Kungani i-TaC Coating ibalulekile ekukhiqizweni kwamadivayisi e-GaN kanye ne-SiC?

Ukumbozwa kwe-TaC kubalulekile ekukhiqizweni kwamadivayisi e-GaN kanye ne-SiC. Kuhlinzeka ngokuvikelwa okuphezulu ezindaweni zenqubo ebolile, kuthuthukisa ukuzinza kokushisa, futhi kuvimbela ukungcola. Lezi zici zibalulekile ekufinyeleleni ukusebenza okuphezulu kwamadivayisi kanye nokukhiqiza. Imakethe yamadivayisi kagesi e-Asia-Pacific GaN ibikezela izinga lokukhula lonyaka elihlanganisiwe elingu-19.33% phakathi kuka-2025 no-2032. Imakethe iyonke yala madivayisi, enenani lama-USD 2.24 billion ngo-2023, ilindele ukufinyelela ama-USD 18 billion ngo-2032, ikhula ku-25% CAGR. Lokhu kwanda okukhulu kwemakethe kugcizelela isidingo sezixazululo zokukhiqiza eziqinile.

Izinto Ezibalulekile Okufanele Uzicabangele

• Ukugqoka kwe-TaC kuvikela imishini esetshenziselwa ukwenza amadivayisi e-GaN kanye ne-SiC. Kuvimba umonakalo ovela kumakhemikhali anamandla kanye nokushisa okuphezulu.
• Amadivayisi e-GaN kanye ne-SiC angcono kunamadivayisi amadala e-silicon. Asebenza ngokushesha futhi asebenzisa amandla amancane, kodwa kunzima ukuwenza.
• Ukwembozwa kwe-TaC kusiza ukwenza amadivayisi e-GaN kanye ne-SiC ahlanzeke. Kuvimba izingcezu ezincane zokungcola ukuthi zingangeni kumadivayisi.
• Ukwembozwa kwe-TaC kuqinisekisa ukuthi amadivayisi enziwa ngendlela efanayo njalo. Lokhu kusho ukuthi kwenziwa amadivayisi amaningi amahle futhi ambalwa ayachithwa.
• Ukugqoka kwe-TaC kubaluleke kakhulu ekwenzeni ama-elekthronikhi amasha anamandla. Kusiza la madivayisi athuthukile ukuthi asebenze kahle futhi ahlale isikhathi eside.

Amadivayisi e-GaN kanye ne-SiC: Isizukulwane Esilandelayo Se-Power Electronics

Ukubuka konke kwezinzuzo zedivayisi ye-GaN ne-SiC

Amadivayisi e-Gallium Nitride (GaN) kanye ne-Silicon Carbide (SiC) amelela intuthuko ebalulekile kuma-electronics anamandla. Anikeza ukuthuthuka okukhulu kunezingxenye zendabuko ezisekelwe ku-silicon. Amadivayisi e-SiC, isibonelo, abonisa izici eziphakeme kumapharamitha amaningana abalulekile:

Amadivayisi e-SiC athola ukusebenza kahle okuphezulu kanye nokulahlekelwa kwamandla okuphansi. Anciphisa kokubili ukulahlekelwa kokuqhuba kanye nokushintsha. Igebe le-bandgap le-SiC liphakeme kathathu kunele-silicon, okuvumela izendlalelo ezincane zokukhukhuleka. Lokhu kunciphisa ukumelana nokushisa ngezikhathi ezifika kweziyishumi ngesilinganiso esifanayo se-voltage. I-1200V SiC MOSFET inokulahlekelwa kokuqhuba okuphansi ngokuphindwe kahlanu kune-silicon IGBT. Amadivayisi e-SiC ashintsha futhi ngokushesha izikhathi eziyi-10 kuya kweziyi-100 kune-silicon, okunciphisa ukulahlekelwa okuguqukayo. Ama-diode e-SiC Schottky aqeda ukubuyiselwa emuva, asusa umthombo omkhulu wokulahlekelwa. Lawa madivayisi asebenza emazingeni okushisa aphezulu, ngokushisa okuphezulu kwe-junction okungu-200–250°C, okuphindwe kabili kune-silicon. Aphinde abe nokuqhuba kokushisa okungcono ngokuphindwe ka-2.5, okuthuthukisa ukushabalaliswa kokushisa. Izibopho ze-athomu eziqinile ze-SiC zimelana nokufuduka kwe-electromigration kanye nokuqhekeka kwe-gate oxide, okufaka isandla empilweni ende.

