Kuputira TaC kwakakosha pakugadzirwa kwemidziyo yeGaN neSiC. Inopa dziviriro yepamusoro kubva kunzvimbo dzinopisa, inowedzera kugadzikana kwekupisa, uye inodzivirira kusvibiswa. Zvinhu izvi zvakakosha kuti michina ishande zvakanaka uye iwane goho rakanaka. Musika wemagetsi weGaN muAsia-Pacific unoratidza kukura kwegore negore kwe19.33% pakati pa2025 na2032. Musika wese wemidziyo iyi, unokosheswa paUSD 2.24 bhiriyoni muna 2023, unotarisira kusvika paUSD 18 bhiriyoni muna 2032, uchikura pa25% CAGR. Kuwedzera uku kwakakura kwemusika kunoratidza kudiwa kwemhinduro dzakasimba dzekugadzira.
Zvinhu Zvinokosha Zvaunofanira Kuziva
- Kuvhara kweTaC kunodzivirira michina inoshandiswa kugadzira michina yeGaN neSiC. Kunomisa kukuvara kunokonzerwa nemakemikari akasimba uye kupisa kwakanyanya.
- Midziyo yeGaN neSiC iri nani pane michina yekare yesilicon. Inoshanda nekukurumidza uye inoshandisa simba shoma, asi yakaoma kugadzira.
- Kuputira TaC kunobatsira kuti michina yeGaN neSiC ive yakachena. Kunodzivirira tsvina diki kuti isapinde mumidziyo.
- Kuvhara kweTaC kunoita kuti michina igadziriswe nenzira imwe chete nguva dzese. Izvi zvinoreva kuti michina yakawanda yakanaka inogadzirwa uye mishoma inoraswa.
- Kuvhara TaC kwakakosha zvikuru pakugadzira magetsi matsva emagetsi. Kunobatsira kuti michina iyi yemhando yepamusoro ishande zvakanaka uye igare kwenguva refu.
Zvishandiso zveGaN neSiC: Chizvarwa Chinotevera cheMagetsi Emagetsi
Pfupiso yeGaN neSiC Device Betsero
Zvishandiso zveGallium Nitride (GaN) neSilicon Carbide (SiC) zvinomiririra kukwira kukuru mumagetsi emagetsi. Zvinopa kuvandudzwa kukuru pane zvinhu zvechinyakare zvesilicon. Midziyo yeSiC, semuenzaniso, inoratidza hunhu hwakanaka mumatanho akati wandei akakosha:
| Paramita | SiC | Silikoni (Si) | Zvakanakira |
|---|---|---|---|
| Bhandiji | 3.2 eV | 1.1 eV | Kukwira ka3 |
| Kusadzivirirwa (RDS(pa)) | Kusvika pa10x pasi | Yepamusoro | Kurasikirwa kwekufambisa kwemhepo kwakaderedzwa |
| Kumhanya Kwekuchinja | 10-100x nekukurumidza | Zvishoma nezvishoma | Kurasikirwa kwenguva pfupi kwakaderera |
| Kupisa kweMax Junction | 200–250°C | 125–150°C | Nzvimbo yekushanda yepamusoro kaviri |
| Kufambisa kwekupisa | 3.7 W/cm·K | 1.5 W/cm·K | Kupisa kupisa kuri nani ka2.5x |
| Munda weKuparara | 3 MV/cm | 0.3 MV/cm | Kuvharira kwemagetsi kwakakwira kagumi |
Midziyo yeSiC inobudirira zvakanyanya uye inoderedza kurasikirwa kwesimba. Inoderedza kurasikirwa kwekufambisa uye kushandura. Bandgap yeSiC yakakwira katatu kupfuura yesilicon, zvichibvumira kuti pave nezvikamu zvakatetepa zvekudhonza. Izvi zvinoderedza kuramba kwemagetsi nekusvika kagumi kune voltage rating imwechete. 1200V SiC MOSFET ine kurasikirwa kwekufambisa kwakaderera kashanu pane silicon IGBT. Midziyo yeSiC inochinjawo nekukurumidza ka10 kusvika ku100 kupfuura silicon, zvichideredza kurasikirwa kwenguva pfupi. Madiode eSiC Schottky anobvisa kudzoreredzwa kwemagetsi, achibvisa chinhu chikuru chekurasikirwa. Midziyo iyi inoshanda pakupisa kwakanyanya, nekupisa kwakanyanya kwejunction ye200–250°C, kaviri kupfuura silicon. Inewo thermal conductivity iri nani ka2.5, ichivandudza kupisa. Mabhondi akasimba eSiC anodzivirira electromigration uye gate oxide breakdown, zvichibatsira kuti irarame kwenguva refu.
