka uhi ʻana o TaC i ka hoʻomaʻemaʻe ʻana i nā hāmeʻa GaN a me SiC. Hoʻōki ia i nā ʻāpana lepo liʻiliʻi mai ke komo ʻana i loko o nā hāmeʻa.
• Hoʻomaopopo ka uhi ʻana o TaC i ka hana ʻia ʻana o nā hāmeʻa i ke ʻano like i nā manawa a pau. ʻO ke ʻano kēia, ʻoi aku ka nui o nā hāmeʻa maikaʻi i hana ʻia a emi iho ka pohō ʻia.
• He mea nui loa ka uhi ʻana o TaC no ka hana ʻana i nā mea uila mana hou. Kōkua ia i kēia mau mea hana holomua e hana maikaʻi a lōʻihi ka lōʻihi.

Nā Hāmeʻa GaN a me SiC: ʻO ka Hanauna Hou o nā Uila Mana

ʻIkepili o nā Pōmaikaʻi o nā Hāmeʻa GaN a me SiC

ʻO nā mea hana Gallium Nitride (GaN) a me Silicon Carbide (SiC) e hōʻike ana i kahi lele nui i mua i nā mea uila mana. Hāʻawi lākou i nā hoʻomaikaʻi nui ma mua o nā ʻāpana silicon kuʻuna. ʻO nā mea hana SiC, no ka laʻana, hōʻike i nā ʻano maikaʻi loa ma waena o kekahi mau palena koʻikoʻi:

Loaʻa i nā mea hana SiC ka pono kiʻekiʻe a me nā pohō mana haʻahaʻa. Hoʻemi lākou i nā pohō conduction a me ke kuapo ʻana. ʻEkolu manawa ʻoi aku ka kiʻekiʻe o ka bandgap o SiC ma mua o ka silicon, e ʻae ana i nā papa drift lahilahi. Hoʻemi kēia i ke kū'ē ʻana a hiki i ka ʻumi manawa no ka helu voltage like. ʻElima manawa ka haʻahaʻa o ka pohō conduction o ka 1200V SiC MOSFET ma mua o ka silicon IGBT. Hoʻololi pū nā mea hana SiC i 10 a 100 mau manawa wikiwiki ma mua o ka silicon, e hoʻemi ana i nā pohō transient. Hoʻopau nā diode SiC Schottky i ka hoʻihoʻi hope ʻana, e wehe ana i kahi kumu nui o ka pohō. Hana kēia mau mea hana i nā mahana kiʻekiʻe, me ka mahana junction kiʻekiʻe loa o 200-250°C, ʻelua manawa o ka silicon. Loaʻa iā lākou he 2.5 mau manawa ʻoi aku ka maikaʻi o ka conductivity thermal, e hoʻonui ana i ka hoʻolaha wela. Kūʻē nā pilina atomika ikaika o SiC i ka electromigration a me ka haki ʻana o ka gate oxide, e hāʻawi ana i kahi ola lōʻihi.

Nā pilikia hana no nā polokalamu GaN a me SiC

ʻO ka hana ʻana i nā mea hana GaN a me SiC he mau pilikia hana kūikawā. Loaʻa kēia mau pilikia mai nā waiwai kūlohelohe o nā mea a me nā kaʻina hana paʻakikī.

No nā polokalamu GaN, kū nā mea hana i kekahi mau pilikia:

• ʻO ke ʻano o ka kristal a me ka nui o ke kīnāHe mea paʻakikī ka hoʻokō ʻana i ke ʻano kristal kiʻekiʻe me ka haʻahaʻa o ka hemahema. Ulu pinepine ʻo GaN ma nā substrates e like me ka sapphire a i ʻole silicon, nona nā ʻano lattice like ʻole. Hoʻokumu kēia mismatch i nā hemahema i ka wā o ka ulu ʻana o ka epitaxial, e hoʻopilikia ana i ka hana o ka hāmeʻa.
• Nā Kaʻina Hana Ulu EpitaxialʻO nā ʻano hana e like me ka Metal-Organic Chemical Vapor Deposition (MOCVD) he pipiʻi a koi aku i ka kaohi pololei. Hāʻawi ʻo Hydride Vapor Phase Epitaxy (HVPE) i ka ulu wikiwiki akā hoʻopilikia i nā hopena kinoea a me ka maikaʻi o ka ʻili.
• Doping a me ke ʻano likeHe mea paʻakikī ka hoʻokō ʻana i nā pae doping like, ʻoi aku hoʻi no ka GaN ʻano-p. Ma muli kēia o nā waiwai o ka mea a me nā kaʻina hana kemika paʻakikī.
• Loaʻa a me ke kumukūʻai o ka substrateʻOi aku ka maʻalahi o nā substrates Silicon akā hoʻolauna i nā mismatches lattice nui aʻe.