Izinselele Zokukhiqiza Zamadivayisi e-GaN kanye ne-SiC

Ukukhiqiza amadivayisi e-GaN kanye ne-SiC kuletha izinselele zokukhiqiza ezihlukile. Lezi zinselele zivela ezimfanelweni zezinto kanye nezinqubo zokukhiqiza eziyinkimbinkimbi.

Kumadivayisi e-GaN, abakhiqizi babhekene nezingqinamba eziningana:

• Ikhwalithi Yekristalu Nobuningi Bamaphutha: Ukufinyelela ikhwalithi ephezulu yekristalu ngobuningi obuphansi besici kunzima. I-GaN ivame ukukhula ezisekelweni ezifana ne-sapphire noma i-silicon, ezinezingqimba ezihlukene ze-lattice. Lokhu kungafani kudala amaphutha ngesikhathi sokukhula kwe-epitaxial, okuthinta ukusebenza kwedivayisi.
• Izinqubo Zokukhula Kwe-EpitaxialIzindlela ezifana ne-Metal-Organic Chemical Vapor Deposition (MOCVD) ziyabiza futhi zidinga ukulawulwa okunembile. I-Hydride Vapor Phase Epitaxy (HVPE) inikeza ukukhula okusheshayo kodwa yenza kube nzima ukusabela kwesigaba segesi kanye nekhwalithi yobuso.
• Ukuphuza izidakamizwa kanye nokufana: Ukufinyelela amazinga afanayo okusebenzisa izidakamizwa, ikakhulukazi ku-p-type GaN, kuyinselele. Lokhu kungenxa yezakhiwo zale nto kanye nezinqubo zamakhemikhali eziyinkimbinkimbi.
• Ukutholakala Kwe-Substrate kanye NezindlekoUkutholakala kanye nezindleko zama-substrate kuthinta ukusabalala kwe-GaN. Ama-substrate e-silicon ashibhile kodwa aletha ukungafani okukhulu kwe-lattice.

Ukukhiqizwa kwamadivayisi e-SiC nakho kuhlangabezana nobunzima obukhulu:

• Ukuqina Okukhulu Nokugqama: Ubulukhuni be-SiC (Mohs 9) kanye nokuqhekeka kwenza kube nzima ukukhiqiza. Ukupholisha i-wafer kuhamba kancane futhi akusebenzanga kahle, kudinga ama-slurry akhethekile.
• Ukuphathwa Kwesitsha Esilukiwe: Ukuphatha ama-wafer e-SiC kunzima ngenxa yokuthi ayaphuka. Lokhu kuholela ekuqhekekeni, ekuqhekekeni, nasekungcoleni kwezinhlayiya.
• Izidingo ze-Epitaxy: I-Epitaxy ye-SiC idinga amazinga okushisa aphezulu kune-silicon. Lokhu kunciphisa isikhathi sokuphila kwezingxenye zegumbi futhi kwandisa izindleko zokulungisa.
• Ukufakelwa kwe-Ion: Ukufakelwa kwe-aluminium kwezinkinga zokuqina komthombo we-ion we-p-type doping. Ama-Dopants awasabalali kalula futhi angakha ama-crater. Amazinga okushisa aphezulu okushisa (1800°C) angenza ubuso bube yi-carbon.