Matambudziko Ekugadzira eGaN neSiC Devices
Kugadzira michina yeGaN neSiC kune matambudziko akasiyana ekugadzira. Matambudziko aya anobva muhunhu hwezvinhu uye maitiro akaomarara ekugadzira.
Kune zvishandiso zveGaN, vagadziri vanosangana nematambudziko akati wandei:
- Hunhu hweKristaro uye Kuwanda Kwakakwana Kwemaronda: Kuwana kristalo yepamusoro ine defect density shoma kwakaoma. GaN inowanzokura pa substrates dzakadai sesafire kana silicon, dzine lattice constants dzakasiyana. Kusawirirana uku kunogadzira zvikanganiso panguva yekukura kwe epitaxial, zvichikanganisa mashandiro emudziyo.
- Maitiro Ekukura kweEpitaxialNzira dzakadai seMetal-Organic Chemical Vapor Deposition (MOCVD) dzinodhura uye dzinoda kudzorwa kwakanyatsojeka. Hydride Vapor Phase Epitaxy (HVPE) inopa kukura nekukurumidza asi inoomesa maitiro egasi uye kunaka kwenzvimbo.
- Kudhakwa uye KufananaKuwana huwandu hwakafanana hwedoping, kunyanya kune p-type GaN, kwakaoma. Izvi zvinokonzerwa nehunhu hwechinhu ichi uye maitiro akaomarara emakemikari.
- Kuwanikwa kweSubstrate uye Mutengo: Kuwanikwa uye mutengo wezvishandiso zvinokanganisa kugona kweGaN kukura. Zvishandiso zvesilicon zvakachipa asi zvinounza kusawirirana kukuru kwelattice.
Kugadzirwa kwemidziyo yeSiC kunosanganawo nematambudziko makuru:
- Kuoma Kwakanyanya uye Kusasimba: Kuomarara kweSiC (Mohs 9) uye kuputsika kweganda zvinoomesa kugadzirwa. Kupukuta kwewafer kunononoka uye hakushandi, kunoda slurry dzakagadzirwa.
- Kubata Wafer: Kubata maSiC wafers kwakaoma nekuda kwekuoma kwawo. Izvi zvinokonzeresa kutsemuka, kutsemuka, uye kusvibiswa kwezvikamu.
- Zvinodiwa zveEpitaxy: Epitaxy yeSiC inoda tembiricha yakakwira kupfuura silicon. Izvi zvinopfupisa hupenyu hwezvikamu zvemukamuri uye zvinowedzera mari yekugadzirisa.
- Kudyarwa kweIon: Kuisirwa kwearuminiyamu pakuisa ma ion faces emhando yep-type kunokonzera matambudziko ekusagadzikana kwemaion source. Ma ion source haapararire nyore uye anogona kugadzira ma craters. Kupisa kwakanyanya (1800°C) kunogona kuita kuti pamusoro payo pave necarbon.
Dambudziko Guru: Kuora Kwezvinhu Uye Kusvibiswa Mukugadzirisa
Kuora kwemidziyo uye Kukukurwa kwevhu munzvimbo dzakaoma
Midziyo yekugadzira semiconductor inosangana nekuora kukuru uye kupera kwezvinhu. Nzvimbo dzakaoma, kusanganisira kusangana nemakemikari anoparadza uye maitiro ekukwesha, zvinokonzera matambudziko aya. Izvi zvinoderedza hupenyu hwemichina uye kukanganisa kushanda zvakanaka kwekugadzira. Zvishandiso zvekutema nekuisa zvinhu, kunyanya, zvinotsungirira mamiriro akaipisisa. Zvinosangana neplasma, tembiricha yakakwira, uye makemikari anokonzera kukanganiswa. Izvi zvinokonzera kukurwa kwevhu uye kurwiswa nemakemikari. Mamiriro akadaro pamwe chete anobatsira mukutadza kwemichina nekuderedza mashandiro ezvishandiso uye kuderedza mashandiro ezvishandiso.