Ua pilikia nui ka hana ʻana o nā hāmeʻa SiC:

• Paʻakikī loa a me ka palupaluʻO ka paʻakikī o SiC (Mohs 9) a me ka brittleness e paʻakikī ai ka hana ʻana. He lohi a he pono ʻole ka hoʻopili ʻana o ka wafer, e koi ana i nā slurries kūikawā.
• Ka lawelawe ʻana i ka waferHe paʻakikī ka lawelawe ʻana i nā wafers SiC ma muli o ko lākou palupalu. ʻO kēia ke alakaʻi ʻana i ka chipping, ka nahā, a me ka haumia o nā ʻāpana.
• Nā Koina EpitaxyʻO ka Epitaxy no SiC e pono ai nā mahana kiʻekiʻe ma mua o ka silicon. Hoʻopōkole kēia i ke ola o nā ʻāpana keʻena a hoʻonui i nā kumukūʻai mālama.
• Hoʻokomo ʻana o ka IonʻO ke kau ʻana o ka alumini no nā helehelena doping ʻano-p nā pilikia paʻa kumu ion. ʻAʻole maʻalahi ka hoʻolaha ʻana o nā Dopants a hiki ke hana i nā lua. Hiki i nā mahana annealing kiʻekiʻe (1800°C) ke hoʻoheheʻe i ka ʻili.

ʻO ka pilikia koʻikoʻi: ka hōʻino ʻana o nā mea a me ka haumia i ka hana ʻana

Ka palaho a me ka ʻino ʻana o nā lako hana ma nā wahi ʻino

Ke kū nei nā lako hana semiconductor i ka hōʻino nui ʻana a me ka ʻaʻahu ʻana i nā mea. ʻO nā wahi ʻino, me ka ʻike ʻana i nā kemika corrosive a me nā kaʻina hana abrasive, ke kumu o kēia mau pilikia. ʻO kēia ke alakaʻi ʻana i ka emi ʻana o ke ola o nā lako a me ka hoʻopilikia ʻana i ka pono hana. ʻO nā mea hana eli a me ka waiho ʻana, ʻoi aku ka paʻa, i nā kūlana koʻikoʻi. Loaʻa iā lākou ka plasma, nā mahana kiʻekiʻe, a me nā kemika reactive. Hoʻopilikia kēia mau mea i ka erosion a me ka hoʻouka kemika. Hāʻawi pū kēlā mau kūlana i ka hāʻule ʻana o nā lako ma ka hōʻino ʻana i nā mea a me ka hōʻemi ʻana i ka hana o nā mea hana.

Hoʻomaka pinepine kahi "ʻano hana hāʻule i hoʻopili ʻia me ka palaho." Hoʻonāwaliwali ka pāpaho palaho i ka ikaika o ka hoʻopaʻa ʻana o ka palena palaoa. ʻAe kēia nāwaliwali i nā māwae luhi i hoʻoulu ʻia e ka friction e pālahalaha koke. Hoʻolaha kēia mau māwae ma nā wahi hōʻuluʻulu pae i hoʻonui ʻia i ka tin. He mea paʻakikī kēia ʻano hōʻino hui e kāohi me nā ʻenehana uhi ʻili kuʻuna, ʻoi aku hoʻi i nā wahi palaho-friction koʻikoʻi.