Inkinga Eyinhloko: Ukuwohloka Kwezinto Nokungcola Ekucutshungulweni

Ukugqwala Nokuguguleka Kwemishini Ezindaweni Ezinzima

Imishini yokukhiqiza i-semiconductor ibhekene nokuwohloka okukhulu kwezinto zokwakha kanye nokuguguleka. Izindawo ezibucayi, okuhlanganisa ukuchayeka kumakhemikhali agqwalisayo kanye nezinqubo zokuhudula, zibangela lezi zinkinga. Lokhu kuholela ekunciphiseni isikhathi sokuphila kwemishini kanye nokusebenza kahle kokukhiqiza okuphazamisekile. Amathuluzi okuqopha nokubeka, ikakhulukazi, abekezelela izimo ezimbi kakhulu. Ahlangabezana ne-plasma, amazinga okushisa aphezulu, kanye namakhemikhali asabelayo. Lezi zinto zibangela ukuguguleka kanye nokuhlaselwa ngamakhemikhali. Lezi zimo zihlangene zinegalelo ekwehlulekeni kwemishini ngokwehlisa izinto zokwakha kanye nokunciphisa ukusebenza kwamathuluzi.

Kuvame ukuba khona “indlela yokuhluleka kokuhlanganiswa kokugqwala nokuguguleka”. Imidiya egqwala inciphisa amandla okubopha imingcele yokusanhlamvu. Lokhu kubuthakathaka kuvumela imifantu yokukhathala okubangelwa ukungqubuzana ukuthi isakazeke ngokushesha. Le mifantu isakazeka ezindaweni zokuhlanganisa zesigaba ezicebile ngethini. Le ndlela yokulimala okuhlanganisiwe iba nzima ukuyicindezela ngobuchwepheshe bendabuko bokumboza ubuso, ikakhulukazi ezindaweni ezinzima zokungqubuzana kokugqwala.

Umthelela Wokungcola Ekusebenzeni Kwedivayisi ye-GaN kanye ne-SiC

Ukungcola kuthinta kakhulu ukusebenza kanye nokukhiqiza kwamadivayisi e-GaN kanye ne-SiC. Ngisho nokungcola okuncane kungadala amaphutha, okuholela ekungasebenzi kahle kwedivayisi noma ekunciphiseni ukusebenza kahle. Kumadivayisi e-GaN, ukungcola okuthile kuvame ukubangela izinkinga:

• Izicupho zama-electron ezijulile (E2 kanye ne-E4): Lezi zicupho ziyanda ngemva kokushiswa kwemisebe ye-proton kanye ne-electron. Zibangela izehlakalo zesango kanye ne-drain-lag, okubangela ukuwohloka kwamanje kanye nokuwohloka kwama-AlGaN/GaN HEMTs.
• Ukuhlukaniswa: Ukuhlukana kwezikulufo okuvulekile kukhuthaza ukuvuza kwesango kuma-AlGaN/GaN HEMTs. Ukuhlukana okuhlotshiswe yi-Indium (In) kuthinta ama-InAlN/GaN HEMTs. Kuphinde kuxhumeke nezicupho zama-electron ezijulile, ukubamba, ukuvuza kwamanje okungaphansi komkhawulo, kanye nokuwohloka okuphelele.
• Izikhala zeGallium ezihlanganiswe neSilicon (Si) noma i-Oxygen (O): Lezi zinkimbinkimbi zisebenza njengezicupho ezinkulu zemigodi ku-n-GaN kanye ne-n-AlGaN.
• Ikhabhoni (C)I-Carbon isebenza futhi njengesicupho esikhulu semigodi ku-n-GaN kanye ne-n-AlGaN.
• I-hydrogen: Lokhu kungcola kwangemuva, okuvamile ezintweni ezitshalwe yi-MOCVD kanye ne-NH3-rich MBE, kuthinta ukushintshashintsha kwe-threshold voltage kanye nokuwohloka kwe-transconductance ngaphansi kwe-proton irradiation.
• Abamukeli abajulile: Ukwethulwa kwama-deep acceptors kungqimba lomgoqo kuchaza izinguquko ku-threshold voltage kanye nokuhamba kwesiteshi kuma-transistors e-AlGaN/GaN.
• Izingibe ezijulile kungqimba ye-GaN buffer: Lezi zingibe zingaholela emiphumeleni efanayo neyamukelayo ngokujulile. Zinegalelo ekunciphiseni ingxenye ye-2DEG kanye nokuhlakazeka kwama-electron e-2DEG.