"Kukanganisa kwakabatana nengura" kunowanzoitika. Kuora kunopedza simba rekubatanidza miganhu yegorosi. Kupera simba uku kunobvumira kuti zvidimbu zvekuneta zvinokonzerwa nekukweshana zvipararire nekukurumidza. Makwesha aya anopararira munzvimbo dzakaunganidzwa dzakapfuma mutin. Iyi nzira yekukuvadza kwakabatana inonetsa kudzvinyirira nehunyanzvi hwechinyakare hwekufukidza pamusoro, kunyanya munzvimbo dzine ngura dzakakomba.
Mhedzisiro yeKusvibiswa paGaN neSiC Device Performance
Kusvibiswa kunokanganisa zvakanyanya mashandiro uye kugona kwemidziyo yeGaN neSiC. Kunyangwe tsvina diki inogona kukonzera zvikanganiso, zvichikonzera kusashanda zvakanaka kwemidziyo kana kudzikira kwekushanda kwayo. Kune michina yeGaN, tsvina chaiyo inowanzo kukonzera matambudziko:
- Misungo yemagetsi yakadzika (E2 neE4): Misungo iyi inowedzera mushure mekupiswa kweproton neelectron. Inokonzera gate nedrain-lag phenomena, zvichikonzera kuparara kwemagetsi uye kuora kweAlGaN/GaN HEMTs.
- Kubviswa kwenzvimbo: Kubviswa kwe screws dzakavhurika kunokurudzira kubuda kwegedhi muAlGaN/GaN HEMTs. Kubviswa kwe screws kwakashongedzwa neIndium (In) kunokanganisa InAlN/GaN HEMTs. Zvinobatanidzawo ne deep electron traps, trapping, subthreshold current leakage, uye kuora kwese.
- Nzvimbo dzisina vanhu dzeGallium dzakasanganiswa neSilicon (Si) kana Oxygen (O): Macomplex aya anoshanda semisungo mikuru yegomba mu n-GaN ne n-AlGaN.
- Kabhoni (C)Kabhoni inoshandawo semusungo mukuru wegomba mu n-GaN ne n-AlGaN.
- Hydrogen: Kusachena uku, kwakajairika muMOCVD neNH3-rich MBE zvinorimwa, kunokanganisa threshold voltage shifts uye transconductance degradation pasi peproton irradiation.
- Vagamuchiri vakadzama: Kuunzwa kwema deep acceptors mu barrier layer kunotsanangura shanduko mu threshold voltage uye kufamba kwe channel mu AlGaN/GaN transistors.
- Misungo yakadzika iri muGaN buffer layer: Misungo iyi inogona kutungamira kumhedzisiro yakafanana neyezvinogamuchira zvakadzama. Inobatsira pakupera kwechikamu che2DEG uye kupararira kwemaerekitironi e2DEG.
Maitiro eTaC Coating pakugadzirisa matambudziko makuru ekugadzira
Kusashanda kwemakemikari kweTaC Coating kunoshamisa
Kuputira kweTaC kunoita kuti pave nekusashanda zvakanaka kwemakemikari. Izvi zvinoita kuti ive yakakosha zvikuru mukugadzira ma semiconductor. Inodzivirira kukurwa kwemhepo kubva kumagasi anoparadza akadai sechlorides nefluorides. Kuputira uku kunochengetedza kushanda kwakaderera munzvimbo dzine tembiricha yakakwira. Izvi zvinodzivirira makemikari asingadiwe nemagasi anochinja-chinja. Hunhu uhwu hwakakosha pakuona kuchena kwemaitiro uye kuiswa kwezvinhu zvemhando yepamusoro. Inonyanya kubatsira mashandisirwo anosanganisira Silicon Carbide Wafer Boats nezvimwe zvinhu zvakakosha.