Ka hopena o ka haumia ma ka hana o nā hāmeʻa GaN a me SiC

Hoʻopilikia nui ka haumia i ka hana a me ka hua o nā mea hana GaN a me SiC. Hiki i nā mea haumia liʻiliʻi ke hana i nā hemahema, e alakaʻi ana i ka hana hewa ʻana o ka mea hana a i ʻole ka emi ʻana o ka pono. No nā mea hana GaN, hoʻopilikia pinepine nā mea haumia kikoʻī:

• Nā pahele uila hohonu (E2 a me E4)Hoʻonui ʻia kēia mau pahele ma hope o ka hoʻomālamalama ʻana o ka proton a me ka electron. Hoʻokumu lākou i nā hanana puka a me ka drain-lag, e kōkua ana i ka hiolo ʻana o ke au a me ka hōʻino ʻana i nā AlGaN/GaN HEMT.
• Nā neʻe ʻana o ka ʻiliHoʻolaha nā dislocations wili open-core i ka liki ʻana o ka puka ma AlGaN/GaN HEMTs. Hoʻopilikia nā dislocations i hoʻonani ʻia e Indium (In) i nā InAlN/GaN HEMTs. Hoʻopili pū lākou i nā pahele electron hohonu, ka pahele ʻana, ka liki ʻana o ke au ma lalo o ka paepae, a me ka hoʻohaʻahaʻa holoʻokoʻa.
• Nā hakahaka Gallium i hoʻopili ʻia me Silicon (Si) a i ʻole Oxygen (O)Hana kēia mau paʻakikī ma ke ʻano he mau pahele lua nui ma n-GaN a me n-AlGaN.
• Kalapona (C)Hana pū ke kalapona ma ke ʻano he pahele lua nui ma n-GaN a me n-AlGaN.
• HydrogenʻO kēia haumia hope, he mea maʻamau i nā mea i ulu ʻia me ka MOCVD a me NH3-waiwai MBE, hoʻohuli i nā hoʻololi voltage paepae a me ka hoʻohaʻahaʻa transconductance ma lalo o ka irradiation proton.
• Nā mea ʻae hohonuʻO ka hoʻolauna ʻana o nā mea hoʻokipa hohonu i loko o ka papa pale e wehewehe ana i nā loli i ka volta paepae a me ka neʻe ʻana o ke kahawai i nā transistors AlGaN/GaN.
• Nā pahele hohonu i loko o ka papa buffer GaNHiki i kēia mau pahele ke alakaʻi i nā hopena like me nā mea hoʻokipa hohonu. Hāʻawi lākou i ka hoʻopau hapa ʻana o 2DEG a me ka hoʻopuehu ʻana o nā electron 2DEG.

Pehea e hoʻoponopono ai ʻo TaC Coating i nā pilikia hana koʻikoʻi

ʻO ka Inertness Kemika Kūikawā o ka Uhi ʻana o TaC

Hāʻawi ka uhi ʻana o TaC i ka inertness kemika kūikawā. ʻO kēia waiwai ka mea e waiwai nui ai i ka hana semiconductor. Kūʻē maikaʻi ia i ka erosion mai nā kinoea corrosive e like me chlorides a me fluorides. Mālama ka uhi i ka reactivity haʻahaʻa i nā wahi wela kiʻekiʻe. Pale kēia i nā hopena kemika makemake ʻole ʻia me nā kinoea reactive. He mea koʻikoʻi kēia ʻano no ka hōʻoia ʻana i ka maʻemaʻe o ke kaʻina hana a me ka waiho ʻana o nā mea kiʻekiʻe. He pōmaikaʻi nui ia i nā noi e pili ana i nā Silicon Carbide Wafer Boats a me nā ʻāpana koʻikoʻi ʻē aʻe.

"Ke hoʻohālikelike ʻia me ka uhi SiC, ʻoi aku ka kiʻekiʻe o ka inertness kemika a me ke kūpaʻa ʻana o TaC i ka corrosion."

Kūʻē nā uhi TaC i ka ammonia wela. Kūʻē pū lākou i nā mahu hydrogen, nā mahu silicon, a me nā metala i hoʻoheheʻe ʻia. Hāʻawi kēia mau uhi i ka pale ʻana iā H2, NH3, SiH4, a me Si i nā wahi kemika ʻino.