Indlela i-TaC Coating Ebhekana Ngayo Nezinselele Ezibucayi Zokukhiqiza

Ukungasebenzi Kakhulu Kwamakhemikhali Kwe-TaC Coating

Ukufakwa kwe-TaC kunikeza ukungangeni kahle kwamakhemikhali. Lesi sici sikwenza kube yigugu kakhulu ekukhiqizweni kwe-semiconductor. Kumelana ngempumelelo nokuguguleka kwamagesi agqwalisayo njenge-chloride ne-fluoride. Ukufakwa kwe-layer kugcina ukusabela okuphansi ezindaweni ezishisa kakhulu. Lokhu kuvimbela ukusabela kwamakhemikhali okungafuneki ngamagesi asabelayo. Lesi sici sibalulekile ekuqinisekiseni ubumsulwa benqubo kanye nokufakwa kwezinto ezisezingeni eliphezulu. Kuzuzisa kakhulu izinhlelo zokusebenza ezibandakanya i-Silicon Carbide Wafer Boats nezinye izingxenye ezibalulekile.

"Uma kuqhathaniswa nokugqoka kwe-SiC, i-TaC inokumelana okuphezulu kwamakhemikhali kanye nokumelana nokugqwala."

Izembozo ze-TaC zimelana ne-ammonia eshisayo. Ziphinde zimelane nomhwamuko we-hydrogen, umhwamuko we-silicon, kanye nezinsimbi ezincibilikisiwe. Lezi zembozo zihlinzeka ngesivikelo ku-H2, NH3, SiH4, kanye no-Si ezindaweni zamakhemikhali ezinzima.

Ukuzinza Okuphezulu Kokushisa kanye Nokuqina Kwemishini Kokumbozwa Kwe-TaC

Ukuqina okuphezulu kokushisa kanye nokuqina komshini kubalulekile ezingxenyeni ekukhiqizweni kwe-GaN kanye ne-SiC. I-graphite eboshwe nge-TaC ikhombisa ukumelana nokugqwala kwamakhemikhali okuphezulu uma kuqhathaniswa ne-graphite engenalutho noma i-graphite eboshwe nge-SiC. Ihlala izinzile emazingeni okushisa aphezulu, ifinyelela ku-2600°C. Ayisebenzi ngezakhi eziningi zensimbi. Lokhu kwenza kube yingubo ekhethwayo yokukhula kwekristalu elilodwa lesizukulwane sesithathu se-semiconductor kanye nokusika kwe-wafer. Iwusizo kakhulu emishinini ye-MOCVD ekukhuleni kwekristalu elilodwa le-GaN noma le-AlN kanye nemishini ye-PVT ekukhuleni kwekristalu elilodwa le-SiC. Lokhu kuthuthukisa kakhulu ikhwalithi yekristalu.

Izembozo ze-Tantalum Carbide (TaC) zingasetshenziswa ngokuzinzile emazingeni okushisa aphezulu afinyelela ku-2600°C. Azisabeli ngezinto eziningi zensimbi. Le ngubo ibhekwa njengengcono kakhulu ekukhuleni kwekristalu elilodwa lesizukulwane sesithathu kanye nokuqoshwa kwe-wafer. Ngokukhethekile, izuzisa ukukhula kwemishini ye-MOCVD yamakristalu elilodwa le-GaN noma le-AlN kanye nokukhula kwemishini ye-PVT yamakristalu elilodwa le-SiC.