"Kana tichienzanisa neSiC coating, TaC ine makemikari asina simba uye inodzivirira ngura zvakanyanya."
Machira eTaC anodzivirira ammonia inopisa. Anodzivirirawo hydrogen vapors, silicon vapors, uye simbi dzakanyungudutswa. Machira aya anodzivirira kubva kuH2, NH3, SiH4, uye Si munzvimbo dzine makemikari akaomarara.
Kugadzikana Kwekupisa Kwakanyanya uye Kuomarara Kwemakanika kweTaC Coating
Kugadzikana kwakanyanya kwekupisa uye kuomarara kwemuchina zvakakosha pakugadzirwa kweGaN neSiC. Graphite yakaputirwa neTaC inoratidza kudzivirirwa kwakanyanya kwemakemikari pakuora kana tichienzanisa negraphite isina chinhu kana graphite yakaputirwa neSiC. Inoramba yakagadzikana pakupisa kwakanyanya, ichisvika 2600°C. Haibatike nezvinhu zvakawanda zvesimbi. Izvi zvinoita kuti ive coating inofarirwa yekukura kwekristaro imwe chete yechizvarwa chechitatu uye etching yewafer. Inonyanya kubatsira pamidziyo yeMOCVD mukukura kwekristaro imwe chete yeGaN kana AlN uye michina yePVT mukukura kwekristaro imwe chete yeSiC. Izvi zvinowedzera zvakanyanya kunaka kwekristaro.
Machira eTantalum Carbide (TaC) anogona kushandiswa zvakanaka pakupisa kwakanyanya kusvika 2600°C. Haasangani nezvinhu zvakawanda zvesimbi. Machira aya anoonekwa seakanakisa pakukura kwekristaro imwe chete yechizvarwa chechitatu uye etching yewafer. Zvikuru, anobatsira kukura kwemidziyo yeMOCVD yemakristaro imwe chete yeGaN kana AlN uye kukura kwemidziyo yePVT yemakristaro imwe chete yeSiC.
Kuomarara kwechinhu ichi kunoitawo kuti chigare kwenguva refu. Chine kuomarara kweVickers kweinenge 1,880 HV.
| Rudzi rwekuputira | Kuomarara kweVickers (HV) |
|---|---|
| Tantalum carbide (TaC) | 1600 kusvika 1800 |
| Titanium carbide (TiC) | 3200 |
| Boron carbide (B4C) | 3400 kusvika 3700 |
| Rudzi rwekuputira | Kuoma (GPa) |
|---|---|
| ta-C (Si 1.25 pa.%) | 41 |
| ta-C (Si 3.85 pa.%) | 33 |
| ta-C (Si 6.04 pa.%) | 23 |
| SiC | 27 |
Kuchena Kwakanyanya uye Kugadzira Zvidimbu Zvishoma neTaC Coating
Kuchengetedza kuchena kwakanyanya uye kuderedza kugadzirwa kwezvikamu zvakakosha mukugadzirwa kwema semiconductor. Zvigadzirwa zveCVD TaC zvakaputirwa zvinozivikanwa nekukura kwazvo kwezvikamu zvishoma. Hunhu hwazvo hwakatsetseka pamusoro hunoderedza zvakanyanya mukana wekusvibiswa kwezvikamu. Izvi, zvinobatsirawo kuvandudza kuchena uye kubereka goho panguva yekukura kwe epitaxial.
Kuvandudzwa kweMaitiro uye Kubudirira neKuputira TaC
Kuputira TaC kunowedzera zvakanyanya kudzokorora kwemaitiro mukugadzirwa kwemidziyo yeGaN neSiC. Kugara kwenguva refu kwejira iri uye kuramba kwaro mumamiriro ezvinhu akaomarara ekugadzirisa kunoita kuti zvikamu zvereactor zvirambe zvakanaka uye hunhu hwazvo hwepamusoro kwenguva yakareba yekushanda. Kuenderana uku kwakakosha kuti pave nekuiswa kwemafirimu akafanana, mapurofayiri chaiwo ekushandisa doping, uye mamiriro ekupisa akagadzikana mukati menguva dzakawanda dzekugadzira. Kana nzvimbo dzemidziyo dzichiramba dzakagadzikana uye dzisina kuora, vagadziri vanogona kuburitsa maparamita emaitiro anodiwa nenzira yakavimbika. Kufungidzira uku kunoderedza kusiyana kwehunhu hwemudziyo kubva kune wafer kuenda kune wafer uye batch kuenda kune batch.