Ke kūpaʻa wela kiʻekiʻe a me ka paʻakikī mīkini o ka uhi ʻana o TaC

He mea koʻikoʻi ke kūpaʻa wela kiʻekiʻe a me ka paʻakikī mechanical no nā ʻāpana i ka hana ʻana o GaN a me SiC. Hōʻike ka graphite i uhi ʻia e TaC i ke kūpaʻa ʻoi aku ka maikaʻi o ka palaho kemika i hoʻohālikelike ʻia me ka graphite ʻōlohelohe a i ʻole ka graphite i uhi ʻia e SiC. Noho paʻa ia i nā mahana kiʻekiʻe, a hiki i ka 2600°C. ʻAʻole ia e pane me nā mea metala he nui. ʻO kēia ka mea e makemake nui ʻia ai no ka ulu ʻana o ka semiconductor single crystal o ke kolu o ka hanauna a me ke kālai ʻana o ka wafer. He mea pono loa ia no nā lako MOCVD i ka ulu ʻana o ka GaN a i ʻole AlN single crystal a me nā lako PVT i ka ulu ʻana o ka SiC single crystal. Hoʻonui nui kēia i ka maikaʻi o ke kristal.

Hiki ke hoʻohana paʻa ʻia nā uhi Tantalum Carbide (TaC) i nā mahana kiʻekiʻe a hiki i 2600°C. ʻAʻole lākou e pane me nā mea hao he nui. Manaʻo ʻia kēia uhi he kūpono no ka ulu ʻana o ka semiconductor single crystal hanauna ʻekolu a me ke kālai wafer. ʻOi aku ka maikaʻi, pono ia i ka ulu ʻana o nā lako MOCVD o nā kristal hoʻokahi GaN a i ʻole AlN a me ka ulu ʻana o nā lako PVT o nā kristal hoʻokahi SiC.

ʻO ka paʻakikī mechanical o kēia mea e kōkua pū i kona kūpaʻa. Loaʻa iā ia ka paʻakikī Vickers ma kahi o 1,880 HV.

ʻO ka Maʻemaʻe Loa-Kiʻekiʻe a me ka Hana ʻana i nā ʻāpana haʻahaʻa me ka uhi ʻana o TaC

ʻO ka mālama ʻana i ka maʻemaʻe kiʻekiʻe loa a me ka hoʻēmi ʻana i ka hana ʻana o nā ʻāpana he mea nui ia i ka hana semiconductor. ʻIke ʻia nā mea lawe i uhi ʻia me CVD TaC no ko lākou mau helu hana ʻāpana haʻahaʻa loa. ʻO ko lākou ʻano ʻili laumania e hōʻemi nui i ka hiki ke haumia nā ʻāpana. ʻO kēia, ma ka huli ʻana, kōkua i ka hoʻomaikaʻi ʻana i ka maʻemaʻe a me ka hua i ka wā o nā kaʻina hana ulu epitaxial.

Hoʻomaikaʻi ʻia ke kaʻina hana hou a me ka hua meUhi ʻana o TaC

Hoʻonui nui ka uhi ʻana o TaC i ka hana hou ʻana i ke kaʻina hana ma ka hana ʻana o nā hāmeʻa GaN a me SiC. ʻO ke kūpaʻa kūikawā o ka uhi ʻana a me ke kūʻē ʻana i nā wahi hana ʻino e hōʻoia i ka mālama ʻana o nā ʻāpana reactor i ko lākou kūpaʻa a me nā ʻano o ka ʻili ma luna o nā wā hana lōʻihi. He mea nui kēia kūlike no ka hoʻokō ʻana i ka waiho ʻana o ka kiʻiʻoniʻoni like, nā ʻano doping pololei, a me nā kūlana wela paʻa ma nā holo hana he nui. Ke noho paʻa nā ʻili o nā lako a ʻaʻohe palaho, hiki i nā mea hana ke hana hou i nā palena hana i makemake ʻia. Hoʻemi kēia wānana i nā ʻokoʻa o nā ʻano o ka hāmeʻa mai ka wafer a i ka wafer a me ka batch a i ka batch.