Ubulukhuni bomshini bale nto buphinde bube nomthelela ekuqineni kwayo. Inobulukhuni be-Vickers obungaba ngu-1,880 HV.

Ukuhlanzeka Okuphezulu Kakhulu kanye Nokukhiqizwa Kwezinhlayiyana Eziphansi Nge-TaC Coating

Ukugcina ubumsulwa obuphezulu kakhulu nokunciphisa ukukhiqizwa kwezinhlayiya kubaluleke kakhulu ekukhiqizweni kwe-semiconductor. Izithwali ezimbozwe nge-CVD TaC ziyaziwa ngamazinga azo aphansi kakhulu okukhiqizwa kwezinhlayiya. Izici zazo ezibushelelezi ebusweni zinciphisa kakhulu amathuba okungcoliswa kwezinhlayiya. Lokhu, nakho, kusiza ukuthuthukisa ubumsulwa kanye nokukhiqiza ngesikhathi sezinqubo zokukhula kwe-epitaxial.

Ukuphindaphinda Kwenqubo Okuthuthukisiwe NokukhiqizaUkugqoka kwe-TaC

Ukufakwa kwe-TaC kuthuthukisa kakhulu ukuphindaphindeka kwenqubo ekukhiqizweni kwamadivayisi e-GaN kanye ne-SiC. Ukuqina okumangalisayo kokufakwa kanye nokumelana nezimo zokucubungula ezinzima kuqinisekisa ukuthi izingxenye ze-reactor zigcina ubuqotho bazo kanye nezici zobuso esikhathini eside sokusebenza. Lokhu kuhambisana kubalulekile ekufinyeleleni ukufakwa kwefilimu okufanayo, amaphrofayili anembile okusebenzisa i-doping, kanye nezimo zokushisa ezizinzile kuzo zonke izinhlobo zokukhiqiza. Lapho izindawo zemishini zihlala zizinzile futhi zingenakonakala, abakhiqizi bangaphinda bakhiqize ngokuthembekile amapharamitha enqubo afunwayo. Lokhu kubikezela kunciphisa ukuhlukahluka kwezici zedivayisi kusuka ku-wafer kuya ku-wafer kanye ne-batch kuya ku-batch.

Lokhu kuphindaphinda okuthuthukisiwe kuholela ngqo ekuvuneni okuphezulu kokukhiqiza. Indawo yenqubo ezinzile inciphisa ukwanda kwamaphutha abangelwa ukuwohloka kwezinto, ukungcola, noma izimo zokucubungula ezingaguquki. Isibonelo, ukungangeni kwamakhemikhali kwengubo ye-TaC kuvimbela ukusabela okungafuneki phakathi kwamagesi enqubo nezindonga ze-reactor, okungase kungenise ukungcola noma kushintshe ukuguquguquka kokugeleza kwegesi. Ukuqina kwayo okuphezulu kokushisa kuqinisekisa ukuthi izingxenye azigobeki noma ziwohloke ngaphansi kwamazinga okushisa aphezulu, kugcina amajiyometri aqondile abalulekile ekukhuleni okufanayo. Ngaphezu kwalokho, ubumsulwa obuphezulu kakhulu kanye nokukhiqizwa kwezinhlayiya eziphansi okuhlobene nengubo ye-TaC kunciphisa kakhulu ukungcola kwezinhlayiya, imbangela enkulu yokwehluleka kwedivayisi. Ngokunciphisa le mithombo evamile yokuguquguquka namaphutha, abakhiqizi bakhiqiza inani elikhulu lamadivayisi asebenzayo e-GaN kanye ne-SiC nge-wafer ngayinye, okwenza ngcono ukusebenza kahle kokukhiqiza kanye nokunciphisa imfucuza.