Kudzokororwa uku kuri nani kunoshandura zvakananga goho guru rekugadzira. Nzvimbo yakagadzikana yemaitiro inoderedza kuwanda kwezvikanganiso zvinokonzerwa nekuora kwezvinhu, kusvibiswa, kana mamiriro ekugadzirisa asingaenderane. Semuenzaniso, kusagadzikana kwemakemikari kweTaC coating kunodzivirira mafambiro asingadiwe pakati pemagasi emaitiro nemadziro earactor, izvo zvinogona kukonzera kusvibiswa kana kushandura simba rekufamba kwegasi. Kugadzikana kwayo kwakanyanya kwekupisa kunoita kuti zvikamu zvisatendere kana kuora pasi pekupisa kwakanyanya, zvichichengetedza jiometri chaiyo yakakosha pakukura kwakafanana. Uyezve, kuchena kwakanyanya uye kugadzirwa kwezvikamu zvishoma zvine chekuita neTaC coating kunoderedza zvakanyanya kusvibiswa kwezvikamu, chikonzero chikuru chekukundikana kwemidziyo. Nekuderedza izvi zvinowanzo shandiswa pakusiyana uye zvikanganiso, vagadziri vanogadzira huwandu hwakawanda hwezvishandiso zvinoshanda zveGaN neSiC pawafer imwe neimwe, vachivandudza kushanda zvakanaka kwekugadzira uye kuderedza marara.
Mashandisirwo Akakosha eTaC Coating muGaN neSiC Production
Kuputira TaC yeReactor Components
Kuputira TaC kunoita basa guru mukudzivirira zvikamu zvakasiyana-siyana zvereactor mukati mekugadzirwa kweGaN neSiC. Zvimwe zvikamu zvinobatsira kubva mukuputira uku kwepamusoro zvinosanganisira wafer carriers, injectors, susceptors, uye heaters. MuSiC CVD reactors, zvikamu zvakakosha zvakaputirwa neTantalum Carbide zvinoratidza kuvandudzwa kukuru kwekushanda. Kuputira uku kunoshamisa nekuoma kwayo kwakanyanya uye simbi inofambisa. Kunodzivirira zvakanyanya halogen nehydrogen corrosion, zvichiita kuti ive yakakodzera plasma yakaoma uye nzvimbo dzinopisa zvakanyanya.
Kuputira uku kunopawo kufambiswa kwekupisa kwakanyanya, kuchibvisa kupisa zvinobudirira uye kudzivirira kupisa kwakanyanya munzvimbo inodziya panguva yekupisa kwakanyanya. Kunodzivirira zvikamu zvakakosha zvechoto uye reactor pakupisa kusvika ku2200°C, kuchichengetedza kugadzikana kwemakemikari nemakemikari. Tantalum carbide inodzivirira ngura zvakanyanya kune akawanda maacid nealkali, ichidzivirira kukuvara kwesubstrate munzvimbo dzinopisa. Inodzivirira hydrogen, ammonia, monosilane, uye silicon, ichipa dziviriro munzvimbo dzakaoma dzemakemikari. Dziviriro iyi yakawedzerwa inotungamira kune hupenyu hwakareba hwechikamu. Kuputira kweTaC kunoratidzawo kuchena kwakanyanya, nemazinga ekusvibiswa kazhinji ari pasi pe5 ppm. Izvi zvinoderedza zvakanyanya zvikanganiso zvakaita sema micropores nema etch pits mumakristasi eSiC, zvichivandudza mhando yekristaro.