Hoʻololi pololei kēia hana hou ʻana i nā hua hana kiʻekiʻe. Hoʻemi kahi ʻano hana paʻa i ka nui o nā hemahema i hoʻokumu ʻia e ka hōʻino ʻana o nā mea, ka haumia, a i ʻole nā ​​​​kūlana hana kūlike ʻole. No ka laʻana, ʻo ka inertness kemika o ka uhi ʻana o TaC e pale i nā hopena makemake ʻole ma waena o nā kinoea hana a me nā paia reactor, kahi e hiki ai ke hoʻolauna i nā haumia a hoʻololi paha i ka dynamics kahe kinoea. ʻO kona kūpaʻa wela kiʻekiʻe e hōʻoia i nā ʻāpana ʻaʻole e warp a hōʻino paha ma lalo o nā mahana koʻikoʻi, e mālama ana i nā geometries pololei e pono ai no ka ulu like. Eia kekahi, ʻo ka maʻemaʻe ultra-kiʻekiʻe a me ka hanauna ʻāpana haʻahaʻa e pili ana me ka uhi ʻana o TaC e hōʻemi nui i ka haumia particulate, kahi kumu nui o ka hāʻule ʻana o ka hāmeʻa. Ma ka hōʻemi ʻana i kēia mau kumu maʻamau o ka loli a me nā hemahema, hana nā mea hana i kahi helu nui o nā mea hana GaN a me SiC no kēlā me kēia wafer, e hoʻomaikaʻi ana i ka pono hana holoʻokoʻa a me ka hōʻemi ʻana i ka ʻōpala.

Nā Hoʻohana Koʻikoʻi o ka Uhi ʻana o TaC i ka Hana ʻana o GaN a me SiC

Ka Uhi ʻana o TaC no nā ʻĀpana Reactor

He kuleana koʻikoʻi ko ka uhi ʻana o TaC i ka pale ʻana i nā ʻāpana reactor like ʻole i loko o ka hana ʻana o GaN a me SiC. ʻO nā ʻāpana kikoʻī e pōmaikaʻi ana mai kēia uhi holomua e komo pū me nā mea lawe wafer, nā injectors, nā susceptors, a me nā mea hoʻomehana. I loko o nā reactors SiC CVD, hōʻike nā ʻāpana koʻikoʻi i uhi ʻia me Tantalum Carbide i nā hoʻomaikaʻi hana koʻikoʻi. Kū kēia uhi no kona paʻakikī loa a me ka conductivity metala. Hāʻawi ia i ke kū'ē kūikawā i ka halogen a me ka hydrogen corrosion, e kūpono ana no nā plasma ʻino a me nā wahi wela kiʻekiʻe.

Hāʻawi pū ka uhi ʻana i ka conductivity thermal kiʻekiʻe, e hoʻopau pono ana i ka wela a pale i ka wela kūloko i ka wā o nā kaʻina hana wela kiʻekiʻe. Mālama ia i nā ʻāpana umu koʻikoʻi a me nā mea hana reactor ma nā mahana a hiki i 2200°C, e mālama ana i ke kūpaʻa kemika a me ka mechanical. Loaʻa i ka Tantalum carbide ke kūpaʻa ikaika i ka corrosion i ka hapa nui o nā waikawa a me nā alkalis, e pale ana i ka hōʻino ʻana o ka substrate i nā wahi corrosive. Kūʻē ia i ka hydrogen, ammonia, monosilane, a me ka silicon, e hāʻawi ana i ka pale i nā hoʻonohonoho kemika ʻino. ʻO kēia pale i hoʻonui ʻia e alakaʻi i kahi ola o nā ʻāpana i hoʻolōʻihi ʻia. Hoʻohanohano pū ka uhi ʻana o TaC i ka maʻemaʻe ultra-kiʻekiʻe, me nā pae haumia ma lalo pinepine o 5 ppm. Hoʻemi nui kēia i nā hemahema e like me nā micropores a me nā lua etch i nā kristal SiC, e hoʻomaikaʻi ana i ka maikaʻi o ke kristal.

ʻO ka uhi ʻana o TaC no nā keʻena Etch a me nā lako hana hana Plasma

He mea nui like ka uhi ʻana o TaC no nā keʻena etch a me nā lako hana plasma. ʻO kona paʻakikī kūikawā a me ka inertness kemika e kūʻē i ka ʻaʻahu a me ka palaho mai nā wahi plasma abrasive a me nā hopena kemika ʻino. Hōʻoia kēia e hana mau nā ʻāpana ma lalo o nā kūlana koʻikoʻi. ʻO ka maʻemaʻe kiʻekiʻe loa o ka uhi ʻana, me nā pae haumia ma lalo o 5 ppm, e hōʻemi ana i nā pilikia haumia i nā kaʻina hana ulu kristal.