Izicelo Eziyinhloko Zokumboza i-TaC Ekukhiqizweni kwe-GaN kanye ne-SiC

Ukugqoka kwe-TaC kwezingxenye ze-Reactor

Ukufakwa kwe-TaC kudlala indima ebalulekile ekuvikeleni izingxenye ezahlukene ze-reactor ngaphakathi kokukhiqizwa kwe-GaN kanye ne-SiC. Izingxenye ezithile ezizuza kulokhu kufakwa kwe-wafer okuthuthukisiwe zifaka phakathi abathwali be-wafer, ama-injector, ama-susceptors, nama-heater. Kuma-reactor e-SiC CVD, izingxenye ezibalulekile ezifakwe i-Tantalum Carbide zibonisa ukuthuthuka okukhulu kokusebenza. Lokhu kufakwa kwe-Tantalum Carbide kuvelele ngokuqina kwayo okukhulu kanye nokuqhuba kwayo insimbi. Kunikeza ukumelana okumangalisayo nokugqwala kwe-halogen kanye ne-hydrogen, okwenza kube kuhle kakhulu ezindaweni ezishisayo ze-plasma kanye nezimo zokushisa eziphakeme.

Lesi simbozo siphinde sinikeze amandla aphezulu okushisa, siqeda ukushisa ngempumelelo futhi sivimbele ukushisa okwedlulele endaweni ethile ngesikhathi sezinqubo zokushisa okuphezulu. Sivikela izingxenye ezibalulekile zesithando somlilo kanye ne-reactor emazingeni okushisa afinyelela ku-2200°C, sigcina ukuzinza kwamakhemikhali kanye nokwemishini. I-Tantalum carbide inokumelana okuqinile kokugqwala kuma-acid amaningi nama-alkali, ivimbela ukulimala kwe-substrate ezindaweni ezigqwalisayo. Simelana ne-hydrogen, i-ammonia, i-monosilane, kanye ne-silicon, sihlinzeka ngokuvikelwa ezindaweni zamakhemikhali ezinzima. Lokhu kuvikelwa okuthuthukisiwe kuholela ekuphileni kwesikhathi eside kwezingxenye. Isimbozo se-TaC siphinde sibe nobumsulwa obuphezulu kakhulu, amazinga okungcola avame ukuba ngaphansi kuka-5 ppm. Lokhu kunciphisa kakhulu amaphutha afana nama-micropores kanye nemigodi ye-etch kumakristalu e-SiC, kuthuthukisa ikhwalithi yekristalu.

Ukugqoka kwe-TaC Kwamakamelo Okusika kanye Nemishini Yokucubungula I-Plasma

Ukufakwa kwe-TaC kubaluleke ngokulinganayo emakamelweni okugcoba kanye nemishini yokucubungula i-plasma. Ubulukhuni bayo obumangalisayo kanye nokungangeni kwamakhemikhali kuvimbela ukuguguleka nokugqwala okuvela ezindaweni ze-plasma ezihuquzelayo kanye nokusabela kwamakhemikhali okunzima. Lokhu kuqinisekisa ukuthi izingxenye zihlala zisebenza ngaphansi kwezimo ezimbi kakhulu. Ukuhlanzeka okuphezulu kakhulu kokufakwa, ngamazinga okungcola angaphansi kuka-5 ppm, kunciphisa izingozi zokungcola ezinqubweni zokukhula kwekristalu.