Kuputira TaC yeEtch Chambers nePlasma Processing Equipment
Kuputira TaC kwakakosha zvakaenzana kumakamuri ekucheka uye michina yekugadzirisa plasma. Kuoma kwayo kwakanyanya uye kusashanda kwemakemikari kunodzivirira kupera nekuora kubva munzvimbo dzinopisa dzeplasma uye makemikari akaomarara. Izvi zvinoita kuti zvikamu zvirambe zvichishanda mumamiriro ezvinhu akaoma. Kuchena kwakanyanya kwepurasitiki, ine huwandu hwekusachena huri pasi pe5 ppm, kunoderedza njodzi dzekusvibiswa mukukura kwemakristaro.
Kunamatira kwakasimba uye kuwedzera kushoma kwekupisa kunodzivirira kutsemuka kana kucheka panguva yekupisa. Izvi zvakakosha pakuchengetedza kurongeka uye kugara kwenguva refu mukugadzirwa kwema semiconductor. Mukukura kweGaN/SiC epitaxial, kupfeka uku kunodzivirira magasi uye kunoderedza zvikanganiso, zvichivandudza goho rose. Zvinhu zvine hutsanana hwakawanda uye kupfeka kwakasimba kweTaC kunoderedza kugadzirwa kwezvimedu uye kubuda kwegasi. Izvi zvinoderedza njodzi yekusvibiswa kwewafer uye zvikanganiso. Kupfeka uku kwakasimba kunopa kudzivirira kwakanaka kukurwa kweplasma uye kurwiswa kwemakemikari, zvichiwedzera hupenyu hwekushanda kwezvikamu.
Kuputira TaC hakungobatsiri chete; kwakakosha pakugonesa kugadzirwa kweGaN neSiC zvishandiso zvinobudirira, zvinoshanda zvakanyanya, uye zvisingadhuri. Kunoderedza matambudziko ekusvibiswa nekuora ari mumabasa avo ekugadzira. Basa rayo richakura chete sezvo matekinoroji aya epamusoro achiramba achikura. Izvi zvinovimbisa hunyanzvi hutsva uye kukura kwemusika.
Mibvunzo Inowanzo bvunzwa
Chii chinonzi TaC coating?
Kuputira TaC irukoko rwekudzivirira rweTantalum Carbide runoiswa pazvikamu zvegraphite. Vagadziri vanoshandisa nzira yeChemical Vapor Deposition (CVD). Iyi ceramic compound yakaoma, inodzivisa kusimba uye inosimudzira kugadzikana uye kuramba makemikari kune zvinoshandiswa zve semiconductor.
Kuputira TaC kunovandudza sei goho rekugadzira?
Kuvhara kweTaC kunoita kuti zvinhu zvirambe zvichishanda zvakanaka. Kunodzivirira kuora kwezvinhu uye kusvibiswa. Kugadzikana uku kunoderedza zvikanganiso uye kusiyana kwehunhu hwemudziyo. Vagadziri vanowana huwandu hwakawanda hwezvishandiso zvinoshanda zveGaN neSiC pawafer imwe neimwe.
Sei kuputira TaC kuchisarudzwa pane kuputira SiC mune mamwe maapplication?
Kuputira TaC kunopa kusapinda kwemakemikari uye kuramba ngura kwepamusoro-soro kana tichienzanisa neSiC coating. Kunotsungirira mamiriro emakemikari akaomarara uye tembiricha yakakwira. Izvi zvinoita kuti ive yakakodzera kune mamwe maitiro akaoma mukugadzirwa kweGaN neSiC.
Ndezvipi zvikamu chaizvo zvinobatsira kubva mukuputira kweTaC mukugadzirwa kweGaN/SiC?
Zvikamu zvereactor zvakaita sewafer carriers, injectors, susceptors, uye heaters zvinobatsira zvikuru. Etch chambers ne plasma processing equipment zvinoshandisawo TaC coating. Inodzivirira zvikamu izvi kubva kumagasi anoparadza, tembiricha yakakwira, uye abrasive plasma.
Tora Danho Rinotevera
Wagadzirira kuunza kugadzikana kusati kwamboitika uye kuzvipira kune maitiro ako eGaN neSiC?
Bata nyanzvi dzedu dzesainzi yezvinhu nhasikuti tikurukure kuti mhinduro yeTaC coating ingashandura sei mashandiro eMOCVD kana CVD reactor yako.
Nguva yekutumira: Mbudzi-14-2025