ʻO ka hoʻopili ikaika a me ka hoʻonui wela haʻahaʻa e pale aku i ka haki a i ʻole ka delamination i ka wā o ka thermal cycling. He mea koʻikoʻi kēia no ka mālama ʻana i ka pololei a me ke kūlike i ka hana semiconductor. I ka ulu ʻana o GaN/SiC epitaxial, pale ka uhi i nā hopena kinoea a hoʻemi i nā hemahema, e hoʻomaikaʻi ana i ka hua holoʻokoʻa. ʻO nā mea maʻemaʻe kiʻekiʻe a me ka uhi TaC paʻa e hoʻemi i ka hanauna ʻāpana a me ka outgassing. Hoʻemi kēia i ka pilikia o ka haumia wafer a me nā hemahema. Hāʻawi ka uhi paʻa i ke kū'ē maikaʻi loa i ka erosion plasma a me ka hoʻouka kemika, e hoʻolōʻihi ana i ke ola hana o nā ʻāpana.

ʻAʻole wale ka pono o ka uhi ʻana o TaC; he mea nui ia no ka hiki ʻana i ka hana ʻana i nā mea hana GaN a me SiC me ka hilinaʻi, hana kiʻekiʻe, a me ke kumukūʻai kūpono. Hoʻēmi ia i nā pilikia haumia a me ka hōʻino ʻana i loko o kā lākou mau kaʻina hana. E ulu wale ana kāna kuleana i ka hoʻomau ʻana o kēia mau ʻenehana holomua i ka ulu ʻana. Hōʻoia kēia i ka hoʻomau ʻana o ka hana hou a me ka hoʻonui ʻana o ka mākeke.

Nā nīnau i nīnau pinepine ʻia

He aha ka uhi ʻana o TaC?

ʻO ka uhi ʻana o TaC kahi papa pale o Tantalum Carbide i hoʻopili ʻia i nā ʻāpana graphite. Hoʻohana nā mea hana i kahi kaʻina hana Chemical Vapor Deposition (CVD). Hoʻonui kēia hui keramika paʻakikī a refractory i ke kūpaʻa a me ke kū'ē kemika no nā noi semiconductor.

Pehea e hoʻomaikaʻi ai ka uhi ʻana o TaC i ka hua hana?

Hoʻomaopopo ka uhi ʻana o TaC i nā kūlana hana kūlike. Pale ia i ka hōʻino ʻana o nā mea a me ka haumia. Hoʻemi kēia kūpaʻa i nā hemahema a me nā ʻano like ʻole o nā ʻano o ka hāmeʻa. Loaʻa i nā mea hana kahi helu kiʻekiʻe o nā hāmeʻa GaN a me SiC hana no kēlā me kēia wafer.

No ke aha i makemake ʻia ai ka uhi ʻana o TaC ma mua o ka uhi ʻana o SiC i kekahi mau noi?

Hāʻawi ka uhi ʻana o TaC i ka inertness kemika maikaʻi loa a me ke kūpaʻa i ka palaho i hoʻohālikelike ʻia me ka uhi ʻana o SiC. Kūpaʻa ia i nā wahi kemika ʻoi aku ka paʻakikī a me nā mahana kiʻekiʻe. ʻOi aku ka kūpono o kēia no nā kaʻina hana koi kikoʻī ma ka hana ʻana o GaN a me SiC.

He aha nā ʻāpana kikoʻī e pōmaikaʻi ai mai ka uhi ʻana o TaC i ka hana ʻana o GaN/SiC?

He pōmaikaʻi nui nā ʻāpana reactor e like me nā mea lawe wafer, nā injectors, nā susceptors, a me nā mea hoʻomehana. Hoʻohana pū nā keʻena etch a me nā lako hana plasma i ka uhi TaC. Mālama ia i kēia mau ʻāpana mai nā kinoea corrosive, nā mahana kiʻekiʻe, a me ka plasma abrasive.

E hana i ka hana aʻe

Ua mākaukau e lawe mai i ke kūpaʻa mua ʻole a me ka hua i kāu mau kaʻina hana GaN a me SiC?

E kāhea aku i kā mākou poʻe loea ʻepekema mea i kēia lāe kūkākūkā pehea e hiki ai i kahi hopena uhi TaC ke hoʻololi i ka hana o kāu reactor MOCVD a i ʻole CVD.