Ukunamathela okuqinile kanye nokwanda okuphansi kokushisa kuvimbela ukuqhekeka noma ukuhlukana ngesikhathi sokujikeleza kokushisa. Lokhu kubalulekile ekugcineni ukunemba kanye nokuvumelana kokwenziwa kwe-semiconductor. Ekukhuleni kwe-epitaxial ye-GaN/SiC, ukugqoka kuvimbela ukusabela kwegesi futhi kunciphisa amaphutha, kuthuthukise isivuno sonke. Izinto ezihlanzekile kakhulu kanye nokugqoka okuhlala isikhathi eside kwe-TaC kunciphisa ukukhiqizwa kwezinhlayiya kanye nokuphuma kwegesi. Lokhu kunciphisa ingozi yokungcola kwe-wafer kanye namaphutha. Ukugqoka okuqinile kunikeza ukumelana okuhle kakhulu nokuguguleka kwe-plasma kanye nokuhlaselwa ngamakhemikhali, kwandise impilo yokusebenza kwezingxenye.

Ukugqoka kwe-TaC akugcini nje ngokuzuzisa; kubalulekile ekuvumeleni ukukhiqizwa okuthembekile, okusebenzayo kakhulu, futhi okungabizi kakhulu kwamadivayisi e-GaN kanye ne-SiC. Kunciphisa izinselele zokungcola kanye nokuwohloka okukhona ezinqubweni zawo zokukhiqiza. Indima yayo izokhula kuphela njengoba lobu buchwepheshe obuthuthukisiwe buqhubeka nokuthuthuka. Lokhu kuqinisekisa ukusungula izinto ezintsha okuqhubekayo kanye nokwanda kwemakethe.

Imibuzo Evame Ukubuzwa

Kuyini ukumbozwa kwe-TaC?

Isembozo se-TaC siwungqimba oluvikelayo lwe-Tantalum Carbide olusetshenziswa ezingxenyeni ze-graphite. Abakhiqizi basebenzisa inqubo ye-Chemical Vapor Deposition (CVD). Le nhlanganisela ye-ceramic eqinile, ephikisayo ithuthukisa ukuzinza kanye nokumelana namakhemikhali kwezicelo ze-semiconductor.

Ukugqoka kwe-TaC kuthuthukisa kanjani isivuno sokukhiqiza?

Ukumbozwa kwe-TaC kuqinisekisa izimo zenqubo ezihambisanayo. Kuvimbela ukuwohloka kwezinto kanye nokungcola. Lokhu kuzinza kunciphisa amaphutha kanye nokwehluka kwezici zedivayisi. Abakhiqizi bathola inani eliphakeme lamadivayisi asebenzayo e-GaN kanye ne-SiC nge-wafer ngayinye.

Kungani ukumbozwa kwe-TaC kukhethwa kakhulu kune-SiC kwezinye izinhlelo zokusebenza?

I-TaC coating inikeza ukungangeni kahle kwamakhemikhali kanye nokumelana nokugqwala okuphezulu uma kuqhathaniswa ne-SiC coating. Imelana nezimo zamakhemikhali ezinzima kanye namazinga okushisa aphezulu. Lokhu kuyenza ifaneleke kakhulu ezinqubweni ezithile ezidinga amandla ekukhiqizweni kwe-GaN kanye ne-SiC.

Yiziphi izingxenye ezithile ezizuza ekumbozweni kwe-TaC ekukhiqizweni kwe-GaN/SiC?

Izingxenye ze-reactor ezifana nezithwali ze-wafer, ama-injector, ama-susceptor, kanye nama-heater ziyazuza kakhulu. Amakamelo okucwilisa kanye nemishini yokucubungula i-plasma nazo zisebenzisa i-TaC coating. Ivikela lezi zingxenye kumagesi aqothulayo, amazinga okushisa aphezulu, kanye ne-plasma eqothulayo.

Thatha Isinyathelo Esilandelayo

Ukulungele ukuletha ukuzinza okungakaze kubonwe ngaphambili kanye nokuzinikela ezinqubweni zakho ze-GaN kanye ne-SiC?

Xhumana nochwepheshe bethu besayensi yezinto ezibonakalayo namuhlaukuxoxa ngendlela ikhambi lokumboza le-TaC elingaguqula ngayo ukusebenza kwe-MOCVD noma i-CVD reactor yakho.